EP1259978A2

EP1259978A2 - Method and device for producing group iii-n, group iii-v-n and metal-nitrogen component structures on si substrates

Info

Publication number: EP1259978A2
Application number: EP01921151A
Authority: EP
Inventors: Armin Dadgar; Alois Krost; Michael Heuken; Assadulah Alam; Oliver SCHÖN
Original assignee: Aixtron SE
Current assignee: Aixtron SE
Priority date: 2000-03-02
Filing date: 2001-03-02
Publication date: 2002-11-27
Also published as: WO2001065592A2; KR20020086595A; JP2003526203A; US20030070610A1; WO2001065592A3

Abstract

The invention relates to a method and a device for producing Group-III-N, Group-III-V-N and metal-nitrogen component structures on Si substrates by means of organometallic gas phase epitaxy. The inventive method and the corresponding device are characterised in that a low-temperature germination layer and/or a low-temperature buffer layer is/are produced from a Group III-V semiconductor and/or a metal-Group V connecting semiconductor and a component layer or sequence of layers is produced from Group-III-N, Group-III-V-N or metal-Group-V semiconductors in a horizontal growth chamber, in that a minimal lateral temperature difference of less than 5 K, preferably less than 1K, an adjustable roof temperature and/or wall temperature and a temperature on a substrate holder that is caused to rotate by a gas cushion are maintained, the reaction gases being introduced in such a way as to prevent any unwanted interaction between the starting gases and in such a way that the procedure can be observed without disturbing the growth process.

Description

Process and apparatus for the preparation of group III-N, group III-V-N and

Metal-nitrogen component structures on Si substrates

DESCRIPTION

Technical field

The invention relates to a method for producing group III-N, group III-V-N and metal-nitrogen component structures on Si substrates and to a corresponding device.

State of the art

Because of the currently small size and quality of the available GaN substrates according to the prior art, homoepitaxy on GaN substrates is not possible on a commercial scale. Therefore, the commercial production of group III nitπd layers, such as e.g. for blue and green light-emitting diodes are currently mainly carried out on sapphire and SiC substrates. However, the substrate costs are so high that they are responsible for a significant part of the component costs [Duboz, reference as well as in the following citations see. Bibliography- ms]. Reference is expressly made to these as well as to all of the literature references mentioned below to explain all of the details not described in more detail here.

The fabrication of Group III-N device layers on cheaper substrates can therefore reduce the cost of Reduce components significantly. In addition, if insulating sapphire is used as the substrate, for example in the case of light-emitting diodes, complex structuring is necessary for contacting the components on the rear side, as described, for example, by Mayer et al. [Mayer] has been described.

Large-scale growth on sapphire and SiC is currently not possible due to the lack of available substrates; This has a negative effect on the yield per area, since due to the unusable wafer edge of a few millimeters, the yield with small substrate diameters is always lower than with large diameters.

Due to the availability of substrates up to currently 30 cm in diameter, the growth on Si offers the possibility of increasing the yield with inexpensive substrates and also making structuring easier for many components than on sapphire. This also enables simple integration with the existing Si technology.

For this reason, there are currently generally strong efforts to deposit Group III-N layers on Si substrates. The growth on Si (111) areas is favored [Auner, Guha, Kobayashi, Nikishin, Sänchez-Garcia, Schenk, Tran]. Alternatively, e.g. growth with optimized parameters on Si (100) surfaces [Wang] and in particular on Si (100) structured with (111) V-trenches is also possible, as described in DE 197 25 900 A1.

A general problem of the epitaxy of nitridic semiconductors on Si is the nitriding of the substrate [Ito, Nikishin, Tran]. There are different approaches to growing on Si in the MOCVD to avoid nitriding the substrate; As a rule, a protective low-temperature layer is provided on the Si substrate. So far, however, the investigations by the authors named above have generally not gone beyond feasibility studies. Recently, Guha et al. and Tran et al. [Guha, Tran] demonstrated the feasibility of an LED structure on Si.

