EP1247287A1 - Liner for semiconductor etching chamber - Google Patents

Liner for semiconductor etching chamber

Info

Publication number
EP1247287A1
EP1247287A1 EP01904835A EP01904835A EP1247287A1 EP 1247287 A1 EP1247287 A1 EP 1247287A1 EP 01904835 A EP01904835 A EP 01904835A EP 01904835 A EP01904835 A EP 01904835A EP 1247287 A1 EP1247287 A1 EP 1247287A1
Authority
EP
European Patent Office
Prior art keywords
liner
chamber
dome
high performance
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01904835A
Other languages
German (de)
French (fr)
Inventor
Joy Sawyer Bloom
Andrew Thawley Hayman
Michio Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of EP1247287A1 publication Critical patent/EP1247287A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma

Definitions

  • the present invention relates to dome liners and chamber liners for use in processes involving dry etching of semiconductor devices.
  • Dry etching processes using chambers with dome-shaped ceramic or aluminum tops and aluminum sides and bottoms, in part, are used to manufacture semiconductor wafers.
  • the dry etch process uses plasma state gases to perform chemical and physical erosion on unprotected surfaces of a semiconductor wafer surface.
  • the mixture of gases used, as well as other variables such as the electrical power and pressure settings, will alter the aggressiveness and uniformity of erosion of the semiconductor surface and the chamber.
  • the chamber is filled with gas and semiconductor wafers are placed inside the chamber. Gas is then ionized with a plasma field to make the gas reactive so as to etch wafers inside the chambers.
  • a plasma field is usually made of chemically active species of gaseous compounds such as fluorine, oxygen and chlorine.
  • the exact mixture of gaseous compounds is chosen to balance the functions of the individual gases so as to achieve a desired etch activity.
  • Etching can result in the generation of etching by-products that, if not removed, will eventually contact and damage the wafers in the chamber. These byproducts can also damage the interior sides and top of the etching chamber.
  • a thin-walled, seamless, polymer liner placed snugly inside the chamber so as to cover the aluminum sides of the chamber was reported to draw etching by-products away from the semiconductor devices.
  • Sakai, et al. Japan Application No. 10-150137, May 16, 1999.
  • the Sakai patent application reports the transfer of etched by-products away from semiconductor wafers by the deposition of the by-products on the polymer liner surfaces in the interior of the chamber.
  • the polymer liner was reported to be thin, 2.0 mm or less in thickness, so that the temperature within the chamber is accurately regulated by the cooling means located outside of the chamber.
  • a liner having a wall thickness greater than 2.0 mm would insulate the contents of the chamber from the exterior cooling means allowing chamber surface temperatures to increase during etching processes. For this reason, higher surface temperatures would decrease the deposition of by-products on the polymer liner surfaces.
  • the Sakai patent application reports a solution to the problem of removing by-products away from semiconductor devices located in a chamber, however, other problems associated with etching still exist. Gas generated in the chamber can be highly toxic and could escape if the chamber integrity is compromised. Consequently, a device capable of protecting the walls and the top of chamber from the gas would be desirable. The device should have a long service life and be able to survive many hours of each individual operation because the removal and replacement of a chamber component slows down the production process and significantly increases manufacturing costs.
  • the present invention relates to dome and chamber liners that may be used during numerous dry etching processes while protecting the inside walls and top of the chamber.
  • the liners of the present invention are prepared from high performance resins having a wall thickness greater than 2.0 mm, and preferably in the range of 3 mm to 8 mm.
  • High performance resins are characteristically stable at high temperatures (above 100°C), resistant to wear, resistant to plasma and oxidative stress and dimensionally stable, i.e., tending not to creep or deform.
  • the service life of a liner correlates directly with the thickness of a liner.
  • Dome liners of the present invention fit to an inside top of a chamber of a dry etching apparatus used in semiconductor manufacture and comprise high performance resin.
  • the present invention relates to chamber liners that fit to an inside wall of a chamber of a dry etching apparatus used in semiconductor manufacture, said liners comprising a high performance resin having a wall thickness of greater than 2.0 mm.
  • the present invention also relates to a chamber of a dry etching apparatus comprising a dome liner of the present invention.
  • the dome liner fits to an inside top of the chamber.
  • the chamber may also include a chamber liner of the present invention.
  • dome liner refers to a covering used to cover the top interior portion of the chamber.
  • chamber liner refers to a covering used to cover the interior chamber sidewalls.
  • a liner for the top interior portion of a dry etching chamber may be prepared from a high performance resin.
  • a liner for the interior sidewalls of a dry etching chamber may be prepared from a high performance resin and may have a wall thickness of greater than 2.0 mm.
  • FIGURE 1 illustrates a dome liner of the present invention.
  • Figure 2 illustrates a chamber liner of the present invention.
  • Figure 3 illustrates an overhead view of a variation of a dome liner and the chamber liner in the present invention.
  • Figure 4 illustrates a side view of the dome liner and the chamber liner pictured in Figure 3.
  • FIG 5 illustrates the joint between the dome liner and the chamber liner pictured in Figure 4.
  • DETAILED DESCRIPTION OF THE INVENTION Dome and chamber liners of the present invention are prepared from high performance polymer resins, preferably a high-performance thermoplastic resin.
