EP1147583A1 - Laser a gaz a energie stabilisee - Google Patents

Laser a gaz a energie stabilisee

Info

Publication number
EP1147583A1
EP1147583A1 EP00971649A EP00971649A EP1147583A1 EP 1147583 A1 EP1147583 A1 EP 1147583A1 EP 00971649 A EP00971649 A EP 00971649A EP 00971649 A EP00971649 A EP 00971649A EP 1147583 A1 EP1147583 A1 EP 1147583A1
Authority
EP
European Patent Office
Prior art keywords
laser
gas
energy
gas mixture
xenon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00971649A
Other languages
German (de)
English (en)
Inventor
Uwe Stamm
Igor Bragin
Wolfgang Zschocke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lambda Physik AG
Original Assignee
Lambda Physik AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/484,818 external-priority patent/US6243405B1/en
Priority claimed from US09/513,025 external-priority patent/US6714577B1/en
Application filed by Lambda Physik AG filed Critical Lambda Physik AG
Publication of EP1147583A1 publication Critical patent/EP1147583A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/104—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm

Definitions

  • the invention relates to gas discharge lasers, particularly to excimer and
  • molecular fluorine lasers having gas mixtures with optimal concentrations of
  • specific component gases such as halogen containing species, active rare gases, buffer gases, and a xenon additive for improving pulse-to-pulse and
  • excimer laser describes gas lasers in which the lasing
  • excimers e.g. Ar 2 *
  • exciplexes e.g. ArF*
  • trimers e.g.
  • invention primarily concerns excimer lasers in which the lasing medium is
  • the present invention relates to molecular
  • Fig. 1 Energy overshoot, or spiking, is observed when the laser is operated with constant high voltage at
  • emitted laser radiation pulses are dependent upon and are sensitive to
  • the laser gas discharge chamber and the composition of the gas are also very long
  • the gas can be present in the gas mixture from the very beginning or they
  • Oxygen is not an inert gas, and its effects on other
  • parameters of the excimer laser such as the uniformity of the emission
  • KrF-excimer laser gas mixtures typically comprise around 1 % Kr
  • an additive such as a noble gas, e.g., preferably xenon
  • xenon or argon to a KrF-laser, argon or krypton to a XeCI- or XeF-
  • molecular fluorine laser having a gas mixture including an appropriate
  • the energy stability is determined based on both the stability of
  • an excimer laser such as a KrF-
  • the gas additive is preferably xenon.
  • gas additive is selected and may be adjusted in accordance with selected
  • the xenon concentration selection may be further based on the
  • the pulse width is a parameter of output pulse energy control.
  • the pulse width is a parameter of output pulse energy control.
  • energy may be attenuated, e.g., to advantageously lengthen the laser pulses
  • the pulse energy or energy dose may be regulated by
  • a gas discharge laser such as an excimer or molecular fluorine laser in
  • a laser tube including an electrode
  • the laser tube is filled with a
  • gas mixture including a laser active gas or gases, a buffer and a trace amount
  • a characteristic energy stability such as standard deviation sigma, and/or
  • output energy level of the laser such as for energy attenuation control or for
  • the preferred laser system is equipped with an internal gas supply unit
  • amplified spontaneous emission ASE
  • spatial pulse shape and/or one or more other parameters such as total
  • control of the amount of the gas additive in the gas mixture is also known.
  • the power of the laser system within the range of operating driving voltages. Then, the power is attenuated by adding more of the gas additive,
  • the amount of the laser components As the laser components age, the amount of the laser components, the amount of the laser components, the amount of the laser components, the amount of the laser components, the amount of the laser components, the amount of the laser components, the amount of
  • additive/xenon is reduced to achieve the desired output power with each
  • the gas additive may be added to the gas mixture from a gas
  • container including a premix including the preferred xenon gas additive.
  • xenon gas can be obtained from xenon containing crystals that
  • xenon generator is filled with xenon-containing crystals and a heating
  • Argon may be used as the gas
  • Krypton may be used as the gas additive for an ArF
  • Argon and/or krypton may be used as the gas additive for a XeCI or
  • Argon, Krypton and/or Xenon may be used for a F 2 laser.
  • XeCI laser e.g., 0.1 % NO in Ne
  • FNO may be used for a XeCI or F 2 laser.
  • Another element or molecule such as a metal, e.g., W or Pt, may be
  • the metals may be added to one or more electrodes preferably of the
  • preionization unit or another metal component of the laser tube, if any.
  • candidate metals include chromium, and aluminum. Silicon, carbon,
  • STP standard temperature and pressure
  • oxides such as molecular combinations of oxygen and one or more of
  • chromium, fluorine or aluminum are other preferred candidate elements or
  • AIO AI 2 O
  • AI 2 O 2 AI 2 O 2
  • AIF AIF 2
  • Other possibilities include N, N 2 , N x , C, C 2 ,
  • the gas mixture may be added to the gas mixture, preferably in trace amounts, such as less than 500-1000 ppm, or less than 0.1 %, in accord with the present
  • gas additive may be added to the gas
  • One gas additive may be used to control
  • gas additives may be used to control another of the above parameters.
