EP1076897A1 - Magnetic head having a layer structure - Google Patents
Magnetic head having a layer structureInfo
- Publication number
- EP1076897A1 EP1076897A1 EP00907561A EP00907561A EP1076897A1 EP 1076897 A1 EP1076897 A1 EP 1076897A1 EP 00907561 A EP00907561 A EP 00907561A EP 00907561 A EP00907561 A EP 00907561A EP 1076897 A1 EP1076897 A1 EP 1076897A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- magnetic
- magnetic head
- head
- cobalt alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000009413 insulation Methods 0.000 claims abstract description 37
- 229910000531 Co alloy Inorganic materials 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 229910017052 cobalt Inorganic materials 0.000 claims description 15
- 239000010941 cobalt Substances 0.000 claims description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 230000004907 flux Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000002463 transducing effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000696 magnetic material Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000005546 reactive sputtering Methods 0.000 claims description 4
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000035699 permeability Effects 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910018856 CoNbZn Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910003962 NiZn Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/147—Structure or manufacture of heads, e.g. inductive with cores being composed of metal sheets, i.e. laminated cores with cores composed of isolated magnetic layers, e.g. sheets
Definitions
- Magnetic head having a layer structure.
- the invention relates to a magnetic head having a head face and a layer structure comprising a first magnetic layer, a second magnetic layer and an insulation layer electrically separating said magnetic layers, at least the first layer of said magnetic layers comprising an amorphous cobalt alloy.
- a magnetic head of this type is known from US-A 5,284,572 (PHN 13.265).
- the known magnetic head which is of the thin-film type, comprises a soft-magnetic layer functioning as a flux-guiding element and a magnetoresistive layer extending opposite an interruption of the flux-guiding element and functioning as a transducing element.
- An insulation layer of SiO which serves to electrically insulate the flux-guiding element from the transducing element, is present between these two layers.
- the insulation layer formed by deposition on the flux-guiding element has a relatively large thickness of, for example, 400 nm so as to achieve the desired insulation.
- a drawback of the presence of such a relatively thick insulation layer is that, during operation, a part of the magnetical information supplied by the flux-guiding element does not reach the transducing element but, due to the barrier caused by the insulation layer, traverses a path which does not extend through the transducing element. Of course, this has a detrimental effect on the efficiency of the magnetic head.
- the magnetic head according to the invention is characterized in that the insulation layer comprises an oxide of cobalt from the amorphous cobalt alloy.
- such an insulation layer may have such good dielectric properties and have such a homogeneous structure that already at a relatively small thickness, of the order of 10 to 100 nm, the required electrical resistance is present between the magnetic layers.
- the insulation layer is an integral part of the first magnetic layer.
- An embodiment of the magnetic head according to the invention is characterized in that the amorphous cobalt alloy is a CoNbZr alloy, particularly Co 8 NB 9 Zr 3 . It has been found that, when using a magnetic layer of a CoNbZr alloy, an insulation layer of CoNbZrO, which mainly comprises one or more oxides of cobalt, can be realized in a simple manner during manufacture. This will be elucidated in the description hereinafter.
- An embodiment of the magnetic head according to the invention is characterized as defined in claim 4. In such a magnetic head, implemented in practice as a thin-film magnetic head, the distance between the magnetoresistive element (MR element) and the flux guide may be relatively small, for example, of the order of 50 nm.
- a small distance between the MR element and the flux guide enhances the magnetic coupling between the MR element and the flux guide so that also a further object of the invention, namely providing a magnetic head having an enhanced efficiency, is achieved.
- the magnetic head according to the invention is eminently suitable as a read head in a recording system.
- An embodiment of the magnetic head according to the invention is characterized as defined in claim 5.
- a magnetic head having such a structure is generally known by the name of sandwich head.
- Sandwich heads may be used in magnetic recording and/or reproducing systems.
- Magnetic layers of an amorphous cobalt alloy have satisfactory soft-magnetical properties, such as a high saturation magnetization, a low coercivity, a low magnetostriction and a high permeability.
- the insulation layers used in the magnetic head according to the invention are provided with a high-ohmic oxide or high-ohmic oxides and have a relatively small thickness, for example, of the order of 100 nm. Consequently, there is an effective electrical barrier between the consecutive magnetic layers, so that eddy currents are suppressed effectively, and a compact stacking of magnetic layers is possible.
