EP0675559B1 - Change-over switch for high frequency range - Google Patents
Change-over switch for high frequency range Download PDFInfo
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- EP0675559B1 EP0675559B1 EP19950104168 EP95104168A EP0675559B1 EP 0675559 B1 EP0675559 B1 EP 0675559B1 EP 19950104168 EP19950104168 EP 19950104168 EP 95104168 A EP95104168 A EP 95104168A EP 0675559 B1 EP0675559 B1 EP 0675559B1
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- output
- branch
- frequency range
- filters
- diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
Definitions
- the invention relates to a switch for the high frequency range according to the preamble of claim 1.
- Such switches include an entrance gate and two Exit gates and cause one coupled into the entrance gate Radio frequency signal (RF signal) depending from a control signal, alternatively to one of the output gates can be switched.
- RF signal Radio frequency signal
- Such switches are used especially in radar technology used in and are used in so-called T / R modules Field of application also SPDT switch ("Single Pole Double Throw ").
- SPDT switches are for the high frequency range, e.g. B. designed the gigahertz (GHz) range.
- the article by G.H. Nesbit et. al. described switch for the high frequency range has one entrance and two exit gates as well as one active semiconductor element with which one at the entrance gate applied high-frequency signal either to one of the two output gates can be switched.
- the switch is connected to the entrance gate with a waveguide one input branch and two output branches connected, the output branches each one by switching diodes have switchable high-frequency filter.
- the Switching diodes are polarized in opposite directions, so that only a DC bias voltage is required to power the two switching diodes in opposite RF switching states, i.e. Passing or blocking state to switch.
- the invention has for its object a generic Switch to specify the most lossless possible Switching an RF signal with high power enables with the highest possible insulation in the locked Branch and between the exit gates is present and the can be produced in a cost-effective and reliable manner.
- a first advantage of the invention is that in the X-band range (about 10 GHz) a structure with a performance compatibility Greater than or equal to 20 watts with insertion loss in the connected branch with small equal to 1.0 dB, greater isolation in the blocked branch equal to 30 dB, insulation between the output gates 30 dB or more and a standing wave ratio VSWR at all gates less than or equal to 2: 1 is possible.
- a second advantage is that it is mechanically compact as well as robust construction in hybrid circuit technology is possible.
- a third advantage is that for switching required diodes, e.g. PIN diodes, not directly lie in the RF signal path. Because of that he can't blocking branch (switched through) with very low insertion loss a very high RF output, for example 25 W, lead.
- required diodes e.g. PIN diodes
- the figure shows an exemplary circuit arrangement, which on a substrate, e.g. B. a ceramic substrate for a frequency range of e.g. B. 8 GHz can be produced.
- the Arrangement contains a specified frequency range and the RF power to be switched adapted y-branched Waveguide, whose input branch EZ to the entrance gate TO is coupled and which is at a branch point P1 branches into the two output branches AZ1, AZ2.
- Everyone Output branch AZ1, AZ2 contains for the specified frequency range a switchable filter, e.g. a band or Low pass filter.
- the diodes exist D1 to D4 and D1 'to D4' are preferably made of PIN diodes for the specified HF range.
- Two diode quartets are created D1 to D4 and D1 'to D4'. Every diode quartet contains two diode pairs D1, D4 and D2, D3 or D1 ', D4' and D2 ', D3'. With each pair of diodes the associated diodes on opposite sides of the associated output waveguide. With every quartet of diodes are similar connections, e.g.
- Anodes connected to the associated output waveguide while the other connections (cathodes) at reference potential (Mass) lie.
- the diodes are opposite polarized so that depending on the switching voltage UB always a filter, e.g. B. in the output branch AZ1, in the Passband can be switched while the other Filters, e.g. B. in the output branch AZ2, in the locked state is switched.
- a filter e.g. B. in the output branch AZ1
- Filters e.g. B. in the output branch AZ2
- the RF power coupled into the EZ input branch is then advantageously almost lossless in the other output branch to the corresponding one Exit gate led.
- the switching voltage UB a DC voltage
- causes a direct current, which via filters L, C or L ', C' is supplied to the circuit points P2, P2 '.