For a high yield of components, apart from the use of substrates that are as large as possible, a high level of homogeneity of the layers is also necessary. For example, a layer thickness variation in the monolayer range with an active In _x Ga N_ _x N quantum well layer, such as is used in LEDs, can lead to a shift of the maximum emission wavelength by several nanometers. With lasers, such a variation in wavelength is completely unacceptable. In addition, with such a component there is the problem of controlling the indium concentration, which is strongly dependent on the deposition temperature and the temperature of the surrounding walls. However, the low-temperature seed or buffer layers on the Si substrate must also have the best possible homogeneity so that the layer above has a constant quality over the wafer.

Presentation of the invention

The invention is based on the object of specifying a method and a device for the cost-effective production of group III-N or group III-VN component structures on Si substrates. A solution to this problem according to the invention is specified in the independent claims directed to a method or a device.

According to the invention, a horizontal MOCVD reactor is used in a manner known per se which, owing to the structure of the growth chamber and the rotating susceptors, ensures great homogeneity and reproducibility of the deposited layers. Possible embodiments of such MOCVD reactors are described below. The advantage of the susceptors rotating on a gas cushion is the improved homogeneity of the layers with virtually no abrasion. In other, mechanically driven systems, particles are created by the abrasion

Layer growth or the purity of the layers can negatively affect. By using the MOCVD systems used according to the invention and Si substrates, inexpensive production of Group III-N components is possible with a high component yield and low use of source materials. The efficiency of Group III elements e.g. B. Ga is over 10% in a multi-disk reactor. Especially when growing ternary or quaternary layers such as InGaN, the precise control of the substrate temperature as well as the temperature of the surrounding walls or the ceiling of the growth chamber is very important for high reproducibility and homogeneity, since the installation depends very sensitively on these parameters.

According to the invention, therefore, a special gas inlet geometry is used, which is distinguished by the fact that undesired cross-reactions between the gases do not take place. The special temperature profile in the The reactor and the temperature management and control system are designed in such a way that any interactions of the gases are suppressed, so that reproducibility is guaranteed and the efficiency of the raw materials is increased.

The use of a low-temperature seed and / or a buffer layer enables the substrate in the MOCVD system described to be uniformly grown or grown over. The device is therefore designed in such a way that precise control of the static and dynamic temperature distribution on the Si substrates is possible. The temperature interval is 300-1600 ° C. This system is necessary for both the seed and active layers. The germ layer is understood to mean a three-dimensional layer or three-dimensional islands which are not necessarily closed and which are a few nanometers thick and which, in spite of possibly poor crystalline and / or stoichiometric properties, form the basis for the subsequent one

Layer growth serves or from which the further layer growth starts. In the case of epitaxy on Si, it is often necessary so that a preferred orientation from non-polar Si to, for example, polar GaN is given and the buffer or component layer can be deposited on it in the first place. With a skilful choice of the deposition parameters, however, growth on Si is also possible, for example directly with a low-temperature buffer layer as the first layer. Such seed and / or buffer layers on Si are - according to the invention of great importance - for the successful growth of Group III-N and Group III-VN layers on Si. Because only a closed germ and / or buffer layer, for example made of a Group III-V material such as z. B. Material in the system Al _x Ga _y In _z N _a As _b P _c (x + y + z = l, a + b + c = l) can avoid nitriding of the substrate at higher temperatures. Depending on the material, "low temperature" always means a temperature below the usual growth temperature of nitridic semiconductors such as GaN and A1N, which is above 1000 ° C. in the MOCVD. To grow a germ or The buffer layer is also advantageous in the developments according to the invention, in which the prior deposition of a metal such as, for example, Al serves the purpose of

To protect the surface from the interfering nitriding before switching on, for example, NH ₃ [Ito, Nikishin].

