EP1080393A1 - Method for measuring the position of structures on a surface of a mask - Google Patents

Method for measuring the position of structures on a surface of a mask

Info

Publication number
EP1080393A1
EP1080393A1 EP99917765A EP99917765A EP1080393A1 EP 1080393 A1 EP1080393 A1 EP 1080393A1 EP 99917765 A EP99917765 A EP 99917765A EP 99917765 A EP99917765 A EP 99917765A EP 1080393 A1 EP1080393 A1 EP 1080393A1
Authority
EP
European Patent Office
Prior art keywords
mask
structures
measuring
outer edges
coordinate system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99917765A
Other languages
German (de)
French (fr)
Inventor
Carola BLÄSING-BANGERT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Tencor MIE GmbH
Original Assignee
Leica Microsystems Wetzlar GmbH
Leica Microsystems CMS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7865274&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP1080393(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Leica Microsystems Wetzlar GmbH, Leica Microsystems CMS GmbH filed Critical Leica Microsystems Wetzlar GmbH
Publication of EP1080393A1 publication Critical patent/EP1080393A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes

Definitions

  • the invention relates to a method for measuring the position of structures on a mask surface, in which the mask is stored in an image-evaluating coordinate measuring device on a measuring table that can be measured interferometrically, perpendicular to the optical axis of an imaging measuring system, and a mask coordinate system assigned to the mask is relatively aligned via alignment marks is aligned to a measuring device coordinate system and the target position of the structures in the mask coordinate system is predetermined
  • a measuring device for carrying out such a method is described in the lecture manisk ⁇ pt “Pattern Placement Metrology for Mask Making, Dr C Blasmg, Semicon Geneva, Education Program, issued on 31 3 1998, with its basic elements.
  • the measuring device is used in particular for quality control of masks for semiconductor production
  • the quality of the mask is becoming increasingly critical in chip production.
  • the specifications for the position of the structures (patterns) from one mask to another are becoming ever narrower.
  • the measuring device described in the lecture manuscript can position the structures relative to defined alignment marks that the mask Define coordinate system, measure with an accuracy of typically better than 10 nm With the help of these alignment marks, the masks in the stepper can be aligned for the projection onto wafer surfaces.
  • the steppers only have a certain area around which the mask can be moved and rotated for physical alignment.
  • centrality With specifications becoming ever tighter on all components, the position of the structures relative to the outer edge of the mask is becoming an important quality feature of the mask.
  • the position of the structures relative to the outer edges is referred to as "centrality” or “pattern centrality”.
  • the mask is usually applied at three points in the lithography device (e.g. e-beam or laser lithography) in order to obtain a reproduced position.
  • lithography device e.g. e-beam or laser lithography
  • Two outer edges are defined with the three points, it being assumed that these are at right angles to one another. These two edges form a reference for the pattern created by the structures.
  • the invention was therefore based on the object of specifying a measuring method with which the “pattern centrality” can be determined with greater accuracy, increased speed and with a reduced risk of damage
  • This object is achieved according to the invention with a method of the type mentioned at the outset in that, in addition to the actual position of the structures in the mask coordinate system, the position of at least two outer edges of the mask which are perpendicular to one another is also measured in the mask coordinate system Outer edge in one coordinate axis is determined from the value of the edge position measured by image evaluation and in the other coordinate axis is determined by the current measuring table position. If two position values are determined for one outer edge and at least one position value for the other outer edge, two reference angles can be assumed, assuming the outer edges are at right angles to each other for determining the "centrality" can also advantageously be measured the position of the other edges, so that a check of the tolerances in the mask plate dimensions is possible and the alignment of the structures in the mask sheet he can be determined in relation to the true mask center
  • an image of the outer edge of the mask can be stored in the measuring device and an edge position to be measured can be set in an automatic search run of the measuring table.
  • the position of the outer edge is expediently measured uses imaging optics with a low aperture. If the measuring table surface is then designed to be reflective for the imaging rays of the measuring device at least in the area of the outer edges of the mask, the edge is illuminated in the reflected light and a sufficient light intensity reaches the measuring system.
  • selected structure elements can be provided on the mask, the position of which is determined in the mask coordinate system and relative to the outer edges of the mask.
  • the position of all measured structures can also be relative to the Outer edges are determined without special "centrality marks" being provided.
  • the distance to the outer edges of the mask can be determined both for the selected structural elements and for the other measured structures.
  • Fig. 2 shows a mask with two centrality marks
  • Fig. 3 shows a typical design of the mask edge in cross section
  • Fig. 4 shows a typical image of a mask edge.
  • FIG. 1 shows an example of a mask layout.
  • the mask plate shown contains the mask structures (reticle) generated in a lithography system. Alignment marks are applied in the free area. Two outer edges of the mask plate should be at right angles to each other. These edges are at three points. The dashed lines form the reference for the pattern centrality.
  • FIG. 2 shows a mask plate with separately applied centrality marks. The distances to the two outer edges serving as reference are indicated by arrows
  • edges 3 shows a cross section of a mask plate in the edge region.
  • the edges are typically chamfered, the specified distance A usually being able to vary between 0.2 and 0.6 mm
  • the mask is loaded onto the measuring table in the coordinate measuring system.
  • An alignment is then first carried out, with which the mask is aligned with the coordinate system of the measuring device and the mask coordinate system is defined.
  • the outer edges of the mask are measured
  • the measuring table is moved to the position at which the edge is to be measured.
  • the background of the mask should reflect well at this point, so that sufficient light from this background reaches the image-evaluating camera of the measuring device via imaging optics with a small aperture
  • Such an image is shown
  • the area outside the mask can be seen as a bright area
  • the edge itself is definitely very dark, because due to the bevel, the incident light rays are reflected out of the aperture area of the imaging lens
  • the mask surface then reflects light back into the lens
  • the brightness depends on the mask type. Due to the typical brightness distribution on the outer edge of the mask plate, this image can also be saved and used for image recognition in an automatic search for the measuring table. If the table has its predefined or automatically found one
  • the exact position of the edge is measured.
  • the edge measurement is carried out using an image analysis method within the measurement window shown. The accuracy of the measurement depends on the resolution of the image recording system (CCD camera).
  • CCD camera image recording system
  • the position of the centrality marks is measured. For example, two opposite edges of the mark are measured and the center line is determined. The intersection of two perpendicular center lines determines the position
  • the values determined for the edge positions and the positions of the measured centrality structures are also stored in a measurement data file and are therefore available for further evaluations. However, a separate data file can also be set up for the centrality evaluation
  • the further evaluation can be carried out customer-specifically.
  • the evaluation can consist, among other things, of calculating the distances between the structures relative to the edges advantageous if the position of all outer edges is known, in particular the outer dimensions of the mask plate can also be checked.
  • the described method not only extends the area of application of the measuring device known per se. This also enables a new design of the mask structures, because with higher occupancy of the mask area with structures, centrality marks can be inserted at any point or selected structures from the regular mask structure can also be defined as centrality marks, which are used as such with conventional measurement methods would not be evaluable.

