EP0896744A1 - Dual mode microwave band pass filter made of high quality resonators - Google Patents

Dual mode microwave band pass filter made of high quality resonators

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Publication number
EP0896744A1
EP0896744A1 EP97922878A EP97922878A EP0896744A1 EP 0896744 A1 EP0896744 A1 EP 0896744A1 EP 97922878 A EP97922878 A EP 97922878A EP 97922878 A EP97922878 A EP 97922878A EP 0896744 A1 EP0896744 A1 EP 0896744A1
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EP
European Patent Office
Prior art keywords
mode
dual
dielectric
filter according
pole
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Granted
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EP97922878A
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German (de)
French (fr)
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EP0896744B1 (en
Inventor
Norbert Klein
Andreas Scholen
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Forschungszentrum Juelich GmbH
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Forschungszentrum Juelich GmbH
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators
    • H01P7/105—Multimode resonators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/866—Wave transmission line, network, waveguide, or microwave storage device

Definitions

  • the present invention relates to a dual-mode two-pole filter, such as. B. a bandpass filter for the microwave range, consisting of a resonator for two dipole modes, each with a dielectric, which is arranged on at least one high-temperature superconductor film, with a shielding housing, which is arranged over the high-temperature superconductor film and the dielectric encloses, and with a coupling device for coupling the dipole modes and in particular for coupling microwaves to the electromagnetic fields of the dipole modes used. It also relates to a multi-pole dual-mode filter.
  • bandpass filters in the microwave range (4-20GHz) play an important role in the preselection of individual communication channels.
  • Analog multiplexers with filters based on cavity resonators are usually used there, in which the quality factors of the individual resonators are in the range of a few 10 4 .
  • the mostly circular cylindrical cavity resonators are operated in most cases in so-called “dual modes", ie orthogonal dipole modes with a preferred direction of the electromagnetic fields in the circular area. This means that two poles of a filter can be realized with one resonator, ie an n-pole filter based on "dual-mode" resonators consists of n / 2 resonators.
  • REPLACEMENT BLA ⁇ (RULE 26) the high frequency power of the output stages, which is normally generated by tube amplifiers (traveling-wave tube amplifiers), can be reduced.
  • Insertion loss decreases with increasing quality factor of the individual resonators.
  • a strongly miniaturized "dual-mode M filter based on dielectric resonators is known from US Pat. No. 4,489,293.
  • the HE 1 L1 mode of a cylindrical dielectric is used, which splits into two orthogonal dipole modes.
  • tan ⁇ is the loss tangent of the material from which the dielectric resonator is made.
  • the limitation is caused by losses in the various parts i of the wall of the metallic shielding housing, which are each characterized by the surface resistance of the wall material R s ⁇ and by a geometry factor G ⁇ . The latter results from the distribution of the electromagnetic fields for the respective vibration mode of the resonator.
  • WO 93/09575 discloses circular cylindrical dielectric resonators with two end plates made of high-temperature superconductor films. With these, grades in the range of 10 6 were demonstrated, since in the TE 011 vibration mode used there the geometry factor is sufficiently large for the normal conductive outer surface of the cylinder. However, due to the rotational symmetry of the field distribution, this mode is not a dipole mode, so that "dual-mode" operation is not possible here.
  • the object of the invention is therefore to create a dual-mode filter in which the quality factors for the individual resonators are 10 5 to 10 6 .
  • the object is achieved according to the invention for a two-pole filter in that the dielectric is hemispherical.
  • the implementation of more than two-pole filters is solved according to claim 13.
  • the curved surfaces of the shielding housing have geometric factors that are large enough to accommodate one or two high-temperature superconductor films (HTS films) to achieve the qualities required in the task.
  • HTS films high-temperature superconductor films
  • Subclaims 2-5 contain advantageous features for coupling to the electromagnetic fields of the dipole modes to adjust the resonance frequency of the dipole modes and to set the coupling between the dipole modes.
  • Fig. La is a schematic side view of a dual-mode two-pole filter according to the present invention.
  • Fig. Lb is a schematic plan view of the dual-mode ⁇ two-pole filter from Fig. La;
  • FIG. 2 shows a schematic top view of a dual-mode four-pole filter according to the present invention
  • 3a shows a schematic side view of a calculated example of a distribution of the electric field in a resonator according to the present invention
  • FIG. 3b shows a schematic top view of the example from FIG. 3a;
  • 4a is a schematic side view of a calculated example of a distribution of the magnetic field in a resonator according to the present
  • FIG. 4b shows a schematic top view of the example from FIG. 4a.