- These are with the associated diode quartets over each a line S or S ', which at the same time a Filter determining component is coupled.
- the Switching points P2, P2 ' are grounded for the HF signal (capacitive short circuit).
- these circuit points can P2, P2 'via an inductive feed line (L, L') Control voltage for the diode quartets are applied.
- the arrangement described also has the advantage that by those present in the output branches AZ1, AZ2 switchable filter, the z. B. in a so-called quasi-lumped element design are executed in the RF signal on Input gate TO suppresses any harmonics present become.
- the frequency range of 8 GHz to 12 GHz is with the arrangement described an RF power of 20 watts or greater to be switched insertion loss of less than or equal in continuous operation 0.6 dB achievable (measured between an unlocked Exit gate and the entrance gate TO).
- the RF isolation in the blocked output branch greater than 35 dB.
- the RF isolation between the output gates T1, T2 is greater than 35 dB.
- T1, T2 is advantageous a very low standing wave ratio available, e.g. B. VSWR is less than or equal to 1.1: 1.
- the invention is not limited to the example described, but applicable to others.
- a specialist is familiar with each of them selected RF range a matched waveguide structure as well as corresponding switching diodes (diode quartets) to choose.
Description
Die Erfindung betrifft einen Umschalter für den Hochfrequenzbereich nach dem Oberbegriff des Patentanspruchs 1.The invention relates to a switch for the high frequency range according to the preamble of claim 1.
Ein solcher Umschalter ist bereits aus dem Artikel von G.H. Nesbit, J-C. Chen, C.P. Wen, D.W. Wong: "Monolithic Transmit/Receive Switch for Millimeter-Wave Application"; in: GaAs IC Symposium 1987, Technical Digest, Portland, USA, 13. October 1987 - 16. October 1987, Seiten 147-148, bekannt.Such a switch is already from the article by G.H. Nesbit, J-C. Chen, C.P. Wen, D.W. Wong: "Monolithic Transmit / Receive Switch for Millimeter-Wave Application "; in: GaAs IC Symposium 1987, Technical Digest, Portland, USA, October 13, 1987 - October 16, 1987, pages 147-148, known.
Solche Umschalter enthalten ein Eingangstor sowie zwei Ausgangstore und bewirken, daß ein in das Eingangstor eingekoppeltes Hochfrequenzsignal (HF-Signal) in Abhängigkeit von einem Steuersignal, alternativ auf eines der Ausgangstore geschaltet werden kann.Such switches include an entrance gate and two Exit gates and cause one coupled into the entrance gate Radio frequency signal (RF signal) depending from a control signal, alternatively to one of the output gates can be switched.
Solche Umschalter werden insbesondere in der Radartechnik in sogenannten T/R-Modulen verwendet und werden in diesem Anwendungsbereich auch SPDT-Schalter ("Single Pole Double Throw") genannt. Solche SPDT-Schalter sind für den Höchstfrequenzbereich, z. B. den Gigahertz(GHz)-Bereich ausgelegt.Such switches are used especially in radar technology used in and are used in so-called T / R modules Field of application also SPDT switch ("Single Pole Double Throw "). Such SPDT switches are for the high frequency range, e.g. B. designed the gigahertz (GHz) range.
Der in dem eingangs zitierten Artikel von G.H. Nesbit et. al. beschriebene Umschalter für den Hochfrequenzbereich weist ein Eingangs- und zwei Ausgangstore auf sowie ein aktives Halbleiterelement, mit dem ein am Eingangstor anliegendes Hochfrequenzsignal wahlweise auf eines der beiden Ausgangstore geschaltet werden kann. Bei diesem Umschalter ist an das Eingangstor ein Wellenleiter mit einem Eingangszweig und zwei Ausgangszweigen angeschlossen, wobei die Ausgangszweige jeweils ein durch Schaltdioden schaltbares Hochfrequenzfilter aufweisen. Die Schaltdioden sind entgegengesetzt gepolt, so daß lediglich ein DC-Biasspannung erforderlich ist, um die beiden Schaltdioden in entgegengesetzte HF-Schaltzustände, d.h. Durchlaß- oder Sperrzustand, zu schalten.The article by G.H. Nesbit et. al. described switch for the high frequency range has one entrance and two exit gates as well as one active semiconductor element with which one at the entrance gate applied high-frequency signal either to one of the two output gates can be switched. With this The switch is connected to the entrance gate with a waveguide one input branch and two output branches connected, the output branches each one by switching diodes have switchable high-frequency filter. The Switching diodes are polarized in opposite directions, so that only a DC bias voltage is required to power the two switching diodes in opposite RF switching states, i.e. Passing or blocking state to switch.
