EP0812041A3 - Optical short pulse reshaping device - Google Patents

Optical short pulse reshaping device Download PDF

Info

Publication number
EP0812041A3
EP0812041A3 EP97303824A EP97303824A EP0812041A3 EP 0812041 A3 EP0812041 A3 EP 0812041A3 EP 97303824 A EP97303824 A EP 97303824A EP 97303824 A EP97303824 A EP 97303824A EP 0812041 A3 EP0812041 A3 EP 0812041A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor laser
laser element
optical short
short pulses
short pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97303824A
Other languages
German (de)
French (fr)
Other versions
EP0812041B1 (en
EP0812041A2 (en
Inventor
Masashi Usami
Munefumi Tsurusawa
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Publication of EP0812041A2 publication Critical patent/EP0812041A2/en
Publication of EP0812041A3 publication Critical patent/EP0812041A3/en
Application granted granted Critical
Publication of EP0812041B1 publication Critical patent/EP0812041B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/02ASE (amplified spontaneous emission), noise; Reduction thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/08Generation of pulses with special temporal shape or frequency spectrum
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/08Generation of pulses with special temporal shape or frequency spectrum
    • H01S2301/085Generation of pulses with special temporal shape or frequency spectrum solitons
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

An optical short pulse reshaping device capable of effectively eliminating noise from or reshaping of input optical short pulses of a pulse width of pico-second order shorter than a carrier life time. The device comprises: a semiconductor laser element (11;17); means (12) for injecting an electric current to the semiconductor laser element for obtaining an oscillation state of the semiconductor laser element; means (13;14;18) for injecting into the semiconductor laser element input optical short pulses of a wavelength shorter than that of the oscillation light of said semiconductor laser element, and means (16;19) for taking out optical short pulses emitted from the semiconductor laser element distinct from its oscillation output light.
EP97303824A 1996-06-05 1997-06-04 Optical short pulse reshaping device Expired - Lifetime EP0812041B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP163669/96 1996-06-05
JP16366996 1996-06-05
JP8163669A JPH09326528A (en) 1996-06-05 1996-06-05 Short optical pulse waveform shaping device

Publications (3)

Publication Number Publication Date
EP0812041A2 EP0812041A2 (en) 1997-12-10
EP0812041A3 true EP0812041A3 (en) 1998-10-28
EP0812041B1 EP0812041B1 (en) 2001-11-14

Family

ID=15778350

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97303824A Expired - Lifetime EP0812041B1 (en) 1996-06-05 1997-06-04 Optical short pulse reshaping device

Country Status (4)

Country Link
US (1) US5912911A (en)
EP (1) EP0812041B1 (en)
JP (1) JPH09326528A (en)
DE (1) DE69708207T2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6327394B1 (en) * 1998-07-21 2001-12-04 International Business Machines Corporation Apparatus and method for deriving temporal delays in integrated circuits
JP2000323786A (en) * 1999-05-14 2000-11-24 Fujitsu Ltd Method, device, and system for shaping waveform of signal light
US7869477B2 (en) * 2002-12-18 2011-01-11 Lighttime, Llc System and method for developing high output power nanosecond range pulses from continuous wave semiconductor laser systems
JP2005070610A (en) 2003-08-27 2005-03-17 Fujitsu Ltd Multi-wavelength light source apparatus
US7876917B2 (en) * 2006-08-28 2011-01-25 Youngtack Shim Generic electromagnetically-countered systems and methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4772854A (en) * 1986-12-24 1988-09-20 Bell Communications Research, Inc. All optical repeater
JPH01143382A (en) * 1987-11-30 1989-06-05 Matsushita Electric Ind Co Ltd Optical amplifier
JPH0356944A (en) * 1989-07-25 1991-03-12 Nec Corp Method and device for amplifying light

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555785A (en) * 1979-07-12 1985-11-26 Xerox Corporation Optical repeater integrated lasers
DE69115205T2 (en) * 1990-09-24 1996-06-27 Philips Electronics Nv Optically switchable device.
FR2692374B1 (en) * 1992-06-15 1994-07-29 France Telecom METHOD AND DEVICE FOR MODULATING AND AMPLIFYING LIGHT BEAMS.
FR2707766B1 (en) * 1993-07-02 1995-12-08 Fabrice Devaux Electroabsorbent modulator and optical pulse generator comprising it.
US5546415A (en) * 1995-01-06 1996-08-13 University Of Central Florida High speed pulse slicer/demultiplexer with gain for use in solid state regenerative amplifier systems
JP2809124B2 (en) * 1995-02-09 1998-10-08 日本電気株式会社 Optical semiconductor integrated device and method of manufacturing the same
JP3429942B2 (en) * 1995-05-24 2003-07-28 Kddi株式会社 Short optical pulse waveform shaping device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4772854A (en) * 1986-12-24 1988-09-20 Bell Communications Research, Inc. All optical repeater
JPH01143382A (en) * 1987-11-30 1989-06-05 Matsushita Electric Ind Co Ltd Optical amplifier
JPH0356944A (en) * 1989-07-25 1991-03-12 Nec Corp Method and device for amplifying light

