EP0786817B1 - Composants latéraux dans un dispositif semiconducteur de puissance - Google Patents
Composants latéraux dans un dispositif semiconducteur de puissance Download PDFInfo
- Publication number
- EP0786817B1 EP0786817B1 EP97410010A EP97410010A EP0786817B1 EP 0786817 B1 EP0786817 B1 EP 0786817B1 EP 97410010 A EP97410010 A EP 97410010A EP 97410010 A EP97410010 A EP 97410010A EP 0786817 B1 EP0786817 B1 EP 0786817B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- region
- conductivity type
- type
- lateral
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 17
- 230000035945 sensitivity Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000001465 metallisation Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 244000045947 parasite Species 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
Definitions
- Figure 3 shows an example of lateral thyristor formed in the upper face of the substrate N1 and comprising a P10 type P anode region, a cathode trigger region P11 type P and an N12 type N cathode region formed in the P11 region.
- An N13 region has a channel stop function.
- the lateral distance between regions P10 and P11 must be significant, substantially equal to the vertical thickness of the layer N1 considered in figure 1.
- An object of the present invention is to optimize the gain or sensitivity of desired or stray side components to be able to choose a high gain in the case of desired components and a low gain in the case of components parasites without the need to plan steps manufacturing other than those commonly used for manufacturing of a power semiconductor device.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Description
Claims (6)
- Dispositif semiconducteur monolithique comprenant au moins un composant de puissance vertical formé dans un substrat (N1) faiblement dopé d'un premier type de conductivité et comprenant, du côté de la face arrière, une première région du deuxième type de conductivité (P2) opposé au premier type de conductivité, ce dispositif comprenant en outre un composant latéral formé dans la face avant du substrat, et comprenant, en regard du composant latéral, du côté de la face arrière, une deuxième région (43, 44) du deuxième type de conductivité,
le dispositif étant caractérisé en ce que
ladite deuxième région (43, 44) du deuxième type de conductivité est d'épaisseur supérieure à la première région susmentionnée du deuxième type de conductivité, d'où il résulte que le composant latéral est à gain élevé ou à forte sensibilité. - Dispositif semiconducteur monolithique selon la revendication 1, dans laquelle le composant vertical est du type thyristor ou triac.
- Dispositif semiconducteur monolithique selon la revendication 1 ou 2, dans laquelle le composant latéral est du type thyristor ou transistor.
- Dispositif semiconducteur monolithique selon la revendication 3, dans laquelle la deuxième couche du deuxième type de conductivité occupe sensiblement la moitié de l'épaisseur du substrat.
- Dispositif semiconducteur monolithique comprenant au moins un composant de puissance vertical formé dans un substrat (N1) faiblement dopé d'un premier type de conductivité et comprenant, du côté de la face arrière, une première région du deuxième type de conductivité (P2) opposé au premier type de conductivité, ce dispositif comprenant en outre un composant latéral formé dans la face avant du substrat,
le dispositif étant caractérisé en ce que le composant latéral est un ensemble de diodes à jonction PN, et qu'il comprend, en regard desdites diodes, du côté de la face arrière, une troisième région (41) du premier type de conductivité à fort niveau de dopage. - Procédé de fabrication d'un dispositif semiconducteur selon la revendication 4, dans lequel la deuxième couche du deuxième type de conductivité est formée en même temps que des murs de diffusion latéraux formés à partir de la face arrière.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9601179 | 1996-01-26 | ||
FR9601179A FR2744287B1 (fr) | 1996-01-26 | 1996-01-26 | Composants lateraux dans un dispositif semiconducteur de puissance |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0786817A1 EP0786817A1 (fr) | 1997-07-30 |
EP0786817B1 true EP0786817B1 (fr) | 2004-09-22 |
Family
ID=9488698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97410010A Expired - Lifetime EP0786817B1 (fr) | 1996-01-26 | 1997-01-24 | Composants latéraux dans un dispositif semiconducteur de puissance |
Country Status (5)
Country | Link |
---|---|
US (1) | US5994171A (fr) |
EP (1) | EP0786817B1 (fr) |
JP (1) | JP4114212B2 (fr) |
DE (1) | DE69730761T2 (fr) |
FR (1) | FR2744287B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6104045A (en) * | 1998-05-13 | 2000-08-15 | Micron Technology, Inc. | High density planar SRAM cell using bipolar latch-up and gated diode breakdown |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3699406A (en) * | 1963-12-26 | 1972-10-17 | Gen Electric | Semiconductor gate-controlled pnpn switch |
JPS51116685A (en) * | 1975-04-05 | 1976-10-14 | Fujitsu Ltd | Semiconductor device |
JPS52150984A (en) * | 1976-06-10 | 1977-12-15 | Mitsubishi Electric Corp | Semiconductor device |
US4896196A (en) * | 1986-11-12 | 1990-01-23 | Siliconix Incorporated | Vertical DMOS power transistor with an integral operating condition sensor |
JPH0766975B2 (ja) * | 1988-12-09 | 1995-07-19 | サンケン電気株式会社 | 複合型ダイオード装置 |
FR2713400B1 (fr) * | 1993-11-29 | 1996-02-16 | Sgs Thomson Microelectronics | Composant de protection triangle. |
US5841197A (en) * | 1994-11-18 | 1998-11-24 | Adamic, Jr.; Fred W. | Inverted dielectric isolation process |
-
1996
- 1996-01-26 FR FR9601179A patent/FR2744287B1/fr not_active Expired - Fee Related
-
1997
- 1997-01-24 EP EP97410010A patent/EP0786817B1/fr not_active Expired - Lifetime
- 1997-01-24 DE DE69730761T patent/DE69730761T2/de not_active Expired - Fee Related
- 1997-01-24 JP JP02444097A patent/JP4114212B2/ja not_active Expired - Fee Related
- 1997-01-24 US US08/787,741 patent/US5994171A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69730761T2 (de) | 2005-09-29 |
FR2744287A1 (fr) | 1997-08-01 |
JPH09213959A (ja) | 1997-08-15 |
EP0786817A1 (fr) | 1997-07-30 |
FR2744287B1 (fr) | 1998-04-30 |
US5994171A (en) | 1999-11-30 |
DE69730761D1 (de) | 2004-10-28 |
JP4114212B2 (ja) | 2008-07-09 |
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