Ähnliche Umschalter sind aus US-A-4,502,027 bzw. US-A-4,078,217 bekannt.Similar switches are from US-A-4,502,027 and US-A-4,078,217, respectively known.
Der Erfindung liegt die Aufgabe zugrunde, einen gattungsgemäßen Umschalter anzugeben, der ein möglichst verlustloses Schalten eines HF-Signales mit hoher Leistung ermöglicht, wobei eine möglichst hohe Isolation im gesperrten Zweig und zwischen den Ausgangstoren vorhanden ist und der in kostengünstiger und zuverlässiger Weise herstellbar ist.The invention has for its object a generic Switch to specify the most lossless possible Switching an RF signal with high power enables with the highest possible insulation in the locked Branch and between the exit gates is present and the can be produced in a cost-effective and reliable manner.
Diese Aufgabe wird gelöst durch die im kennzeichnenden Teil des Patentanspruchs 1 angegebenen Merkmale. Vorteilhafte Ausgestaltungen und/oder Weiterbildungen sind den Unteransprüchen entnehmbar.This problem is solved by the in the characterizing part of claim 1 specified features. Beneficial Refinements and / or further developments are the Removable subclaims.
Ein erster Vorteil der Erfindung besteht darin, daß im X-Band-Bereich (ungefähr 10 GHz) ein Aufbau mit einer Leistungsverträglichkeit größer gleich 20 Watt bei einer Einfügungsdämpfung im durchgeschalteten Zweig mit kleiner gleich 1,0 dB, einer Isolation im gesperrten Zweig größer gleich 30 dB, einer Isolation zwischen den Ausgangstoren größer gleich 30 dB sowie einem Stehwellenverhältnis VSWR an allen Toren kleiner gleich 2:1 möglich ist.A first advantage of the invention is that in the X-band range (about 10 GHz) a structure with a performance compatibility Greater than or equal to 20 watts with insertion loss in the connected branch with small equal to 1.0 dB, greater isolation in the blocked branch equal to 30 dB, insulation between the output gates 30 dB or more and a standing wave ratio VSWR at all gates less than or equal to 2: 1 is possible.
Ein zweiter Vorteil besteht darin, daß ein mechanisch kompakter sowie robuster Aufbau in hybrider Schaltungstechnologie möglich ist. A second advantage is that it is mechanically compact as well as robust construction in hybrid circuit technology is possible.
Ein dritter Vorteil besteht darin, daß die für den Schaltvorgang erforderlichen Dioden, z.B. PIN-Dioden, nicht direkt in dem HF-Signalweg liegen. Dadurch kann der nicht sperrende (durchgeschaltete) Zweig bei sehr geringer Einfügungsdämpfung eine sehr hohe Hf-Leistung, beispielsweise 25 W, führen.A third advantage is that for switching required diodes, e.g. PIN diodes, not directly lie in the RF signal path. Because of that he can't blocking branch (switched through) with very low insertion loss a very high RF output, for example 25 W, lead.
Weitere Vorteile ergeben sich aus der nachfolgenden Beschreibung.Further advantages result from the description below.
Die Erfindung wird im folgenden anhand eines Ausführungsbeispieles unter Bezugnahme auf eine schematisch dargestellte Figur näher erläutert.The invention is described below using an exemplary embodiment with reference to a schematically illustrated Figure explained in more detail.
