EP0896744B1 - Dual mode microwave band pass filter made of high quality resonators - Google Patents

Dual mode microwave band pass filter made of high quality resonators Download PDF

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Publication number
EP0896744B1
EP0896744B1 EP97922878A EP97922878A EP0896744B1 EP 0896744 B1 EP0896744 B1 EP 0896744B1 EP 97922878 A EP97922878 A EP 97922878A EP 97922878 A EP97922878 A EP 97922878A EP 0896744 B1 EP0896744 B1 EP 0896744B1
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Prior art keywords
mode
dual
fact
filter according
dielectric
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German (de)
French (fr)
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EP0896744A1 (en
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Norbert Klein
Andreas Scholen
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Forschungszentrum Juelich GmbH
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Forschungszentrum Juelich GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators
    • H01P7/105—Multimode resonators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/866—Wave transmission line, network, waveguide, or microwave storage device

Definitions

  • the present invention relates to a dual-mode two-pole filter, such as B. a bandpass filter for the Microwave range, consisting of a resonator for two Dipole modes, each with a dielectric that at least a high temperature superconductor film is arranged with a shielding case over the high temperature superconductor film is arranged and the dielectric encloses, and with a coupling device for Coupling the dipole modes and in particular for coupling from microwaves to the electromagnetic fields of the used dipole modes. It also relates to a multi-pole Dual mode filter.
  • bandpass filters in the microwave range (4-20GHz) play an important role in the preselection of individual communication channels.
  • Analog multiplexers with filters based on cavity resonators are usually used there, in which the quality factors of the individual resonators are in the range of a few 10 4 .
  • the mostly circular cylindrical cavity resonators are operated in most cases in so-called “dual modes", ie orthogonal dipole modes with a preferred direction of the electromagnetic fields in the circular area. This means that two poles of a filter can be realized with one resonator, ie an n-pole filter based on "dual-mode" resonators consists of n / 2 resonators.
  • US Pat. No. 4,489,293 discloses a strongly miniaturized "dual-mode" filter based on dielectric resonators.
  • the HE 111 mode of a cylindrical dielectric is used, which splits into two orthogonal dipole modes.
  • tan ⁇ is the loss tangent of the material from which the dielectric resonator is made.
  • Some dielectrics, such as sapphire, LaAlO 3 and rutile, have tan ⁇ values of a few 10 -6 or even less below a temperature of T 100K, so that, in principle, grades between 10 5 and 10 6 would be possible with cooled, dielectric resonators.
  • the limitation is caused by losses in the different parts i of the wall of the metallic shielding housing, which are each characterized by the surface resistance of the wall material R s, i and by a geometry factor G i .
  • the latter results from the distribution of the electromagnetic fields for the respective vibration mode of the resonator.
  • the geometry factors are so low that the quality for a normally conductive copper housing is around 10 4 .
  • the superconducting "image plane" did not lead to higher grades because the losses dominated in the remaining normal-conducting parts of the wall or in the dielectric.
  • WO 93/09575 discloses circular cylindrical dielectric resonators with two end plates made of high-temperature superconductor films. With these, grades in the range of 10 6 were demonstrated, since in the TE 011 vibration mode used there the geometry factor is sufficiently large for the normal conductive outer surface of the cylinder. However, due to the rotational symmetry of the field distribution, this mode is not a dipole mode, so that "dual-mode" operation is not possible here.
  • a filter according to the preamble of claim 1 is known from EP-A2-0656670. The object of the invention is therefore to create a dual-mode filter in which the quality factors for the individual resonators are 10 5 to 10 6 .
  • the task is for a two-pole filter according to the invention solved in that the dielectric is hemispherical, is trained.
  • the realization of more than two-pole Filtering is achieved according to claim 13.
  • the sub-claims 2-5 contain advantageous features Coupling to the electromagnetic fields of the dipole modes to adjust the resonance frequency of the dipole modes and the Setting the coupling between the dipole modes.
  • a dual-mode two-pole filter 1 is shown schematically in a side view in FIG. 1a.
  • a dielectric 3 (for example made of LaAlO 3 ) designed as a dielectric hemisphere is arranged on a high-temperature superconductor film 5 (hereinafter referred to as HTS film).
  • HTS film high-temperature superconductor film 5
  • the invention is not restricted to the arrangement of a single HTS film; rather, in another embodiment, another HTS film 5 can also be provided as the upper end plate of a cylindrical shielding housing 7.
  • the metallic shield housing 7 can be rectangular, cylindrical or hemispherical and consists, for. B. preferably made of a highly conductive metal such as copper.
  • the coupling to the two dipole modes of the "dual mode" is carried out by a coupling device, the Coupling elements 9 either linear coaxial antennas (Fig. 1a and 1b) for coupling to the electrical field or Coaxial loops (not shown) for coupling to the are magnetic field.
  • the coupling elements 9 are through Holes 11 passed through the superconducting films 5.
  • the setting of the coupling between the dipole modes takes place via another adjustable dielectric Rod 15 (Fig. 1b), preferably at an angle of 45 ° arranged with respect to the orientation of the dipole modes is.
  • FIG. 2 shows a four-pole filter consisting of two "dual-mode" resonators 1, 1.
  • the coupling between the two Resonators 1, 1 is the distance between the two Defined hemispheres and can optionally by a another adjustable dielectric rod between the Hemispheres are matched.
  • several hemispheres can be in the 2 shown side by side. The hemispheres do not necessarily have to be in one Row be arranged.
  • the metallic shield housing 7 should be in all places at least one the diameter of the hemisphere corresponding distance from the hemisphere surface have so that the losses in the shielding housing do not increase get high.
  • the hemisphere diameter is 9.6 mm
  • the dielectric constant of the hemisphere material is 23.4 (LaAlO 3 ).
  • Diameter / height of the circular cylindrical shielding housing are 26 / 14mm.
  • the calculation results in a resonance frequency of 6.58GHz, the mode is the fundamental mode (lowest resonance frequency) of the resonator.
  • the calculated geometry factors are 114 ⁇ for the lower end face (superconducting film), 16300 ⁇ for the upper end face and 10400 ⁇ for the outer surface.

