EP1044251A1 - Ammonium borate containing compositions for stripping residues from semiconductor substrates - Google Patents

Ammonium borate containing compositions for stripping residues from semiconductor substrates

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Publication number
EP1044251A1
EP1044251A1 EP98953564A EP98953564A EP1044251A1 EP 1044251 A1 EP1044251 A1 EP 1044251A1 EP 98953564 A EP98953564 A EP 98953564A EP 98953564 A EP98953564 A EP 98953564A EP 1044251 A1 EP1044251 A1 EP 1044251A1
Authority
EP
European Patent Office
Prior art keywords
group
wafer
percentage
ammonium
formulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98953564A
Other languages
German (de)
French (fr)
Other versions
EP1044251A4 (en
Inventor
William A. Wojtczak
George Guan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Chemical Systems International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Chemical Systems International Inc filed Critical Advanced Chemical Systems International Inc
Publication of EP1044251A1 publication Critical patent/EP1044251A1/en
Publication of EP1044251A4 publication Critical patent/EP1044251A4/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C11D2111/22—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Definitions

  • the present invention relates generally to chemical formulations used in semiconductor wafer fabrication and particularly to chemical formulations, including an ammonium borate compound, that are utilized to remove residue from wafers following a resist plasma ashing step.
  • the prior art teaches the utilization of various chemical formulations to remove residue and clean wafers following a photoresist ashing step.
  • these prior art chemical formulations include strong reagents such as strong acids or strong bases to help remove unwanted inorganic residues.
  • strong reagents can cause unwanted further removal of metal or insulator layers remaining on the wafer and are therefore undesirable in many instances.
  • chemical formulations which effectively remove residue following a resist ashing step which do not attack and potentially degrade delicate structures which are meant to remain on a wafer.
  • the present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
  • the formulations contain the following general components (percentages are by weight):
  • MEA Monoethanolamine
  • PMDETA Pentamethyldiethylenetriamine
  • TAA Triethanolamine
  • Preferred formulations include:
  • Typical steps in the fabrication of semiconductor wafers involve the creation of metalized layers or insulating layers having patterned resist layers formed thereon. Such a wafer may then be exposed to plasmas (such as halogen based plasmas) to remove exposed metal or insulator. Thereafter, a plasma ashing step is conducted (typically using an oxygen based plasma) in which the remaining resist is removed from the wafer. The result is a patterned metal layer or a patterned insulator layer.
  • plasmas such as halogen based plasmas
  • the residue following the plasma ashing step is predominantly composed of inorganic compounds such as metal halides and metal oxides.
  • the present invention comprises chemical formulations for the removal of inorganic compound residues, where the formulations do not contain strong acids or strong bases of the prior art formulations.
  • the present invention comprises new formulations for stripping wafer residues which originate from high density plasma metal etching followed by plasma ashing.
  • the formulations contain amines and ammonium borates and water or another solvent as primary ingredients.
  • the preferred formulations utilize the following general components (percentages are by weight):
  • Ammonium tetraborate or ammonium pentaborate 9-20% aAxi optional polar organic solvent 0-15%
  • the preferred amines are: Monoethanolamine (MEA)
  • Preferred formulations include:
  • One or more of the preferred amines 35-57%
  • borates as metal-chelating agents in combination with amines are unique features of this invention. These formulations provided good stripping performance and considerably less corrosivity than traditional formulations containing amines and other chelating agents. Borate/amine combinations are not known to have been utilized in commercial strippers.
  • formulations of the present invention are particularly useful on wafers which have been etched with chlorine- or fluorine-containing plasmas followed by oxygen plasma ashing.
  • the residues generated by this type of processing typically contain inorganic materials such as, but not limited to. aluminum oxide and titanium oxide. These residues are often difficult to dissolve completely without causing corrosion of metal and titanium nitride features required for effective device performance.
  • the substrate was silicon oxide.
  • Example 2 A wafer having one micron diameter, three layer vias comprised of a silicon oxide top layer (7000 angstroms thick), a second layer of titanium nitride (1200 angstroms thick), and a bottom layer of aluminum.
  • the substrate was silicon oxide.
  • the present invention formulations were rated for relative stripping effectiveness and corrosivity.
  • the preferred formulations scored best and, in overall performance based on both stripping effectiveness and low corrosivity, are approximately equal.

Abstract

The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): an organic amine or mixture of amines 15-60 %, water 20-60 %, ammonium tetraborate or ammonium pentaborate 9-20 %, an optional polar organic solvent 0-15 %.

