EP0649184B1 - Arrangement for the radiation of millimeter waves - Google Patents
Arrangement for the radiation of millimeter waves Download PDFInfo
- Publication number
- EP0649184B1 EP0649184B1 EP94115637A EP94115637A EP0649184B1 EP 0649184 B1 EP0649184 B1 EP 0649184B1 EP 94115637 A EP94115637 A EP 94115637A EP 94115637 A EP94115637 A EP 94115637A EP 0649184 B1 EP0649184 B1 EP 0649184B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- carrier plate
- substrate
- arrangement according
- heat sink
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/18—Resonant slot antennas the slot being backed by, or formed in boundary wall of, a resonant cavity ; Open cavity antennas
Definitions
- the invention relates to an arrangement for emitting Millimeter waves.
- Such an arrangement is, for example, from IEEE Microwave and Guided Wave Letters, Vol. 3, April 93, p. 95-97, "Active Cavity-Backed Slot Antenna Using MESFETs" by H.P. Moyer and R.A. York known.
- a GaAs MESFET is included as an oscillator arrangement at 10 GHz a planar antenna and matching network combined.
- the invention has for its object an arrangement for the emission of millimeter waves with further improved To indicate efficiency.
- the invention makes use of the knowledge that a rapid discharge of those occurring in the active semiconductor component Power loss the efficiency of the component improved and is particularly advantageous for oscillator arrangements with higher operating frequencies on silicon substrates.
- the invention is based on exemplary embodiments illustrated in detail with reference to the figure, in which the individual parts of the arrangement are sketched together.
- a semiconductor substrate S preferably silicon a mm-wave diode D, for example an IMPATT diode realized as an active semiconductor component and with a integrated slot resonator SR to an integrated Transmission arrangement supplemented.
- the substrate will with which contains the diode and the slot resonator structure end side (layer side) attached to a support plate T. ("upside down").
- the side facing the substrate the carrier plate T carries the for connecting the transmitter assembly required supply structure V.
- This supply structure is preferably in one etching process from a full-surface metallization of the support plate.
- the substrate S is attached to the carrier plate T.
- bonding thermal compression
- soldering can also be done by other connection techniques for example, soldering.
- the thermal conductivity of the material of the carrier plate is advantageously greater than 1 W / cm.K.
- the thermal conductivity of the plate material is greater than that of the substrate material.
- the carrier plate is on a heat sink W attached, in which a cavity resonator is formed is.
- the heat sink W is a copper block, for example.
- the cavity resonator in the heat sink will advantageously through a cylindrical hole L in the Copper block is formed, the one facing away from the carrier plate Side with an electrically conductive cover film F is completed, e.g. by soldering with the Copper block is connected.
- the final film is there preferably made of gold or copper.
- the carrier plate advantageously has an opening K on, through which the slot antenna SR of the substrate S. the cavity is coupled.
- the breakthrough is in Shape and size adapted to the antenna element of the substrate and preferably slightly larger than this. Of the Breakthrough is preferably centered over the cavity resonator positioned.
- the antenna SR of the substrate is on adjusted the opening of the carrier plate.
- the walls of the opening K and the are preferably side of the carrier plate T facing the resonator continuously electrically conductive, e.g. through an evaporated metal layer, so that a shaft coupling into a carrier plate made of dielectric material is avoided.
- the Carrier plate can also be made of metal, e.g. Copper, then isolation from the substrate and between the separate conductors of the supply structure must be, e.g. through an additional insulation layer on the metallic carrier plate.
- AlN As a dielectric material for the carrier plate is advantageous AlN chosen, which has good thermal conductivity (1.7 W / cm. K) and one to silicon as the substrate material has similar coefficients of thermal expansion.
- the carrier plate is a good heat conductor on the heat sink attached, e.g. by soft soldering.
- the final film, the Walls of the cylindrical hole L in the heat sink and the side of the carrier plate facing the heat sink the walls of the opening K form as good electrical surfaces connected to one another in a conductive manner the cavity whose resonance frequency at least approximately with the Resonance frequency of the oscillator arrangement on the substrate matches.
- the operating frequency through the cavity resonator be coordinated and stabilized.
- the transmission power is primarily emitted by the Substrate, which is due to the "upside down" arrangement in the Invention is further favored.
- this arrangement in conjunction with the breakthrough through the Carrier plate a defined coupling to the cavity resonator guaranteed.
