EP0825637A3 - Epitaxial barrel reactor with a cooling system and method of operating it - Google Patents

Epitaxial barrel reactor with a cooling system and method of operating it Download PDF

Info

Publication number
EP0825637A3
EP0825637A3 EP97305330A EP97305330A EP0825637A3 EP 0825637 A3 EP0825637 A3 EP 0825637A3 EP 97305330 A EP97305330 A EP 97305330A EP 97305330 A EP97305330 A EP 97305330A EP 0825637 A3 EP0825637 A3 EP 0825637A3
Authority
EP
European Patent Office
Prior art keywords
barrel reactor
cooling system
operating
metallic surfaces
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97305330A
Other languages
German (de)
French (fr)
Other versions
EP0825637A2 (en
Inventor
Eric I. Gaylord
Charles H. Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of EP0825637A2 publication Critical patent/EP0825637A2/en
Publication of EP0825637A3 publication Critical patent/EP0825637A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Abstract

Barrel reactor apparatus for chemical vapor deposition of a material on a semiconductor wafer having a cooling system (74) which protects the semiconductor wafers from metals contamination caused by degradation of metallic surfaces of the barrel reactor (11). Degradation is caused by water reacting with other substances (e.g., HCl) in the barrel reactor (11). The cooling system (74) has a controller (90) which monitors the operational state of the barrel reactor (11) and selects an operating setpoint based on the detected operational condition. As a result, the metallic surfaces of the barrel reactor (11) are kept cool during operation to retard corrosive chemical reaction rates, and kept warmer than would be otherwise possible when the barrel reactor (11) is not operating to prevent adsorption of water by and condensation of water onto the metallic surfaces.
EP97305330A 1996-07-26 1997-07-17 Epitaxial barrel reactor with a cooling system and method of operating it Withdrawn EP0825637A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/686,565 US5849076A (en) 1996-07-26 1996-07-26 Cooling system and method for epitaxial barrel reactor
US686565 1996-07-26

Publications (2)

Publication Number Publication Date
EP0825637A2 EP0825637A2 (en) 1998-02-25
EP0825637A3 true EP0825637A3 (en) 2000-03-22

Family

ID=24756835

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97305330A Withdrawn EP0825637A3 (en) 1996-07-26 1997-07-17 Epitaxial barrel reactor with a cooling system and method of operating it

Country Status (7)