  • a dual-mode two-pole filter 1 according to the invention is shown schematically in a side view in FIG.
  • a dielectric 3 (for example made of LaA10 3 ) designed as a dielectric hemisphere is arranged on a high-temperature superconductor film 5 (hereinafter referred to as HTS film).
  • HTS film high-temperature superconductor film 5
  • the invention is not limited to the arrangement of a single HTS film; rather, in another embodiment, another HTS film 5 can also be provided as the upper end plate of a cylindrical shielding housing 7.
  • the metallic shield housing 7 can be rectangular, cylindrical or hemispherical and consists, for. B. preferably made of a highly conductive metal such as copper.
  • the coupling to the two dipole modes of the "dual mode" is carried out by a coupling device, the coupling elements 9 of which are either linear coaxial antennas (FIGS. 1 a and 1 b) for coupling to the electric field or coaxial loops (not shown) for coupling to the magnetic field .
  • the coupling elements 9 are passed through holes 11 in the superconducting films 5.
  • the coupling between the dipole modes is set via a further adjustable dielectric rod 15 (FIG. 1b), which is preferably arranged at an angle of 45 ° with respect to the orientation of the dipole modes.
  • 2 shows a four-pole filter consisting of two “dual-mode” resonators 1, 1.
  • the coupling between the two resonators 1, 1 is defined by the distance between the two hemispheres and can optionally be adjusted by means of a further adjustable dielectric rod between the hemispheres become.
  • several hemispheres can be arranged next to one another in the manner shown in FIG. The hemispheres do not necessarily have to be arranged in a row.
  • the metallic shielding housing 7 should have at least a distance from the hemisphere surface corresponding to the diameter of the hemisphere at all points so that the losses in the shielding housing do not become too high.
  • the loss contribution of the curved surface of the metallic shielding housing is very small. This is because, in contrast to the arrangement described in the prior art, the electric fields in the Hemisphere run mainly parallel to the surface of the sphere (Fig. 3a).
  • calculation example s is the half-sphere diameter 9.6mm, the dielectric constant of the material hemisphere 23.4 (LaAlO ß). Diameter / height of the circular cylindrical shielding housing are 26 / 14mm.
  • the calculation results in a resonance frequency of 6.58GHz, the mode is the fundamental mode (lowest resonance frequency) o of the resonator.
  • the calculated geometry factors are 114 ⁇ for the lower end face (superconducting film), 16300 ⁇ for the upper end face and 10400 ⁇ for the outer surface.

Abstract

A dual mode band pass filter is made of resonators which have each a spherical dielectric arranged on at least one high temperature supraconductive film. The band pass filter also has a shielding housing arranged over the high temperature supraconductive film so as to enclose the dielectric, and a coupling device for coupling the dipole modes, as well as other coupling and tuning elements.

Description

wI_nιal-moden-Mikrowellen-Bandpaßfilter aus Hochgüteresonatoren w I_nιal-mode n microwave bandpass filter made of high-quality resonators
Die vorliegende Erfindung betrifft ein Dual-mode- Zweipolfilter, wie z. B. ein Bandpaßfilter für den Mikrowellenbereich, bestehend aus einem Resonator für zwei Dipolmoden, mit je einem Dielektrikum, das auf wenigstens einem Hochtemperatur-Supraleiter-Film angeordnet ist, mit einem Abschirmgehäuse, das über dem Hochtemperatur- Supraleiter-Film angeordnet ist und das Dielektrikum umschließt, und mit einer Kopplungseinrichtung zur Ankopplung der Dipolmoden und insbesondere zur Ankopplung von Mikrowellen an die elektromagnetischen Felder der verwendeten Dipolmoden. Sie betrifft ferner ein mehrpoliges Dual-mode-Filter.The present invention relates to a dual-mode two-pole filter, such as. B. a bandpass filter for the microwave range, consisting of a resonator for two dipole modes, each with a dielectric, which is arranged on at least one high-temperature superconductor film, with a shielding housing, which is arranged over the high-temperature superconductor film and the dielectric encloses, and with a coupling device for coupling the dipole modes and in particular for coupling microwaves to the electromagnetic fields of the dipole modes used. It also relates to a multi-pole dual-mode filter.