- the invention also relates to a method of manufacturing a layer structure comprising a first magnetic layer, an insulation layer and a second magnetic layer.
- Such a method is known from the above-mentioned US-A 5,284,572 and is used in the manufacture of the magnetic head described in the opening paragraph.
- a first magnetic layer is formed by deposition of NiFe, whereafter an insulation layer is provided on this magnetic layer by means of deposition of an electrically insulating material, particularly SiO .
- an electrically insulating material particularly SiO .
- a magnetoresistive layer is provided by means of deposition on the insulation layer supported by the first magnetic layer.
- several but essentially different deposition steps namely deposition steps for forming the magnetic layers and a different deposition step for providing the insulation layer are therefore necessary.
- the method according to the invention is characterized in that a first magnetic layer is formed by deposition of an amorphous cobalt alloy, whereafter this layer is exposed to an oxidizing ambience for forming a layer comprising an oxide of cobalt, whereafter a second magnetic layer is formed by deposition of a magnetic material on the formed oxide layer.
- the oxide of cobalt is simply formed by introducing it into an oxidizing ambience after the magnetic layer has been provided.
- the insulation layer thus formed can be considered as an integral part of the first magnetic layer comprising the amorphous cobalt alloy.
- the magnetic layers by means of sputtering in a sputtering system, in which the same target can be used every time if the same cobalt " alloy, preferably a CoNbZr alloy, is used in each magnetic layer.
- the formation of the oxide of cobalt can then take place in the sputtering system used by, for example, supplying oxygen or by using plasma oxidation or reactive sputtering of the target with oxygen as a reactive gas. Both plasma oxidation and reactive sputtering are known techniques.
- a related variant of the method according to the invention is defined in claim 7.
- the invention also relates to a device for writing and/or reading information by means of a magnetic head into or from a magnetic recording medium.
- This device may be of a known type, in which the recording medium is disc or tape-shaped but in which the magnetic head according to the invention is used.
- a known device is described and shown, for example, in PCT application WO 97/24712 (herein incorporated by reference).
- Fig. 1 is a diagrammatic cross-section of a first embodiment of the magnetic head according to the invention
- Fig. 2 is a diagrammatic, perspective elevational view of a second embodiment of the magnetic head according to the invention
- Fig. 3 is an elevational view, according to arrow III, of a part of the second embodiment on a larger scale.
- the magnetic head 1 is implemented as a thin-film magnetic head and has a head face 3.
- the magnetic head 1 comprises a substrate 5, a layer structure 7 present on the substrate 5 and a protective block 9 present on the layer structure 7.
- the layer structure 7 is provided with an insulating basic layer 11 of, for example, SiO 2 or Al 2 O 3 , which is provided on the substrate 5 of a magnetically conducting material such as an NiZn ferrite.
- the layer structure 7 is further provided with a first magnetic layer 13a, 13b, a first layer part 13a of which bounds the head face 3 and a second layer part 13b is spaced apart therefrom, while a gap or slit 15 filled with a nonmagnetic, non-electrically conducting material such as SiO 2 extends between the two layer parts 13a and 13b.
- the first layer part 13a constitutes a first flux guide adjacent to the head face and a second layer part 13b constitutes a second flux guide.
- the gap 15 between both flux guides 13a and 13b is bridged by a magnetoresistive element (MR element) which is formed or is also formed by a second magnetic layer 17.
- MR element magnetoresistive element
- the first magnetic layer 13a, 13b, as well as the second magnetic layer 17, are formed from an amorphous cobalt alloy, notably a CoNbZr alloy, in this embodiment.
- An insulation layer 19a, 19b electrically separating both magnetic layers 13a, 13b and 17 from each other extends between the first magnetic layer 13a, 13b and the second magnetic layer 17.
- the insulation layer 19a, 19b comprises an oxide of cobalt from the amorphous cobalt alloy of the first magnetic layer 13 a, 13b.
- the magnetic head 1 shown in Fig. 1 is manufactured by using an embodiment of the method according to the invention, in which the first magnetic layer 13a, 13b is formed on the basic layer 11 by means of sputtering deposition of the amorphous cobalt alloy in a sputtering system, whereafter this layer 13a, 13b is exposed to an oxidizing ambience for forming an oxide of cobalt, resulting in the insulation layer 19a, 19b which is thereby an integral part of the first magnetic layer 13a, 13b.