Abstract

The invention relates to a method for measuring structures on a surface of a mask in which the mask is mounted in an image evaluating coordinate measuring device on a measuring table. Said measuring table can be perpendicularly displaced in relation to the optical axis of an imaging measuring system in a manner which is interferometrically measurable. In addition, a mask coordinate system which is assigned to the mask is aligned in relation to a measuring device coordinate system by using alignment marks. The specified position of the structures is predetermined in the mask coordinate system. In addition to the actual position of the structures in the mask coordinate system, the position of at least two outer edges of the mask which are perpendicular to one another is also measured in the mask coordinate system.

Description

Verfahren zur Messung der Lage von Strukturen auf einer Maskenoberfläche Method for measuring the position of structures on a mask surface
Die Erfindung betrifft ein Verfahren zur Messung der Lage von Strukturen auf einer Maskenoberflache, bei dem die Maske in einem bildauswertenden Koordinaten-Meßgerät auf einem senkrecht zur optischen Achse eines abbildenden Meßsystems interferometπsch meßbar verschiebbaren Meßtisch gelagert und ein der Maske zugeordnetes Masken-Koordinatensystem über Ausrichtemarken relativ zu einem Meßgeräte-Koordinatensystem ausgerichtet wird und wobei die Soll-Lage der Strukturen in dem Masken- Koordinatensystem vorgegeben istThe invention relates to a method for measuring the position of structures on a mask surface, in which the mask is stored in an image-evaluating coordinate measuring device on a measuring table that can be measured interferometrically, perpendicular to the optical axis of an imaging measuring system, and a mask coordinate system assigned to the mask is relatively aligned via alignment marks is aligned to a measuring device coordinate system and the target position of the structures in the mask coordinate system is predetermined
Ein Meßgerat zur Durchfuhrung eines solchen Verfahrens ist in dem Vortragsmaniskπpt „Pattern Placement Metrology for Mask Making, Dr C Blasmg, Semicon Genf, Education Program, ausgegeben am 31 3 1998, mit seinen Grundelementen beschrieben Das Meßgerat dient insbesondere der Qualitätskontrolle von Masken für die Halbleiterherstellung Die Qualität der Maske wird in der Chip-Produktion immer kritischer Die Spezifikationen für die Lage der Strukturen (Pattern) von einer Maske zur anderen werden immer enger Das in dem Vortragsmanuskript beschriebene Meßgerat kann die Lage der Strukturen relativ zu definierten Ausrichtemarken, die das Masken- Koordinatensystem definieren, mit einer Genauigkeit von typischerweise besser als 10 nm messen Mit Hilfe dieser Ausrichtemarken können die Masken im Stepper für die Projektion auf Waferoberflachen ausgerichtet werden Fehler, die hierbei gemacht werden, gehen direkt in das Fehlerbudget des Lithografie-Prozesses ein Die Maske wird im Stepper so ausgerichtet, daß bei der Belichtung die jeweiligen Ausrichtemarken genau übereinander liegen. Die Stepper haben allerdings nur einen gewissen Bereich, um den die Maske zur physikalischen Ausrichtung verschoben und rotiert werden kann.A measuring device for carrying out such a method is described in the lecture maniskπpt “Pattern Placement Metrology for Mask Making, Dr C Blasmg, Semicon Geneva, Education Program, issued on 31 3 1998, with its basic elements. The measuring device is used in particular for quality control of masks for semiconductor production The quality of the mask is becoming increasingly critical in chip production. The specifications for the position of the structures (patterns) from one mask to another are becoming ever narrower. The measuring device described in the lecture manuscript can position the structures relative to defined alignment marks that the mask Define coordinate system, measure with an accuracy of typically better than 10 nm With the help of these alignment marks, the masks in the stepper can be aligned for the projection onto wafer surfaces. Errors that are made here go directly into the error budget of the lithography process Stepper s o Aligned so that the respective alignment marks are accurate during exposure lie on top of each other. However, the steppers only have a certain area around which the mask can be moved and rotated for physical alignment.