Die Figur zeigt eine exemplarische Schaltungsanordnung, die auf einem Substrat, z. B. einem Keramiksubstrat, für einen Frequenzbereich von z. B. 8 GHz herstellbar ist. Die Anordnung enthält einen an den angegebenen Frequenzbereich und die zu schaltende HF-Leistung angepaßten y-förmig verzweigten Wellenleiter, dessen Eingangszweig EZ an das Eingangstor TO angekoppelt ist und der sich an einem Verzweigungspunkt P1 in die beiden Ausgangszweige AZ1, AZ2 verzweigt. Diese führen zu Ausgangstoren T1, T2, an denen die am Eingangstor EZ eingekoppelte HF-Leistung je nach Schaltzustand alternativ ausgekoppelt werden kann. Jeder Ausgangszweig AZ1, AZ2 enthält für den angegebenen Frequenzbereich ein schaltbares Filter, z.B ein Band- oder Tiefpaßfilter. Dieses besteht im wesentlichen aus dem Ausgangswellenleiter AZ1, bzw. AZ2, in den jeweils eine durch eine Schaltspannung UB schaltbare Diodenanordnung D1 bis D4 bzw. D1' bis D4' eingefügt ist. Dabei bestehen die Dioden D1 bis D4 sowie D1' bis D4' vorzugsweise aus PIN-Dioden für den angegebenen HF-Bereich. Es entstehen zwei Dioden-Quartette D1 bis D4 sowie D1' bis D4'. Jedes Dioden-Quartett enthält zwei Dioden-Paare D1, D4 sowie D2, D3 bzw. D1', D4' sowie D2', D3'. Bei jedem Dioden-Paar liegen die zugehörigen Dioden auf gegenüberliegenden Seiten des zugehörigen Ausgangswellenleiters. Bei jedem Dioden-Quartett sind jeweils gleichartige Anschlüsse, z.B. Anoden, mit dem zugehörigem Ausgangswellenleiter verbunden, während die jeweils andern Anschlüsse (Kathoden) auf Bezugspotential (Masse) liegen. In jedem Dioden-Quartett D1 bis D4 bzw. D1' bis D4' sind die Dioden entgegengesetzt gepolt, so daß in Abhängigkeit von der Schaltspannung UB immer ein Filter, z. B. im Ausgangszweig AZ1, in den Durchlaßbereich geschaltet werden kann, während das andere Filter, z. B. im Ausgangszweig AZ2, in den Sperrzustand geschaltet ist. Durch Änderung der Schaltspannung UB werden entgegengesetzte Schaltzustände der Filter erreicht. So sind z.B. in dem ersten Dioden-Quartett D1 bis D4 alle Kathoden mit dem zugehörigen Ausgangszweig AZ1 verbunden, während die Anoden auf Masse liegen. Bei dem zweiten Dioden-Quartett sind die Dioden entgegengesetzt geschaltet. Dadurch wird also vorteilhafterveise lediglich eine einzige Schaltspannung UB benötigt, die ermöglicht, daß die Filter in den Ausgangszweigen immer entgegengesetzte Schaltzustände für das HF-Signal besitzen. Durch eine von dem verwendeten Frequenzbereich abhängige Wahl des Abstandes der Dioden-Paare innerhalb eines Dioden-Quartettes ist eine Art Schaltungspolarität des betreffenden Dioden-Quartettes einstellbar. So ist es beispielsweise möglich, den Abstand zwischen den zwei Dioden-Paaren so zu wählen, daß bei hochohmig geschalteten Dioden (für das HF-Signal), innerhalb eines Dioden-Quartettes, dieses durchlässig wird für das anligende HF-Signal, das heißt, das Filter ist in den Durchlaßzustand geschaltet. Im Sperrzustand wirkt jedes Filter als Kurzschluß für das HF-Signal. Dieser Kurzschluß wird so transformiert, daß an dem Verzweigungspunkt P1 ein Leerlauf für den betreffenden Ausgangszweig entsteht. Die in den Eingangszweig EZ eingekoppelte HF-Leistung wird dann vorteilhafterveise nahezu verlustlos in den jeweils anderen Ausgangszweig zu dem entsprechenden Ausgangstor geführt. Die Schaltspannung UB, eine Gleichspannung, bewirkt einen Gleichstrom, der über Filter L, C bzw. L', C' den Schaltungspunkten P2, P2' zugeführt wird. Diese sind mit den zugehörigen Diodenquartetten über jeweils eine Leitung S bzw. S', die gleichzeitig ein das Filter bestimmender Bestandteil ist, gekoppelt. Die Schaltungspunkte P2, P2' liegen für das HF-Signal an Masse (kapazitiver Kurzschluß). Somit kann an diese Schaltungspunkte P2, P2' über eine induktive Zuleitung (L, L') die Steuerspannung für die Diodenquartette angelegt werden.The figure shows an exemplary circuit arrangement, which on a substrate, e.g. B. a ceramic