Für die Satelliten-Kommunikationstechnik spielen Bandpaßfilter im Mikrowellenbereich (4-20GHz) eine wichtige Rolle bei der Vorselektierung einzelner Kommunikationskanäle. Üblicherweise werden dort analoge Multiplexer mit Filtern auf der Basis von Hohlraumresonatoren verwendet, bei denen die Gütefaktoren der Einzelresonatoren im Bereich von einigen 104 liegen. Die zumeist kreiszylindrischen Hohlraumresonatoren werden in den meisten Fällen in sog. "dual-modes" betrieben, d.h. orthogonalen Dipolmoden mit Vorzugsrichtung der elektromagnetischen Felder in der Kreisfläche. Dies führt dazu, daß mit einem Resonator zwei Pole eines Filters realisiert werden können, d.h. ein n-poliges Filter auf der Basis von "dual-mode" Resonatoren besteht aus n/2 Resonatoren.For satellite communication technology, bandpass filters in the microwave range (4-20GHz) play an important role in the preselection of individual communication channels. Analog multiplexers with filters based on cavity resonators are usually used there, in which the quality factors of the individual resonators are in the range of a few 10 4 . The mostly circular cylindrical cavity resonators are operated in most cases in so-called "dual modes", ie orthogonal dipole modes with a preferred direction of the electromagnetic fields in the circular area. This means that two poles of a filter can be realized with one resonator, ie an n-pole filter based on "dual-mode" resonators consists of n / 2 resonators.
Für die Satelliten-Kommunikationstechnik ist nun zum einen eine Miniaturisierung der Filter, zum anderen, vor allem für die Ausgangsmultiplexer, eine Verringerung der Einfügedämpfung von Bedeutung. Letzteres führt dazu, daßMiniaturization of the filters is now important for satellite communication technology, and a reduction in insertion loss is important, especially for the output multiplexers. The latter leads to the fact that
ERSATZBLAπ (REGEL 26) die Hochfrequenzleistung der Ausgangsstufen, die normalerweise von Röhrenverstärkern (travelling-wave tube amplifiers) erzeugt wird, verringert werden kann. DieREPLACEMENT BLAπ (RULE 26) the high frequency power of the output stages, which is normally generated by tube amplifiers (traveling-wave tube amplifiers), can be reduced. The
Einfügedämpfung nimmt mit ansteigendem Gütefaktor der Einzelresonatoren ab.Insertion loss decreases with increasing quality factor of the individual resonators.
Aus US-Patent 4,489,293 ist ein stark miniaturisierter "Dual-modeM-Filter auf der Basis von dielektrischen Resonatoren bekannt. Dabei wird die HEι:L1-Mode eines zylinderförmigen Dielektrikums verwendet, die in zwei orthogonalen Dipolmoden aufspaltet.A strongly miniaturized "dual-mode M filter based on dielectric resonators is known from US Pat. No. 4,489,293. The HE 1 L1 mode of a cylindrical dielectric is used, which splits into two orthogonal dipole modes.
Eine weitere Miniaturisierung der in dem vorgenannten Stand der Technik beschriebenen Anordnung wird z. B. dadurch erreicht, daß der zylinderförmige dielektrische Resonator parallel zu seiner Grundfläche halbiert, und auf einem Film aus Hochtemperatur-Supraleitern aufgesetzt wird. Dadurch wird das Volumen des Resonators halbiert (image plane) .A further miniaturization of the arrangement described in the aforementioned prior art is described, for. B. achieved in that the cylindrical dielectric resonator halved parallel to its base, and is placed on a film of high temperature superconductors. This halves the volume of the resonator (image plane).