Mit immer enger werdenden Spezifikationen an alle Komponenten wird auch die Lage der Strukturen relativ zur Außenkante der Maske ein wichtiges Qualitätsmerkmal der Maske. Die Lage der Strukturen relativ zu den Außenkanten wird als „Centrality" oder auch „Pattern Centrality" bezeichnet.With specifications becoming ever tighter on all components, the position of the structures relative to the outer edge of the mask is becoming an important quality feature of the mask. The position of the structures relative to the outer edges is referred to as "centrality" or "pattern centrality".
Die Maske wird im Lithografie-Gerät (z.B. E-beam oder Laserlithografie) üblicherweise an drei Punkten angelegt, um eine reproduzierte Lage zu erhalten. Mit den drei Punkten sind zwei Außenkanten festgelegt, wobei davon ausgegangen wird, daß diese im rechten Winkel zueinander stehen. Diese beiden Kanten bilden eine Referenz für das von den Strukturen erzeugte Muster.The mask is usually applied at three points in the lithography device (e.g. e-beam or laser lithography) in order to obtain a reproduced position. Two outer edges are defined with the three points, it being assumed that these are at right angles to one another. These two edges form a reference for the pattern created by the structures.
Bisher war „PatternCentrality" nicht von großer Bedeutung. Die Toleranzen in den Stepperhalterungen für die Masken waren so groß, daß die Genauigkeit der Masken-Lithografiesysteme auch ohne weitere Messungen die Spezifikationen erfüllt haben. Zur Prozeßkontrolle werden bisher nur Stichproben gemessen. Dazu werden normale Mikroskope benutzt, die so umgebaut sind, daß sie die gleichen Anlagepunkte haben wie die Lithografiesysteme. Die Maske wird dann vom Operator manuell auf den Tisch des Mikroskopes gelegt. Es werden spezielle „Centrality Marken" auf die Maske geschrieben, die dann manuell unter dem Mikroskop in Bezug auf die Anlagekanten vermessen werden. Solange die Abstände zu den Kanten in einem vorgegebenen Toleranzbereich bleiben, ist eine ausreichende Ausrichtung der Maske im Stepper mit Hilfe der Aus richte marken gewährleistet. Die Genauigkeitsanfordungen an die Messung sind nicht sehr hoch.So far, "PatternCentrality" was not of great importance. The tolerances in the stepper mounts for the masks were so large that the accuracy of the mask lithography systems met the specifications even without further measurements. So far, only random samples have been measured for process control. Normal microscopes are used for this The mask is then manually placed on the microscope table by the operator. Special "centrality marks" are written on the mask, which are then manually placed under the microscope Be measured with reference to the system edges. As long as the distances to the edges remain within a specified tolerance range, sufficient alignment of the mask in the stepper is guaranteed with the help of the alignment marks. The accuracy requirements for the measurement are not very high.
Mit jeder neuen Chipgeneration werden aber die Anforderungen an die Genauigkeit und den Meßdurchsatz immer größer. Die Genauigkeit, die mit der manuellen Messung mit einem herkömmlichen Mikroskop erreicht werden kann, reicht nicht mehr aus Zudem wird mit der manuellen Messung zu viel Zeit für die Ausrichtung im Meßgerat, das Auffinden der Strukturen und die eigentliche Messung aufgewendet Außerdem muß die Maske für jede Messung in einem separaten Meßgerat zunächst aus einer Transportbox entnommen und nach der Messung wieder sorgfaltig in dieser verpackt werden Jeder Handlingvorgang erhöht die Gefahr einer Verschmutzung und der Beschädigung der MaskeWith each new generation of chips, however, the requirements for accuracy and measurement throughput are increasing. The accuracy achieved with manual measurement using a conventional microscope can, is no longer sufficient In addition, manual measurement takes too much time for alignment in the measuring device, finding the structures and the actual measurement.For each measurement, the mask must first be removed from a transport box in a separate measuring device and after the measurement be carefully packaged in it again Each handling process increases the risk of contamination and damage to the mask
Der Erfindung lag daher die Aufgabe zugrunde, ein Meßverfahren anzugeben, mit dem die „Pattern Centrality" mit höherer Genauigkeit, gesteigerter Geschwindigkeit und bei verringerter Beschadigungsgefahr bestimmt werden kannThe invention was therefore based on the object of specifying a measuring method with which the “pattern centrality” can be determined with greater accuracy, increased speed and with a reduced risk of damage