substrate for a frequency range of e.g. B. 8 GHz can be produced. The Arrangement contains a specified frequency range and the RF power to be switched adapted y-branched Waveguide, whose input branch EZ to the entrance gate TO is coupled and which is at a branch point P1 branches into the two output branches AZ1, AZ2. These lead to exit gates T1, T2 at which the HF power coupled in at the EZ entrance gate depending on Switching state can alternatively be coupled out. Everyone Output branch AZ1, AZ2 contains for the specified frequency range a switchable filter, e.g. a band or Low pass filter. This essentially consists of the output waveguide AZ1, or AZ2, one in each a switching voltage UB switchable diode arrangement D1 to D4 or D1 'to D4' is inserted. The diodes exist D1 to D4 and D1 'to D4' are preferably made of PIN diodes for the specified HF range. Two diode quartets are created D1 to D4 and D1 'to D4'. Every diode quartet contains two diode pairs D1, D4 and D2, D3 or D1 ', D4' and D2 ', D3'. With each pair of diodes the associated diodes on opposite sides of the associated output waveguide. With every quartet of diodes are similar connections, e.g. Anodes, connected to the associated output waveguide while the other connections (cathodes) at reference potential (Mass) lie. In every diode quartet D1 to D4 or D1 'to D4' the diodes are opposite polarized so that depending on the switching voltage UB always a filter, e.g. B. in the output branch AZ1, in the Passband can be switched while the other Filters, e.g. B. in the output branch AZ2, in the locked state is switched. By changing the switching voltage UB opposite switching states of the filters reached. For example, in the first diode quartet D1 to D4 all Cathodes connected to the associated output branch AZ1, while the anodes are on ground. The second diode quartet the diodes are switched in opposite directions. This advantageously only makes one Switching voltage UB required, which enables the Filters in the output branches always opposite Have switching states for the RF signal. By one of choice of distance depending on the frequency range used of the diode pairs within a diode quartet a kind of circuit polarity of the diode quartet in question adjustable. For example, it is possible Select the distance between the two pairs of diodes so that with high-resistance diodes (for the RF signal), inside of a diode quartet that becomes transparent for the incoming RF signal, that is, the filter is in switched the on state. Everybody works in the locked state Filter as a short circuit for the RF signal. This short circuit is transformed so that at the branch point P1 there is an idle for the relevant output branch. The RF power coupled into the EZ input branch is then advantageously almost lossless in the other output branch to the corresponding one Exit gate led. The switching voltage UB, a DC voltage, causes a direct current, which via filters L, C or L ', C' is supplied to the circuit points P2, P2 '. These are with the associated diode quartets over each a line S or S ', which at the same time a Filter determining component is coupled. The Switching points P2, P2 'are grounded for the HF signal (capacitive short circuit). Thus, these circuit points can P2, P2 'via an inductive feed line (L, L') Control voltage for the diode quartets are applied.
Die beschriebene Anordnung hat außerdem den Vorteil, daß durch die in den Ausgangszweigen AZ1, AZ2 vorhandenen schaltbaren Filter, die z. B. in einem sogenannten Quasi-Lumped-Element-Design ausgeführt sind, in dem HF-Signal am Eingangstor TO möglicherweise vorhandenen Harmonischen unterdrückt werden.The arrangement described also has the advantage that by those present in the output branches AZ1, AZ2 switchable filter, the z. B. in a so-called quasi-lumped element design are executed in the RF signal on Input gate TO suppresses any harmonics present become.