The method according to the invention is made possible on large-area substrates or m multi-wafer systems by the homogeneity of the layers deposited in these systems, because a uniformly thick seed and / or buffer layer is e.g. necessary to avoid silicon nitriding in partial areas of the substrate due to a locally too thin seed and / or buffer layer. Furthermore, the homogeneity of the inferior germ and / or buffer layer from the crystalline point of view is important in order to ensure a uniform quality of the applied layers over a large area. If the thickness is inhomogeneous, the seed and / or buffer layer does not crystallize uniformly at higher temperatures and then leads to fluctuations in the crystalline quality and thus e.g. in the case of LED structures, fluctuations in the light output over large areas of the wafer.

The m-situ measurement of the reflectivity which is advantageously used serves to monitor the layer growth. Examples of such m-situ reflective Activity measurements are described in connection with the drawings. This allows the thickness and composition of the layer to be monitored during growth and, for example, to adjust the parameters in the event of a slight drift, so that the layers produced can be used or, for example, a decision can be made before the end of growth whether the layers continue to grow or later should be processed further. In particular, the reflectivity measurement is very helpful in the growth of the low-temperature seed layer and / or the low-temperature buffer and the Group III-N layer deposited on the seed or buffer layer at higher temperatures. Here the layer thickness and the smoothness or closeness of the deposited layers can be assessed very well. For example, Si tends to nitridate under NH ₃ or other nitrogen starting materials which are used, for example, in group III-N layer growth for the nitrogen component at higher temperatures. However, growth of, for example, crystalline Group III-N layers is not possible on such nitrided Si. In most cases there is then no growth or of polycrystalline material which has a modified or low reflectivity, which can be observed in the measurement. If, for example, due to poor pretreatment of the substrate or poor substrate quality, the Group III-N layer deposited thereon is not completely closed, the underlying Si partially extends below the already deposited layer and thus leads to a unusable

Component structure. This can be recognized early, among other things, by the measurement of the reflectivity claimed in a further development according to the invention, so that the layer growth ends in good time and can be saved with costs. Drawings are shown by way of example in connection with the exemplary embodiments. Only an adapted process control and a suitable reactor geometry leads to a technically usable layer deposition. A corresponding representation is contained in the description of the figures, which fulfills these requirements.

Possibilities are specified in the subclaims as to how the variation in the layer and growth parameters can reduce the dislocation density and the formation of cracks in the applied component layer. These options can be used individually, or in combination, but also multiple and multiple combined. Since Si and, for example, GaN have different lattice constants and crystal lattices, dislocations are formed at the interface, among other things. The thermal lattice mismatch of these materials also leads to the formation of cracks from a layer thickness of approx. 1 μm, for example when cooling the layer [Monemar] or during growth when setting different temperatures for e.g. B. InGaN growth and AlGaN or GaN. When such layers grow, for example for InGaN / GaN multiquantum well structures, the temperature in MOCVD growth is often varied by several hundred degrees Celsius. Nikishin et al. have shown that growth in the MBE can avoid the formation of cracks by growing a germ or buffer layer of, for example, A1N made alternately from metal and then nitriding [Nikishin]. This layer does not necessarily have to have a stoichiometric ratio of Group III to Group V components. The materials mentioned in a subclaim also include so-called layer grids such as WSe ₂ , which are soft in one direction, ie have sliding planes. This makes it possible to deposit layers with little dislocation and cracks. The conversion of a seed and / or buffer layer on Si substrates during or after the deposition, for example of AlAs, by oxidation to A1 ₂ 0 ₃ as described by Kobayashi et al. Carried out can serve as the basis for the subsequent layer growth [Kobayashi].