Diese Aufgabe wird erfindungsgemaß mit einem Verfahren der eingangs genannten Art dadurch gelost, daß zusätzlich zur Ist-Lage der Strukturen im Masken-Koordinatensystem auch die Lage von mindestens zwei senkrecht zueinander stehenden Außenkanten der Maske im Masken- Koordinatensystem gemessen wird Dabei wird vorteilhafterweise die Lage der Außenkante in einer Koordinatenachse aus dem durch Bildauswertung gemessenen Wert der Kantenposition und in der anderen Koordinatenachse durch die aktuelle Meßtischposition bestimmt Wenn zu einer Außenkante zwei Lagewerte und zu der anderen Außenkante mindestens ein Lagewert bestimmt wird, können unter der Annahme der rechtwinklig zueinander stehenden Außenkanten zwei Referenzhnien für die Ermittlung der „Centrality" bestimmt werden Mit Vorteil kann auch die Lage der weiteren Kanten gemessen werden, so daß eine Überprüfung der Toleranzen in den Maskenplatten-Abmessungen möglich ist und die Ausrichtung der Strukturen in der Maskenflache in Bezug auf das wahre Maskenzentrum bestimmbar istThis object is achieved according to the invention with a method of the type mentioned at the outset in that, in addition to the actual position of the structures in the mask coordinate system, the position of at least two outer edges of the mask which are perpendicular to one another is also measured in the mask coordinate system Outer edge in one coordinate axis is determined from the value of the edge position measured by image evaluation and in the other coordinate axis is determined by the current measuring table position.If two position values are determined for one outer edge and at least one position value for the other outer edge, two reference angles can be assumed, assuming the outer edges are at right angles to each other for determining the "centrality" can also advantageously be measured the position of the other edges, so that a check of the tolerances in the mask plate dimensions is possible and the alignment of the structures in the mask sheet he can be determined in relation to the true mask center
Da das Verfahren ein bildauswertendes Meßsystem verwendet, kann ein Bild der Außenkante der Maske im Meßgerat gespeichert und eine zu messende Kantenposition in einem automatischen Suchlauf des Meßtisches eingestellt werden Zur Messung der Lage der Außenkante wird zweckmaßigerweise eine Abbildungsoptik mit niedriger Apertur verwendet. Wenn dann die Meßtisch-Oberfläche zumindest im Bereich der Außenkanten der aufliegenden Maske für die Abbildungsstrahlen des Meßgerätes reflektierend ausgebildet ist, wird die Kante im reflektierten Licht beleuchtet und es gelangt eine ausreichende Lichtintensität in das Meßsystem.Since the method uses an image-evaluating measuring system, an image of the outer edge of the mask can be stored in the measuring device and an edge position to be measured can be set in an automatic search run of the measuring table. The position of the outer edge is expediently measured uses imaging optics with a low aperture. If the measuring table surface is then designed to be reflective for the imaging rays of the measuring device at least in the area of the outer edges of the mask, the edge is illuminated in the reflected light and a sufficient light intensity reaches the measuring system.
In Anlehnung an das herkömmliche Verfahren zur Bestimmung der „Pattern Centrality" können auf der Maske ausgewählte Strukturelemente vorgesehen werden, deren Lage im Masken-Koordinatensystem und relativ zu den Außenkanten der Maske ermittelt wird. Es kann aber auch die Lage aller gemessenen Strukturen relativ zu den Außenkanten ermittelt werden, ohne daß besondere „Centrality-Marken" vorgesehen werden.Based on the conventional method for determining the "pattern centrality", selected structure elements can be provided on the mask, the position of which is determined in the mask coordinate system and relative to the outer edges of the mask. However, the position of all measured structures can also be relative to the Outer edges are determined without special "centrality marks" being provided.
Anstelle der Lage-Koordinaten kann sowohl für die ausgewählten Strukturelemente als auch für die anderen gemessenen Strukturen der Abstand zu den Außenkanten der Maske ermittelt werden. Anhand der Zeichnung wird ein Ausführungsbeispiel des erfindungsgemäßen Verfahrens schematisch beschrieben. Dabei zeigtInstead of the position coordinates, the distance to the outer edges of the mask can be determined both for the selected structural elements and for the other measured structures. An exemplary embodiment of the method according to the invention is described schematically with the aid of the drawing. It shows
Fig. 1 ein übliches Maskenlayout mit Anlagepunkten in einem Lithografiesystem,1 shows a conventional mask layout with contact points in a lithography system,