- the insulation layer 19a, 19b has a thickness of 50 nm.
- the gap 15 is filled with a non-magnetic, non-conducting material, in this embodiment SiO 2 , whereafter the second magnetic layer 17 is formed by means of sputtering deposition of a soft-magnetic material, the amorphous cobalt alloy in this embodiment. Subsequently, this layer 17 is provided with a layer 21 of an insulating material, SiO in this embodiment, on which the protective block 9 is placed. Subsequently, the head face 3, which may be flat or curved, is formed by, for example, polishing and/or lapping. Note that the electric input and output conductors are not shown in the drawing.
- the magnetic head may be implemented as a one-channel or a multichannel head.
- the magnetic head may be implemented for co-operation with a tape-shaped recording or information medium, particularly a magnetic tape, or for co-operation with a disc-shaped recording or information medium, particularly a magnetic disc or a magneto-optical disc.
- the magnetic head 101 according to the invention, shown in Figs. 2 and 3, is a sandwich head. Sandwich heads are used in systems for magnetically writing and/or reading information, such as video tape systems.
- the magnetic head 101 has two ceramic substrates 103a, 103b and 105a, 105b, a stack 107 of different layers placed between the substrates 103a, 103b and 105a, 105b, and a coil 109 as a transducing element.
- the substrates are made of CaTiO 3 .
- the stack 107 is a layer structure comprising a magnetic layer 107 of an amorphous cobalt alloy alternating with an insulation layer 107b of an oxide of cobalt from the amorphous cobalt alloy.
- the magnetic layers 107a are responsible for the transport of magnetic flux and should therefore have satisfactory soft-magnetical properties such as a high saturation magnetization, a low coercivity and a low magnetostriction.
- the permeability should be sufficiently high through a wide frequency range. It is known per se that CoNbZn alloys are suitable materials for this purpose. It is further known to make use of rotation permeability so as to achieve a high permeability through a wide frequency range, in which case the required domain orientation of the magnetic domains in a layer of CoNbZn alloy can be achieved by using a magnetic field during sputtering or by annealing the soft-magnetic material.
- the insulation layers 107b which are present serve to inhibit eddy currents which could reduce the permeability.
- the magnetic head 101 has a head face, in this embodiment also a contact face, 111 for co-operation with a magnetic tape which, during operation, moves across the head face 109 in the direction denoted by arrow x.
- the following remarks may be made with reference to the manufacture of the magnetic head 101, particularly its stack 107.
- the invention provides the possibility of realizing an increase of the production output, if both the soft-magnetic layers 107a and the insulation layers 107b are formed by means of sputtering, in which both sputtering processes are performed in one and the same sputtering apparatus.
- an advantageous method of forming all layers 107a and 107b starts from the same CoNbZr target.
- CoNbZr is deposited by means of sputtering so as to form a soft-magnetic layer 107a.
- a second step plasma oxidation is used, in which mainly cobalt oxidizes and CoNbZrO is formed so as to form a first insulation layer 107b.
- the first and second steps are subsequently repeated as often as is necessary to obtain the desired number of layers 107a and 107b of the stack 107.
- a suitable target is, for example, a target of Co 88 Nb Zr 3 alloy.
- RF powers of, for example, 100 W and 200 W at an oxygen pressure of 0.8 Pa are suitable for realizing the high-ohmic insulation layers 107b.
- the oxidation time was 10 minutes.
- CoNbZr is deposited by means of a first sputtering process using a sputtering clock so as to form the soft-magnetic layers 107a, and reactive sputtering with oxygen takes place in a second sputtering process so as to form the insulation layers 107b.
- a sputtering rate of 10 nm/min is possible at an RF power of 500 W.
- the thickness of the magnetic layers 107a was 2500 nm each and the thickness of the insulation layers 107b was 100 to 200 nm each.
- the total number of magnetic layers 107a in the stack is usually 10 to 25 in practical embodiments.
- the invention is not limited to the embodiment shown. Also types of magnetic heads other than the ones shown such as, for example, magnetic heads having giant-magnetoresistive elements and magnetic heads used as sensors, particularly of the thin-film type, fall within the scope of the invention.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Magnetic head (1) having a head face (3) and a layer structure (7) comprising a first magnetic layer (13a, 13b), a second magnetic layer (17) and a thin insulation layer (19a, 19b) electrically separating these magnetic layers. At least the first layer of these magnetic layers comprises an amorphous cobalt alloy and is an integral part of the first magnetic layer comprising the amorphous cobalt alloy.