Der Nachteil dieser Anordnungen liegt darin, daß in der verwendeten HEm-Mode die Verlustbeiträge des metallischen Abschirmgehäuses zu Gütefaktoren führen, die lediglich im Bereich von 104 liegen. Dies hat folgende Ursache:The disadvantage of these arrangements is that, in the HEm mode used, the loss contributions of the metallic shielding housing lead to quality factors which are only in the range of 10 4 . This has the following cause:
Der unbelastete Gütefaktor QQ eineε dielektrischen Resonators mit metallischer Abschirmung ist durch den AusdruckThe unloaded quality factor Q Q of a dielectric resonator with metallic shielding is given by the expression
1/Qθ = tanδ +Σ Rs ^ / G^ (D1 / Q θ = tanδ + Σ R s ^ / G ^ (D
gegeben. Dabei ist tanδ der Verlusttangens des Materials, aus dem der dielektrische Resonator besteht. Einige Dielektrika, wie Saphir , LaAlC>3 und Rutil, weisen unterhalb einer Temperatur von T=100K tanδ-Werte von einigen 10~6 oder sogar weniger auf, so daß prinzipiell mit gekühlten, dielektrischen Resonatoren Güten zwischen 105 und 106 möglich wären. Die Begrenzung erfolgt jedoch durch Verluste in den verschiedenen Teilen i der Wand des metallischen Abschirmgehäuses, die jeweils durch den Oberflächenwiderstand des Wandmaterials Rs ± sowie durch einen Geometriefaktor G^ charakterisiert sind. Letzterer ergibt sich aus der Verteilung der elektromagnetischen Felder für die jeweilige Schwingungsmode des Resonators. Bei der im vorgenannten Stand der Technik verwendeten Schwingungsmode sind die Geomtriefaktoren so niedrig, daß die Güten für ein normalleitendes Kupfergehäuse bei etwa 104 liegen. Die supraleitende "image plane" führte nicht zu höheren Güten, weil die Verluste in den verbleibenden normalleitenden Teilen der Wandung bzw. auch im Dielektrikum dominierten.given. Here, tanδ is the loss tangent of the material from which the dielectric resonator is made. Some dielectrics, such as sapphire, LaAlC> 3 and rutile, have tan δ values of a few 10 ~ 6 or even less below a temperature of T = 100K, so that in principle with cooled dielectric resonators, grades between 10 5 and 10 6 would be possible. However, the limitation is caused by losses in the various parts i of the wall of the metallic shielding housing, which are each characterized by the surface resistance of the wall material R s ± and by a geometry factor G ^. The latter results from the distribution of the electromagnetic fields for the respective vibration mode of the resonator. In the vibration mode used in the aforementioned prior art, the geometry factors are so low that the qualities for a normally conductive copper housing are around 10 4 . The superconducting "image plane" did not lead to higher grades because the losses dominated in the remaining normally conductive parts of the wall or in the dielectric.
Aus WO 93/09575 sind kreiszylindrische dielektrische Resonatoren mit zwei Endplatten aus Hochtemperatur- Supraleiter Filmen bekannt. Mit diesen wurden Güten im Bereich von 106 demonstriert, da in der dort verwendeten TE 011 -Schwingungsmode der Geometriefaktor für die normalleitende Mantelfläche des Zylinders genügend groß ist. Aufgrund der Rotationssymmetrie der Feldverteilung ist diese Mode jedoch keine Dipolmode, so daß hier kein "dual- mode" Betrieb möglich ist.WO 93/09575 discloses circular cylindrical dielectric resonators with two end plates made of high-temperature superconductor films. With these, grades in the range of 10 6 were demonstrated, since in the TE 011 vibration mode used there the geometry factor is sufficiently large for the normal conductive outer surface of the cylinder. However, due to the rotational symmetry of the field distribution, this mode is not a dipole mode, so that "dual-mode" operation is not possible here.
Die Aufgabe der Erfindung ist daher, ein Dual-mode-Filter zu schaffen, bei dem die Gütefaktoren für die Einzelresonatoren bei 105 bis 106 liegen.The object of the invention is therefore to create a dual-mode filter in which the quality factors for the individual resonators are 10 5 to 10 6 .
Die Aufgabe wird für ein Zweipolfilter erfindungsgemäß dadurch gelöst, daß das Dielektrikum halbkugelförmig, ausgebildet ist. Die Realisierung von mehr als zweipoligen Filtern wird gemäß Anspruch 13 gelöst.The object is achieved according to the invention for a two-pole filter in that the dielectric is hemispherical. The implementation of more than two-pole filters is solved according to claim 13.
Durch die Formgebung des Dielektrikums gemäß Anspruch 1 weisen die gekrümmten Flächen deε Abschirmgehäuses Geometriefaktoren auf, die groß genug sind, um mit einer oder zwei Hochtemperatur-Supraleiter-Filmen (HTS-Filmen) die in der Aufgabe geforderten Güten zu erzielen.Due to the shape of the dielectric according to claim 1, the curved surfaces of the shielding housing have geometric factors that are large enough to accommodate one or two high-temperature superconductor films (HTS films) to achieve the qualities required in the task.
Die Unteransprüche 2-5 beinhalten vorteilhafte Merkmale zur s Ankopplung an die elektromagnetischen Felder der Dipolmoden zum Abgleich der Resonanzfrequenz der Dipolmoden sowie der Einstellung der Kopplung zwichen den Dipolmoden.Subclaims 2-5 contain advantageous features for coupling to the electromagnetic fields of the dipole modes to adjust the resonance frequency of the dipole modes and to set the coupling between the dipole modes.