To reduce dislocations, Li et al. showed that by partially masking a group III nitride layer using methods such as ELO, ELOG or LEO, the layer deposited on it is at least less dislocated above the masked areas [Li]. Multiple combinations of this process can lead to layers with little dislocation. Furthermore, by applying such masks with a suitable expansion coefficient, the formation of cracks in the deposited Group III nitride layer can be reduced. The reduction m of the dislocation density can also be achieved with the method described by Iwaya et al. described growth of low-temperature intermediate layers take place [Iwaya]. The author describes how the dislocation density can be greatly reduced by layers that do not require any further processing, i.e. can be deposited in one step with the component. By a clever choice of the material m such intermediate layers such. B. the relatively hard AlN and / or z. B. the relatively soft InN and the right choice of the deposition parameters of such layers, the thermally induced stress and thus the cracking can be reduced or reduced. Since the Si band gap is only about 1.1 eV, the photon energies generated with, for example, GaN-based components are usually significantly higher, in contrast to the use of sapphire substrates, a considerable part of the emitted photons is absorbed in Si. In order to avoid or reduce this, the methods described in further subclaims can be used. In a method according to an advantageous further development, for example, a metal of sufficient thickness is deposited on the substrate by means of evaporation, sputtering or

Gaseous phase deposition applied, thereby increasing reflectivity. Here, careful selection of the metal, for example, is a prerequisite in order to be able to subsequently deposit high-quality crystalline layers. A partial high-quality overgrowth, such as, for example, is preferably achieved by applying a partial masking, for example of SiO ₂ and / or SiN _x or metal strips from, for example, W on an AlN or GaN seed or buffer layer and the subsequent overgrowth in Kawaguchi et al. described enables [Kawaguchi]. The method according to the invention advantageously serves to reduce dislocations. This masking can also be carried out several times and also in a staggered arrangement, so that the efficiency of this layer as a reflector but also as a material-improving method is increased.

In another preferred development 10 according to the invention, two goals can be pursued to increase the light intensity. Firstly, the unblocking of the upper interface for the corresponding one

Light wavelength by applying one or more layers with different refractive indices to each other and / or to the epitaxial layer and / or the surrounding medium, which is usually air or at a LED is often a plastic. On the other hand, the combination of two Bragg mirrors to create a vertical light beam. Here, for example, the combination with the further development specified in a subclaim is also very suitable for the lower mirror.

In the case of transparent, ie mostly non-metallic, layers to increase reflection, it is important to adhere exactly to the layer thickness - above all with vertically emitting lasers. This homogeneity can usually be guaranteed over a large area in sputtering techniques. However, if gas phase deposition is involved, this is only possible over a large area with the system according to the invention. An exemplary embodiment for a light-emitting GaN structure on Si substrate with a suitable buffer layer is also shown in the description of exemplary embodiments.

According to a development of the method according to the invention, simpler contact technology and lower resistances in the region of p-doped layers are made possible if layer structures are deposited on this p-type Si substrate.

According to a further method, intermediate layers can be provided between the silicon substrate and active components for optimal adaptation to the respective task or use of the component structure to be produced. Brief description of the drawing

The invention is described below by way of example without limitation of the general inventive concept on the basis of exemplary embodiments with reference to the drawing, to which reference is expressly made with regard to the disclosure of all details according to the invention not explained in detail in the text. Show it:

1 cross section through a MOCVD reactor for the coating of GaN compounds on 2 inch silicon wafers,

Fig. 2 cross section through a multi-disc MOCVD

Reactor for the coating of several silicon wafers with GaN compounds,

Fig. 3 detail of the window for observing the growth

4a, b, c exemplary reflectivity measurement of GaN on a Si wafer, and

5: a GaN LED on silicon produced according to the invention and the measured spectrum of the

Light emission.

Representation of exemplary embodiments

1 shows a cross section through a MOCVD reactor used in the context of the invention for the coating of GaN compounds on (for example) 2 inch silicon wafers. 1 designates a gas inlet with which gases for the production of a layer or buffer layer or the reflective layer m the reaction chamber are let in. 2 denotes the area in which a substrate 4 on a rotating susceptor on a gas cushion and the gas inlet arrangement are arranged to avoid nitriding of the Si substrate. For the temperature control of the substrate 4, a coil 3 is provided, which provides sufficient temperature homogeneity at 300 ° C, 530 ° C, 700 ° C, 1000 ° C, 1100 ° C and at 1600 ° C.