Description
Magnetic head having a layer structure.
The invention relates to a magnetic head having a head face and a layer structure comprising a first magnetic layer, a second magnetic layer and an insulation layer electrically separating said magnetic layers, at least the first layer of said magnetic layers comprising an amorphous cobalt alloy. A magnetic head of this type is known from US-A 5,284,572 (PHN 13.265).
The known magnetic head, which is of the thin-film type, comprises a soft-magnetic layer functioning as a flux-guiding element and a magnetoresistive layer extending opposite an interruption of the flux-guiding element and functioning as a transducing element. An insulation layer of SiO , which serves to electrically insulate the flux-guiding element from the transducing element, is present between these two layers. The insulation layer formed by deposition on the flux-guiding element has a relatively large thickness of, for example, 400 nm so as to achieve the desired insulation. A drawback of the presence of such a relatively thick insulation layer is that, during operation, a part of the magnetical information supplied by the flux-guiding element does not reach the transducing element but, due to the barrier caused by the insulation layer, traverses a path which does not extend through the transducing element. Of course, this has a detrimental effect on the efficiency of the magnetic head.
It is an object of the invention to give the insulation layer in the magnetic head described in the opening paragraph a thinner structure.
To achieve this object, the magnetic head according to the invention is characterized in that the insulation layer comprises an oxide of cobalt from the amorphous cobalt alloy.
It has been found by experiment that such an insulation layer may have such good dielectric properties and have such a homogeneous structure that already at a relatively small thickness, of the order of 10 to 100 nm, the required electrical resistance is present between the magnetic layers. In one embodiment, the insulation layer is an integral part of the first magnetic layer.
An embodiment of the magnetic head according to the invention is characterized in that the amorphous cobalt alloy is a CoNbZr alloy, particularly Co 8NB9Zr3. It has been found that, when using a magnetic layer of a CoNbZr alloy, an insulation layer of
CoNbZrO, which mainly comprises one or more oxides of cobalt, can be realized in a simple manner during manufacture. This will be elucidated in the description hereinafter. An embodiment of the magnetic head according to the invention is characterized as defined in claim 4. In such a magnetic head, implemented in practice as a thin-film magnetic head, the distance between the magnetoresistive element (MR element) and the flux guide may be relatively small, for example, of the order of 50 nm. A small distance between the MR element and the flux guide enhances the magnetic coupling between the MR element and the flux guide so that also a further object of the invention, namely providing a magnetic head having an enhanced efficiency, is achieved. The magnetic head according to the invention is eminently suitable as a read head in a recording system.
An embodiment of the magnetic head according to the invention is characterized as defined in claim 5. A magnetic head having such a structure is generally known by the name of sandwich head. Sandwich heads may be used in magnetic recording and/or reproducing systems. Magnetic layers of an amorphous cobalt alloy have satisfactory soft-magnetical properties, such as a high saturation magnetization, a low coercivity, a low magnetostriction and a high permeability. The insulation layers used in the magnetic head according to the invention are provided with a high-ohmic oxide or high-ohmic oxides and have a relatively small thickness, for example, of the order of 100 nm. Consequently, there is an effective electrical barrier between the consecutive magnetic layers, so that eddy currents are suppressed effectively, and a compact stacking of magnetic layers is possible.
The invention also relates to a method of manufacturing a layer structure comprising a first magnetic layer, an insulation layer and a second magnetic layer.
Such a method is known from the above-mentioned US-A 5,284,572 and is used in the manufacture of the magnetic head described in the opening paragraph. In the known method, a first magnetic layer is formed by deposition of NiFe, whereafter an insulation layer is provided on this magnetic layer by means of deposition of an electrically insulating material, particularly SiO . Subsequently, a magnetoresistive layer is provided by means of deposition on the insulation layer supported by the first magnetic layer. In the known method, several but essentially different deposition steps, namely deposition steps for forming the magnetic layers and a different deposition step for providing the insulation layer are therefore necessary.