Weitere Vorteile der vorliegenden Erfindung sind in den ιo Unteransprüchen 6-10 sowie 12 und 13 angeführt.Further advantages of the present invention are set out in the subclaims 6-10 and 12 and 13.
Eine Ausführungsform der vorliegenden Erfindung wird im folgenden anhand der Zeichnungen näher beschrieben. Eε zeigen:An embodiment of the present invention is described below with reference to the drawings. Eε show:
1515
Fig. la eine schematische Seitenansicht eines Dual-mode- Zweipolfilters gemäß vorliegender Erfindung;Fig. La is a schematic side view of a dual-mode two-pole filter according to the present invention;
Fig. lb eine schematische Draufsicht des Dual-mode ∞ Zweipolfilters aus Fig. la;Fig. Lb is a schematic plan view of the dual-mode ∞ two-pole filter from Fig. La;
Fig. 2 eine scheraatische Draufsicht eines Dual-mode- Vierpolfilterε gemäß vorliegender Erfindung;2 shows a schematic top view of a dual-mode four-pole filter according to the present invention;
25 Fig. 3a eine schematische Seitenansicht eines berechneten Beispiels einer Verteilung des elektrischen Feldes in einem Resonator gemäß vorliegender Erfindung;3a shows a schematic side view of a calculated example of a distribution of the electric field in a resonator according to the present invention;
30 Fig. 3b eine schematische Draufsicht des Beispiels aus Fig. 3a;3b shows a schematic top view of the example from FIG. 3a;
Fig. 4a eine schematische Seitenansicht eines berechneten Beispiels einer Verteilung des magnetischen 35 Feldes in einem Resonator gemäß vorliegender4a is a schematic side view of a calculated example of a distribution of the magnetic field in a resonator according to the present
Erfindung, Fig. 4b eine schematische Draufsicht des Beispiels aus Fig. 4a.Invention, 4b shows a schematic top view of the example from FIG. 4a.
In Fig la ist in einer Seitenansicht ein erfindungsgemäßes Dual-mode-Zweipolfilter 1 schematisch dargestellt. Ein als dielektrische Halbkugel ausgebildetes Dielektrikum 3 (z.B. aus LaA103) ist auf einem Hochtemperatur-Supraleiter-Film 5 (im folgenden als HTS-Film bezeichnet) angeordnet. Die Erfindung ist nicht auf die Anordnung eines einzigen HTS- Filmes beschränkt, vielmehr kann in einer anderen Ausführungsform auch ein weiterer HTS-Film 5 alε obere Endplatte eines zylinderförmigen Abschirmgehäuses 7 vorgesehen sein. Das metallische Abschirmgehäuse 7 kann rechteckig, zylinderförmig oder auch halbkugelförmig ausgebildet sein und besteht z. B. vorzugsweise aus einem gut leitenden Metall, wie z.B. Kupfer.A dual-mode two-pole filter 1 according to the invention is shown schematically in a side view in FIG. A dielectric 3 (for example made of LaA10 3 ) designed as a dielectric hemisphere is arranged on a high-temperature superconductor film 5 (hereinafter referred to as HTS film). The invention is not limited to the arrangement of a single HTS film; rather, in another embodiment, another HTS film 5 can also be provided as the upper end plate of a cylindrical shielding housing 7. The metallic shield housing 7 can be rectangular, cylindrical or hemispherical and consists, for. B. preferably made of a highly conductive metal such as copper.
Die Ankopplung an die beiden Dipolmoden der "dual-mode" erfolgt durch eine Kopplungseinrichtung, deren Kopplungselemente 9 entweder lineare Koaxialantennen (Fig. la und lb) zur Ankopplung an das elektrische-Feld oder Koaxialschleifen (nicht dargestellt) zur Ankopplung an das magnetische Feld sind. Die Kopplungselemente 9 sind durch Löcher 11 in den supraleitenden Filmen 5 hindurchgeführt.The coupling to the two dipole modes of the "dual mode" is carried out by a coupling device, the coupling elements 9 of which are either linear coaxial antennas (FIGS. 1 a and 1 b) for coupling to the electric field or coaxial loops (not shown) for coupling to the magnetic field . The coupling elements 9 are passed through holes 11 in the superconducting films 5.