Description

Specification
AMMONIUM BORATFa CONTAINING COMPOSITIONS FOR STRIPPING RESIDUES FROM SEMICONDUCTOR SUBSTRATES
BACKGROUND OF THE INVENTION
Field of the Invention
The present invention relates generally to chemical formulations used in semiconductor wafer fabrication and particularly to chemical formulations, including an ammonium borate compound, that are utilized to remove residue from wafers following a resist plasma ashing step.
Description of the Prior Art
The prior art teaches the utilization of various chemical formulations to remove residue and clean wafers following a photoresist ashing step. Generally, these prior art chemical formulations include strong reagents such as strong acids or strong bases to help remove unwanted inorganic residues. However, such strong reagents can cause unwanted further removal of metal or insulator layers remaining on the wafer and are therefore undesirable in many instances. There is therefore a need for chemical formulations which effectively remove residue following a resist ashing step which do not attack and potentially degrade delicate structures which are meant to remain on a wafer.
SUMMARY OF THE INVENTION
The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight):
An organic amine or mixture of amines 15-60%
Water 20-60%
Ammonium tetraborate or ammonium pentaborate 9-20%
An optional polar organic solvent 0-15% The preferred amines are:
Monoethanolamine (MEA) Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
Preferred formulations include:
One or more of the preferred amines 35-57%)
Ammonium tetraborate 10-20%o Water 28-49%
N-Methylpyrrolidone 0- 15%
Examples of preferred formulations are:
TEA 35.2% .Ammonium tetraborate 11 Λ%
Water 39%
N-Methylpyrrolidone 14.3%
MEA 35% Ammonium tetraborate 20%
Water 45%
It is an advantage of the present invention that it effectively removes inorganic residues following a plasma ashing step. It is another advantage of the present invention that it effectively removes metal halide and metal oxide residues following plasma ashing.
It is a further advantage of the present invention that it effectively removes inorganic residue from a semiconductor wafer following plasma ashing without containing a strong acid or a strong base. These and other features and advantages of the present invention will become understood to those of ordinary skill in the art upon review of the following detailed description of the preferred embodiments.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Typical steps in the fabrication of semiconductor wafers involve the creation of metalized layers or insulating layers having patterned resist layers formed thereon. Such a wafer may then be exposed to plasmas (such as halogen based plasmas) to remove exposed metal or insulator. Thereafter, a plasma ashing step is conducted (typically using an oxygen based plasma) in which the remaining resist is removed from the wafer. The result is a patterned metal layer or a patterned insulator layer.
This series of steps generally results in a residue which must be removed from the wafer prior to further fabrication steps. The residue following the plasma ashing step is predominantly composed of inorganic compounds such as metal halides and metal oxides.
Various chemical formulations are currently used to remove the inorganic compound residues. These formulations are generally holdovers from older semiconductor fabrication wet chemical resist removal processes that were used prior to the introduction of the resist plasma ashing technology. The prior formulations thus typically contain strong acids or strong bases to remove residues. The present invention comprises chemical formulations for the removal of inorganic compound residues, where the formulations do not contain strong acids or strong bases of the prior art formulations.
The present invention comprises new formulations for stripping wafer residues which originate from high density plasma metal etching followed by plasma ashing. The formulations contain amines and ammonium borates and water or another solvent as primary ingredients.
The preferred formulations utilize the following general components (percentages are by weight):
An organic amine or mixture of amines 15-60% Water 20-60%
Ammonium tetraborate or ammonium pentaborate 9-20% aAxi optional polar organic solvent 0-15%
The preferred amines are: Monoethanolamine (MEA)
Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
Other amines that are effective are: N-Methyldiethanolamine
Diglycolamine Diethylethanolamine Hydroxyethylmorpholine
Preferred formulations include:
One or more of the preferred amines 35-57%
Ammonium tetraborate 10-20% Water 28-49%
N-Methylpyrrolidone 0-15%
The utilization of borates as metal-chelating agents in combination with amines are unique features of this invention. These formulations provided good stripping performance and considerably less corrosivity than traditional formulations containing amines and other chelating agents. Borate/amine combinations are not known to have been utilized in commercial strippers.
Examples of preferred formulations are:
TEA 35.2% Ammonium tetraborate 11.4%
Water 39%
N-Methylpyrrolidone 14.3%o
MEA 35% aAmmonium tetraborate 20%
Water 45%
The inventors expect that other closely related ingredients would be expected to show comparable performance to those utilized in the preferred formulations. These include:
A. Other organic amines are expected to be suitable:
B. Other polar organic solvents are expected to be suitable.
C. It would also be expected that inclusion of optional components such as surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents would constitute obvious additions to those practiced in the art.
The formulations of the present invention are particularly useful on wafers which have been etched with chlorine- or fluorine-containing plasmas followed by oxygen plasma ashing.
The residues generated by this type of processing typically contain inorganic materials such as, but not limited to. aluminum oxide and titanium oxide. These residues are often difficult to dissolve completely without causing corrosion of metal and titanium nitride features required for effective device performance.
Examples
Two types of commercially generated wafers containing vias were evaluated using the formulations of the present invention. In each case, following plasma etching and ashing the residue was removed from the wafer by immersion of the wafer in a formulation bath at 50°-60° for 30 minutes followed by washing with deionized water and drying with a stream of nitrogen gas. It is expected by the inventors that the formulations can also be applied by spraying onto the wafers in an automated spray tool followed by a water rinse.
Example 1.
A wafer having 1.6 micron diameter, three layer vias comprised of a titanium nitride top layer (40 nm thick), a second layer of silicon oxide (1.3 microns thick), and a bottom layer of aluminum/copper alloy. The substrate was silicon oxide.
Examples of formulations tested are: TEA 35.2%
Ammonium tetraborate 11.4%
Water 39%
N-Methylpyrrolidone 14.3%)
MEA 35%
.Ammonium tetraborate 20%
Water 45%
Example 2. A wafer having one micron diameter, three layer vias comprised of a silicon oxide top layer (7000 angstroms thick), a second layer of titanium nitride (1200 angstroms thick), and a bottom layer of aluminum. The substrate was silicon oxide.
Examples of formulations tested are:
TEA 35.2% Ammonium tetraborate 11.4%
Water 39%
N-Methylpyrrolidone 14.3%
MEA 35% Ammonium tetraborate 20%
Water 45%
The present invention formulations were rated for relative stripping effectiveness and corrosivity. The preferred formulations scored best and, in overall performance based on both stripping effectiveness and low corrosivity, are approximately equal.
While the present invention has been shown and described with reference to particular preferred embodiments, it is to be understood that other and further changes and modifications of the invention will become apparent to those skilled in the art after understanding the present invention. It is therefore intended that the following claims cover all such alterations and modifications as fall within the true spirit and scope if the invention. What I claim is:

