EP0887844A3 - Verfahren zum Herstellen einer Barrierenschicht auf einem Kontaktplug - Google Patents

Verfahren zum Herstellen einer Barrierenschicht auf einem Kontaktplug Download PDF

Info

Publication number
EP0887844A3
EP0887844A3 EP98111916A EP98111916A EP0887844A3 EP 0887844 A3 EP0887844 A3 EP 0887844A3 EP 98111916 A EP98111916 A EP 98111916A EP 98111916 A EP98111916 A EP 98111916A EP 0887844 A3 EP0887844 A3 EP 0887844A3
Authority
EP
European Patent Office
Prior art keywords
barrier layer
contact plug
manufacturing
structured
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP98111916A
Other languages
English (en)
French (fr)
Other versions
EP0887844A2 (de
Inventor
Frank Dr. Hintermaier
Carlos Dr. Mazure-Espejo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0887844A2 publication Critical patent/EP0887844A2/de
Publication of EP0887844A3 publication Critical patent/EP0887844A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Abstract

Das Verfahren sieht vor, auf dem Kontaktplug (16) des Halbleiterkörpers (10) eine Barrierenschicht (28; 30a) anzuordnen, um eine Oxidation des Kontaktplugs (16) zu vermeiden. Die Barrierenschicht (28; 30a) wird erfindungsgemäß durch chemische Reaktion eines vorstrukturierten, metallischen Übergangsmaterials (30) mit mindestens einem Reaktionspartner (32) erzeugt.
EP98111916A 1997-06-27 1998-06-26 Verfahren zum Herstellen einer Barrierenschicht auf einem Kontaktplug Withdrawn EP0887844A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19727457 1997-06-27
DE19727457 1997-06-27

Publications (2)

Publication Number Publication Date
EP0887844A2 EP0887844A2 (de) 1998-12-30
EP0887844A3 true EP0887844A3 (de) 2000-07-26

Family

ID=7833886

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98111916A Withdrawn EP0887844A3 (de) 1997-06-27 1998-06-26 Verfahren zum Herstellen einer Barrierenschicht auf einem Kontaktplug

Country Status (6)

Country Link
US (1) US6100187A (de)
EP (1) EP0887844A3 (de)
JP (1) JPH1187643A (de)
KR (1) KR100533211B1 (de)
CN (1) CN1208249A (de)
TW (1) TW406317B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067861B1 (en) * 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6303972B1 (en) 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US6614082B1 (en) * 1999-01-29 2003-09-02 Micron Technology, Inc. Fabrication of semiconductor devices with transition metal boride films as diffusion barriers
US6576546B2 (en) * 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
CN100367450C (zh) * 2004-03-26 2008-02-06 力晶半导体股份有限公司 制作阻挡层的方法
US7316962B2 (en) * 2005-01-07 2008-01-08 Infineon Technologies Ag High dielectric constant materials
US20060151845A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan Method to control interfacial properties for capacitors using a metal flash layer
US20060151822A1 (en) * 2005-01-07 2006-07-13 Shrinivas Govindarajan DRAM with high K dielectric storage capacitor and method of making the same

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0353120A1 (de) * 1988-07-25 1990-01-31 Fujitsu Limited Verfahren zur Herstellung einer Barriere-Schicht zwischen einem Silizium-Körper und einer Aluminium-Elektrode einer Halbleiteranordnung
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
FR2665300A1 (fr) * 1990-07-27 1992-01-31 Samsung Electronics Co Ltd Procede de fabrication d'un transistor a couche mince.
US5212620A (en) * 1992-03-03 1993-05-18 Radiant Technologies Method for isolating SiO2 layers from PZT, PLZT, and platinum layers
EP0697720A1 (de) * 1994-08-01 1996-02-21 Texas Instruments Incorporated Leitfähige Barriereschicht aus einem amorphen Nitrid als Elektrode für Material mit hoher dielektrischen Konstante
EP0697718A1 (de) * 1994-08-01 1996-02-21 Texas Instruments Incorporated Herstellungsverfahren für elektrische Verbindungen zu Materialien mit hohen dielektrischen Konstanten
US5506166A (en) * 1993-04-02 1996-04-09 Micron Technology, Inc. Method for forming capacitor compatible with high dielectric constant materials having a low contact resistance layer
US5612574A (en) * 1995-06-06 1997-03-18 Texas Instruments Incorporated Semiconductor structures using high-dielectric-constant materials and an adhesion layer
EP0856879A1 (de) * 1997-01-31 1998-08-05 Texas Instruments Incorporated Verfahren zur Herstellung eines Halbleiter-Speicherkondensators

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
EP0353120A1 (de) * 1988-07-25 1990-01-31 Fujitsu Limited Verfahren zur Herstellung einer Barriere-Schicht zwischen einem Silizium-Körper und einer Aluminium-Elektrode einer Halbleiteranordnung
FR2665300A1 (fr) * 1990-07-27 1992-01-31 Samsung Electronics Co Ltd Procede de fabrication d'un transistor a couche mince.
US5212620A (en) * 1992-03-03 1993-05-18 Radiant Technologies Method for isolating SiO2 layers from PZT, PLZT, and platinum layers
US5506166A (en) * 1993-04-02 1996-04-09 Micron Technology, Inc. Method for forming capacitor compatible with high dielectric constant materials having a low contact resistance layer
EP0697720A1 (de) * 1994-08-01 1996-02-21 Texas Instruments Incorporated Leitfähige Barriereschicht aus einem amorphen Nitrid als Elektrode für Material mit hoher dielektrischen Konstante
EP0697718A1 (de) * 1994-08-01 1996-02-21 Texas Instruments Incorporated Herstellungsverfahren für elektrische Verbindungen zu Materialien mit hohen dielektrischen Konstanten
US5612574A (en) * 1995-06-06 1997-03-18 Texas Instruments Incorporated Semiconductor structures using high-dielectric-constant materials and an adhesion layer
EP0856879A1 (de) * 1997-01-31 1998-08-05 Texas Instruments Incorporated Verfahren zur Herstellung eines Halbleiter-Speicherkondensators

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE INSPEC INSTITUTE OF ELECTRICAL ENGINEERS, STEVENAGE, GB; LEUTENECKER R; FROSCHLE B; RAMM P: "Titanium monophosphide (TiP) layers as potential diffusion barriers" *
LEUTENECKER R ET AL: "Titanium monophosphide (TiP) layers as potential diffusion barriers", MICROELECTRONIC ENGINEERING,NL,ELSEVIER PUBLISHERS BV., AMSTERDAM, vol. 37-38, 1 November 1997 (1997-11-01), pages 397 - 402, XP004103523, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
CN1208249A (zh) 1999-02-17
EP0887844A2 (de) 1998-12-30
KR100533211B1 (ko) 2006-01-27
US6100187A (en) 2000-08-08
JPH1187643A (ja) 1999-03-30
TW406317B (en) 2000-09-21
KR19990007317A (ko) 1999-01-25

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