EP1073085A3 - Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display - Google Patents

Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display Download PDF

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Publication number
EP1073085A3
EP1073085A3 EP00402144A EP00402144A EP1073085A3 EP 1073085 A3 EP1073085 A3 EP 1073085A3 EP 00402144 A EP00402144 A EP 00402144A EP 00402144 A EP00402144 A EP 00402144A EP 1073085 A3 EP1073085 A3 EP 1073085A3
Authority
EP
European Patent Office
Prior art keywords
field emission
cold cathode
cathode field
manufacturing cold
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00402144A
Other languages
German (de)
French (fr)
Other versions
EP1073085A2 (en
Inventor
Ishiwata Mika
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of EP1073085A2 publication Critical patent/EP1073085A2/en
Publication of EP1073085A3 publication Critical patent/EP1073085A3/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Abstract

A method of manufacturing a cold cathode field emission device, which comprises the steps of;
  • (A) forming a cathode electrode (11) on a support (10),
  • (B) forming an insulating layer (12) on the cathode electrode (11) and the support (10),
  • (C) forming a gate electrode (13A) on the insulating layer (12),
  • (D) forming an opening portion (14) having a bottom portion where the cathode electrode (11) is exposed, at least in the insulating layer (12),
  • (E) forming an electron emitting electrode composed of an electric conductive composite (17) containing electric conductive particles and a binder on the cathode electrode (11) exposed in the bottom portion of the opening portion (14), and
  • (F) removing the binder in a surface layer portion of the electron emitting electrode to expose the electric conductive particles on the surface of the electron emitting electrode (17A).
    • Figure 00000001
    EP00402144A 1999-07-29 2000-07-27 Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display Withdrawn EP1073085A3 (en)

    Applications Claiming Priority (2)

    Application Number Priority Date Filing Date Title
    JP21547999 1999-07-29
    JP21547999A JP2001043790A (en) 1999-07-29 1999-07-29 Manufacture of cold cathode electric field electron emitting element, and manufacture of cold cathode electric field electron emitting display device

    Publications (2)

    Publication Number Publication Date
    EP1073085A2 EP1073085A2 (en) 2001-01-31
    EP1073085A3 true EP1073085A3 (en) 2003-04-09

    Family

    ID=16673071

    Family Applications (1)

    Application Number Title Priority Date Filing Date
    EP00402144A Withdrawn EP1073085A3 (en) 1999-07-29 2000-07-27 Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display

    Country Status (3)

    Country Link
    EP (1) EP1073085A3 (en)
    JP (1) JP2001043790A (en)
    KR (1) KR20010039768A (en)

    Families Citing this family (9)

    * Cited by examiner, † Cited by third party
    Publication number Priority date Publication date Assignee Title
    JP4830217B2 (en) * 2001-06-18 2011-12-07 日本電気株式会社 Field emission cold cathode and manufacturing method thereof
    JP2003031116A (en) * 2001-07-17 2003-01-31 Nec Corp Field emission cold cathode and its manufacturing method and plane image device having field emission cathode
    US6406926B1 (en) * 2001-08-15 2002-06-18 Motorola, Inc. Method of forming a vacuum micro-electronic device
    KR100883647B1 (en) * 2002-10-04 2009-02-18 삼성에스디아이 주식회사 Field emission device using carbon nano tube
    KR20050079339A (en) * 2004-02-05 2005-08-10 삼성에스디아이 주식회사 Manufacturing method of field emitter
    KR101017037B1 (en) 2004-02-26 2011-02-23 삼성에스디아이 주식회사 Electron emission display device
    JP2006318702A (en) * 2005-05-11 2006-11-24 Mitsubishi Electric Corp Manufacturing method of electron emission source
    KR101103891B1 (en) * 2005-12-14 2012-01-12 현대자동차주식회사 Relay structure
    JP5110190B2 (en) * 2011-05-14 2012-12-26 日本電気株式会社 Field emission cold cathode

    Citations (8)

    * Cited by examiner, † Cited by third party
    Publication number Priority date Publication date Assignee Title
    EP0712146A1 (en) * 1994-11-08 1996-05-15 Commissariat A L'energie Atomique Field effect electron source and method for producing same application in display devices working by cathodoluminescence
    EP0724280A1 (en) * 1995-01-30 1996-07-31 Nec Corporation Method of fabricating a field-emission cold cathode
    EP0779642A1 (en) * 1995-12-14 1997-06-18 STMicroelectronics S.r.l. Process for fabricating a microtip cathode assembly for a field emission display panel
    US5695378A (en) * 1995-05-30 1997-12-09 Texas Instruments Incorporated Field emission device with suspended gate
    WO1997047020A1 (en) * 1996-06-07 1997-12-11 Candescent Technologies Corporation Gated electron emission device and method of fabrication thereof
    EP0834897A1 (en) * 1996-10-04 1998-04-08 STMicroelectronics S.r.l. Method of fabricating flat field emission display screens and flat screen obtained thereby
    EP0905737A1 (en) * 1997-09-30 1999-03-31 Ise Electronics Corporation Electron-emitting source and method of manufacturing the same
    EP1073090A2 (en) * 1999-07-27 2001-01-31 Iljin Nanotech Co., Ltd. Field emission display device using carbon nanotubes and manufacturing method thereof

    Patent Citations (8)

    * Cited by examiner, † Cited by third party
    Publication number Priority date Publication date Assignee Title
    EP0712146A1 (en) * 1994-11-08 1996-05-15 Commissariat A L'energie Atomique Field effect electron source and method for producing same application in display devices working by cathodoluminescence
    EP0724280A1 (en) * 1995-01-30 1996-07-31 Nec Corporation Method of fabricating a field-emission cold cathode
    US5695378A (en) * 1995-05-30 1997-12-09 Texas Instruments Incorporated Field emission device with suspended gate
    EP0779642A1 (en) * 1995-12-14 1997-06-18 STMicroelectronics S.r.l. Process for fabricating a microtip cathode assembly for a field emission display panel
    WO1997047020A1 (en) * 1996-06-07 1997-12-11 Candescent Technologies Corporation Gated electron emission device and method of fabrication thereof
    EP0834897A1 (en) * 1996-10-04 1998-04-08 STMicroelectronics S.r.l. Method of fabricating flat field emission display screens and flat screen obtained thereby
    EP0905737A1 (en) * 1997-09-30 1999-03-31 Ise Electronics Corporation Electron-emitting source and method of manufacturing the same
    EP1073090A2 (en) * 1999-07-27 2001-01-31 Iljin Nanotech Co., Ltd. Field emission display device using carbon nanotubes and manufacturing method thereof

    Non-Patent Citations (1)

    * Cited by examiner, † Cited by third party
    Title
    GEIS M W ET AL: "DIAMOND GRIT-BASED FIELD EMISSION CATHODES", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, VOL. 18, NR. 12, PAGE(S) 595-598, ISSN: 0741-3106, XP000727110 *

    Also Published As

    Publication number Publication date
    KR20010039768A (en) 2001-05-15
    EP1073085A2 (en) 2001-01-31
    JP2001043790A (en) 2001-02-16

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