  • Suitable resins include polybenzimidazole, polyimide, polyetherimide, polyamideimide, polyaryletherketone, polycarbonate, polyarylate, polyethersulfone, aromatic polyamide, tetrafluoroethylene/perfluoroalkylvinyl ether copolymer (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), tetrafluoroethylene/hexafluoropropylene copolymer (FEP), polyvinylidend fluoride (PVDF), polyvinylfluoride (PVF), ethylene/tetrafluoroethylene copolymer (ETFE). It is preferred that the high performance resin contain no halogen atoms.
  • the high performance resins used in this invention may be readily processed by methods and processing equipment normally used in industry to form high performance polymers.
  • Typical methods for forming dome liners and chamber liners include spray coating, machining, injection molding, compression molding, plasma coating, rotomolding, strip bending and welding.
  • the forming conditions required to produce satisfactory articles depends on several process variables, such as mold complexity and dimensions, sheet thickness and polymer variables such as melt viscosity and glass transition temperature (Tg). These conditions can be determined by techniques typically used by those skilled in the art.
  • a dome liner is preferably in the shape of a dome that corresponds to the shape of the ceramic top of a chamber used in a dry etch process.
  • the dome liner may be molded into any shape that corresponds to the top of a chamber used in a dry etch process.
  • the chamber and dome liners of the present invention have a wall thickness preferably greater than 2.0 mm, and most preferably in the range of 3 mm to 8 mm.
  • the service life of a dome liner correlates directly with the thickness of the dome liner.
  • the chamber liner is preferably in the shape of the chamber.
  • a typical chamber liner would be cylindrical and 34.5 cm outer diameter and 10.2 cm high.
  • a dome liner in the shape of a dome having an outer diameter of 34.5 cm and a 10.2 cm deep.
  • the dome liner has less than 0.8 mm clearance with the dome to prevent the generation of plasma between the dome and the dome liner.
  • the chamber liner preferably has less than 0.8 mm clearance with chamber to prevent formation of plasma fields between the chamber and the liner.
  • the dome liner is not mechanically attached to the dome.
  • dome liner To use a dome liner, the dome liner is placed inside of the dome so that the convex side of the dome liner is juxtaposed with the concave inner part of the chamber.
  • the chamber liner To use the chamber liner, the chamber liner is placed inside of the chamber such that the annular surface of the liner with the greatest radius is juxtaposed with the inner radial surface of the chamber.
  • Dome and chamber liners of the present invention at 5 mm thickness may last at least 1000 RF (radio frequency) hours in a conventional dry etching process. Dome liners and chamber liners may be used separately or in conjunction with each other.
  • the dome liner of Figure 3 has an opening at the top of the dome. This open dome liner offers protection to domes in which the top of the dome of the plasma generation chamber is not involved in plasma generation and has no contact with harmful byproducts of the plasma generation process.
  • the dome liner of Figure 4 shows a dome liner 1 resting on top of the chamber liner 3.
  • the dome liner may have a groove system comprising a groove 5 on the dome liner that is complimentary to a groove 7 on the chamber liner. This groove system would aid in fitting the dome liner 1 with the chamber liner 3 when the dome liner 1 rests on top of the chamber liner 3.
  • the plaque was vacuum thermoformed using a standard industrial thermoformer equipped with ceramic heaters and a remote pyrometer to measure the surface temperature of the plaque while it is in the oven. Using a vacuum of about 95 kPa, a mold temperature between 246°C and 275°C and a sheet forming temperature between 250 and 275°C, the compression-molded plaque was formed into a dome having an outer diameter of 34.5 cm and a 10.2 cm deep draw and a minimum thickness of 2.5 mm. A top lip of the dome, formed through the molding process, was removed to provide the final article. The dome showed good mold surface replication. The dome was subsequently trimmed using conventional milling machines into the desired final part.
  • liner material was not provided at the very apex of the dome since most significant erosion of the dome was occurring at the periphery of the dome immediately under the RF coils that induce the plasma.
  • Two 50.8 mm high annular plates of pyromellitic dianhydride 4,4'-diaminodiphenylether polyimide (as used in DuPont Vespel® SP-1 parts and shapes), having outer diameters of 360 mm and inner diameters of 196 mm, were machined and assembled together to line the lower 100 mm of the chamber dome.
  • the lower plate was machined into a cylinder or outer diameter 345 mm and a wall thickness of 3 mm.
  • a mating groove was cut into the top surface from the middle of the wall to the outer diameter.
  • An upper place covered all the critical areas of the curvature of the dome.
  • the outer surface was turned on a lathe to match the surface shape of the particular dome.
  • the thickness of the liner was set at 5 mm when the inner surface was turned.
  • An extra tab of material was left on the lower surface around the outer diameter to interlock with the lower plate.
  • a dome of the type in Dome Liner 1 was prepared. An untrimmed part was then trimmed on both the top and the bottom with a cutting tool to form a seamless ring 5.1 cm high, 3 mm thickness and having an outer diameter of 345 cm. The chamber liner was then machined to uniform thickness.
  • a plaque of the type in Dome Liner 1 was prepared.
  • the plaque had the dimensions 740mm x 740mm x 450mm.
  • This plaque was placed in a drying oven set at 200°C for 48 hours.
  • the dry plaque was vacuum thermoformed using a standard industrial thermoformer equipped with ceramic heaters and a remote pyrometer to measure the surface temperature of the plaque while in the oven.
  • a vacuum of about 95 kPa a mold temperature between 215°C and 238°C and a sheet forming temperature 275°C
  • the compression-molded plaques were formed into domes having an outer diameter of 60.8 cm and a 12.7cm deep draw.
  • An open untrimmed end of the dome was then trimmed on both the top and the bottom with a cutting tool to form a seamless ring 11.4 cm high having an outer diameter of 60.8 cm and a minimum wall thickness of 4.85mm.
  • the chamber liner was then machined to uniform thickness.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