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Description

Die vorliegende Erfindung betrifft ein Dual-mode-Zweipolfilter, wie z. B. ein Bandpaßfilter für den Mikrowellenbereich, bestehend aus einem Resonator für zwei Dipolmoden, mit je einem Dielektrikum, das auf wenigstens einem Hochtemperatur-Supraleiter-Film angeordnet ist, mit einem Abschirmgehäuse, das über dem Hochtemperatur-Supraleiter-Film angeordnet ist und das Dielektrikum umschließt, und mit einer Kopplungseinrichtung zur Ankopplung der Dipolmoden und insbesondere zur Ankopplung von Mikrowellen an die elektromagnetischen Felder der verwendeten Dipolmoden. Sie betrifft ferner ein mehrpoliges Dual-mode-Filter.The present invention relates to a dual-mode two-pole filter, such as B. a bandpass filter for the Microwave range, consisting of a resonator for two Dipole modes, each with a dielectric that at least a high temperature superconductor film is arranged with a shielding case over the high temperature superconductor film is arranged and the dielectric encloses, and with a coupling device for Coupling the dipole modes and in particular for coupling from microwaves to the electromagnetic fields of the used dipole modes. It also relates to a multi-pole Dual mode filter.

Für die Satelliten-Kommunikationstechnik spielen Bandpaßfilter im Mikrowellenbereich (4-20GHz) eine wichtige Rolle bei der Vorselektierung einzelner Kommunikationskanäle. Üblicherweise werden dort analoge Multiplexer mit Filtern auf der Basis von Hohlraumresonatoren verwendet, bei denen die Gütefaktoren der Einzelresonatoren im Bereich von einigen 104 liegen. Die zumeist kreiszylindrischen Hohlraumresonatoren werden in den meisten Fällen in sog. "dual-modes" betrieben, d.h. orthogonalen Dipolmoden mit Vorzugsrichtung der elektromagnetischen Felder in der Kreisfläche. Dies führt dazu, daß mit einem Resonator zwei Pole eines Filters realisiert werden können, d.h. ein n-poliges Filter auf der Basis von "dual-mode" Resonatoren besteht aus n/2 Resonatoren.For satellite communication technology, bandpass filters in the microwave range (4-20GHz) play an important role in the preselection of individual communication channels. Analog multiplexers with filters based on cavity resonators are usually used there, in which the quality factors of the individual resonators are in the range of a few 10 4 . The mostly circular cylindrical cavity resonators are operated in most cases in so-called "dual modes", ie orthogonal dipole modes with a preferred direction of the electromagnetic fields in the circular area. This means that two poles of a filter can be realized with one resonator, ie an n-pole filter based on "dual-mode" resonators consists of n / 2 resonators.