Fig. 2 eine Maske mit zwei Centrality-Marken, Fig. 3 eine typische Ausbildung der Maskenkante im Querschnitt undFig. 2 shows a mask with two centrality marks, Fig. 3 shows a typical design of the mask edge in cross section and
Fig. 4 ein typisches Bild einer Maskenkante.Fig. 4 shows a typical image of a mask edge.
Fig. 1 zeigt ein Beispiel für ein Maskenlayout. Die dargestellte Maskenplatte enthält in einem zentralen Bereich die in einem Lithografiesystem erzeugten Maskenstrukturen (Reticle). In dem freien Bereich sind Ausrichtemarken aufgebracht. Zwei Außenkanten der Maskenplatte sollen im rechten Winkel zueinander stehen. Diese Kanten liegen an drei Punkten an. Die gestrichelten Linien bilden die Referenz für die Pattern Centrality. Fig 2 zeigt eine Maskenplatte mit gesondert aufgebrachten Centrality- Marken Die Abstände zu den beiden als Referenz dienenden Außenkanten sind durch Pfeile angedeutet1 shows an example of a mask layout. In a central area, the mask plate shown contains the mask structures (reticle) generated in a lithography system. Alignment marks are applied in the free area. Two outer edges of the mask plate should be at right angles to each other. These edges are at three points. The dashed lines form the reference for the pattern centrality. FIG. 2 shows a mask plate with separately applied centrality marks. The distances to the two outer edges serving as reference are indicated by arrows
In Fig 3 ist eine Maskenplatte im Kantenbereich im Querschnitt dargestellt Die Kanten sind in typischer Weise angeschragt, wobei der angegebene Abstand A üblicherweise zwischen 0,2 und 0,6 mm variieren kann3 shows a cross section of a mask plate in the edge region. The edges are typically chamfered, the specified distance A usually being able to vary between 0.2 and 0.6 mm
Zur Durchfuhrung des Verfahrens wird die Maske in dem Koordinaten- Meßsystem auf den Meßtisch geladen Danach wird zunächst ein Alignment durchgeführt, mit dem die Maske zum Koordinatensystem des Meßgerätes ausgerichtet und das Masken-Koordinatensystem definiert wird Im nächsten Schritt werden die Außenkanten der Maske vermessenTo carry out the method, the mask is loaded onto the measuring table in the coordinate measuring system. An alignment is then first carried out, with which the mask is aligned with the coordinate system of the measuring device and the mask coordinate system is defined. In the next step, the outer edges of the mask are measured
Dazu wird der Meßtisch an die Position gefahren, an der die Kante gemessen werden soll Der Hintergrund der Maske soll an dieser Stelle gut reflektieren, so daß über eine Abbildungsoptik mit geringer Apertur noch genügend Licht von diesem Hintergrund zur bildauswertenden Kamera des Meßgerätes gelangt In Fig 4 ist ein solches Bild dargestellt Der Bereich außerhalb der Maske ist als helle Flache zu erkennen Die Kante selbst ist auf jeden Fall sehr dunkel, da wegen der Abschragung die auftreffenden Lichtstrahlen aus dem Aperturbereich des abbildenden Objektivs herausreflektiert werden Die Maskenoberflache reflektiert dann wieder Licht in das Objektiv Die Helligkeit hangt vom Maskentyp ab Aufgrund der typischen Helligkeitsverteilung an der Außenkante der Maskenplatte kann dieses Bild auch abgespeichert und zur Bilderkennung in einem automatischen Suchlauf für den Meßtisch verwendet werden Hat der Tisch seine vorgegebene oder seine automatisch gefundeneFor this purpose, the measuring table is moved to the position at which the edge is to be measured. The background of the mask should reflect well at this point, so that sufficient light from this background reaches the image-evaluating camera of the measuring device via imaging optics with a small aperture Such an image is shown The area outside the mask can be seen as a bright area The edge itself is definitely very dark, because due to the bevel, the incident light rays are reflected out of the aperture area of the imaging lens The mask surface then reflects light back into the lens The brightness depends on the mask type. Due to the typical brightness distribution on the outer edge of the mask plate, this image can also be saved and used for image recognition in an automatic search for the measuring table. If the table has its predefined or automatically found one
Meßposition erreicht, wird die genaue Position der Kante gemessen Die Kantenmessung erfolgt mit Hilfe eines Bildanalyseverfahrens innerhalb des dargestellten Meßfensters Die Genauigkeit der Messung hangt von der Auflosung des Bildaufnahmesystems (CCD-Kamera) ab Als Kantenposition wird in einer Koordinatenachse der gemessene Wert der Kantenposition und in der anderen Koordinatenachse die aktuelle, interferometπsch gemessene Tischposition abgespeichertIf the measuring position is reached, the exact position of the edge is measured. The edge measurement is carried out using an image analysis method within the measurement window shown. The accuracy of the measurement depends on the resolution of the image recording system (CCD camera). The measured value of the edge position and the current, interferometrically measured table position is stored in the other coordinate axis