It is an object of the invention to improve and simplify the known method. To achieve this object, the method according to the invention is characterized in that a first magnetic layer is formed by deposition of an amorphous cobalt alloy, whereafter this layer is
exposed to an oxidizing ambience for forming a layer comprising an oxide of cobalt, whereafter a second magnetic layer is formed by deposition of a magnetic material on the formed oxide layer. In this method, the oxide of cobalt is simply formed by introducing it into an oxidizing ambience after the magnetic layer has been provided. The insulation layer thus formed can be considered as an integral part of the first magnetic layer comprising the amorphous cobalt alloy.
It is often preferred to form the magnetic layers by means of sputtering in a sputtering system, in which the same target can be used every time if the same cobalt" alloy, preferably a CoNbZr alloy, is used in each magnetic layer. The formation of the oxide of cobalt can then take place in the sputtering system used by, for example, supplying oxygen or by using plasma oxidation or reactive sputtering of the target with oxygen as a reactive gas. Both plasma oxidation and reactive sputtering are known techniques. A related variant of the method according to the invention is defined in claim 7.
The invention also relates to a device for writing and/or reading information by means of a magnetic head into or from a magnetic recording medium. This device may be of a known type, in which the recording medium is disc or tape-shaped but in which the magnetic head according to the invention is used. A known device is described and shown, for example, in PCT application WO 97/24712 (herein incorporated by reference).
With reference to the claims, it is to be noted that various combinations of the characteristic features defined in the dependent claims are possible.
These and other aspects of the invention are apparent from and will be elucidated with reference to the embodiments described hereinafter.
In the drawings:
Fig. 1 is a diagrammatic cross-section of a first embodiment of the magnetic head according to the invention,
Fig. 2 is a diagrammatic, perspective elevational view of a second embodiment of the magnetic head according to the invention, and Fig. 3 is an elevational view, according to arrow III, of a part of the second embodiment on a larger scale.
The magnetic head 1 according to the invention, shown in Fig. 1, is implemented as a thin-film magnetic head and has a head face 3. The magnetic head 1
comprises a substrate 5, a layer structure 7 present on the substrate 5 and a protective block 9 present on the layer structure 7. The layer structure 7 is provided with an insulating basic layer 11 of, for example, SiO2 or Al2O3, which is provided on the substrate 5 of a magnetically conducting material such as an NiZn ferrite. The layer structure 7 is further provided with a first magnetic layer 13a, 13b, a first layer part 13a of which bounds the head face 3 and a second layer part 13b is spaced apart therefrom, while a gap or slit 15 filled with a nonmagnetic, non-electrically conducting material such as SiO2 extends between the two layer parts 13a and 13b. The first layer part 13a constitutes a first flux guide adjacent to the head face and a second layer part 13b constitutes a second flux guide. The gap 15 between both flux guides 13a and 13b is bridged by a magnetoresistive element (MR element) which is formed or is also formed by a second magnetic layer 17. The first magnetic layer 13a, 13b, as well as the second magnetic layer 17, are formed from an amorphous cobalt alloy, notably a CoNbZr alloy, in this embodiment. An insulation layer 19a, 19b electrically separating both magnetic layers 13a, 13b and 17 from each other extends between the first magnetic layer 13a, 13b and the second magnetic layer 17. The insulation layer 19a, 19b comprises an oxide of cobalt from the amorphous cobalt alloy of the first magnetic layer 13 a, 13b.
The magnetic head 1 shown in Fig. 1 is manufactured by using an embodiment of the method according to the invention, in which the first magnetic layer 13a, 13b is formed on the basic layer 11 by means of sputtering deposition of the amorphous cobalt alloy in a sputtering system, whereafter this layer 13a, 13b is exposed to an oxidizing ambience for forming an oxide of cobalt, resulting in the insulation layer 19a, 19b which is thereby an integral part of the first magnetic layer 13a, 13b. In this embodiment, the insulation layer 19a, 19b has a thickness of 50 nm. After the insulation layer 19a, 19b has been formed, the gap 15 is filled with a non-magnetic, non-conducting material, in this embodiment SiO2, whereafter the second magnetic layer 17 is formed by means of sputtering deposition of a soft-magnetic material, the amorphous cobalt alloy in this embodiment. Subsequently, this layer 17 is provided with a layer 21 of an insulating material, SiO in this embodiment, on which the protective block 9 is placed. Subsequently, the head face 3, which may be flat or curved, is formed by, for example, polishing and/or lapping. Note that the electric input and output conductors are not shown in the drawing. It is further noted that the magnetic head may be implemented as a one-channel or a multichannel head. The magnetic head may be implemented for co-operation with a tape-shaped recording or information medium, particularly a magnetic tape, or for co-operation with a disc-shaped recording or information medium, particularly a magnetic disc or a magneto-optical disc.