A liner is provided for protecting the inside chamber and dome used in semiconductor fabrication. This liner is capable of protecting the dome and chamber against corrosion caused by plasma field generation and byproducts of dry etching processes. In addition, the liner described in this invention has a long life under conditions induced by plasma field generation.

Description

TITLE LINER FOR SEMICONDUCTOR ETCHING CHAMBER
FIELD OF THE INVENTION The present invention relates to dome liners and chamber liners for use in processes involving dry etching of semiconductor devices.
BACKGROUND OF THE INVENTION Dry etching processes using chambers with dome-shaped ceramic or aluminum tops and aluminum sides and bottoms, in part, are used to manufacture semiconductor wafers. The dry etch process uses plasma state gases to perform chemical and physical erosion on unprotected surfaces of a semiconductor wafer surface. The mixture of gases used, as well as other variables such as the electrical power and pressure settings, will alter the aggressiveness and uniformity of erosion of the semiconductor surface and the chamber. The chamber is filled with gas and semiconductor wafers are placed inside the chamber. Gas is then ionized with a plasma field to make the gas reactive so as to etch wafers inside the chambers. A plasma field is usually made of chemically active species of gaseous compounds such as fluorine, oxygen and chlorine. The exact mixture of gaseous compounds is chosen to balance the functions of the individual gases so as to achieve a desired etch activity. Etching can result in the generation of etching by-products that, if not removed, will eventually contact and damage the wafers in the chamber. These byproducts can also damage the interior sides and top of the etching chamber.
A thin-walled, seamless, polymer liner placed snugly inside the chamber so as to cover the aluminum sides of the chamber was reported to draw etching by-products away from the semiconductor devices. Sakai, et al., Japan Application No. 10-150137, May 16, 1999. Using a thin polymer liner to maintain uniform chamber surface temperatures during etching processes, the Sakai patent application reports the transfer of etched by-products away from semiconductor wafers by the deposition of the by-products on the polymer liner surfaces in the interior of the chamber. The polymer liner was reported to be thin, 2.0 mm or less in thickness, so that the temperature within the chamber is accurately regulated by the cooling means located outside of the chamber. As reported in the Sakai patent application, a liner having a wall thickness greater than 2.0 mm would insulate the contents of the chamber from the exterior cooling means allowing chamber surface temperatures to increase during etching processes. For this reason, higher surface temperatures would decrease the deposition of by-products on the polymer liner surfaces.
The Sakai patent application reports a solution to the problem of removing by-products away from semiconductor devices located in a chamber, however, other problems associated with etching still exist. Gas generated in the chamber can be highly toxic and could escape if the chamber integrity is compromised. Consequently, a device capable of protecting the walls and the top of chamber from the gas would be desirable. The device should have a long service life and be able to survive many hours of each individual operation because the removal and replacement of a chamber component slows down the production process and significantly increases manufacturing costs.
In view of the foregoing, a liner for a chamber interior for etching semiconductor devices that has a long life and protects against chamber corrosion has been developed.
SUMMARY OF THE INVENTION
In one aspect, the present invention relates to dome and chamber liners that may be used during numerous dry etching processes while protecting the inside walls and top of the chamber. The liners of the present invention are prepared from high performance resins having a wall thickness greater than 2.0 mm, and preferably in the range of 3 mm to 8 mm. High performance resins are characteristically stable at high temperatures (above 100°C), resistant to wear, resistant to plasma and oxidative stress and dimensionally stable, i.e., tending not to creep or deform. The service life of a liner correlates directly with the thickness of a liner. Dome liners of the present invention fit to an inside top of a chamber of a dry etching apparatus used in semiconductor manufacture and comprise high performance resin.