  • Fig. 1 illustrates energy overshoot, or spiking, for a laser operating in
  • Fig. 2 shows a xenon gas generator in accord with the present
  • Fig. 3a shows a pulse-to-pulse energy stability over a large number of
  • bursts of 240 pulses for a conventional KrF laser system bursts of 240 pulses for a conventional KrF laser system.
  • Fig. 3b shows the energy overshoot of a conventional burst mode
  • Fig. 4a shows a pulse-to-pulse energy stability over the same number
  • Fig. 4b shows the energy overshoot of a burst mode operation KrF
  • Fig. 5 shows the dependence on xenon concentration of the energy
  • Fig. 6a shows a measured dependence on xenon concentration
  • Fig. 6b shows a measured dependence on xenon concentration from 0
  • Fig. 6c shows a measured dependence on xenon concentration
  • Fig. 6d shows a measured dependence on xenon concentration from 0
  • Fig. 6e shows measured dependences of the output energy and energy
  • Fig. 7 shows a preferred embodiment of a KrF, ArF or F 2 laser system
  • working laser systems and are generally related to providing a gas additive
  • the laser operates in burst pattern operation, although the present invention
  • the invention may be applied to continuous output laser systems, as well.
  • the invention may be applied to continuous output laser systems, as well.
  • the present invention is particularly drawn to lasers operating at
  • high repetition rates such as 1 or 2 kHz pulse repetition frequency or higher.
  • a particular amount of xenon is initially
  • the laser tube depends on the type of laser being used and the result of adding the xenon that is desired. For example, the output energy of the laser
  • xenon may be added according to
  • the concentration of xenon is greater than 10 ppm, and is as
  • the laser system is unable to generate pulses at that specified energy.
  • pulser module and electrodes.
  • Those system components are preferably
  • xenon is added to the gas mixture, and then xenon is added to the gas
  • the pulse energy is at the desired value, and the energy stability and/or
  • overshoot is also at an improved, preferably selected, value.
  • the concentration of the preferred gas additive, i.e., xenon is more
  • the xenon concentration is imposed by limitations on the power supply
  • the xenon concentration upper limit can be raised.
  • xenon concentration is selected is a range between 1 00 and 500
  • the quality of the various laser components e.g., optical components in the
  • resonator such as prisms, gratings, etalons and windows, as well as the laser
  • the dynamic range of the operating voltage is however limited putting an
  • the system is initially configured to have an excess of
  • the operating range of voltages is above that typically required for generating output laser pulses at
  • bandwidth at 2 kHz repetition rate may be designed to deliver a maximum
  • additive such as xenon may be added to the gas mixture in selected amounts
  • the xenon concentration can also be adjusted between new fills
  • present invention for increasing component lifetimes is as follows. After a
  • the expert system including a
  • the gas additive concentration not only can be adjusted at a new fill
  • xenon is preferably integrated with the excimer or molecular fluorine laser
  • an internal xenon supply is provided with the laser system.
  • xenon is mixed in a premix with an inert
  • Excimer lasers of the usual type contain a gas mixture with a total
  • the buffer gas serves to transfer energy.
  • the rare gas which forms highly excited excimers
  • concentrations typically in the range of 1 to 9%.
  • halogen donor is typically 0.1 to 0.2%; particularly diatomic halogen
  • the molecular fluorine laser does not include an
  • the present invention is an excimer or molecular fluorine laser system
  • the laser tube is configured to receive injections with high accuracy
  • Means for stabilizing the optimum xenon partial pressure are also provided.
  • the xenon may be injected in pure form or as a constituent gas in a
  • premix including an amount of an inert gas such as Ar, Ne, He, or Kr.
  • an inert gas such as Ar, Ne, He, or Kr.
  • premix concentrations of xenon and buffer and/or other gases are particular premix concentrations of xenon and buffer and/or other gases.
  • the xenon gas supply be internal to the xenon gas supply
  • the xenon may alternatively be supplied from external
  • the xenon is injected in intervals and amounts determined based on an
  • expert system including a processor which receives monitored values of
  • the expert system generally describes two or more of these parameters.
  • replenishment is to be performed based on the monitored parameters.
  • laser emission may measured, and in burst operation the energy overshoot may be particularly measured as the first or first few pulses of bursts of
  • the amount of xenon in the laser gas mixture may be increased by
  • xenon is in the gas mixture.
  • control measurements of the laser parameters are repeated until the
  • the gas discharge chamber of the laser or is in physical relation to this
  • xenon is preferably
  • a xenon gas generator 20 comprises a small container 22
  • xenon containing crystals such as XeF 2 .
  • container 22 can be connected to the laser tubel by at least one gas line 23.
  • a valve or valves V1 , V3 can be used to separate the container 22 from the
  • a separate receptacle 26 maybe used wherein the dissociated
  • xenon and fluorine gases may be mixed prior to injection into the laser tube
  • Buffer gas can be used to flush the xenon fluorine mix into the laser tube