- the arrangement is particularly favorable for the dissipation of the power loss through the short Path to the heat-dissipating carrier plate, which is also called Part of a multi-part heat sink T, W, F can be considered can.
- the side facing away from the carrier plate can be used for Beam shaping and / or polarization adjustment geometrically structured, e.g. through a relief or a structured layer.
- the basic idea of the invention is not based on limits the frequency range of the mm waves.
Description
Die Erfindung betrifft eine Anordnung zur Abstrahlung von Millimeterwellen.The invention relates to an arrangement for emitting Millimeter waves.
Eine derartige Anordnung ist beispielsweise aus IEEE Microwave and Guided Wave Letters, Vol. 3, April 93, S. 95-97, " Active Cavity-Backed Slot Antenna Using MESFETs" von H.P. Moyer und R.A. York bekannt. Durch die Kopplung der Antenne mit dem Hohlraumresonator wird die Leistungsabstrahlung erhöht und das Antennendiagramm verbessert. Als Oszillatoranordnung bei 10 GHz ist ein GaAs-MESFET mit einem planaren Antennen- und Anpassungsnetzwerk kombiniert. Such an arrangement is, for example, from IEEE Microwave and Guided Wave Letters, Vol. 3, April 93, p. 95-97, "Active Cavity-Backed Slot Antenna Using MESFETs" by H.P. Moyer and R.A. York known. Through the coupling the antenna with the cavity resonator is the power radiation increased and the antenna pattern improved. A GaAs MESFET is included as an oscillator arrangement at 10 GHz a planar antenna and matching network combined.
Der Erfindung liegt die Aufgabe zugrunde, eine Anordnung zur Abstrahlung von Millimeterwellen mit weiter verbessertem Wirkungsgrad anzugeben.The invention has for its object an arrangement for the emission of millimeter waves with further improved To indicate efficiency.
Die Erfindung ist im Patentanspruch 1 beschrieben. Die Unteransprüche enthalten vorteilhafte Ausgestaltungen und Weiterbildungen der Erfindung.The invention is described in claim 1. The subclaims contain advantageous configurations and Developments of the invention.
Die Erfindung macht sich die Erkenntnis zunutze, daß eine schnelle Abführung der im aktiven Halbleiterbauelement anfallenden Verlustleistung den Wirkungsgrad des Bauelements verbessert und ist insbesondere vorteilhaft für Oszillator-Anordnungen mit höheren Betriebsfrequenzen auf Silizium-Substraten.The invention makes use of the knowledge that a rapid discharge of those occurring in the active semiconductor component Power loss the efficiency of the component improved and is particularly advantageous for oscillator arrangements with higher operating frequencies on silicon substrates.
Die Erfindung ist nachfolgend anhand von Ausführungsbeispielen unter Bezugnahme auf die Abbildung eingehend veranschaulicht, in der die einzelnen Teile der Anordnung vor dem Zusammenfügen skizziert sind.The invention is based on exemplary embodiments illustrated in detail with reference to the figure, in which the individual parts of the arrangement are sketched together.
Auf einem Halbleitersubstrat S, vorzugsweise Silizium, ist eine mm-Wellen-Diode D, beispielsweise eine IMPATT-Diode als aktives Halbleiterbauelement realisiert und mit einem integrierten Schlitzresonator SR zu einer integrierten Sendeanordnung ergänzt. Das Substrat wird mit der die Diode und die Schlitzresonatorstruktur enthalt enden Seite (Schichtseite) auf einer Trägerplatte T befestigt ("upside down"). Die dem Substrat zugewandte Seite der Trägerplatte T trägt die zum Anschluß der Sendeanordnung erforderliche Zuleitungsstruktur V. Diese Zuleitungsstruktur wird vorzugsweise in einem Atzvorgang aus einer ganzflächigen Metallisierung der Tragerplatte hergestellt. On a semiconductor substrate S, preferably silicon a mm-wave diode D, for example an IMPATT diode realized as an active semiconductor component and with a integrated slot resonator SR to an integrated Transmission arrangement supplemented. The substrate will with which contains the diode and the slot resonator structure end side (layer side) attached to a support plate T. ("upside down"). The side facing the substrate the carrier plate T carries the for connecting the transmitter assembly required supply structure V. This supply structure is preferably in one etching process from a full-surface metallization of the support plate.
Die Befestigung des Substrats S auf der Trägerplatte T erfolgt vorteilhafterweise durch Aufbonden (Thermokompression) kann aber auch durch andere Verbindungstechniken beispielsweise Löten vorgenommen werden.The substrate S is attached to the carrier plate T. advantageously by bonding (thermocompression) can also be done by other connection techniques for example, soldering.