In another aspect, the present invention relates to chamber liners that fit to an inside wall of a chamber of a dry etching apparatus used in semiconductor manufacture, said liners comprising a high performance resin having a wall thickness of greater than 2.0 mm.
The present invention also relates to a chamber of a dry etching apparatus comprising a dome liner of the present invention. The dome liner fits to an inside top of the chamber. The chamber may also include a chamber liner of the present invention.
As used herein, with respect to the present invention, the following shall apply:
"dome liner" refers to a covering used to cover the top interior portion of the chamber.
"chamber liner" refers to a covering used to cover the interior chamber sidewalls.
A liner for the top interior portion of a dry etching chamber may be prepared from a high performance resin. A liner for the interior sidewalls of a dry etching chamber may be prepared from a high performance resin and may have a wall thickness of greater than 2.0 mm.
DESCRIPTION OF THE FIGURES Figure 1 illustrates a dome liner of the present invention. Figure 2 illustrates a chamber liner of the present invention. Figure 3 illustrates an overhead view of a variation of a dome liner and the chamber liner in the present invention.
Figure 4 illustrates a side view of the dome liner and the chamber liner pictured in Figure 3.
Figure 5 illustrates the joint between the dome liner and the chamber liner pictured in Figure 4. DETAILED DESCRIPTION OF THE INVENTION Dome and chamber liners of the present invention are prepared from high performance polymer resins, preferably a high-performance thermoplastic resin. Suitable resins include polybenzimidazole, polyimide, polyetherimide, polyamideimide, polyaryletherketone, polycarbonate, polyarylate, polyethersulfone, aromatic polyamide, tetrafluoroethylene/perfluoroalkylvinyl ether copolymer (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), tetrafluoroethylene/hexafluoropropylene copolymer (FEP), polyvinylidend fluoride (PVDF), polyvinylfluoride (PVF), ethylene/tetrafluoroethylene copolymer (ETFE). It is preferred that the high performance resin contain no halogen atoms.
The high performance resins used in this invention may be readily processed by methods and processing equipment normally used in industry to form high performance polymers. Typical methods for forming dome liners and chamber liners include spray coating, machining, injection molding, compression molding, plasma coating, rotomolding, strip bending and welding. The forming conditions required to produce satisfactory articles depends on several process variables, such as mold complexity and dimensions, sheet thickness and polymer variables such as melt viscosity and glass transition temperature (Tg). These conditions can be determined by techniques typically used by those skilled in the art.
As shown in Figure 1, a dome liner is preferably in the shape of a dome that corresponds to the shape of the ceramic top of a chamber used in a dry etch process. However, the dome liner may be molded into any shape that corresponds to the top of a chamber used in a dry etch process.
The chamber and dome liners of the present invention have a wall thickness preferably greater than 2.0 mm, and most preferably in the range of 3 mm to 8 mm. The service life of a dome liner correlates directly with the thickness of the dome liner. As shown in Figure 2, the chamber liner is preferably in the shape of the chamber.
A typical chamber liner would be cylindrical and 34.5 cm outer diameter and 10.2 cm high. On top of the chamber liner would be a dome liner in the shape of a dome having an outer diameter of 34.5 cm and a 10.2 cm deep. Preferably, the dome liner has less than 0.8 mm clearance with the dome to prevent the generation of plasma between the dome and the dome liner. Similarly, the chamber liner preferably has less than 0.8 mm clearance with chamber to prevent formation of plasma fields between the chamber and the liner. Also preferably, the dome liner is not mechanically attached to the dome.
To use a dome liner, the dome liner is placed inside of the dome so that the convex side of the dome liner is juxtaposed with the concave inner part of the chamber. To use the chamber liner, the chamber liner is placed inside of the chamber such that the annular surface of the liner with the greatest radius is juxtaposed with the inner radial surface of the chamber. Dome and chamber liners of the present invention at 5 mm thickness may last at least 1000 RF (radio frequency) hours in a conventional dry etching process. Dome liners and chamber liners may be used separately or in conjunction with each other.