  • the receptacle 26 may be used for accurate
  • the receptacle 26 and use thereof may be similar to or the same one as that described for gas replenishment of the halogen and active
  • the container 22 is preferably equipped with a heating element 24 and
  • a temperature control device such as a conventional temperature controller
  • the container 22 is preferably heated to a preset temperature
  • XeF 2 would dissociate into xenon gas and F 2 gas.
  • the generated gas is then filled into the laser tube 1 , either directly or
  • xenon depends on the temperature applied to the solid xenon compound.
  • the xenon pressure or partial pressure can be adjusted by controlling
  • gas replacement can be automatically compensated by xenon release from
  • valve V1 is closed. A portion of the
  • laser gas is released from the laser tube 1 in the usual way (e.g., see U.S.
  • valve V1 is opened and the reduced xenon pressure is
  • the xenon or the xenon-containing substance can be injected directly
  • condensed xenon fluorides for instance XeF 2 , XeF 4 ,
  • laser is operated with a fluorine-containing gas mixture in which xenon or
  • xenon-containing compounds are present (e.g. XeF*).
  • XeF* xenon-containing compounds
  • molecular fluorine laser is prepared and operated in such way that it is
  • Fig. 3a shows a pulse-to-pulse energy stability over a large number of
  • bursts each including about 240 pulses for a KrF laser system without any
  • the KrF laser was operated at 2KHz and
  • Fig. 3a without a xenon additive is shown in Fig. 3a to vary from a minimum around
  • the stability is particularly poor over the first 70 pulses or so, where it fluctuates between 1 0% and 1 5%.
  • the stability settles into a range between about 7% and 1 2%.
  • Fig. 3b shows the energy overshoot of the laser of Fig. 3a as a
  • the pulse energies is finally reduced substantially to zero, i.e., the steady-
  • Fig. 4a shows a pulse-to-pulse energy stability as in Fig. 3a over a large number of bursts each including about 240 pulses for a laser system in
  • Fig. 4b shows the energy overshoot of a burst mode operation KrF
  • Fig. 4a is a significant improvement compared to the laser of Fig. 3a
  • burst overshoot defined as the average deviation of the first pulse in the
  • Fig. 5 shows the dependence of the energy overshoot on the xenon
  • Fig. 5 indicates a strong
  • excimer laser was operated at a repetition rate of 1 kHz.
  • Lambda Physik Litho/P was being used.
  • the total gas pressure was 3 bar
  • Fig. 6a shows a measured dependence on xenon concentration of the
  • Fig. 6b shows a measured dependence on xenon
  • Fig. 6c shows a measured dependence on xenon concentration
  • Fig. 6d shows a measured dependence on xenon
  • Fig. 6e illustrates the influence of xenon on the output energy
  • Fig. 6e shows that the xenon concentration which produces
  • the required high voltage is around 1 9.6 kV.
  • an ArF laser having a xenon
  • Fig. 7 shows various modules
  • VUV ultraviolet
  • the discharge chamber 1 contains a laser gas mixture and
  • main discharge electrodes 1 a, 1 b includes a pair of main discharge electrodes 1 a, 1 b and one or more
  • preionization electrodes (not shown).
  • Exemplary electrode configurations are
  • the laser resonator which surrounds the discharge chamber 1
  • containing the laser gas mixture includes a line narrowing module 2 for a line
  • line-narrowing module is to be installed into, there are many alternative line-
  • the discharge chamber is sealed by windows 8 transparent to the
  • a portion of the beam impinging the second beam splitter then reflects to a
  • fast energy detector 5 and the remainder traverses the beam splitter and is
  • outcoupled beam which traverses the beam splitter 6 is the output emission of the laser, which propagates toward an industrial or experimental
  • the preferred pulse power module and high voltage power supply are the preferred pulse power module and high voltage power supply.
  • a processor or control computer 1 1 receives and/or processes values
  • the processor 1 1 controls the gas supply unit which includes gas
  • xenon is internal to the laser system.
  • a gas for the ArF laser, a gas
  • gases of the system such as the halogen containing gas, the active rare gas
  • the ArF laser may have
  • the KrF laser may have an external supply of
  • xenon or another gas additive, or an internal supply of xenon.
  • the xenon or another gas additive, or an internal supply of xenon.
  • the system also includes means for
  • the gas compartment of the laser preferably contains a
  • the xenon source 1 3 is connected with gas
  • the standard gas mixture is supplied to the laser by external gas supply via
  • a new fill of the laser is controlled automatically by the control
  • the injection may be carried out in a preferred version of the invention
  • the xenon injection is
  • the present invention including the addition of xenon to the gas
  • moderate repetition rates e.g., well below 1 kHz such as from 1 to 300 or
  • discharge chamber 1 is improved by continuous refreshing of the gas in the
  • the pulse to pulse energy stability of the laser output radiation also satisfies the laser output radiation
  • the laser comprises an apparatus for supplying xenon to the laser gas
  • the present invention may also be used to calculate beam parameter specifications.
  • the present invention may also be used to calculate beam parameter specifications.
  • gas mixture of the excimer laser in this invention only refers to such fluorine-
  • the concentration may simply

