EP1193815A3 - Semiconductor laser device and optical fiber amplifier using the same - Google Patents

Semiconductor laser device and optical fiber amplifier using the same Download PDF

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Publication number
EP1193815A3
EP1193815A3 EP01123211A EP01123211A EP1193815A3 EP 1193815 A3 EP1193815 A3 EP 1193815A3 EP 01123211 A EP01123211 A EP 01123211A EP 01123211 A EP01123211 A EP 01123211A EP 1193815 A3 EP1193815 A3 EP 1193815A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor laser
laser device
layer
optical fiber
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01123211A
Other languages
German (de)
French (fr)
Other versions
EP1193815A2 (en
EP1193815B1 (en
Inventor
Junji Yoshida
Naoki Tsukiji
Tsuyoshi Saito
Satoshi Irino
Ryuichiro Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000302956A external-priority patent/JP2002111135A/en
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Publication of EP1193815A2 publication Critical patent/EP1193815A2/en
Publication of EP1193815A3 publication Critical patent/EP1193815A3/en
Application granted granted Critical
Publication of EP1193815B1 publication Critical patent/EP1193815B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A semiconductor laser device with an active layer (4) having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a resonator length of more than 800µm is disclosed, wherein the active layer (4) includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region (4), comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers (3A,3B) falls having a thickness within a range of from about 20 to about 50nm. An optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device (8) sealed within a package (10) disposed over a cooler (9), and wherein a light incidence facet of an optical fiber (12) is optically coupled to the optical output power facet of the semiconductor laser device (8).
EP20010123211 2000-10-02 2001-10-01 Semiconductor laser device and optical fiber amplifier using the same Expired - Lifetime EP1193815B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000302956 2000-10-02
JP2000302956A JP2002111135A (en) 2000-10-02 2000-10-02 Semiconductor laser device and optical fiber amplifier exciting light source using the same
US877952 2001-06-08
US09/877,952 US7006545B2 (en) 2000-10-02 2001-06-08 Semiconductor laser device and optical fiber amplifier using the same

Publications (3)

Publication Number Publication Date
EP1193815A2 EP1193815A2 (en) 2002-04-03
EP1193815A3 true EP1193815A3 (en) 2002-05-02
EP1193815B1 EP1193815B1 (en) 2006-05-10

Family

ID=26601414

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20010123211 Expired - Lifetime EP1193815B1 (en) 2000-10-02 2001-10-01 Semiconductor laser device and optical fiber amplifier using the same

Country Status (3)

Country Link
EP (1) EP1193815B1 (en)
CA (1) CA2357974C (en)
DE (1) DE60119464D1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881235A (en) * 1985-07-26 1989-11-14 Hitachi, Ltd. Semiconductor laser having a multiple quantum well structure doped with impurities
EP0403153A2 (en) * 1989-06-15 1990-12-19 AT&T Corp. A method for forming a heteroepitaxial structure
EP0500962A1 (en) * 1990-09-12 1992-09-02 The Furukawa Electric Co., Ltd. Quantum-well-type semiconductor laser element
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881235A (en) * 1985-07-26 1989-11-14 Hitachi, Ltd. Semiconductor laser having a multiple quantum well structure doped with impurities
EP0403153A2 (en) * 1989-06-15 1990-12-19 AT&T Corp. A method for forming a heteroepitaxial structure
EP0500962A1 (en) * 1990-09-12 1992-09-02 The Furukawa Electric Co., Ltd. Quantum-well-type semiconductor laser element
US5889805A (en) * 1996-11-01 1999-03-30 Coherent, Inc. Low-threshold high-efficiency laser diodes with aluminum-free active region

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
RALSTON J D ET AL: "P-DOPANT INCORPORATION AND INFLUENCE ON GAIN AND DAMPING BEHAVIOUR IN HIGH-SPEED GAAS-BASED STRAINED MQW LASERS", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B21, no. 2/3, 20 November 1993 (1993-11-20), pages 232 - 236, XP000414108, ISSN: 0921-5107 *
TANAKA T ET AL: "FREQUENCY CONTROL OF SELF-SUSTAINED PULSATING LASER DIODES BY UNIFORM IMPURITY DOPING INTO MULTIPLE-QUANTUM-WELL STRUCTURES", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 10, no. 1, 1998, pages 48 - 50, XP000737122, ISSN: 1041-1135 *
TANAKA T ET AL: "UNIFORM P-TYPE IMPURITY-DOPED MULTIQUANTUM WELL ALGAINP SEMICONDUCTOR LASERS WITH A LASING WAVELENGTH OF 633 NM AT 20 C", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 59, no. 16, 14 October 1991 (1991-10-14), pages 1943 - 1945, XP000257411, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
CA2357974C (en) 2009-01-06
EP1193815A2 (en) 2002-04-03
DE60119464D1 (en) 2006-06-14
CA2357974A1 (en) 2002-04-02
EP1193815B1 (en) 2006-05-10

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