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
AGEEVA N N ET AL: "THE REVERSIBLE THRESHOLD BLEACHING IN GALLIUM ARSENIDE CRYSTALS UNDER IRRADIATION BY A PICOSECOND LIGHT PULSE HAVING PHOTON ENERGY CLOSE TO BAND GAP", PROCEEDINGS OF THE SPIE, vol. 1842, 24 September 1991 (1991-09-24), pages 70 - 82, XP000655027 *
DUBARD J ET AL: "ULTRAFAST ABSORPTION RECOVERY DUE TO STIMULATED EMISSION IN GAAS/ ALGAAS MULTIPLE QUANTUM WELLS", APPLIED PHYSICS LETTERS, vol. 50, no. 13, 30 March 1987 (1987-03-30), pages 821 - 823, XP000655188 *
MARSHALL I W ET AL: "PULSE SHAPING USING INGAASP SAT-URABLE ABSORBER INTEGRATED WITH TWSLA", PROCEEDINGS OF THE CONFERENCE ON LASERS AND ELECTRO OPTICS (CLEO), ANAHEIM, MAY 21 - 25, 1990, no. CONF. 10, 21 May 1990 (1990-05-21), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 492 - 493, XP000282301 *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 401 (E - 816) 6 September 1989 (1989-09-06) *
PATENT ABSTRACTS OF JAPAN vol. 015, no. 210 (P - 1208) 29 May 1991 (1991-05-29) *

Also Published As

Publication number Publication date
EP0812041B1 (en) 2001-11-14
EP0812041A2 (en) 1997-12-10
JPH09326528A (en) 1997-12-16
DE69708207D1 (en) 2001-12-20
DE69708207T2 (en) 2002-06-27
US5912911A (en) 1999-06-15

Similar Documents

Publication Publication Date Title
EP1056173A3 (en) Method, device and system for waveform shaping of signal light
EP1830440A3 (en) Method and device for generation of phase conjugate light and wavelength conversion, and system having the device
EP0759666A3 (en) Optical telecommunication module
EP0875968A3 (en) Semiconductor optical device and method of manufacturing the same
NO904355D0 (en) INTEGRATING LASER Diode PUMPED LASER DEVICE.
EP1696520A3 (en) Optical amplifier system
EP0657975A3 (en) Oscillation polarization mode selective semiconductor laser, light source apparatus and optical communication system using the laser.
EP1130710A3 (en) High repetition rate optical pulse generator
DE59303906D1 (en) TUNABLE SURFACE-EMITTING LASER DIODE
EP1143584A3 (en) Semiconductor laser array
DE3574784D1 (en) ELECTRO-OPTICAL DEVICE CONTAINING LASER DIODE, INPUT TRANSMISSION FIBER AND OUTPUT TRANSMISSION FIBER.
EP1008880A3 (en) Optical communications module and method for mounting optical communications module
FR2582154B1 (en) MULTI-BEAM TRANSMISSION DEVICE COMPRISING SEMICONDUCTOR ELEMENTS, PARTICULARLY LASER DIODES
EP0294787A3 (en) Highly repetitively pulsed laser device
EP0604077A3 (en) Multiple beam diode laser output scanning system.
CA2245313A1 (en) Double analog/digital automatic power controlling device in optical fiber amplifier
EP0812041A3 (en) Optical short pulse reshaping device
ES2155961T3 (en) OPTICAL SYSTEM WITH ONE OR MORE STABILIZED LASER SIGNAL SOURCES.
DE69109141D1 (en) Laser diode with stabilized transverse mode.
MX9600724A (en) Semiconductor light source having a spectrally broad, high power optical output.
EP0625812A3 (en) Quantum well type semiconductor laser device.
NL1007561A1 (en) Self-pulsating semiconductor laser.
CA2201622A1 (en) Optical q-switching to generate ultra short pulses in diode lasers
EP1130717A3 (en) Semiconductor laser light source with external cavity
EP0933665A3 (en) Light limiter

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE FR GB

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

17P Request for examination filed

Effective date: 19981230

AKX Designation fees paid

Free format text: DE FR GB

17Q First examination report despatched

Effective date: 20000107

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

RIC1 Information provided on ipc code assigned before grant

Free format text: 7H 01S 5/06 A, 7H 01S 5/40 B, 7G 02F 1/35 B, 7H 01S 3/00 B

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB

REF Corresponds to:

Ref document number: 69708207

Country of ref document: DE

Date of ref document: 20011220

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20050525

Year of fee payment: 9

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20050610

Year of fee payment: 9

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20050613

Year of fee payment: 9

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20060604

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20070103

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20060604

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20070228

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20060630