The magnetic head 101 according to the invention, shown in Figs. 2 and 3, is a sandwich head. Sandwich heads are used in systems for magnetically writing and/or reading information, such as video tape systems. The magnetic head 101 has two ceramic substrates 103a, 103b and 105a, 105b, a stack 107 of different layers placed between the substrates 103a, 103b and 105a, 105b, and a coil 109 as a transducing element. In this embodiment, the substrates are made of CaTiO3. The stack 107 is a layer structure comprising a magnetic layer 107 of an amorphous cobalt alloy alternating with an insulation layer 107b of an oxide of cobalt from the amorphous cobalt alloy. The magnetic layers 107a are responsible for the transport of magnetic flux and should therefore have satisfactory soft-magnetical properties such as a high saturation magnetization, a low coercivity and a low magnetostriction.
Moreover, the permeability should be sufficiently high through a wide frequency range. It is known per se that CoNbZn alloys are suitable materials for this purpose. It is further known to make use of rotation permeability so as to achieve a high permeability through a wide frequency range, in which case the required domain orientation of the magnetic domains in a layer of CoNbZn alloy can be achieved by using a magnetic field during sputtering or by annealing the soft-magnetic material. The insulation layers 107b which are present serve to inhibit eddy currents which could reduce the permeability. It has been found that the insulation layers 107b of an oxide of cobalt from the alloy which is present have a sufficiently high electrical resistance to allow formation of insulated laminations so that eddy currents are effectively inhibited. The magnetic head 101 has a head face, in this embodiment also a contact face, 111 for co-operation with a magnetic tape which, during operation, moves across the head face 109 in the direction denoted by arrow x.
The following remarks may be made with reference to the manufacture of the magnetic head 101, particularly its stack 107. The invention provides the possibility of realizing an increase of the production output, if both the soft-magnetic layers 107a and the insulation layers 107b are formed by means of sputtering, in which both sputtering processes are performed in one and the same sputtering apparatus. In this respect, an advantageous method of forming all layers 107a and 107b starts from the same CoNbZr target. In a first step of a first method, CoNbZr is deposited by means of sputtering so as to form a soft-magnetic layer 107a. In a second step, plasma oxidation is used, in which mainly cobalt oxidizes and CoNbZrO is formed so as to form a first insulation layer 107b. The first and second steps are subsequently repeated as often as is necessary to obtain the desired number of layers 107a and 107b of the stack 107. A suitable target is, for example, a target of Co88Nb Zr3 alloy. Experiments performed in a plasma oxidation method proved that RF powers of, for example,
100 W and 200 W at an oxygen pressure of 0.8 Pa are suitable for realizing the high-ohmic insulation layers 107b. The oxidation time was 10 minutes. It was also found that, in these experiments, the magnetical properties such as coercivity of the soft-magnetic layer or layers 107a which are present are not influenced or are hardly influenced detrimentally. In a second method, CoNbZr is deposited by means of a first sputtering process using a sputtering clock so as to form the soft-magnetic layers 107a, and reactive sputtering with oxygen takes place in a second sputtering process so as to form the insulation layers 107b. Experiments proved that a sputtering rate of 10 nm/min is possible at an RF power of 500 W. The experiments further proved that the CoNbZrO formed does not have any detrimental influence on the magnetical properties of the CoNbZr alloy already present. In a practical embodiment, the thickness of the magnetic layers 107a was 2500 nm each and the thickness of the insulation layers 107b was 100 to 200 nm each. The total number of magnetic layers 107a in the stack is usually 10 to 25 in practical embodiments.
It is to be noted that the invention is not limited to the embodiment shown. Also types of magnetic heads other than the ones shown such as, for example, magnetic heads having giant-magnetoresistive elements and magnetic heads used as sensors, particularly of the thin-film type, fall within the scope of the invention.
Claims
1. A magnetic head having a head face and a layer structure comprising a first magnetic layer, a second magnetic layer and an insulation layer electrically separating said magnetic layers, at least the first layer of said magnetic layers comprising an amorphous cobalt alloy, characterized in that the insulation layer comprises an oxide of cobalt from the amorphous cobalt alloy.