Für die Satelliten-Kommunikationstechnik ist nun zum einen eine Miniaturisierung der Filter, zum anderen, vor allem für die Ausgangsmultiplexer, eine Verringerung der Einfügedämpfung von Bedeutung. Letzteres führt dazu, daß die Hochfrequenzleistung der Ausgangsstufen, die normalerweise von Röhrenverstärkern (travelling-wave tube amplifiers) erzeugt wird, verringert werden kann. Die Einfügedämpfung nimmt mit ansteigendem Gütefaktor der Einzelresonatoren ab.On the one hand, for satellite communication technology miniaturization of the filters, on the other hand, above all for the output multiplexers, a reduction in Insertion loss important. The latter leads to the fact that the high frequency power of the output stages, the usually from tube amplifiers (traveling-wave tube amplifiers) is generated, can be reduced. The Insertion loss increases with increasing quality factor Single resonators.

Aus US-Patent 4,489,293 ist ein stark miniaturisierter "Dual-mode"-Filter auf der Basis von dielektrischen Resonatoren bekannt. Dabei wird die HE111-Mode eines zylinderförmigen Dielektrikums verwendet, die in zwei orthogonalen Dipolmoden aufspaltet.US Pat. No. 4,489,293 discloses a strongly miniaturized "dual-mode" filter based on dielectric resonators. The HE 111 mode of a cylindrical dielectric is used, which splits into two orthogonal dipole modes.

Eine weitere Miniaturisierung der in dem vorgenannten Stand der Technik beschriebenen Anordnung wird z. B. dadurch erreicht, daß der zylinderförmige dielektrische Resonator parallel zu seiner Grundfläche halbiert, und auf einem Film aus Hochtemperatur-Supraleitern aufgesetzt wird. Dadurch wird das Volumen des Resonators halbiert (image plane).Another miniaturization of those in the aforementioned state the arrangement described is z. B. thereby achieved that the cylindrical dielectric resonator halved parallel to its base, and on one Film made of high temperature superconductors is placed. This halves the volume of the resonator (image plans).

Der Nachteil dieser Anordnungen liegt darin, daß in der verwendeten HE111-Mode die Verlustbeiträge des metallischen Abschirmgehäuses zu Gütefaktoren führen, die lediglich im Bereich von 104 liegen. Dies hat folgende Ursache:The disadvantage of these arrangements is that, in the HE 111 mode used, the loss contributions of the metallic shielding housing lead to quality factors which are only in the range of 10 4 . This has the following cause:

Der unbelastete Gütefaktor Q0 eines dielektrischen Resonators mit metallischer Abschirmung ist durch den Ausdruck 1/Q0 = tanδ +Σ Rs,i / Gi gegeben. Dabei ist tanδ der Verlusttangens des Materials, aus dem der dielektrische Resonator besteht. Einige Dielektrika, wie Saphir , LaAlO3 und Rutil, weisen unterhalb einer Temperatur von T=100K tanδ-Werte von einigen 10-6 oder sogar weniger auf, so daß prinzipiell mit gekühlten, dielektrischen Resonatoren Güten zwischen 105 und 106 möglich wären. Die Begrenzung erfolgt jedoch durch Verluste in den verschiedenen Teilen i der Wand des metallischen Abschirmgehäuses, die jeweils durch den Oberflächenwiderstand des Wandmaterials Rs,i sowie durch einen Geometriefaktor Gi charakterisiert sind. Letzterer ergibt sich aus der Verteilung der elektromagnetischen Felder für die jeweilige Schwingungsmode des Resonators. Bei der im vorgenannten Stand der Technik verwendeten Schwingungsmode sind die Geometriefaktoren so niedrig, daß die Güten für ein normalleitendes Kupfergehäuse bei etwa 104 liegen. Die supraleitende "image plane" führte nicht zu höheren Güten, weil die Verluste in den verbleibenden normalleitenden Teilen der Wandung bzw. auch im Dielektrikum dominierten.The unloaded quality factor Q 0 of a dielectric resonator with a metallic shield is given by the expression 1 / Q 0 = tanδ + Σ R s, i / G i given. Here, tanδ is the loss tangent of the material from which the dielectric resonator is made. Some dielectrics, such as sapphire, LaAlO 3 and rutile, have tan δ values of a few 10 -6 or even less below a temperature of T = 100K, so that, in principle, grades between 10 5 and 10 6 would be possible with cooled, dielectric resonators. However, the limitation is caused by losses in the different parts i of the wall of the metallic shielding housing, which are each characterized by the surface resistance of the wall material R s, i and by a geometry factor G i . The latter results from the distribution of the electromagnetic fields for the respective vibration mode of the resonator. In the vibration mode used in the aforementioned prior art, the geometry factors are so low that the quality for a normally conductive copper housing is around 10 4 . The superconducting "image plane" did not lead to higher grades because the losses dominated in the remaining normal-conducting parts of the wall or in the dielectric.