5 designates an implementation for checking the substrate temperature. Reference numeral 6 denotes thermostatting of the ceiling and the walls. Reference numeral 7 designates optical windows for an m-situ measurement.

FIG. 2 shows a cross section through a further exemplary embodiment of a multi-disk MOCVD reactor for the coating of several silicon wafers with GaN compounds.

Reference numeral 1 designates a special gas inlet for a layer or buffer layer or the reflective layer.

Reference numeral 2 denotes a substrate and a gas outlet arrangement in order to avoid nitriding of the Si substrate. Reference numeral 3 denotes a coil with sufficient temperature homogeneity at the same time at 300 ° C, 530 ° C, 700 ° C, 1000 ° C and 1100 ° C, 1600 ° C. Numeral 4 denotes a rotating susceptor on a gas cushion. Reference numeral 5 denotes an implementation for checking the substrate temperature. Reference numeral 6 denotes thermostatting of the ceiling and the walls. Reference numeral 7 designates optical windows for an m-situ measurement.

Figure 3 shows an embodiment of a detail of the growth observation window.

4a, b, c show exemplary reflectivity measurements of GaN on a Si wafer. The following layer structure and parameters apply to FIG. 4a:

GaN: S = 15 mm; 200 mbar; 1170 ° C; V / III = 813 Nukl.:AlN = 30 mm; 200 mbar; 560 ° C; V / III = 1280

The following layer structure and parameters apply to FIG. 4b:

GaN = 30 µm; 50 mbar; 1170 ° C; V / III = 813 Nukl .: GaN = 15 mm; 500 mbar; 560 ° C; V / III = 8191

The following layer structure and parameters apply to FIG. 4c:

GaN = 15 µm; 50 mbar; 1170 ° C; V / III = 813 Nucl .: AlGaN = 15 mm; 500 mbar; 560 ° C; V / III = 096

The reference numerals m FIGS. 3 and 4 correspond to those m of the previous FIGS. 1 and 2.

5 shows an example of a photo of a GaN LED on silicon and a measured spectrum of the light emission. List of abbreviations for the registration

AI aluminum

As arsenic BN boron nitride

C carbon

ELO, ELOG Epitaxial Lateral O- growth, epitaxial lateral overgrowth Ga Gallium

Group III elements from the third main group of the Periodic Table of the Elements Group V elements from the fifth main group of the Periodic Table of the Elements except nitrogen

Group III-V compound semiconductors from elements of the third and fifth main group of the periodic table of the elements except nitrogen

Group III-N compound semiconductors from elements of the third main group of the periodic table of elements with nitrogen Group III-VN compound semiconductors from elements of the third main group of the periodic table of elements with nitrogen and another element of the fifth main group of the periodic table of elements In Indium LED Light Emitting Device

diode

LEO Lateral Epitaxial Overgrowth MOCVD metal organic chemical vapor phase insertion, metal organic gas phase separation interchangeable with this application text

MOVPE metal organic vapor phase epitaxy, metal organic vapor phase epitaxy and

HVPE hydride vapor phase epitaxy, hydride gas phase epitaxy

N nitrogen

NH ₃ ammonia P phosphor sapphire A1 ₂ 0 ₃ , aluminum oxide includes corundum

Si silicon; In addition to ordinary Si substrates, substrates such as e.g. Silicon-on-insulator substrates included

SiC silicon carbite

Si _x N _y silicon nitride (x, y any)

SiO, silicon dioxide

Reference list of quotes

[Auner] G.W. Auner, F.Jin, V.M. Naik and R. Naik, Microstructure of low temperature grown AlN thin films on Si (III), J. Appl. Phys. 85

7879 (1999)