The dome liner of Figure 3 has an opening at the top of the dome. This open dome liner offers protection to domes in which the top of the dome of the plasma generation chamber is not involved in plasma generation and has no contact with harmful byproducts of the plasma generation process.
The dome liner of Figure 4 shows a dome liner 1 resting on top of the chamber liner 3. As show in Figure 5 and described in Dome Liner 2 and Chamber Liner 1 below, the dome liner may have a groove system comprising a groove 5 on the dome liner that is complimentary to a groove 7 on the chamber liner. This groove system would aid in fitting the dome liner 1 with the chamber liner 3 when the dome liner 1 rests on top of the chamber liner 3.
EXAMPLES Dome Liner 1
1400 g of an amorphous, aromatic thermoplastic polyimide resin having a Tg of 239°C were placed into a 43.2 cm x 43.2 cm plaque mold. The top plate of the plaque mold was added and the mold was placed into a preheated (296°C) platen press having a platen size of 61 cm x 61 cm. A thermocouple was inserted into the plaque mold and the plague mold allowed to heat up without pressure to 288°C. At this point 3.44 x 106 Pascal of pressure was applied. After 1 minute the cooling cycle on the press was started and the plaque mold allowed to cool to room temperature under pressure. Once cool, a compression molded plaque or 5 mm thickness was removed from the mold.
The plaque was vacuum thermoformed using a standard industrial thermoformer equipped with ceramic heaters and a remote pyrometer to measure the surface temperature of the plaque while it is in the oven. Using a vacuum of about 95 kPa, a mold temperature between 246°C and 275°C and a sheet forming temperature between 250 and 275°C, the compression-molded plaque was formed into a dome having an outer diameter of 34.5 cm and a 10.2 cm deep draw and a minimum thickness of 2.5 mm. A top lip of the dome, formed through the molding process, was removed to provide the final article. The dome showed good mold surface replication. The dome was subsequently trimmed using conventional milling machines into the desired final part.
Dome Liner 2 and Chamber Liner 1
For this example, liner material was not provided at the very apex of the dome since most significant erosion of the dome was occurring at the periphery of the dome immediately under the RF coils that induce the plasma. Two 50.8 mm high annular plates of pyromellitic dianhydride 4,4'-diaminodiphenylether polyimide (as used in DuPont Vespel® SP-1 parts and shapes), having outer diameters of 360 mm and inner diameters of 196 mm, were machined and assembled together to line the lower 100 mm of the chamber dome.
The lower plate was machined into a cylinder or outer diameter 345 mm and a wall thickness of 3 mm. A mating groove was cut into the top surface from the middle of the wall to the outer diameter.
An upper place covered all the critical areas of the curvature of the dome. The outer surface was turned on a lathe to match the surface shape of the particular dome. The thickness of the liner was set at 5 mm when the inner surface was turned. An extra tab of material was left on the lower surface around the outer diameter to interlock with the lower plate. When the upper machined plate was placed on the lower machined plate in the chamber, the upper machined plate was held in place by gravity and the restraints of the dome immediately above and around it.
Chamber Liner 2
A dome of the type in Dome Liner 1 was prepared. An untrimmed part was then trimmed on both the top and the bottom with a cutting tool to form a seamless ring 5.1 cm high, 3 mm thickness and having an outer diameter of 345 cm. The chamber liner was then machined to uniform thickness.
Chamber Liner 3
A plaque of the type in Dome Liner 1 was prepared. The plaque had the dimensions 740mm x 740mm x 450mm. This plaque was placed in a drying oven set at 200°C for 48 hours. The dry plaque was vacuum thermoformed using a standard industrial thermoformer equipped with ceramic heaters and a remote pyrometer to measure the surface temperature of the plaque while in the oven. Using a vacuum of about 95 kPa, a mold temperature between 215°C and 238°C and a sheet forming temperature 275°C, the compression-molded plaques were formed into domes having an outer diameter of 60.8 cm and a 12.7cm deep draw.
An open untrimmed end of the dome was then trimmed on both the top and the bottom with a cutting tool to form a seamless ring 11.4 cm high having an outer diameter of 60.8 cm and a minimum wall thickness of 4.85mm. The chamber liner was then machined to uniform thickness.