Aus WO 93/09575 sind kreiszylindrische dielektrische Resonatoren mit zwei Endplatten aus Hochtemperatur-Supraleiter Filmen bekannt. Mit diesen wurden Güten im Bereich von 106 demonstriert, da in der dort verwendeten TE011 -Schwingungsmode der Geometriefaktor für die normalleitende Mantelfläche des Zylinders genügend groß ist. Aufgrund der Rotationssymmetrie der Feldverteilung ist diese Mode jedoch keine Dipolmode, so daß hier kein "dual-mode" Betrieb möglich ist. Ein Filter nach dem Oberbegriff von Anspruch 1 ist aus der Druckschrift EP-A2-0656670 bekannt. Die Aufgabe der Erfindung ist daher, ein Dual-mode-Filter zu schaffen, bei dem die Gütefaktoren für die Einzelresonatoren bei 105 bis 106 liegen.WO 93/09575 discloses circular cylindrical dielectric resonators with two end plates made of high-temperature superconductor films. With these, grades in the range of 10 6 were demonstrated, since in the TE 011 vibration mode used there the geometry factor is sufficiently large for the normal conductive outer surface of the cylinder. However, due to the rotational symmetry of the field distribution, this mode is not a dipole mode, so that "dual-mode" operation is not possible here. A filter according to the preamble of claim 1 is known from EP-A2-0656670. The object of the invention is therefore to create a dual-mode filter in which the quality factors for the individual resonators are 10 5 to 10 6 .

Die Aufgabe wird für ein Zweipolfilter erfindungsgemäß dadurch gelöst, daß das Dielektrikum halbkugelförmig, ausgebildet ist. Die Realisierung von mehr als zweipoligen Filtern wird gemäß Anspruch 13 gelöst.The task is for a two-pole filter according to the invention solved in that the dielectric is hemispherical, is trained. The realization of more than two-pole Filtering is achieved according to claim 13.

Durch die Formgebung des Dielektrikums gemäß Anspruch 1 weisen die gekrümmten Flächen des Abschirmgehäuses Geometriefaktoren auf, die groß genug sind, um mit einer oder zwei Hochtemperatur-Supraleiter-Filmen (HTS-Filmen) die in der Aufgabe geforderten Güten zu erzielen.By shaping the dielectric according to claim 1 have the curved surfaces of the shield housing Geometry factors that are large enough to work with or two high-temperature superconductor films (HTS films) to achieve the grades required in the task.

Die Unteransprüche 2-5 beinhalten vorteilhafte Merkmale zur Ankopplung an die elektromagnetischen Felder der Dipolmoden zum Abgleich der Resonanzfrequenz der Dipolmoden sowie der Einstellung der Kopplung zwichen den Dipolmoden.The sub-claims 2-5 contain advantageous features Coupling to the electromagnetic fields of the dipole modes to adjust the resonance frequency of the dipole modes and the Setting the coupling between the dipole modes.

Weitere Vorteile der vorliegenden Erfindung sind in den Unteransprüchen 6-10 sowie 12 und 13 angeführt.Further advantages of the present invention are in the Subclaims 6-10 and 12 and 13 cited.