Die Wärmeleitfähigkeit des Materials der Trägerplatte ist vorteilhafterweise größer als 1 W/cm.K. Vorzugsweise ist die Wärmeleitfähigkeit des Plattenmaterials größer als die des Substratmaterials. Die Trägerplatte ist auf einer Wärmesenke W befestigt, in welcher ein Hohlraumresonator ausgebildet ist. Die Wärmesenke W ist beispielsweise ein Kupferblock. Der Hohlraumresonator in der Wärmesenke wird vorteilhafterweise durch ein zylindrisches Loch L in dem Kupferblock gebildet, das auf der der Trägerplatte abgewandten Seite mit einer elektrisch leitenden Abschlußfolie F abgeschlossen ist, die z.B. durch Weichlöten mit dem Kupferblock verbunden ist. Die Abschlußfolie besteht vorzugsweise aus Gold oder Kupfer.The thermal conductivity of the material of the carrier plate is advantageously greater than 1 W / cm.K. Preferably the thermal conductivity of the plate material is greater than that of the substrate material. The carrier plate is on a heat sink W attached, in which a cavity resonator is formed is. The heat sink W is a copper block, for example. The cavity resonator in the heat sink will advantageously through a cylindrical hole L in the Copper block is formed, the one facing away from the carrier plate Side with an electrically conductive cover film F is completed, e.g. by soldering with the Copper block is connected. The final film is there preferably made of gold or copper.
Die Trägerplatte weist vorteilhafterweise einen Durchbruch K auf, durch den die Schlitz-Antenne SR des Substrats S an dem Hohlraumresonator gekoppelt ist. Der Durchbruch ist in Form und Größe an das Antennenelement des Substrats angepaßt und vorzugsweise geringfügig größer als dieses. Der Durchbruch ist vorzugsweise mittig über dem Hohlraumresonator positioniert. Die Antenne SR des Substrats wird auf den Durchbruch der Trägerplatte justiert.The carrier plate advantageously has an opening K on, through which the slot antenna SR of the substrate S. the cavity is coupled. The breakthrough is in Shape and size adapted to the antenna element of the substrate and preferably slightly larger than this. Of the Breakthrough is preferably centered over the cavity resonator positioned. The antenna SR of the substrate is on adjusted the opening of the carrier plate.
Vorzugsweise sind die Wandungen des Durchbruchs K und die dem Resonator zugewandte Seite der Trägerplatte T durchgehend elektrisch leitend, z.B. durch eine aufgedampfte Metallschicht, so daß eine Welleneinkopplung in eine Trägerplatte aus dielektrischem Material vermieden wird. Die Trägerplatte kann auch aus Metall, z.B. Kupfer bestehen, wobei dann die Isolation gegenüber dem Substrat und zwischen den getrennten Leitern der Zuleitungsstruktur gewährleistet sein muß, z.B. durch eine zusätzliche Isolationsschicht auf der metallischen Trägerplatte.The walls of the opening K and the are preferably side of the carrier plate T facing the resonator continuously electrically conductive, e.g. through an evaporated metal layer, so that a shaft coupling into a carrier plate made of dielectric material is avoided. The Carrier plate can also be made of metal, e.g. Copper, then isolation from the substrate and between the separate conductors of the supply structure must be, e.g. through an additional insulation layer on the metallic carrier plate.
Als dielektrisches Material für die Trägerplatte ist vorteilhafterweise AlN gewählt, welches eine gute Wärmeleitfähigkeit (1,7 W/cm. K) und einen zu Silizium als Substratmaterial ähnlichen Wärmeausdehnungskoeffizienten aufweist.As a dielectric material for the carrier plate is advantageous AlN chosen, which has good thermal conductivity (1.7 W / cm. K) and one to silicon as the substrate material has similar coefficients of thermal expansion.