Country Link
US (1) US5849076A (en)
EP (1) EP0825637A3 (en)
JP (1) JPH1074699A (en)
KR (1) KR980011809A (en)
CN (1) CN1195036A (en)
SG (1) SG54528A1 (en)
TW (1) TW373227B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6076359A (en) * 1996-11-25 2000-06-20 American Air Liquide Inc. System and method for controlled delivery of liquified gases
JP4442841B2 (en) * 2000-06-19 2010-03-31 コバレントマテリアル株式会社 Low pressure epitaxial growth apparatus and method for controlling the apparatus
KR100337575B1 (en) * 2000-07-20 2002-05-22 장명식 Coolant temperature control apparatus of cooler for semiconductor fabrication device
US6564811B2 (en) * 2001-03-26 2003-05-20 Intel Corporation Method of reducing residue deposition onto ash chamber base surfaces
JP4251887B2 (en) * 2003-02-26 2009-04-08 東京エレクトロン株式会社 Vacuum processing equipment
CN100421209C (en) 2003-03-07 2008-09-24 东京毅力科创株式会社 Substrate-processing apparatus and temperature-regulating apparatus
JP4058364B2 (en) * 2003-03-18 2008-03-05 株式会社日立製作所 Semiconductor manufacturing equipment
US7993460B2 (en) * 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US20090154091A1 (en) 2007-12-17 2009-06-18 Yatskov Alexander I Cooling systems and heat exchangers for cooling computer components
US8170724B2 (en) 2008-02-11 2012-05-01 Cray Inc. Systems and associated methods for controllably cooling computer components
US8081459B2 (en) 2008-10-17 2011-12-20 Cray Inc. Air conditioning systems for computer systems and associated methods
US8430963B2 (en) * 2010-01-07 2013-04-30 Primestar Solar, Inc. Cool-down system and method for a vapor deposition system
US8472181B2 (en) 2010-04-20 2013-06-25 Cray Inc. Computer cabinets having progressive air velocity cooling systems and associated methods of manufacture and use
US8950470B2 (en) * 2010-12-30 2015-02-10 Poole Ventura, Inc. Thermal diffusion chamber control device and method
US20130153201A1 (en) * 2010-12-30 2013-06-20 Poole Ventura, Inc. Thermal diffusion chamber with cooling tubes
US20140038421A1 (en) * 2012-08-01 2014-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Deposition Chamber and Injector
JP5941589B1 (en) * 2015-09-14 2016-06-29 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
TWI768849B (en) * 2017-10-27 2022-06-21 美商應用材料股份有限公司 Single wafer processing environments with spatial separation
US20230235459A1 (en) * 2022-01-24 2023-07-27 Akoustis, Inc. Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd reactors with temperature-controlled injector columns and methods of forming single crystal piezoelectric layers using the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912661A1 (en) * 1979-03-30 1980-10-09 Wacker Chemitronic METHOD FOR DEPOSITING PURE SEMICONDUCTOR MATERIAL, ESPECIALLY SILICON, AND NOZZLE FOR IMPLEMENTING THE METHOD
DE3827506C1 (en) * 1988-08-12 1990-01-11 Marino 8011 Baldham De Pradetto Device and method for epitaxial deposition of especially semiconductor material onto silicon wafers from the gaseous state
JPH06140024A (en) * 1992-10-23 1994-05-20 Japan Storage Battery Co Ltd Sealed lead-acid battery
JPH06140023A (en) * 1992-10-22 1994-05-20 Sanyo Electric Co Ltd Manufacture of electrode terminal unit used for battery pack
US5364488A (en) * 1991-09-30 1994-11-15 Tokyo Ohka Kogyo Co., Ltd. Coaxial plasma processing apparatus
WO1995016804A1 (en) * 1993-12-14 1995-06-22 Materials Research Corporation Gas diffuser plate assembly and rf electrode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US5314541A (en) * 1991-05-28 1994-05-24 Tokyo Electron Limited Reduced pressure processing system and reduced pressure processing method
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912661A1 (en) * 1979-03-30 1980-10-09 Wacker Chemitronic METHOD FOR DEPOSITING PURE SEMICONDUCTOR MATERIAL, ESPECIALLY SILICON, AND NOZZLE FOR IMPLEMENTING THE METHOD
DE3827506C1 (en) * 1988-08-12 1990-01-11 Marino 8011 Baldham De Pradetto Device and method for epitaxial deposition of especially semiconductor material onto silicon wafers from the gaseous state
US5364488A (en) * 1991-09-30 1994-11-15 Tokyo Ohka Kogyo Co., Ltd. Coaxial plasma processing apparatus
JPH06140023A (en) * 1992-10-22 1994-05-20 Sanyo Electric Co Ltd Manufacture of electrode terminal unit used for battery pack
JPH06140024A (en) * 1992-10-23 1994-05-20 Japan Storage Battery Co Ltd Sealed lead-acid battery
WO1995016804A1 (en) * 1993-12-14 1995-06-22 Materials Research Corporation Gas diffuser plate assembly and rf electrode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 434 (E - 1592) 12 August 1994 (1994-08-12) *

Also Published As

Publication number Publication date
CN1195036A (en) 1998-10-07
TW373227B (en) 1999-11-01
JPH1074699A (en) 1998-03-17
US5849076A (en) 1998-12-15
SG54528A1 (en) 1998-11-16
KR980011809A (en) 1998-04-30
EP0825637A2 (en) 1998-02-25

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