Claims

1. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
At least one organic amine 15-60% Water 20-60%
An ammonium borate compound 9-20%
2. A cleaning formulation as described in claim 1 wherein said ammonium borate compound is selected from the group consisting of ammonium tetraborate and ammonium pentaborate.
3. A cleaning formulation as described in claim 1 further including a polar organic solvent having a percentage by weight range of 0-15%.
4. A cleaning formulation as described in claim 2 further including a polar organic solvent having a percentage by weight range of 0-15%.
5. A cleaning formulation as described in claim 1 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA) Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
6. A cleaning formulation as described in claim 2 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA) Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
7. A cleaning formulation as described in claim 3 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA) Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
8. A cleaning formulation as described in claim 2 wherein said organic amine is selected from the group consisting of:
N-Methyldiethanolamine Diglycolamine Diethylethanolamine
Hydroxyethy lmorpholine
9. A cleaning formulation as described in claim 1 further including one or more of the compounds selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
10. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
TEA 35.2% Ammonium tetraborate 11.4%
Water 39%
N-Methylpyrrolidone 14.3%
11. A cleaning formulation as described in claim 10 further including one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
12. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
MEA 35% .Ammonium tetraborate 20%
Water 45%
13. A cleaning formulation as described in claim 12 further including one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
14. A method for fabricating a semiconductor wafer including the steps comprising: plasma etching a metalized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown:
At least one organic amine 15-60%
Water 20-60%
An ammonium borate compound 9-20%
15. A method described in claim 14 wherein said ammonium borate compound is selected from the group consisting of ammonium tetraborate and ammonium pentaborate.
16. A method as described in claim 14 further including a polar organic solvent having a percentage by weight range of 0-15%.
17. A method as described in claim 15 further including a polar organic solvent having a percentage by weight range of 0-15%.
18. A method as described in claim 14 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA) Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
19. A method as described in claim 15 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA) Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
20. A method as described in claim 16 wherein said organic amine is selected from the group consisting of:
Monoethanolamine (MEA) Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA)
21. A method as described in claim 15 wherein said organic amine is selected from the group consisting of:
N-Methyldiethanolamine Diglycolamine Diethylethanolamine Hydroxyethylmorpholine
22. A method as described in claim 14 further including one or more of the compounds selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
23. A method for fabricating a semiconductor wafer including the steps comprising: plasma etching a metalized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown: TEA 35.2%
Ammonium tetraborate 11.4%
Water 39%
N-Methylpyrrolidone 14.3%
24. A method as described in claim 23 wherein said formulation further includes one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
25. A method for fabricating a semiconductor wafer including the steps comprising: plasma etching a metalized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in a following step using a chemical formulation including the following components in the percentage by weight ranges shown: MEA 35%
Ammonium tetraborate 20%>
Water 45%
26. A method as described in claim 25 wherein said formulation 19 further includes one or more components selected from the group consisting of surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents.
EP98953564A 1997-10-14 1998-10-14 Ammonium borate containing compositions for stripping residues from semiconductor substrates Withdrawn EP1044251A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6285697P 1997-10-14 1997-10-14
US62856P 1997-10-14
PCT/US1998/021807 WO1999019447A1 (en) 1997-10-14 1998-10-14 Ammonium borate containing compositions for stripping residues from semiconductor substrates

Publications (2)

Publication Number Publication Date
EP1044251A1 true EP1044251A1 (en) 2000-10-18
EP1044251A4 EP1044251A4 (en) 2002-03-20

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Country Status (4)

Country Link
EP (1) EP1044251A4 (en)
JP (1) JP2001520267A (en)
KR (1) KR20010031136A (en)
WO (1) WO1999019447A1 (en)

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JP2002241795A (en) * 2001-02-21 2002-08-28 Tosoh Corp Cleaning agent
US7632796B2 (en) 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates

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JP2001520267A (en) 2001-10-30
WO1999019447A1 (en) 1999-04-22
KR20010031136A (en) 2001-04-16
EP1044251A4 (en) 2002-03-20

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