Eine Ausführungsform der vorliegenden Erfindung wird im folgenden anhand der Zeichnungen näher beschrieben. Es zeigen:

Fig. 1a
eine schematische Seitenansicht eines Dual-mode-Zweipolfilters gemäß vorliegender Erfindung;
Fig. 1b
eine schematische Draufsicht des Dual-mode Zweipolfilters aus Fig. 1a;
Fig. 2
eine schematische Draufsicht eines Dual-mode-Vierpolfilters gemäß vorliegender Erfindung;
Fig. 3a
eine schematische Seitenansicht eines berechneten Beispiels einer Verteilung des elektrischen Feldes in einem Resonator gemäß vorliegender Erfindung;
Fig. 3b
eine schematische Draufsicht des Beispiels aus Fig. 3a;
Fig. 4a
eine schematische Seitenansicht eines berechneten Beispiels einer Verteilung des magnetischen Feldes in einem Resonator gemäß vorliegender Erfindung,
Fig. 4b
eine schematische Draufsicht des Beispiels aus Fig. 4a.
An embodiment of the present invention is described below with reference to the drawings. Show it:
Fig. 1a
is a schematic side view of a dual-mode two-pole filter according to the present invention;
Fig. 1b
a schematic plan view of the dual-mode two-pole filter from Fig. 1a;
Fig. 2
is a schematic plan view of a dual-mode four-pole filter according to the present invention;
Fig. 3a
is a schematic side view of a calculated example of a distribution of the electric field in a resonator according to the present invention;
Fig. 3b
a schematic plan view of the example of Fig. 3a;
Fig. 4a
1 shows a schematic side view of a calculated example of a distribution of the magnetic field in a resonator according to the present invention,
Fig. 4b
is a schematic plan view of the example from Fig. 4a.

In Fig 1a ist in einer Seitenansicht ein erfindungsgemäßes Dual-mode-Zweipolfilter 1 schematisch dargestellt. Ein als dielektrische Halbkugel ausgebildetes Dielektrikum 3 (z.B. aus LaAlO3) ist auf einem Hochtemperatur-Supraleiter-Film 5 (im folgenden als HTS-Film bezeichnet) angeordnet. Die Erfindung ist nicht auf die Anordnung eines einzigen HTS-Filmes beschränkt, vielmehr kann in einer anderen Ausführungsform auch ein weiterer HTS-Film 5 als obere Endplatte eines zylinderförmigen Abschirmgehäuses 7 vorgesehen sein. Das metallische Abschirmgehäuse 7 kann rechteckig, zylinderförmig oder auch halbkugelförmig ausgebildet sein und besteht z. B. vorzugsweise aus einem gut leitenden Metall, wie z.B. Kupfer.A dual-mode two-pole filter 1 according to the invention is shown schematically in a side view in FIG. 1a. A dielectric 3 (for example made of LaAlO 3 ) designed as a dielectric hemisphere is arranged on a high-temperature superconductor film 5 (hereinafter referred to as HTS film). The invention is not restricted to the arrangement of a single HTS film; rather, in another embodiment, another HTS film 5 can also be provided as the upper end plate of a cylindrical shielding housing 7. The metallic shield housing 7 can be rectangular, cylindrical or hemispherical and consists, for. B. preferably made of a highly conductive metal such as copper.

Die Ankopplung an die beiden Dipolmoden der "dual-mode" erfolgt durch eine Kopplungseinrichtung, deren Kopplungselemente 9 entweder lineare Koaxialantennen (Fig. 1a und 1b) zur Ankopplung an das elektrische-Feld oder Koaxialschleifen (nicht dargestellt) zur Ankopplung an das magnetische Feld sind. Die Kopplungselemente 9 sind durch Löcher 11 in den supraleitenden Filmen 5 hindurchgeführt.The coupling to the two dipole modes of the "dual mode" is carried out by a coupling device, the Coupling elements 9 either linear coaxial antennas (Fig. 1a and 1b) for coupling to the electrical field or Coaxial loops (not shown) for coupling to the are magnetic field. The coupling elements 9 are through Holes 11 passed through the superconducting films 5.

Der für den Betrieb des Filters 1 notwendige Abgleich der Resonanzfrequenzen der Dipolmoden erfolgt über in Längsrichtung verstellbare dielektrische Stäbe 13, z.B. aus Saphir, die den Koppelungselementen 9 in einer Ebene gegenüberliegend angeordnet sind.The adjustment necessary for the operation of the filter 1 Resonance frequencies of the dipole modes take place via in Longitudinally adjustable dielectric rods 13, e.g. out Sapphire, the coupling elements 9 in one plane are arranged opposite one another.