Der für den Betrieb des Filters 1 notwendige Abgleich der Resonanzfrequenzen der Dipolmoden erfolgt über in Längsrichtung verstellbare dielektrische Stäbe 13, z.B. aus Saphir, die den Koppelungselementen 9 in einer Ebene gegenüberliegend angeordnet sind.The adjustment of the resonance frequencies of the dipole modes necessary for the operation of the filter 1 takes place via dielectric rods 13, e.g. made of sapphire, which are arranged opposite the coupling elements 9 in one plane.
Die Einstellung der Kopplung zwischen den Dipolmoden erfolgt über einen weiteren verstellbaren dielektrischen Stab 15 (Fig. lb) , der vorzugsweise in einem Winkel von 45° in bezug auf die Orientierung der Dipolmoden angeordnet ist. Fig.2 zeigt ein Vierpolfilter bestehend aus zwei "dual- mode"-Resonatoren 1, 1. Die Kopplung zwischen den beiden Resonatoren 1, 1 wird über den Abstand der beiden Halbkugeln definiert und kann gegebenenfalls durch einen weiteren verstellbaren dielektrischen Stab zwischen den Halbkugeln abgeglichen werden. Zur Realisierung von Filtern mit mehr als vier Polen können mehrere Halbkugeln in der in Fig.2 dargestellten Weise nebeneinander angeordnet sein. Dabei müssen die Halbkugeln nicht notwendigerweise in einer Reihe angeordnet sein.The coupling between the dipole modes is set via a further adjustable dielectric rod 15 (FIG. 1b), which is preferably arranged at an angle of 45 ° with respect to the orientation of the dipole modes. 2 shows a four-pole filter consisting of two “dual-mode” resonators 1, 1. The coupling between the two resonators 1, 1 is defined by the distance between the two hemispheres and can optionally be adjusted by means of a further adjustable dielectric rod between the hemispheres become. To implement filters with more than four poles, several hemispheres can be arranged next to one another in the manner shown in FIG. The hemispheres do not necessarily have to be arranged in a row.
Das metallische Abschirmgehäuse 7 sollte an allen Stellen mindestens einen dem Durchmesser der Halbkugel entsprechenden Abstand von der Halbkugeloberfläche aufweisen, damit die Verluste im Abschirmgehäuse nicht zu hoch werden.The metallic shielding housing 7 should have at least a distance from the hemisphere surface corresponding to the diameter of the hemisphere at all points so that the losses in the shielding housing do not become too high.
Fig.3 und 4 zeigen die mit Hilfe eines Computercodes "MAFIA" [D. Schnitt an T. Weiland, IEEE Trans. Magn. 28, 1793 (1992)] berechnete Feldverteilung innerhalb der Kugel, aus der eindeutig der Dipolcharakter der Mode hervorgeht. Die Symmetrie der elektromagnetischen Felder entspricht der TE0ιι -Mode des oben zitierten, aus WO 93/09575 bekannten zylinderförmigen dielektrischen Resonators, die in einer dielektrischen Vollkugel 3-fach entartet ist, d.h. in drei orthogonalen Ausrichtungen existiert. In einer dielektrischen Halbkugel, die auf einer Metallplatte (z. B. HTS-Film) aufliegt, bleiben zwei der drei Moden erhalten. Das bedeutet, daß die Metallplatte eine "image plane" des Resonators beschreibt, die senkrecht zur Symmetrieachse zweier entarteter Moden liegt.3 and 4 show that using a computer code "MAFIA" [D. Section to T. Weiland, IEEE Trans. Magn. 28, 1793 (1992)] calculated field distribution within the sphere, from which the dipole character of fashion clearly emerges. The symmetry of the electromagnetic fields corresponds to the TE 0 ιι mode of the cylindrical dielectric resonator cited above, known from WO 93/09575, which is degenerate 3 times in a full dielectric sphere, ie exists in three orthogonal orientations. In a dielectric hemisphere that rests on a metal plate (e.g. HTS film), two of the three modes are preserved. This means that the metal plate describes an "image plane" of the resonator, which is perpendicular to the axis of symmetry of two degenerate modes.
Wie im folgenden in einem Rechenbeispiel ausgeführt wird, ist der Verlustbeitrag der gekrümmten Fläche des metallischen Abschirmgehäuses sehr gering. Dies liegt daran, daß im Gegensatz zu der im Stand der Technik beschriebenen Anordnung hier die elektrischen Felder in der Halbkugel überwiegend parallel zur Kugeloberfläche verlaufen (Fig. 3a).As will be explained in a calculation example below, the loss contribution of the curved surface of the metallic shielding housing is very small. This is because, in contrast to the arrangement described in the prior art, the electric fields in the Hemisphere run mainly parallel to the surface of the sphere (Fig. 3a).