Auf diese Weise werden mindestens drei Punkte auf zwei Außenkanten der Maskenplatte gemessen, die unter einem rechten Winkel zueinander stehen Selbstverständlich ist es auch möglich, ergänzend die Lage aller Außenkanten zu messenIn this way, at least three points are measured on two outer edges of the mask plate, which are at a right angle to one another. Of course, it is also possible to additionally measure the position of all outer edges
Im nächsten Schritt wird die Lage der Centrality-Marken gemessen Dazu werden jeweils z B zwei einander gegenüberliegende Kanten der Marke gemessen und die Mittellinie dazu bestimmt Der Schnittpunkt von zwei senkrecht zueinander stehenden Mittellinien bestimmt die LageIn the next step, the position of the centrality marks is measured. For example, two opposite edges of the mark are measured and the center line is determined. The intersection of two perpendicular center lines determines the position
(Koordinatenposition) der Marke Diese Marken unterscheiden sich in ihrer Struktur nicht von Ausπchtemarken oder üblichen Meßstrukturen Jede Struktur, die normalerweise gemessen werden kann, kann daher in dem erfindungsgemaßen Verfahren auch als Centrality-Marke verwendet werden Es können somit beliebig viele Strukturen als Centrality-Marken definiert werden Die Designpositionen (Soll-Lage), die Meßpositionen und die Anzahl der Marken können kundenspezifisch für jeden Meßvorgang definiert werden(Coordinate position) of the mark These marks do not differ in structure from non-conform marks or conventional measurement structures. Any structure that can normally be measured can therefore also be used as a centrality mark in the method according to the invention. Any number of structures can thus be used as centrality marks The design positions (target position), the measuring positions and the number of marks can be defined customer-specifically for each measuring process
Die ermittelten Werte für die Kantenpositionen und die Positionen der gemessenen Centrality-Strukturen werden in einem Meßdatenfile mit abgespeichert und stehen somit für weitere Auswertungen zur Verfugung Es kann aber auch ein separater Datenfile für die Centrality-Auswertung eingerichtet werdenThe values determined for the edge positions and the positions of the measured centrality structures are also stored in a measurement data file and are therefore available for further evaluations. However, a separate data file can also be set up for the centrality evaluation
Mit einer geeigneten Auswertesoftware kann die weitere Auswertung kundenspezifisch durchgeführt werden Die Auswertung kann unter anderem darin bestehen, die Abstände der Strukturen relativ zu den Kanten zu berechnen Es können aber auch Schwerpunktverschiebungen, Rotationen, Orthogonalitat etc der Meßstrukturen relativ zu den Außenkanten ausgewertet werden Dazu ist es vorteilhaft, wenn die Lage aller Außenkanten bekannt ist, insbesondere werden damit auch die äußeren Abmessungen der Maskenplatte überprüfbar Mit dem beschriebenen Verfahren wird nicht nur der Anwendungsbereich des an sich bekannten Meßgerätes erweitert. Es wird dadurch auch eine neue Gestaltung der Maskenstrukturen ermöglicht, denn bei höherer Belegung der Maskenfläche mit Strukturen können an beliebiger Stelle Centrality-Marken eingefügt oder es können auch ausgewählte Strukturen aus der regulären Maskenstruktur als Centrality-Marken definiert werden, die mit herkömmlichen Meßmethoden als solche nicht auswertbar wären. With a suitable evaluation software, the further evaluation can be carried out customer-specifically. The evaluation can consist, among other things, of calculating the distances between the structures relative to the edges advantageous if the position of all outer edges is known, in particular the outer dimensions of the mask plate can also be checked The described method not only extends the area of application of the measuring device known per se. This also enables a new design of the mask structures, because with higher occupancy of the mask area with structures, centrality marks can be inserted at any point or selected structures from the regular mask structure can also be defined as centrality marks, which are used as such with conventional measurement methods would not be evaluable.