[Duboz] JY Duboz, gallium Ni tride as seen by the industry, 3 ^rd International Conference on Nitride Semiconductors (ICNS3) Mo_01, Mont Pellier, France, 5-9 July 1999

[Guha] S. Guha and N.A. Bojarczuk, Mul ticolored light emitters on Sili con Subs tra tes, Appl. Phys. Lett. 73, 1487 (1998)

[Ito] Takahiro Ito, Kohj i Ohtsuka, Kazuhiro Kuwahara, Masatomo Sumiya, Yasushi Takano and Shunro Fuke, Effect of AlN buffer layer deposi ti - on condi ti ons on the property of es GaN layer,

J. Cryst. Growth 205, 20 (1999)

[Iwaya] Motoaki Iwaya, Tetsuya Takeuchi, Shigeo Yamaguchi, Christian Wetzel, Hiroshi Amano and I-samu Agasaki, Reduction of etch pi t densi ty in organometalli c vapor phase epi taxy-grown GaN on sapphire by inserzi on of a low - tempera ture-deposi ted buffer layer between high - tempera ture -grown GaN, Jpn. J. Appl.

Phys. 37, L316 (1998) [Kawaguchi] Yashutoshi Kawaguchi, Shingo Nambu, Hiroki Sone, Masahito yamaguchi, Hideto Miyake, Kazumasa Hiramatsu, Nobuhiko Sawaki, Yasushi Iyechika and Takayoshi Maeda, Selective area overgrowth (SAG) and epi taxial la (ELO) of GaN using tungsten ask, MRS Internet J. Nitride Semicond. Res. 4SI, G4.1. (1999) [Kobayashi] NP Kobayashi, JT Kobayashi, PD

Dapkus, W.-J. Choi, A.E. Bond, X. Zhang and

H. D. Rieh, GaN grown on Si (111) substrates u - sing oxidized AlAs as an intermediate layer, Appl. Phys. Lett. 71, 3569 (1997)

[Li] X. Li, SG Bishop and JJ Coleman, GaN: From Sel ective Area Epi taxy To Epi taxial La teral Overgrowth, MRS Internet J. Nitride Semicond. Res. 4SI, G4.8 (1999) [Mayer] M. Mayer, A. Pelzmann, C. Kirchner, M. Schauler, F. Eberhard, M. Kamp, P. Unger, KJ Ebeling, Devi ce Performance of ul tra-violet e- with diodes grown by MBE, J. Cryst. Growth 189/190, 782 (1998) [Monemar] B. Monemar, Summary of the ^3rd Interna tional

Conference on Ni tride Semi conductors (ICNS3), Montpellier, France, 5-9 July 1999, MRS Internet J. Nitride Semicond. Res. July 15, 1999 [Nikishin] S.A. Nikishin, N.N. Faleev, V.G. Antipov, S.

Francoeur, L. Grave de Peralta, T.I. Prokofy-eva, M. Holtz and S.N.G. Chu, High quality GaN grown on Si (111) by gas source molecular beam epi taxy wi th ammonia, Appl. Phys. Lett. 75, 2073 (1999)

[Sanchez-Garcia] MA Sanchez-Garcia, E. Calle a, E. Monroy, FJ Sanchez, F.Calle, E. Munoz, A.Sanz. Hervas, C. Villar and M. Aquilar, Study of high quality AlN layers grown on Si (111) Substra tes by plasma -assi s ted molecular beam epi taxy, MRS Internet J. Nitride Semicond. Res. 2, 33 (1997) [Schenk] HPD Schenk, DG Kipshidze, VB Lebedev, S. Shokhovets, R. Goldhahn, J. Krausslich, A. Fissel, where. Richter, Epitaxial growth of AlN and GaN on Si (111) by plasma-assisted olecular beam epitaxy, J. of Cryt. Growth 201/202, 359 (1999) [Tran] Chuong A. Tran, A. Osinski, RF Karlicek Jr. and I. Berishev, Growth of InGaN / GaN multiple -quantum-well blue light-emitting diodes on Silicon by metalorganic vapor phase epitaxy, appl. Phys. Lett. 75, 1494 (1999) [Wang] Lianshan Wang, Xianglin Liu, Yude Zan, Jun Wang, Du Wang, Da-cheng Lu and Zhanguo Wang, Wurtzite GaN epitaxial growth on a Si (001) Substrate using γ-Al ₂ 0 ₃ as an intermediate layer, appl. Phys. Lett. 72, 109 (1998)