Bei dem in Fig. 3 und 4 gezeigten Rechenbeispiel beträgt s der Halbkugeldurchmesser 9.6mm, die Dielektrizitätszahl des Halbkugelmaterials 23.4 (LaAlOß). Duchmesser/Höhe des kreiszylindrischen Abschirmgehäuses betragen 26/14mm. Die Berechnung ergibt eine Resonanzfrequenz von 6.58GHz, die Mode ist die Fundamentalmode (niedrigste Resonanzfrequenz) o des Resonators. Die berechneten Geometriefaktoren betragen 114 Ω für die untere Stirnfläche (supraleitender Film), 16300 Ω für die obere Stirnfläche und 10400 Ω für die Mantelfläche. Daraus ergibt sich gemäß Gleichung 1 bei einer Temperatur von 77K mit typischen Rs-Werten bei der s Resonanzfrequenz von etwa 0.01 Ω für Kupfer und etwa 0.0002 Ω für Hochtemperatur-Supraleiter Filme ein durch Wandverluste verursachter Gütefaktor von 300000 / 370000 für eine/zwei supraleitende Endplatten. Da der Verlustbeitrag von LaAl03 etwa genau so groß ist, ist mit 0 einer Gesamtgüte von etwa 150000 zu rechnen. In the example shown in Fig. 3 and 4, calculation example s is the half-sphere diameter 9.6mm, the dielectric constant of the material hemisphere 23.4 (LaAlO ß). Diameter / height of the circular cylindrical shielding housing are 26 / 14mm. The calculation results in a resonance frequency of 6.58GHz, the mode is the fundamental mode (lowest resonance frequency) o of the resonator. The calculated geometry factors are 114 Ω for the lower end face (superconducting film), 16300 Ω for the upper end face and 10400 Ω for the outer surface. According to equation 1 at a temperature of 77K with typical R s values at the s resonance frequency of about 0.01 Ω for copper and about 0.0002 Ω for high-temperature superconductor films, a quality factor of 300000/370000 for one / two superconducting films caused by wall losses results End plates. Since the loss contribution from LaAl0 3 is roughly the same, a total quality of around 150,000 can be expected.

Claims

Patenansprüche Patent claims
1. Dual-mode-Zweipolfilter bestehend aus einem Resonator für zwei Dipolmoden, mit je einem Dielektrikum, das auf wenigstens einem Hochtemperatur-Supraleiter-Film angeordnet ist, mit einem Abschirmgehäuse, das über dem Hochtemperatur-Supraleiter-Film angeordnet ist und das Dielektrikum umschließt, und mit einer Kopplungseinrichtung zur Ankopplung der Dipolmoden, dadurch gekennzeichnet, daß das Dielektrikum (3) halbkugelförraig ausgebildet ist.1. Dual-mode two-pole filter consisting of a resonator for two dipole modes, each with a dielectric, which is arranged on at least one high-temperature superconductor film, with a shielding housing, which is arranged above the high-temperature superconductor film and encloses the dielectric , and with a coupling device for coupling the dipole modes, characterized in that the dielectric (3) is hemispherical.
2. Dual-mode-Zweipolfilter nach Anspruch 1, dadurch gekennzeichnet, daß die Kopplungseinrichtung zwei Kopplungselemente (9) aufweist, und daß in dem wenigstens einen Hochtemperatur- Supraleiter-Film (5) Löcher (11) zur Aufnahme jeweils eines Kopplungselementes (9) ausgebildet sind.2. Dual-mode two-pole filter according to claim 1, characterized in that the coupling device has two coupling elements (9), and that in the at least one high-temperature superconductor film (5) holes (11) for receiving a respective coupling element (9) are trained.
3. Dual-mode-Zweipolfilter nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß in dem weinigstens einen Hochtemperatur-Supraleiter- Film (5) oder im Abschirmgehäuse (7) dielektrische Stäbe (13, 15) zum Abgleich der Resonanzfrequenz der Dipolmoden angeordnet sind.3. Dual-mode two-pole filter according to claim 1 or 2, characterized in that in the least a high-temperature superconductor film (5) or in the shielding housing (7) dielectric rods (13, 15) are arranged for matching the resonance frequency of the dipole modes .