Die Einstellung der Kopplung zwischen den Dipolmoden erfolgt über einen weiteren verstellbaren dielektrischen Stab 15 (Fig. 1b), der vorzugsweise in einem Winkel von 45° in bezug auf die Orientierung der Dipolmoden angeordnet ist. The setting of the coupling between the dipole modes takes place via another adjustable dielectric Rod 15 (Fig. 1b), preferably at an angle of 45 ° arranged with respect to the orientation of the dipole modes is.

Fig.2 zeigt ein Vierpolfilter bestehend aus zwei "dual-mode"-Resonatoren 1, 1. Die Kopplung zwischen den beiden Resonatoren 1, 1 wird über den Abstand der beiden Halbkugeln definiert und kann gegebenenfalls durch einen weiteren verstellbaren dielektrischen Stab zwischen den Halbkugeln abgeglichen werden. Zur Realisierung von Filtern mit mehr als vier Polen können mehrere Halbkugeln in der in Fig.2 dargestellten Weise nebeneinander angeordnet sein. Dabei müssen die Halbkugeln nicht notwendigerweise in einer Reihe angeordnet sein.2 shows a four-pole filter consisting of two "dual-mode" resonators 1, 1. The coupling between the two Resonators 1, 1 is the distance between the two Defined hemispheres and can optionally by a another adjustable dielectric rod between the Hemispheres are matched. To implement filters with more than four poles, several hemispheres can be in the 2 shown side by side. The hemispheres do not necessarily have to be in one Row be arranged.

Das metallische Abschirmgehäuse 7 sollte an allen Stellen mindestens einen dem Durchmesser der Halbkugel entsprechenden Abstand von der Halbkugeloberfläche aufweisen, damit die Verluste im Abschirmgehäuse nicht zu hoch werden.The metallic shield housing 7 should be in all places at least one the diameter of the hemisphere corresponding distance from the hemisphere surface have so that the losses in the shielding housing do not increase get high.

Fig.3 und 4 zeigen die mit Hilfe eines Computercodes "MAFIA" [D. Schnitt an T. Weiland, IEEE Trans. Magn. 28, 1793 (1992)] berechnete Feldverteilung innerhalb der Kugel, aus der eindeutig der Dipolcharakter der Mode hervorgeht. Die Symmetrie der elektromagnetischen Felder entspricht der TE011 -Mode des oben zitierten, aus WO 93/09575 bekannten zylinderförmigen dielektrischen Resonators, die in einer dielektrischen Vollkugel 3-fach entartet ist, d.h. in drei orthogonalen Ausrichtungen existiert. In einer dielektrischen Halbkugel, die auf einer Metallplatte (z. B. HTS-Film) aufliegt, bleiben zwei der drei Moden erhalten. Das bedeutet, daß die Metallplatte eine "image plane" des Resonators beschreibt, die senkrecht zur Symmetrieachse zweier entarteter Moden liegt.3 and 4 show that using a computer code "MAFIA" [D. Section to T. Weiland, IEEE Trans. Magn. 28, 1793 (1992)] calculated field distribution within the sphere, from which the dipole character of fashion clearly emerges. The symmetry of the electromagnetic fields corresponds to the TE 011 mode of the cylindrical dielectric resonator cited above, known from WO 93/09575, which is degenerate 3 times in a full dielectric sphere, ie exists in three orthogonal orientations. In a dielectric hemisphere that rests on a metal plate (e.g. HTS film), two of the three modes are preserved. This means that the metal plate describes an "image plane" of the resonator, which is perpendicular to the axis of symmetry of two degenerate modes.

Wie im folgenden in einem Rechenbeispiel ausgeführt wird, ist der Verlustbeitrag der gekrümmten Fläche des metallischen Abschirmgehäuses sehr gering. Dies liegt daran, daß im Gegensatz zu der im Stand der Technik beschriebenen Anordnung hier die elektrischen Felder in der Halbkugel überwiegend parallel zur Kugeloberfläche verlaufen (Fig. 3a).As explained in a calculation example below, is the loss contribution of the curved surface of the metallic shield housing very low. This is because because in contrast to that in the prior art described arrangement here the electrical fields in the Hemisphere mainly parallel to the surface of the sphere run (Fig. 3a).