Claims

1. Process for the production of group III-N, group III-VN and metal-nitrogen component structures on Si substrates by means of organometallic gas phase epitaxy, characterized in that a low-temperature nucleus and / or low-temperature buffer layer made of a group III-V semiconductor and / or a metal group V compound semiconductor and a component layer or layer sequence of group III-N, group III-VN or metal group V semiconductors in a horizontal growth chamber that minimum lateral temperature difference below 5 K, preferably below 1K, an adjustable ceiling temperature and / or wall temperature and a temperature on a substrate holder offset by a gas cushion in rotation is maintained, the reaction gases being introduced in such a way that there is no undesired interaction between the starting gases and that an observation of the process is carried out without disturbing the growth process.

2. The method according to claim 1, characterized by the control of the layer growth or the layer smoothness and / or the

Layer thickness by measuring the layer reflectivity.

3. The method according to claim 1 or 2, characterized by the application of a metal and / or semiconductor layer on Si or a low-temperature seed layer and / or low-temperature buffer layer also in connection with a subsequent conversion of such a layer to reduce the

Dislocation density and / or to reduce or avoid cracks in the epitaxial layer deposited thereon.

4. The method according to any one of claims 1 to 3, characterized by the partial masking of the substrate and / or a low-temperature seed layer and / or low-temperature buffer layer and / or buffer layer with layers of insulators and / or thermally resistant materials such as. B. Si0 ₂ , Si _x N _y , C, BN and / or sapphire or, for example, metallic layers to reduce dislocations and / or stresses in the grown layers or the substrate.

5. The method of any one of claims 1 to 4, characterized by the application of one or more intermediate layers in the lower low and / or high temperature buffer layer not counting to the active part of the structure, consisting of the same material of the buffer but at a different temperature and / or Group III-V

Ratio and / or reactor pressure deposited.

6. The method according to any one of claims 1 to 4, characterized by the application of intermediate layers in the lower low and / or high temperature buffer layer not counting as an active part of the structure, consisting of layers of another material of group III-V and / or metal group V compound semiconductors.

7. The method according to any one of claims 1 to 6, characterized by the application of submonolages up to several monolayers of a metal on the substrate before switching on the group V starting material.

8. The method according to any one of claims 1 to 7, characterized by the application of one or more reflective layers on the Si substrate to increase the reflectivity when used for photonic components.

9. The method according to any one of claims 1 to 8, characterized by applying one or more times a partial masking on the epitaxial layer from a different refractive index than the surrounding material to increase the reflectivity when used for photonic components.

10. The method according to any one of claims 1 to 9, characterized by the application of layer sequences with different refractive index by means of sputtering and / or epitaxial processes. Ren on the Si substrate before the growth of the component layers and / or during or after the growth on the component layers to improve the light yield in photonic components or as a Bragg mirror for the production of vertically light-emitting components.

11. The method according to any one of claims 1 to 10, characterized by the possibility of 3-dimensional structures z. B. pyramids or cones or truncated pyramids or truncated cones, or other 3-dimensional structures with heights of a few nm to a few m for field emitter structures, made of GaN and (AlGaΙn) N. These structures require great uniformity across large substrate areas in order to ensure uniformly bright illumination when used in displays.

12. The method according to any one of claims 1 to 11, characterized by the possibility of depositing the layer structure on p-type Si substrate, so that simpler contact technology and lower resistances in the region of the p-doped layers are made possible.

