EP1145298A3 - Procede de production de diodes schottky - Google Patents

Procede de production de diodes schottky

Info

Publication number
EP1145298A3
EP1145298A3 EP99934481A EP99934481A EP1145298A3 EP 1145298 A3 EP1145298 A3 EP 1145298A3 EP 99934481 A EP99934481 A EP 99934481A EP 99934481 A EP99934481 A EP 99934481A EP 1145298 A3 EP1145298 A3 EP 1145298A3
Authority
EP
European Patent Office
Prior art keywords
schottky diodes
producing schottky
producing
diodes
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99934481A
Other languages
German (de)
English (en)
Other versions
EP1145298A2 (fr
Inventor
Reinhard Losehand
Hubert Werthmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1145298A2 publication Critical patent/EP1145298A2/fr
Publication of EP1145298A3 publication Critical patent/EP1145298A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
EP99934481A 1998-05-26 1999-05-11 Procede de production de diodes schottky Withdrawn EP1145298A3 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19823482 1998-05-26
DE19823482 1998-05-26
PCT/DE1999/001429 WO1999062113A2 (fr) 1998-05-26 1999-05-11 Procede de production de diodes schottky

Publications (2)

Publication Number Publication Date
EP1145298A2 EP1145298A2 (fr) 2001-10-17
EP1145298A3 true EP1145298A3 (fr) 2002-11-20

Family

ID=7868961

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99934481A Withdrawn EP1145298A3 (fr) 1998-05-26 1999-05-11 Procede de production de diodes schottky

Country Status (4)

Country Link
US (1) US6551911B1 (fr)
EP (1) EP1145298A3 (fr)
JP (1) JP2003514371A (fr)
WO (1) WO1999062113A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107719A (en) * 1975-02-19 1978-08-15 Siemens Aktiengesellschaft Inverse planar transistor
US4414737A (en) 1981-01-30 1983-11-15 Tokyo Shibaura Denki Kabushiki Kaisha Production of Schottky barrier diode
US4796069A (en) * 1981-05-13 1989-01-03 International Business Machines Corporation Schottky diode having limited area self-aligned guard ring and method for making same
US4691435A (en) * 1981-05-13 1987-09-08 International Business Machines Corporation Method for making Schottky diode having limited area self-aligned guard ring
JPS60157268A (ja) * 1984-01-26 1985-08-17 Rohm Co Ltd シヨツトキバリアダイオ−ド
US4835580A (en) * 1987-04-30 1989-05-30 Texas Instruments Incorporated Schottky barrier diode and method
JPH0618276B2 (ja) * 1988-11-11 1994-03-09 サンケン電気株式会社 半導体装置
CA2008176A1 (fr) 1989-01-25 1990-07-25 John W. Palmour Diode de schottky au carbure de silicium et methode de fabrication de cette diode
WO1991004581A1 (fr) * 1989-09-21 1991-04-04 Unisearch Limited Barriere de garde pour dispositif a barriere de schottky
JP2809826B2 (ja) * 1990-06-29 1998-10-15 三菱電機株式会社 半導体装置の製造方法
EP1090418B1 (fr) * 1998-05-26 2008-07-09 Infineon Technologies AG Procede de production de diodes schottky
US6066884A (en) * 1999-03-19 2000-05-23 Lucent Technologies Inc. Schottky diode guard ring structures

Also Published As

Publication number Publication date
WO1999062113A3 (fr) 2002-10-03
JP2003514371A (ja) 2003-04-15
EP1145298A2 (fr) 2001-10-17
WO1999062113A2 (fr) 1999-12-02
US6551911B1 (en) 2003-04-22

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