Bei dem in Fig. 3 und 4 gezeigten Rechenbeispiel beträgt der Halbkugeldurchmesser 9.6mm, die Dielektrizitätszahl des Halbkugelmaterials 23.4 (LaAlO3). Duchmesser/Höhe des kreiszylindrischen Abschirmgehäuses betragen 26/14mm. Die Berechnung ergibt eine Resonanzfrequenz von 6.58GHz, die Mode ist die Fundamentalmode (niedrigste Resonanzfrequenz) des Resonators. Die berechneten Geometriefaktoren betragen 114 Ω für die untere Stirnfläche (supraleitender Film), 16300 Ω für die obere Stirnfläche und 10400 Ω für die Mantelfläche. Daraus ergibt sich gemäß Gleichung 1 bei einer Temperatur von 77K mit typischen Rs-Werten bei der Resonanzfrequenz von etwa 0.01 Ω für Kupfer und etwa 0.0002 Ω für Hochtemperatur-Supraleiter Filme ein durch Wandverluste verursachter Gütefaktor von 300000 / 370000 für eine/zwei supraleitende Endplatten. Da der Verlustbeitrag von LaAlO3 etwa genau so groß ist, ist mit einer Gesamtgüte von etwa 150000 zu rechnen.In the calculation example shown in FIGS. 3 and 4, the hemisphere diameter is 9.6 mm, the dielectric constant of the hemisphere material is 23.4 (LaAlO 3 ). Diameter / height of the circular cylindrical shielding housing are 26 / 14mm. The calculation results in a resonance frequency of 6.58GHz, the mode is the fundamental mode (lowest resonance frequency) of the resonator. The calculated geometry factors are 114 Ω for the lower end face (superconducting film), 16300 Ω for the upper end face and 10400 Ω for the outer surface. According to equation 1 at a temperature of 77K with typical R s values at a resonance frequency of approximately 0.01 Ω for copper and approximately 0.0002 Ω for high-temperature superconductor films, this results in a quality factor of 300000/370000 for one / two superconducting end plates caused by wall losses . Since the loss contribution from LaAlO 3 is roughly the same, a total quality of around 150,000 can be expected.

Claims (13)

  1. A dual-mode two-pole filter consisting of a resonator for two dipole modes, each with one dielectric arranged on at least one high-temperature superconductor film, with a shielding enclosure that is arranged over the high-temperature superconductor film and envelops the dielectric, and with a coupling device to couple the dipole modes, characterized by the fact that the dielectric (3) is hemispherical.
  2. A dual-mode two-pole filter according to claim 1, characterized by the fact that the coupling device exhibits two coupling elements (9), and that holes (11) are formed in the at least one high-temperature superconductor film (5) to accommodate one coupling element (9).
  3. A dual-mode two-pole filter according to claim 1 or 2, characterized by the fact that dielectric rods (13, 15) are arranged in the at least one high-temperature superconductor film (5) or in the shielding enclosure (7) to offset the resonant frequency of the dipole modes.
  4. A dual-mode two-pole filter according to claim 3, characterized by the fact that the dielectric rods (13, 15) lie opposite the coupling elements (9) in a plane and are longitudinally adjustable.
  5. A dual-mode two-pole filter according to one of claims 1-4, characterized by the fact that a dielectric rod (15) is arranged in the at least one high-temperature superconductor film (5) or in the shielding enclosure (7) to set the coupling between the dipole modes.
  6. A dual-mode two-pole filter according to one of the preceding claims, characterized by the fact that the dielectric (3) consists of La AlO3.
  7. A dual-mode two-pole filter according to one of the preceding claims, characterized by the fact that the shielding enclosure (7) consists of a readily conducting metal.
  8. A dual-mode two-pole filter according to one of the preceding claims, characterized by the fact that the dielectric rods (13, 15) are made out of sapphire.
  9. A dual-mode two-pole filter according to one of claims 2-8, characterized by the fact that the coupling elements (9) are linear coaxial antennas.
  10. A dual-mode two-pole filter according to one of claims 2-8, characterized by the fact that the coupling elements (9) are coaxial loops.
  11. A multi-pole dual-mode filter, characterized by at least two dual-mode two-pole filters (1, 1) according to one of claims 1 to 10.
  12. A multi-pole dual-mode filter according to claim 11, characterized by the fact that hemispherical dielectrics (3) are arranged next to each other.
  13. A multi-pole dual-mode filter according to claim 11 or 12, characterized by the fact that the distance between the at least two hemispherical dielectrics (3) defines the coupling between the two resonators (1, 1) .
EP97922878A 1996-05-03 1997-04-26 Dual mode microwave band pass filter made of high quality resonators Expired - Lifetime EP0896744B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19617698 1996-05-03
DE19617698A DE19617698C1 (en) 1996-05-03 1996-05-03 Dual-mode two-pole filter
PCT/DE1997/000857 WO1997042679A1 (en) 1996-05-03 1997-04-26 Dual mode microwave band pass filter made of high quality resonators