Claims

1. A liner for the top interior portion of a dry etching chamber comprising a high performance resin.
2. A liner according to Claim 1 which is in the shape of a dome.
3. A liner according to Claim 1 which is open at the top.
4. A liner according to Claim 1 which has a wall thickness of greater than 2.0 mm.
5. A liner according to Claim 1 which has a wall thickness greater than 3.0 mm and less than 8.0 mm.
6. A liner according to Claim 1 wherein the high performance resin is a thermoplastic.
7. A liner according to Claim 1 wherein the high performance resin is selected from the group consisting of polybenzimidazole, polyimide, polyetherimide, polyamideimide, polyaryletherketone, polycarbonate, polyarylate, polyethersulfone, aromatic polyamide, tetrafluoroethylene/perfluoroalkylvinyl ether copolymer (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), tetrafluoroethylene/hexahluoropropylene copolymer (FEP), polyvinylidend fluoride (PVDF), polyvinylfluoride (PVF), and ethylene/tetrafluoroethylene copolymer (ETFE).
8. A liner according to Claim 1 wherein the high performance resin is a polyimide or a polyetherimide.
9. A liner according to Claim 1 wherein the high performance resin contains no halogen atoms.
10. A liner for the interior sidewalls of a dry etching chamber comprising a high performance resin and having a wall thickness of greater than 2.0 mm.
11. A liner according to Claim 10 which is in the shape of a cylinder.
12. A liner according to Claim 10 which has a wall thickness greater than 3.0 mm and less than 8.0 mm.
13. A liner according to Claim 10 wherein the high performance resin is a thermoplastic.
14. A liner according to Claim 10 wherein the high performance resin is selected from the group consisting of polybenzimidazole, polyimide, polyetherimide, polyamideimide, polyaryletherketone, polycarbonate, polyarylate, polyethersulfone, aromatic polyamide, tetrafluoroethylene/perfluoroalkylvinyl ether copolymer (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), tetrafluoroethylene/hexahluoropropylene copolymer (FEP), polyvinylidend fluoride (PVDF), polyvinylfluoride (PVF), and ethylene/tetrafluoroethylene copolymer (ETFE).
15. A liner according to Claim 10 wherein the high performance resin is a polyimide or a polyetherimide.
16. A liner according to Claim 10 wherein the high performance resin contains no halogen atoms.
17. A dry etching chamber comprising the liner of Claim 1.
18. A dry etching chamber comprising the liner of Claim 10.
19. A dry etching chamber according to Claim 17 further comprising the liner of Claim 10.
20. A dry etching chamber according to Claim 17 wherein there is less than 0.8 mm clearance between the liner and the top of the chamber.
21. A dry etching chamber according to Claim 18 wherein there is less than 0.8 mm clearance between the liner and the sidewalls of the chamber.
22. A dry etching chamber according to Claim 17 wherein the liner is not mechanically attached to the top of the chamber.
EP01904835A 2000-01-11 2001-01-11 Liner for semiconductor etching chamber Withdrawn EP1247287A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US48199400A 2000-01-11 2000-01-11
US481994 2000-01-11
PCT/US2001/000950 WO2001052303A1 (en) 2000-01-11 2001-01-11 Liner for semiconductor etching chamber

