JPH0478478A - Apparatus for producing semiconductor and method for cleaning this apparatus - Google Patents

Abstract

PURPOSE:To clean the inside of the apparatus by an exchange of dustproof films by sticking the dustproof films which have the flexibility, do not generate dust and are free from contamination to the inside walls of the apparatus. CONSTITUTION:A reactive gas introducing port 2 and a discharge port 3 are provided in an etching chamber 1 and the polyimide films are stuck as the dustproof films to the inside walls of the etching chamber 1. There are electrodes 4, 5 in the etching chamber 1 and a high-frequency electric power is impressed between these electrodes by a high-frequency power source 6. The polymer generated as a result of an etching treatment sticks and deposits on the electrodes and the polyimide films stuck to the inside walls. The cleaning of the etching apparatus is ended by exchanging the electrodes and the polyimide films stuck with the polymer. The cleaning in the apparatus is extremely simplified in this way and the time when the apparatus is stopped by the cleaning is shortened and further, the production yield of devices and earthquake resistance are improved by the prevention of contamination.

Description

DETAILED DESCRIPTION OF THE INVENTION [Summary] This invention relates to a method for cleaning semiconductor manufacturing equipment such as dry etching equipment and chemical vapor deposition (CVD) equipment.

The purpose of this invention is to provide a cleaning method for semiconductor manufacturing equipment that can be carried out in a short time and does not damage the inner walls, in order to prevent contamination inside the equipment due to dust generated during processing.

1) By pasting a dust-proof film made of a material that is flexible, generates little dust, and is non-contaminating on the inside wall of the device, the fine particles generated inside the device will not be deposited directly on the inside wall of the device, but will be deposited on the dust-proof film. The apparatus is configured so that the inside of the apparatus is cleaned by replacing the dustproof film.

2) The dustproof film is made of polyimide.

3) The device has a structure in which the inner wall of the device has a dustproof film made of a flexible material that generates little dust and is free from contamination, and the dustproof film is replaceable.

[Industrial application field]

The present invention is applicable to dry etching equipment and chemical vapor deposition (CVD).
) relates to a method for cleaning semiconductor manufacturing equipment such as equipment.

In recent years, as semiconductor devices have become highly integrated, dust generation from semiconductor manufacturing equipment has become a problem.

As a source of dust from the equipment.

(1) Dust generation from the members that make up the device.

(2) Dust generation due to polymer (reaction polymer) generated during processing, etc. can be mentioned.

As for the cause of (1), dust generation has been significantly suppressed due to the high purity of the components.

Regarding the cause (2), the generation of polymers and the like inevitably occurs depending on the process used. for that.

It is necessary to clean the inside of the device regularly.

The present invention can be used to prevent contamination of the inner walls of an apparatus due to dust generated during processing.

[Prior Art] The present invention will hereinafter be described using a dry etching apparatus that generates a large amount of dust during processing as an example of a semiconductor manufacturing apparatus.

The second part is a schematic sectional view of a dry etching apparatus to explain a conventional example.

In the figure, 1 is an etching chamber, 2 is a reaction gas inlet,
3 is an exhaust port, 4 and 5 are electrodes, and 6 is a radio frequency (RF) source.

In dry etching, a reactive gas is selected so as to generate a polymer in order to obtain a selectivity between the film to be etched and the underlying film.

For example, if the film to be etched is silicon dioxide (Sing)
If the underlying film is a polysilicon film.

CF4 and CHF are used as reaction gases, and the proportion of CHF5 is being increased in order to increase orders for polymer.

At this time, the polymer generated during etching adheres to the inner wall of the etching chamber.

Here, since polymer has the property of being easily adsorbed and deposited in low-temperature areas, polymer deposition is prevented by keeping the inside of the etching device at an appropriate temperature, but this method is insufficient and the polymer Deposits inside the etching chamber.

On the other hand, the polymer deposition on the 1i pole is as follows.

That is, the problem can be solved by basically not depositing polymer on one electrode because the wafer is mounted thereon, and by replacing the other electrode on which the wafer is not mounted.

One problem is the polymer deposited inside the etching chamber.

Etching chambers are large and often integrated with the equipment, so they cannot be removed and replaced.

For this purpose, the inside of the device must be cleaned with an organic solvent.

However, it is difficult to completely remove the polymer adhered during etching using an organic solvent alone, and it is necessary to apply physical force with a spatula or the like to remove it.

[Problem to be solved by the invention]

One of the problems with the conventional technology for cleaning the inside of the device is the following.

(1) Cleaning with organic solvents is difficult and takes a long time.

(2) Since the polymer is scraped off with a spatula or the like, secondary contamination occurs due to the peeled polymer, and the highly purified etching chamber wall is scratched, causing generation of fine particles and contamination.