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EP0896744A1 EP0896744A1 (en) 1999-02-17
EP0896744B1 true EP0896744B1 (en) 2000-05-31

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DE19824997C2 (en) * 1998-06-05 2003-01-09 Forschungszentrum Juelich Gmbh Multipole bandpass filter with elliptical filter characteristics
DE19927798A1 (en) * 1999-06-18 2001-01-04 Forschungszentrum Juelich Gmbh The electrical resonator configuration for microwave multipole bandpass filters
DE10034338C2 (en) * 2000-07-14 2002-06-20 Forschungszentrum Juelich Gmbh Multipole cascading quadruple bandpass filter based on dielectric dual-mode resonators
US7042314B2 (en) * 2001-11-14 2006-05-09 Radio Frequency Systems Dielectric mono-block triple-mode microwave delay filter
US7068127B2 (en) * 2001-11-14 2006-06-27 Radio Frequency Systems Tunable triple-mode mono-block filter assembly
DE10353104A1 (en) * 2003-11-12 2005-06-09 Tesat-Spacecom Gmbh & Co.Kg Dielectric filter set e.g. for adjusting coupling of filter, has antennas in filter firmly connected and dielectric to these are arranged with arrangement for evaluation of dielectric exhibits adjusting mechanism
US6954122B2 (en) * 2003-12-16 2005-10-11 Radio Frequency Systems, Inc. Hybrid triple-mode ceramic/metallic coaxial filter assembly
DE102007027372A1 (en) * 2007-06-11 2008-12-18 Cognis Oleochemicals Gmbh Process for the hydrogenation of glycerol
DE102007027371A1 (en) * 2007-06-11 2008-12-18 Cognis Oleochemicals Gmbh A process for preparing a compound having at least one ester group
US8111115B2 (en) * 2008-07-21 2012-02-07 Com Dev International Ltd. Method of operation and construction of dual-mode filters, dual band filters, and diplexer/multiplexer devices using half cut dielectric resonators
US8954125B2 (en) 2011-07-28 2015-02-10 International Business Machines Corporation Low-loss superconducting devices
US9138317B2 (en) 2013-03-14 2015-09-22 Osteoceramics, Inc Conduits for enhancing tissue regeneration

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489293A (en) * 1981-05-11 1984-12-18 Ford Aerospace & Communications Corporation Miniature dual-mode, dielectric-loaded cavity filter
JPS62204601A (en) * 1986-03-04 1987-09-09 Murata Mfg Co Ltd Dual mode filter
DE69020195T2 (en) * 1989-03-14 1995-11-30 Fujitsu Ltd Circuit with dielectric resonator in TE01 mode.
US5179074A (en) * 1991-01-24 1993-01-12 Space Systems/Loral, Inc. Hybrid dielectric resonator/high temperature superconductor filter
US5324713A (en) * 1991-11-05 1994-06-28 E. I. Du Pont De Nemours And Company High temperature superconductor support structures for dielectric resonator
US5585331A (en) * 1993-12-03 1996-12-17 Com Dev Ltd. Miniaturized superconducting dielectric resonator filters and method of operation thereof

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JP2000509584A (en) 2000-07-25
WO1997042679A1 (en) 1997-11-13
EP0896744A1 (en) 1999-02-17
DE59701819D1 (en) 2000-07-06
ES2148978T3 (en) 2000-10-16
CA2252659A1 (en) 1997-11-13
DE19617698C1 (en) 1997-10-16

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