2. A magnetic head as claimed in claim 1, characterized in that the insulation layer is an integral part of the first magnetic layer.
3. A magnetic head as claimed in claim 1, characterized in that the amorphous cobalt alloy is a CoNbZr alloy.
4. A magnetic head as claimed in claim 1 , characterized in that the first magnetic layer comprising the amorphous cobalt alloy is a flux guide adjacent to the head face, and the second magnetic layer is a magnetoresistive transducing element, while the insulation layer comprising the oxide of cobalt extends between the flux guide comprising the amorphous cobalt alloy and the magnetoresistive transducing element.
5. A magnetic head as claimed in claim 1 , characterized in that the layer structure comprises a stack of magnetic layers sandwiched between two substrates, in which two consecutive layers each time constitute an assembly of the first magnetic layer comprising the amorphous cobalt alloy, the insulation layer comprising the oxide of cobalt and the second magnetic layer, said magnetic head being provided with an inductive transducing element surrounding at least a part of the substrates and of said stack.
6. A method of manufacturing a layer structure, wherein a first magnetic layer is formed by deposition of an amorphous cobalt alloy, whereafter this layer is exposed to an oxidizing ambience for forming a layer comprising an oxide of cobalt, whereafter a second magnetic layer is formed by deposition of a magnetic material on the formed oxide layer.
7. A method of manufacturing a layer structure, wherein a first magnetic layer is formed by sputtering deposition from a target of an amorphous cobalt alloy, whereafter an oxide for forming an insulation layer is deposited from the same target on said layer by means of reactive sputtering.
8. A device for writing and/or reading information into or from a magnetic recording medium, which device is provided with a magnetic head as claimed in any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP00907561A EP1076897A1 (en) | 1999-03-09 | 2000-02-14 | Magnetic head having a layer structure |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99200694 | 1999-03-09 | ||
| EP99200694 | 1999-03-09 | ||
| PCT/EP2000/001172 WO2000054260A1 (en) | 1999-03-09 | 2000-02-14 | Magnetic head having a layer structure |
| EP00907561A EP1076897A1 (en) | 1999-03-09 | 2000-02-14 | Magnetic head having a layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1076897A1 true EP1076897A1 (en) | 2001-02-21 |
Family
ID=8239962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP00907561A Withdrawn EP1076897A1 (en) | 1999-03-09 | 2000-02-14 | Magnetic head having a layer structure |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1076897A1 (en) |
| JP (1) | JP2002539570A (en) |
| KR (1) | KR20010043386A (en) |
| CN (1) | CN1296609A (en) |
| WO (1) | WO2000054260A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3836294B2 (en) | 2000-03-27 | 2006-10-25 | 株式会社日立グローバルストレージテクノロジーズ | Magnetic head and magnetic recording / reproducing apparatus using the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54116663A (en) * | 1978-03-03 | 1979-09-11 | Matsushita Electric Industrial Co Ltd | Magnetic device |
| FR2473209A1 (en) * | 1980-01-08 | 1981-07-10 | Sagem | Forming protective oxide layer - on the surface of magnetic memory by coating with metal and oxidising |
| JPS59146426A (en) * | 1983-02-10 | 1984-08-22 | Matsushita Electric Ind Co Ltd | Magnetic head |
| JPH11503553A (en) * | 1996-01-31 | 1999-03-26 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Magnetic head with magnetoresistive sensor and scanning device with magnetic head |
-
2000
- 2000-02-14 EP EP00907561A patent/EP1076897A1/en not_active Withdrawn
- 2000-02-14 CN CN00800299A patent/CN1296609A/en active Pending
- 2000-02-14 JP JP2000604407A patent/JP2002539570A/en active Pending
- 2000-02-14 KR KR1020007012407A patent/KR20010043386A/en not_active Withdrawn
- 2000-02-14 WO PCT/EP2000/001172 patent/WO2000054260A1/en not_active Ceased
Non-Patent Citations (1)
| Title |
|---|
| See references of WO0054260A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1296609A (en) | 2001-05-23 |
| WO2000054260A1 (en) | 2000-09-14 |
| KR20010043386A (en) | 2001-05-25 |
| JP2002539570A (en) | 2002-11-19 |
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