Claims

Patentansprücheclaims
1 ) Verfahren zur Messung von Strukturen auf einer Maskenoberfläche, bei dem die Maske in einem bildauswertenden Koordinatenmeßgerät auf einem senkrecht zur optischen Achse eines abbildenden Meßsystems interferometrisch meßbar verschiebbaren Meßtisch gelagert und ein der1) Method for measuring structures on a mask surface, in which the mask is stored in an image-evaluating coordinate measuring device on a measuring table which can be moved interferometrically and measured perpendicular to the optical axis of an imaging measuring system, and one of the
Maske zugeordnetes Masken-Koordinatensystem über Ausrichtemarken relativ zu einem Meßgeräte-Koordinatensystem ausgerichtet wird und wobei die Soll-Lage der Strukturen in dem Masken-Koordinatensystem vorgegeben ist, dadurch gekennzeichnet, daß zusätzlich zur Ist-Lage der Strukturen im Masken-Koordinatensystem auch die Lage von mindestens zwei senkrecht zueinander stehenden Außenkanten der Maske im Masken-Koordinatensystem gemessen wird.Mask-assigned mask coordinate system is aligned via alignment marks relative to a measuring device coordinate system and the target position of the structures in the mask coordinate system is predetermined, characterized in that in addition to the actual position of the structures in the mask coordinate system, the position of at least two mutually perpendicular outer edges of the mask are measured in the mask coordinate system.
2) Verfahren nach Anspruch 1 , dadurch gekennzeichnet, daß die Lage der Außenkante in einer Koordinatenachse aus dem durch Bildauswertung gemessenen Wert der Kantenposition und in der anderen2) Method according to claim 1, characterized in that the position of the outer edge in a coordinate axis from the value of the edge position measured by image evaluation and in the other
Koordinatenachse durch die aktuelle Meßtischposition bestimmt ist.Coordinate axis is determined by the current measuring table position.
3) Verfahren nach Anspruch 2, dadurch gekennzeichnet, daß zu einer Außenkante zwei Lagewerte und zu den anderen Außenkanten mindestens ein Lagewert bestimmt wird. 4) Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß ein Bild der Außenkante im Koordinatenmeßgerät gespeichert und eine zu messende Kantenposition in einem automatischen Suchlauf des Meßtisches eingestellt wird. 5) Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Messung der Lage der Außenkante mit einer Abbildungsoptik mit niedriger Apertur durchgeführt wird3) Method according to claim 2, characterized in that two position values are determined for an outer edge and at least one position value is determined for the other outer edges. 4) Method according to one of the preceding claims, characterized in that an image of the outer edge is stored in the coordinate measuring machine and an edge position to be measured is set in an automatic search run of the measuring table. 5) Method according to one of the preceding claims, characterized in that the measurement of the position of the outer edge is carried out with imaging optics with a low aperture
6) Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß die Meßtisch-Oberfläche zumindest im Bereich der6) Method according to one of the preceding claims, characterized in that the measuring table surface at least in the area of
Außenkanten der aufliegenden Maske für die Abbildungsstrahlen des Meßgerätes reflektierend ausgebildet istOuter edges of the overlying mask is reflective for the imaging beams of the measuring device
7) Verfahren nach Anspruch 1 , dadurch gekennzeichnet, daß auf der Maske ausgewählte Strukturelemente vorgesehen werden, deren Lage im Masken-Koordinatensystem und relativ zu den Außenkanten der Maske ermittelt wird7) Method according to claim 1, characterized in that selected structure elements are provided on the mask, the position of which is determined in the mask coordinate system and relative to the outer edges of the mask
8) Verfahren nach Anspruch 1 , dadurch gekennzeichnet, daß die Lage von beliebigen gemessenen Strukturen auch relativ zu den Außenkanten der Maske ermittelt wird 9) Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß der Abstand der ausgewählten Strukturelemente zu den beiden Außenkanten der Maske ermittelt wird8) Method according to claim 1, characterized in that the position of any measured structures is also determined relative to the outer edges of the mask. 9) Method according to claim 7, characterized in that the distance between the selected structural elements and the two outer edges of the mask is determined
10) Verfahren nach Anspruch 8, dadurch gekennzeichnet, daß der Abstand der beliebigen gemessenen Strukturen zu den beiden Außenkanten der Maske ermittelt wird10) Method according to claim 8, characterized in that the distance between the arbitrary measured structures to the two outer edges of the mask is determined
1 1 ) Verfahren nach Anspruch 1 , dadurch gekennzeichnet, daß aus abgespeicherten Lagekoordinaten der Strukturen und der Kantenpositionen unterschiedliche Auswertungen, wie z B Schwerpunktverschiebungen, Rotationen oder die Orthogonalitat des Strukturmusters relativ zu den Außenkanten der Maske, durchgeführt werden 1 1) Method according to claim 1, characterized in that from the stored position coordinates of the structures and the edge positions different evaluations, such as shifts in the center of gravity, rotations or the orthogonality of the structure pattern relative to the outer edges of the mask, are carried out
EP99917765A 1998-04-21 1999-03-03 Method for measuring the position of structures on a surface of a mask Withdrawn EP1080393A1 (en)