Publications (1)

Publication Number Publication Date
EP1247287A1 true EP1247287A1 (en) 2002-10-09

Family

ID=23914217

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01904835A Withdrawn EP1247287A1 (en) 2000-01-11 2001-01-11 Liner for semiconductor etching chamber

Country Status (5)

Country Link
EP (1) EP1247287A1 (en)
JP (1) JP2003520429A (en)
CN (1) CN1394351A (en)
CA (1) CA2393283A1 (en)
WO (1) WO2001052303A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3776856B2 (en) * 2002-09-13 2006-05-17 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
DE20319104U1 (en) * 2003-12-09 2004-04-08 Infineon Technologies Ag Arrangement for the heat treatment of silicon wafers in a process chamber

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478478A (en) * 1990-07-18 1992-03-12 Fujitsu Ltd Apparatus for producing semiconductor and method for cleaning this apparatus
JPH08191058A (en) * 1995-01-12 1996-07-23 Sony Corp Plasma treating device
JP3444090B2 (en) * 1996-04-22 2003-09-08 日清紡績株式会社 Protective member for plasma processing equipment
US5945354A (en) * 1997-02-03 1999-08-31 Motorola, Inc. Method for reducing particles deposited onto a semiconductor wafer during plasma processing
JP2001514444A (en) * 1997-08-26 2001-09-11 アプライド マテリアルズ インコーポレイテッド Apparatus and method capable of sending stable power to a plasma processing chamber
JP3674282B2 (en) * 1997-12-25 2005-07-20 日立化成工業株式会社 Plasma generating apparatus, chamber inner wall protecting member and manufacturing method thereof, chamber inner wall protecting method and plasma processing method
JP3748712B2 (en) * 1998-05-29 2006-02-22 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Resin molded body for liner

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0152303A1 *

Also Published As

Publication number Publication date
CN1394351A (en) 2003-01-29
CA2393283A1 (en) 2001-07-19
WO2001052303A1 (en) 2001-07-19
JP2003520429A (en) 2003-07-02

Similar Documents

Publication Publication Date Title
KR100460143B1 (en) Process chamber for using semiconductor fabricating equipment
US8262922B2 (en) Plasma confinement rings having reduced polymer deposition characteristics
JP4263245B2 (en) Particle control method and plasma processing chamber
KR20160004201A (en) Multi-zone pedestal for plasma processing
TW201526101A (en) Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
WO2010008827A2 (en) Pedestal heater for low temperature pecvd application
US10515843B2 (en) Amalgamated cover ring
WO2000010192A1 (en) Plasma density and etch rate enhancing semiconductor processing chamber
US11682576B2 (en) Pedestal heater for spatial multi-wafer processing tool
KR102343265B1 (en) Self-centering pedestal heater
WO2001052303A1 (en) Liner for semiconductor etching chamber
WO2018213621A2 (en) Thermal chamber with improved thermal uniformity
CN101541140B (en) Plasma treatment equipment and shielding ring thereof
US20210287925A1 (en) Substrate support plate and semiconductor manufacturing apparatus
US9502279B2 (en) Installation fixture having a micro-grooved non-stick surface
JP2004186329A (en) Sealing member and plasma treatment apparatus
EP1090414B1 (en) Resin molded article for chamber liner
CN219286334U (en) Movable ring and plasma processing equipment
US20170047235A1 (en) Cover Plate, Plasma Treatment System Including the Same and Plasma Treatment Method of the Plasma Treatment System
CN109767968B (en) Lower electrode structure and reaction chamber
US20230095095A1 (en) Method of isolating the chamber volume to process volume with internal wafer transfer capability
KR200197642Y1 (en) Plasma etching process chamber use in manufacture semiconductor
KR100343468B1 (en) Wafer holding chuck
KR100337612B1 (en) Method of bell jar for making semiconductor device
CN114203513A (en) Power electrode and plasma processing equipment

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20020621

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

RBV Designated contracting states (corrected)

Designated state(s): BE DE FR GB IT NL

17Q First examination report despatched

Effective date: 20090113

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20090526