Die Trägerplatte wird gut wärmeleitend auf der Wärmesenke befestigt, z.B. durch Weichlöten. Die Abschlußfolie, die Wandungen des zylindrischen Lochs L in der Wärmesenke und die der Wärmesenke zugewandte Seite der Trägerplatte mit den Wandungen des Durchbruchs K bilden als elektrisch gut leitend miteinander verbundene Flächen den Hohlraumresonator dessen Resonanzfrequenz zumindest annähernd mit der Resonanzfrequenz der Oszillatoranordnung auf dem Substrat übereinstimmt. Innerhalb des Ziehbereichs der Oszillatoranordnung kann die Betriebsfrequenz durch den Hohlraumresonator abgestimmt und stabilisiert werden.The carrier plate is a good heat conductor on the heat sink attached, e.g. by soft soldering. The final film, the Walls of the cylindrical hole L in the heat sink and the side of the carrier plate facing the heat sink the walls of the opening K form as good electrical surfaces connected to one another in a conductive manner the cavity whose resonance frequency at least approximately with the Resonance frequency of the oscillator arrangement on the substrate matches. Within the pull range of the oscillator assembly can the operating frequency through the cavity resonator be coordinated and stabilized.
Die Abstrahlung der Sendeleistung erfolgt primär durch das Substrat, was durch die "upside down"-Anordnung bei der Erfindung weiter begünstigt wird. Außerdem wird durch diese Anordnung in Verbindung mit dem Durchbruch durch die Trägerplatte eine definierte Ankopplung an den Hohlraumresonator gewährleistet. Insbesondere ist die Anordnung günstig für die Abfuhr der Verlustleistung durch den kurzen Weg zu der wärmeableitenden Trägerplatte, die auch als Teil einer mehrteiligen Wärmesenke T, W, F betrachtet werden kann. Die der Trägerplatte abgewandte Seite kann zur Strahlformung und/oder Polarisationseinstellung geometrisch strukturiert werden, z.B. durch ein Relief oder eine strukturierte Schicht.The transmission power is primarily emitted by the Substrate, which is due to the "upside down" arrangement in the Invention is further favored. In addition, through this arrangement in conjunction with the breakthrough through the Carrier plate a defined coupling to the cavity resonator guaranteed. The arrangement is particularly favorable for the dissipation of the power loss through the short Path to the heat-dissipating carrier plate, which is also called Part of a multi-part heat sink T, W, F can be considered can. The side facing away from the carrier plate can be used for Beam shaping and / or polarization adjustment geometrically structured, e.g. through a relief or a structured layer.
Für eine auf einem Siliziumsubstrat realisierte Oszillatoranordnung für eine Betriebsfrequenz im Frequenzbereich zwischen 60 GHz und 80 GHz wurde eine Trägerplatte aus AlN mit einer Plattendicke zwischen 0,1 mm und 0,5 mm, einer Tiefe des Hohlraumresonators von ca. 3 mm und einer 0,1 mm dicken Goldfolie als Abschlußfolie gewählt.For an oscillator arrangement realized on a silicon substrate for an operating frequency in the frequency range between 60 GHz and 80 GHz was a carrier plate made of AlN with a plate thickness between 0.1 mm and 0.5 mm, one Depth of the cavity resonator of approx. 3 mm and a 0.1 mm thick gold foil chosen as the final foil.
Der Grundgedanke der Erfindung ist prinzipiell nicht auf den Frequenzbereich der mm-Wellen beschränkt.In principle, the basic idea of the invention is not based on limits the frequency range of the mm waves.
Claims (7)
- Arrangement for the radiation of millimetre waves with an active semiconductor component on a substrate, an antenna element and a cavity resonator, characterised by the following features:a) the cavity resonator is constructed in a heat sink,b) the side of the substrate carrying the semiconductor component faces the resonator,c) a carrier plate of material having good thermal conductivity is arranged between the substrate and the heat sink, andd) substrate, plate and heat sink are connected together in a manner with good thermal conductivity.
- Arrangement according to claim 1, characterised thereby that the carrier plate has a break-through between antenna element and cavity resonator.
- Arrangement according to claim 2, characterised thereby that the walls of the break-through and the side of the carrier plate facing the resonator are continuously electrically conductive.
- Arrangement according to one of claims 1 to 3, characterised thereby that the thermal conductivity of the material of the carrier plate is greater than 1 W/cm.K.
- Arrangement according to one of claims 1 to 4, characterised thereby that the thermal conductivity of the material of the carrier plate is greater than that of the substrate material.
- Arrangement according to one of claims 1 to 5, characterised thereby that the heat sink is a plate with a cylindrical passage opening, which is closed at the side remote from the carrier plate by an electrically conductive closure foil.