Bei einem Ausführungsbeispiel für den Frequenzbereich von 8 GHz bis 12 GHz ist mit der beschriebenen Anordnung bei einer zu schaltenden HF-Leistung von größer gleich 20 Watt im Dauerbetrieb eine Einfügungsdämpfung von kleiner gleich 0,6 dB erreichbar (gemessen zwischen einem nicht gesperrten Ausgangstor sowie dem Eingangstor TO). Dabei ist die HF-Isolation in dem jeweils gesperrten Ausgangszweig größer 35 dB. Die HF-Isolation zwischen den Ausgangstoren T1, T2 ist größer 35 dB. An jedem Tor T0, T1, T2 ist vorteilhafterweise ein sehr geringes Stehwellenverhältnis vorhanden, z. B. ist VSWR kleiner gleich 1,1:1.In one embodiment for the frequency range of 8 GHz to 12 GHz is with the arrangement described an RF power of 20 watts or greater to be switched insertion loss of less than or equal in continuous operation 0.6 dB achievable (measured between an unlocked Exit gate and the entrance gate TO). Here is the RF isolation in the blocked output branch greater than 35 dB. The RF isolation between the output gates T1, T2 is greater than 35 dB. At each gate T0, T1, T2 is advantageous a very low standing wave ratio available, e.g. B. VSWR is less than or equal to 1.1: 1.
Die Erfindung ist nicht auf das beschriebene Beispiel beschränkt, sondern sinngemäß auf weitere anwendbar. Beispielsweise ist es einem Fachmann geläufig, bei jedem zu wählenden HF-Bereich eine daran angepaßte Wellenleiterstruktur sowie entsprechende Schaltdioden (Diodenquartette) zu wählen.The invention is not limited to the example described, but applicable to others. For example a specialist is familiar with each of them selected RF range a matched waveguide structure as well as corresponding switching diodes (diode quartets) to choose.
Claims (3)
- Changeover switch for the high-frequency range, in which a waveguide structure comprises a branch point (P1), a receiving branch (EZ) leading to an input gate (TO) and two output branches (AZ1, AZ2) each leading to a respective output gate (T1, T2), and switchable HF filters with oppositely poled diodes (D1 to D4, D1' to D4') are arranged in the output branches and by loading with a switching voltage (UB) respectively block one of the output branches for HF signals and free the respective other output branch, characterised in that the HF filters are each acted on by the switching voltage (UB) by way of a respective one of two separate feeds (S), which are constructed as control waveguides and which for HF signals are capacitively short-circuited relative to ground and at the same time are component of the filter.
- Changeover switch according to claim 1, characterised in that the filters are executed in a quasi-lumped-element design.
- Changeover switch according to one of the preceding claims, characterised in that the waveguides of the output branches (AZ1, AZ2) are curved at the branch point (P1) and that the waveguide of the input branch (EZ) is coupled to the crest of the curve.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4411250 | 1994-03-31 | ||
| DE4411250 | 1994-03-31 | ||
| DE19503300A DE19503300A1 (en) | 1994-03-31 | 1995-02-02 | Switch for the high frequency range |
| DE19503300 | 1995-02-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0675559A1 EP0675559A1 (en) | 1995-10-04 |
| EP0675559B1 true EP0675559B1 (en) | 2000-05-24 |
Family
ID=25935275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP19950104168 Expired - Lifetime EP0675559B1 (en) | 1994-03-31 | 1995-03-22 | Change-over switch for high frequency range |
Country Status (1)
| Country | Link |
|---|---|
| EP (1) | EP0675559B1 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4031488A (en) * | 1976-04-05 | 1977-06-21 | The United States Of America As Represented By The Secretary Of The Navy | Multiple polarization switch |
| US4502027A (en) * | 1982-03-01 | 1985-02-26 | Raytheon Company | Bidirectional switch |
-
1995
- 1995-03-22 EP EP19950104168 patent/EP0675559B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0675559A1 (en) | 1995-10-04 |
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