An object of the present invention is to provide a cleaning method for semiconductor manufacturing equipment that can be carried out in a short time and does not damage the inner walls, in order to prevent the inside of the equipment from being contaminated by dust generated during processing.

[Means to solve the problem]

The solution to the above problem is to apply a dustproof film made of a flexible, non-contaminating substance that generates little dust to the inner wall of the device, so that the fine particles (polymer, etc.) generated inside the device will not accumulate directly on the inner wall of the device. A cleaning method for semiconductor manufacturing equipment in which the inside of the equipment is cleaned by replacing the dust-proof film, or the inside wall of the equipment is flexible, generates little dust, and is free from contamination. This is achieved by a semiconductor manufacturing apparatus that has a dustproof film that is replaceable.

Furthermore, it is particularly effective when the dustproof film is made of polyimide.

[Operation] The problem with the conventional method is that the polymer is deposited directly on the inner wall of the device, which cannot be removed.

It is sufficient to prevent the polymer from being deposited directly on the inner walls of the device.

In the present invention, by pasting a dustproof film made of a substance that generates little dust and is free of contamination on the inner wall of the device, the polymer generated inside the device is not directly deposited on the inner wall of the device, but is deposited on the film. The inside of the device is cleaned by replacing it.

As a film made of substances that generate little dust and are free of contamination, 1
For example, there is polyimide film.

The suitability of the polyimide film was confirmed as follows.

A polyimide film is used to cover the temperature measurement template attached to the heated wafer.

Repeated experiments were conducted to prevent heavy metal contamination from the template, and it was confirmed that there was no contamination from the polyimide film heated to high temperatures.

Therefore, it can be expected that there will be no problems in the case of the present invention in which the polyimide film is used at low temperatures.

Furthermore, the dustproof film is flexible and can be attached to and removed from inner walls extremely easily.

〔Example〕

FIG. 1 is a schematic sectional view of a dry etching apparatus illustrating an embodiment of the present invention.

In the figure, 1 is an etching chamber, 2 is a reaction gas inlet,
, 3 is an exhaust port, 4 and 5 are electrodes, 6 is a high frequency (12F) power source, and 7 is a dustproof film, which is a polyimide film.

The etching chamber 1 is provided with a reactive gas inlet 2 and an exhaust port 3, and a polyimide film 7 is pasted on the inner wall of the etching chamber 1 as a dustproof film.

Note that within the etching chamber 1 there is an electrode 4.5.

During this time, high frequency power is applied by the high frequency power supply 6.

The polymer generated during the etching process is! It adheres and deposits on the polyimide film attached to the poles and inner walls.

Cleaning of the etching apparatus is completed by replacing the electrodes and polyimide film to which the polymer has adhered.

The polyimide film used in the examples was manufactured by CHR Industries and had adhesive strips on one side.

In the examples, a polyimide film was used as the dustproof film, but the gist of the present invention does not change even if other resin films that are easily reattached, such as Teflon tape (PTFE FILM Tape manufactured by Seotch), are used instead.

〔Effect of the invention〕

As explained above, according to the present invention, a method for cleaning semiconductor manufacturing equipment that can be carried out in a short time and does not damage the inner wall in order to prevent the inside of the equipment from being contaminated by dust generated during processing has been obtained.

As a result, cleaning inside the device is extremely easy.

Cleaning reduces equipment downtime and also
Preventing contamination will improve device manufacturing yield and earthquake resistance.

[Brief explanation of drawings]

FIG. 1 is a schematic sectional view of a dry etching apparatus illustrating an embodiment of the present invention. FIG. 2 is a schematic sectional view of a dry etching apparatus illustrating a conventional example. In fig. 1 is the etching room. 2 is a reaction gas inlet. 3 is the exhaust port. 4.5 is an electrode. 6 is a high frequency (total) power supply. 7 is a schematic cross-sectional view of a dustproof film and a polyamide film embodiment. Figure 1 is a schematic cross-sectional view of a conventional example. Figure 2 is a schematic cross-sectional view of a conventional example.

Claims (1)

[Scope of Claims] 1) By applying a dustproof film made of a material that is flexible, generates little dust, and does not cause contamination to the inner wall of the device, fine particles generated within the device are prevented from directly accumulating on the inner wall of the device. 1. A method for cleaning semiconductor manufacturing equipment, which comprises depositing dust on a dustproof film and cleaning the inside of the equipment by replacing the dustproof film. 2) The method for cleaning semiconductor manufacturing equipment according to claim 1, wherein the dustproof film is made of polyimide. 3) Semiconductor manufacturing equipment having a dustproof film made of a flexible, non-contaminating substance that generates little dust on the inner wall of the equipment, and in which the dustproof film is replaceable.