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

L'invention concerne une laser excimère ou à fluor moléculaire (F2), tel qu'un laser KrF ou ArF, destiné en particulier à des applications photolithographiques, qui fonctionnent avec un mélange gazeux comprenant un additif gazeux à l'état de traces. La concentration de l'additif gazeux dans ledit mélange gazeux est optimisée pour que la stabilité de l'énergie et/ou la maîtrise du dépassement du faisceau de sortie laser soit améliorées. La concentration est en outre déterminée et réglée lors de nouveaux remplissage et/ou pendant le fonctionnement du laser, en fonction de son effet sur l'énergie pulsée de sortie, pour réduire les contraintes et/ou l'usure subies par le circuit de décharge et/ou d'autres composants du système laser. Une régulation d'atténuation sert également à augmenter la durée de vie du composant du système laser par régulation de la concentration de l'additif gazeux dans le temps. Une concentration spécifique préférée de xénon ne doit pas dépasser 100 ppm pour que la stabilité de l'énergie et/ou la maîtrise du dépassement soit améliorées. Le système laser selon l'invention peut être pourvu d'une unité d'alimentation en gaz interne comprenant un dispositif d'alimentation en xénon interne ou un générateur de xénon servant à fournir le xénon à partir de xénon condensé.
EP00971649A 1999-10-18 2000-10-16 Laser a gaz a energie stabilisee Withdrawn EP1147583A1 (fr)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US498121 1990-03-23
US16012699P 1999-10-18 1999-10-18
US160126P 1999-10-18
US09/484,818 US6243405B1 (en) 1999-03-17 2000-01-18 Very stable excimer or molecular fluorine laser
US484818 2000-01-18
US17862000P 2000-01-27 2000-01-27
US178620P 2000-01-27
US49812100A 2000-02-04 2000-02-04
US513025 2000-02-25
US09/513,025 US6714577B1 (en) 1999-03-17 2000-02-25 Energy stabilized gas discharge laser
PCT/IB2000/001627 WO2001029942A1 (fr) 1999-10-18 2000-10-16 Laser a gaz a energie stabilisee

Publications (1)

Publication Number Publication Date
EP1147583A1 true EP1147583A1 (fr) 2001-10-24

Family

ID=27538606

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00971649A Withdrawn EP1147583A1 (fr) 1999-10-18 2000-10-16 Laser a gaz a energie stabilisee

Country Status (3)

Country Link
EP (1) EP1147583A1 (fr)
JP (1) JP2004515903A (fr)
WO (1) WO2001029942A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6714577B1 (en) 1999-03-17 2004-03-30 Lambda Physik Ag Energy stabilized gas discharge laser
JP2007141941A (ja) * 2005-11-15 2007-06-07 Komatsu Ltd エキシマレーザ装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5307364A (en) * 1993-05-24 1994-04-26 Spectra Gases, Inc. Addition of oxygen to a gas mix for use in an excimer laser
US5307564A (en) * 1992-12-01 1994-05-03 Schoenberg Frederic D Safety razor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6014398A (en) * 1997-10-10 2000-01-11 Cymer, Inc. Narrow band excimer laser with gas additive

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5307564A (en) * 1992-12-01 1994-05-03 Schoenberg Frederic D Safety razor
US5307364A (en) * 1993-05-24 1994-04-26 Spectra Gases, Inc. Addition of oxygen to a gas mix for use in an excimer laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO0129942A1 *

Also Published As

Publication number Publication date
WO2001029942A1 (fr) 2001-04-26
JP2004515903A (ja) 2004-05-27

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