13. The method according to any one of claims 1 to 12, characterized by the application of cubic p- or n-type intermediate layers, for example made of GaN, BP, BN or other compound semiconductor layers between the silicon substrate and the active component.

14. Device for producing group III-N, group III-VN and metal-nitrogen component structures on Si substrates by means of organometallic gas phase epitaxy, characterized by a horizontal growth chamber with a minimum possible lateral temperature difference below 5K, preferably 1K , an adjustable ceiling temperature and / or wall temperature and a substrate holder set in rotation by a gas cushion, in which the growth of a low-temperature germ and / or low-temperature buffer layer made of a group III-V semiconductor and / or a metal group-V compound semiconductor as well as the component layer or layer sequence of group III-N, group III-VN or metal group V semiconductors, a gas inlet system being designed in such a way that there is no undesired interaction between the starting gases; In addition, observation devices are provided to observe the process without disrupting the growth process.

15. The apparatus according to claim 14, characterized by the control of the layer growth or the layer smoothness and / or the layer thickness by means of a measuring device for measuring the layer reflectivity.

16. The apparatus according to claim 14 or 15, characterized by an application device for applying a metal and / or semiconductor layer on Si or a low temperature seed layer and / or low temperature buffer layer also in connection with a subsequent conversion of such a layer to reduce the dislocation density and / or

Reduction or avoidance of cracks in the epitaxial layer deposited thereon.

17. Device according to one of claims 14 to 16, characterized by a masking device for partial masking of the substrate and / or a low-temperature germ layer and / or low-temperature buffer layer and / or buffer layer with layers of insulators and / or thermally resistant materials such as. B. Si0 ₂ , Si _x N _y , C, BN and / or sapphire or z. B. metallic layers to reduce dislocations and / or stresses in the grown layers or the substrate.

18. Device according to one of claims 14 to 17, characterized by an introduction device for applying one or more intermediate layers in the lower low-temperature and / or high-temperature buffer layer which does not count towards the active part of the structure and consists of the same material of the buffer, but with one another temperature and / or group III-V ratio and / or reactor pressure is deposited.

19. Device according to one of claims 14 to 17, characterized by an introduction device for Application of intermediate layers in the lower and / or high-temperature buffer layer which does not belong to the active part of the structure and consists of layers of another material of group III-V and / or metal group V compound semiconductors.

20 Device according to one of claims 14 to 19, characterized by an application device for applying submonolayers up to several monolayers of a metal on the substrate before switching on the group V starting material.

21. Device according to one of claims 14 to 20, characterized by an application device for

Application of one or more reflective layers on the Si substrate to increase the reflectivity when used for photonic components.

22. Device according to one of claims 14 to 21, characterized by an application device for applying one or more times a partial masking on the epitaxial layer from a different refractive index than the surrounding material to increase the reflectivity when used for photonic components.

23. The device according to one of claims 14 to 22, characterized by an application device for applying layer sequences with different refractive index by means of atomization and / or epitaxial method on the Si substrate before the growth of the component layers and / or during or after the growth on the component layers to improve the light yield in photonic components or as a Bragg mirror for the production of vertically light-emitting components.

24. Device according to one of claims 14 to 23, characterized by the possibility of 3-dimensional structures z. B. pyramids or cones or truncated pyramids or truncated cones, or other 3-dimensional structures with heights of a few nm to a few microns for field emitter structures, made of GaN and (AlGaΙn) N. These structures require great uniformity across large substrate areas in order to ensure uniformly bright illumination when used in displays.

25. Device according to one of claims 14 to 24, characterized by a deposition device in order to deposit the layer structure on p-type Si substrate, so that simpler contact technology and lower resistances in the region of the p-doped layers are made possible.

26. Device according to one of claims 14 to 25, characterized by an introduction device for applying cubic p- or n-type intermediate layers, for example made of GaN, BP, BN or others Compound semiconductor layers between the silicon substrate and the active component.