- Arrangement according to one of claims 1 to 6, characterised thereby that the substrate is an IMPATT diode and an integrated slot antenna.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4335232A DE4335232A1 (en) | 1993-10-15 | 1993-10-15 | Arrangement for the emission of millimeter waves |
| DE4335232 | 1993-10-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0649184A2 EP0649184A2 (en) | 1995-04-19 |
| EP0649184A3 EP0649184A3 (en) | 1995-06-28 |
| EP0649184B1 true EP0649184B1 (en) | 1998-12-30 |
Family
ID=6500264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP94115637A Expired - Lifetime EP0649184B1 (en) | 1993-10-15 | 1994-10-05 | Arrangement for the radiation of millimeter waves |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0649184B1 (en) |
| CA (1) | CA2117839C (en) |
| DE (2) | DE4335232A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3289572B2 (en) * | 1995-09-19 | 2002-06-10 | 株式会社村田製作所 | Chip antenna |
| DE19614286C1 (en) * | 1996-04-11 | 1997-09-25 | Daimler Benz Ag | Coupling device for coupling resonator and connection lead |
| CN110859981A (en) * | 2019-12-23 | 2020-03-06 | 湖州拉杜拉塔服饰有限公司 | Disinfection and sterilization treatment method for finished children's garment |
| CN111184879B (en) * | 2020-03-05 | 2021-04-23 | 南京中铭瑞邦动力科技有限公司 | High-temperature and high-speed air decontamination device and decontamination method |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2259451A1 (en) * | 1974-01-29 | 1975-08-22 | Radiotechnique Compelec | Centimetric frequency cavity oscillator - employs variable capacity diodes to control frequency |
| FR2346897A1 (en) * | 1975-01-22 | 1977-10-28 | Thomson Csf | HYPERFREQUENCY MILLIMETRIC CIRCUIT |
| US3969689A (en) * | 1975-04-07 | 1976-07-13 | General Dynamics Corporation | Dual diode oscillator and airstrip transmission line apparatus |
| DE2744883C3 (en) * | 1977-10-05 | 1981-05-27 | Endress U. Hauser Gmbh U. Co, 7867 Maulburg | Arrangement for generating and emitting microwaves |
| FR2536586B1 (en) * | 1982-11-23 | 1986-01-24 | Thomson Csf | PRE-ADAPTED MODULE FOR HIGH THERMAL DISSIPATION MICROWAVE DIODE |
| DE3323963A1 (en) * | 1983-07-02 | 1985-01-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Arrangement for stabilising the temperature of semiconductor oscillators in waveguide technology, particularly for millimetre waves |
| GB2252452B (en) * | 1985-09-05 | 1992-12-16 | Plessey Co Plc | Improvements in or relating to hybrid structures |
| DE3613258C2 (en) * | 1986-04-19 | 2002-06-13 | Daimler Chrysler Ag | Millimeter wave circuit assembly |
| US5155050A (en) * | 1987-06-26 | 1992-10-13 | Texas Instruments Incorporated | Method of fabrication of a monolithic microwave transmitter/receiver |
| DE3914525C2 (en) * | 1989-05-02 | 1999-02-04 | Daimler Benz Aerospace Ag | Microwave receiver |
| DE3922165C2 (en) * | 1989-07-06 | 1995-09-21 | Daimler Benz Aerospace Ag | Planar broadband antenna arrangement |
| US5043796A (en) * | 1990-02-06 | 1991-08-27 | Motorola, Inc. | Isolating multiple device mount with stress relief |
| US5083132A (en) * | 1990-04-30 | 1992-01-21 | Matsushita Electric Works, Ltd. | Planar antenna with active circuit block |
| US5202752A (en) * | 1990-05-16 | 1993-04-13 | Nec Corporation | Monolithic integrated circuit device |
| DE4017181C2 (en) * | 1990-05-29 | 1998-08-27 | Daimler Benz Aerospace Ag | Electrical component |
-
1993
- 1993-10-15 DE DE4335232A patent/DE4335232A1/en not_active Withdrawn
-
1994
- 1994-10-05 DE DE59407555T patent/DE59407555D1/en not_active Expired - Fee Related
- 1994-10-05 EP EP94115637A patent/EP0649184B1/en not_active Expired - Lifetime
- 1994-10-11 CA CA002117839A patent/CA2117839C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2117839A1 (en) | 1995-04-16 |
| DE59407555D1 (en) | 1999-02-11 |
| EP0649184A3 (en) | 1995-06-28 |
| DE4335232A1 (en) | 1995-04-20 |
| EP0649184A2 (en) | 1995-04-19 |
| CA2117839C (en) | 2004-05-25 |
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