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DE19817714 1998-04-21
DE19817714A DE19817714C5 (en) 1998-04-21 1998-04-21 Method for measuring the position of structures on a mask surface
PCT/DE1999/000566 WO1999054785A1 (en) 1998-04-21 1999-03-03 Method for measuring the position of structures on a surface of a mask

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6948007B2 (en) * 2001-12-20 2005-09-20 Hewlett-Packard Development Company, L.P. Method and apparatus for configuring integrated circuit devices
US6774958B2 (en) * 2002-02-26 2004-08-10 Lg.Philips Lcd Co., Ltd. Liquid crystal panel, apparatus for inspecting the same, and method of fabricating liquid crystal display thereof
SE0202505D0 (en) * 2002-08-23 2002-08-23 Micronic Laser Systems Ab Method for aligning a substrate on a stage
US20050007473A1 (en) * 2003-07-08 2005-01-13 Theil Jeremy A. Reducing image sensor lag
DE102007033619B4 (en) * 2007-07-17 2009-12-24 Vistec Semiconductor Systems Gmbh Method for determining correction values for measured values of the position of structures on a substrate
DE102007049100B4 (en) 2007-10-11 2009-07-16 Vistec Semiconductor Systems Gmbh Method for determining the centrality of masks
DE102009019140B4 (en) * 2009-04-29 2017-03-02 Carl Zeiss Smt Gmbh Method for calibrating a position measuring device and method for measuring a mask
CN102109767B (en) * 2009-12-23 2012-05-23 北大方正集团有限公司 Method and system for determining alignment precision matching between lithography machines
DE102014222271B4 (en) 2014-10-31 2017-02-02 Carl Zeiss Smt Gmbh Mask inspection system for inspection of lithographic masks
CN105988303B (en) * 2015-02-26 2018-03-30 上海微电子装备（集团）股份有限公司 A kind of mask transmitting device and transmission method
DE102016107524B4 (en) * 2016-04-22 2019-11-14 Carl Zeiss Smt Gmbh Method for detecting the position of a mask holder on a measuring table
KR102280538B1 (en) * 2019-11-18 2021-07-22 한양대학교 산학협력단 System for co-location tracking of correlative microscopy and opeation method thereof

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4005651A (en) * 1972-04-25 1977-02-01 Societe Honeywell Bull (Societe Anonyme) Apparatus for orienting patterns provided on masks for serigraphy
US4388386A (en) * 1982-06-07 1983-06-14 International Business Machines Corporation Mask set mismatch
JPS5963725A (en) * 1982-10-05 1984-04-11 Toshiba Corp Pattern inspector
JPS59119204A (en) * 1982-12-27 1984-07-10 Toshiba Corp Mark position detecting method
US4586822A (en) * 1983-06-21 1986-05-06 Nippon Kogaku K. K. Inspecting method for mask for producing semiconductor device
DE3910048A1 (en) * 1989-03-28 1990-08-30 Heidelberg Instr Gmbh Laser Un Method for producing or inspecting microstructures on large-area substrates
JPH09252043A (en) * 1996-03-14 1997-09-22 Nikon Corp Positioning method
US6624433B2 (en) * 1994-02-22 2003-09-23 Nikon Corporation Method and apparatus for positioning substrate and the like
JP3757430B2 (en) * 1994-02-22 2006-03-22 株式会社ニコン Substrate positioning apparatus and exposure apparatus
JPH08236419A (en) * 1995-02-24 1996-09-13 Nikon Corp Positioning method
US5497007A (en) * 1995-01-27 1996-03-05 Applied Materials, Inc. Method for automatically establishing a wafer coordinate system
US5854819A (en) * 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
JP2988393B2 (en) * 1996-08-29 1999-12-13 日本電気株式会社 Exposure method
JP4301584B2 (en) * 1998-01-14 2009-07-22 株式会社ルネサステクノロジ Reticle, exposure apparatus using the same, exposure method, and semiconductor device manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9954785A1 *

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DE19817714A1 (en) 1999-11-04
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US6226087B1 (en) 2001-05-01
KR20010042869A (en) 2001-05-25
TW385359B (en) 2000-03-21
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WO1999054785A1 (en) 1999-10-28
DE19817714B4 (en) 2006-12-28

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