4. Dual-mode-Zweipolfilter nach Anspruch 3 dadurch gekennzeichnet, daß die dielektrischen Stäbe (13, 15) den Kopplungselementen (9) in einer Ebene gegenüberliegen und längsverεtellbar sind.4. Dual-mode two-pole filter according to claim 3, characterized in that the dielectric rods (13, 15) opposite the coupling elements (9) in one plane and are longitudinally adjustable.
5. Dual-mode-Zweipolfilter nach einem der Ansprüche 1-4, dadurch gekennzeichnet, daß in dem wenigstens einen Hochtemperatur-Supraleiter-Film (5) oder im Abschirmgehäuse (7) ein dielektrischer Stab (15) zur Einstellung der Kopplung zwischen den Dipolmoden angeordnet ist.5. Dual-mode two-pole filter according to one of claims 1-4, characterized in that in the at least one high-temperature superconductor film (5) or in the shielding housing (7), a dielectric rod (15) is arranged to adjust the coupling between the dipole modes.
6. Dual-mode-Zweipolfilter nach einem der vorstehenden s Ansprüche, dadurch gekennzeichnet, daß das Dielektrikum (3) aus La A103 ist.6. Dual-mode two-pole filter according to one of the preceding s claims, characterized in that the dielectric (3) is made of La A10 3 .
7. Dual-mode-Zweipolfilter nach einem der vorstehenden o Ansprüche, dadurch gekennzeichnet, daß das Abschirmgehäuse (7) aus einem gut leitenden Metall besteht.7. Dual-mode two-pole filter according to one of the preceding o claims, characterized in that the shielding housing (7) consists of a highly conductive metal.
s 8. Dual-mode-Zweipolfilter nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die dielektrischen Stäbe (13, 15) aus Saphir sind.s 8. Dual-mode two-pole filter according to one of the preceding claims, characterized in that the dielectric rods (13, 15) are made of sapphire.
0 9. Dual-mode-Zweipolfilter nach einem der Ansprüche 2-8, dadurch gekennzeichnet, daß die Kopplungselemente (9) lineare Koaxialantennen sind.0 9. Dual-mode two-pole filter according to one of claims 2-8, characterized in that the coupling elements (9) are linear coaxial antennas.
10. Dual-mode-Zweipolfilter nach einem der Ansprüche 2-8, 5 dadurch gekennzeichnet, daß die Kopplungselemente (9) Koaxialschleifen sind.10. Dual-mode two-pole filter according to one of claims 2-8, 5 characterized in that the coupling elements (9) are coaxial loops.
11. Mehrpoliger Dual-mode-Filter gekennzeichnet durch 0 wenigstens zwei Dual-mode-Zweipolfilter (1, 1) nach einem der Ansprüche l bis 10.11. Multi-pole dual-mode filter characterized by 0 at least two dual-mode two-pole filters (1, 1) according to one of claims 1 to 10.
12. Mehrpoliger Dual-mode-Filter nach Anspruch 11, dadurch gekennzeichnet, 5 daß halbkugelförmigen Dielektrika (3) nebeneinander angeordnet sind.12. Multi-pole dual-mode filter according to claim 11, characterized in 5 that hemispherical dielectrics (3) are arranged side by side.
13. Mehrpoliger Dual-mode-Filter nach Anspruch 11 oder 12, dadurch gekennzeichnet, daß der Abstand der wenigstens zwei halbkugelförmigen Dielektrika (3) die Kopplung zwischen den beiden Resonatoren (1, 1) definiert. 13. Multi-pole dual-mode filter according to claim 11 or 12, characterized in that the distance between the at least two hemispherical dielectrics (3) defines the coupling between the two resonators (1, 1).
EP97922878A 1996-05-03 1997-04-26 Dual mode microwave band pass filter made of high quality resonators Expired - Lifetime EP0896744B1 (en)

Applications Claiming Priority (3)

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DE19617698 1996-05-03
DE19617698A DE19617698C1 (en) 1996-05-03 1996-05-03 Dual-mode two-pole filter
PCT/DE1997/000857 WO1997042679A1 (en) 1996-05-03 1997-04-26 Dual mode microwave band pass filter made of high quality resonators

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EP0896744B1 (en) 2000-05-31
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CA2252659A1 (en) 1997-11-13
DE19617698C1 (en) 1997-10-16
US6484043B1 (en) 2002-11-19
WO1997042679A1 (en) 1997-11-13
ES2148978T3 (en) 2000-10-16

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