EP0603651A3 - Signal sensing circuits for memory system using dynamic gain memory. - Google Patents
Signal sensing circuits for memory system using dynamic gain memory. Download PDFInfo
- Publication number
- EP0603651A3 EP0603651A3 EP19930119789 EP93119789A EP0603651A3 EP 0603651 A3 EP0603651 A3 EP 0603651A3 EP 19930119789 EP19930119789 EP 19930119789 EP 93119789 A EP93119789 A EP 93119789A EP 0603651 A3 EP0603651 A3 EP 0603651A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- memory
- signal sensing
- sensing circuits
- transistors
- dynamic gain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99473692A | 1992-12-22 | 1992-12-22 | |
US994736 | 1992-12-22 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0603651A2 EP0603651A2 (en) | 1994-06-29 |
EP0603651A3 true EP0603651A3 (en) | 1994-11-09 |
EP0603651B1 EP0603651B1 (en) | 1999-03-03 |
Family
ID=25540994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP93119789A Expired - Lifetime EP0603651B1 (en) | 1992-12-22 | 1993-12-08 | Signal sensing circuits for memory system using dynamic gain memory |
Country Status (8)
Country | Link |
---|---|
US (1) | US5646883A (en) |
EP (1) | EP0603651B1 (en) |
JP (1) | JPH06215574A (en) |
KR (1) | KR100285511B1 (en) |
AT (1) | ATE177244T1 (en) |
DE (1) | DE69323703T2 (en) |
HK (1) | HK1003737A1 (en) |
TW (1) | TW223172B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69621870T2 (en) * | 1995-03-31 | 2003-01-02 | Infineon Technologies Ag | Low-power sense amplifier of the type Gain memory cell |
DE19723936A1 (en) * | 1997-06-06 | 1998-12-10 | Siemens Ag | DRAM cell arrangement and method for its production |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5127739A (en) * | 1987-04-27 | 1992-07-07 | Texas Instruments Incorporated | CMOS sense amplifier with bit line isolation |
EP0505653A1 (en) * | 1991-03-29 | 1992-09-30 | International Business Machines Corporation | Combined sense amplifier and latching circuit for high speed ROMs |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
US3983545A (en) * | 1975-06-30 | 1976-09-28 | International Business Machines Corporation | Random access memory employing single ended sense latch for one device cell |
US4114055A (en) * | 1977-05-12 | 1978-09-12 | Rca Corporation | Unbalanced sense circuit |
US4286178A (en) * | 1978-06-12 | 1981-08-25 | Texas Instruments Incorporated | Sense amplifier with dual parallel driver transistors in MOS random access memory |
US4321492A (en) * | 1979-10-15 | 1982-03-23 | Rca Corporation | Two input sense circuit |
US4270190A (en) * | 1979-12-27 | 1981-05-26 | Rca Corporation | Small signal memory system with reference signal |
GB2070329B (en) * | 1980-01-25 | 1983-10-26 | Tokyo Shibaura Electric Co | Semiconductor memory device |
US4459497A (en) * | 1982-01-25 | 1984-07-10 | Motorola, Inc. | Sense amplifier using different threshold MOS devices |
US4586166A (en) * | 1983-08-31 | 1986-04-29 | Texas Instruments Incorporated | SRAM with improved sensing circuit |
US4627033A (en) * | 1984-08-02 | 1986-12-02 | Texas Instruments Incorporated | Sense amplifier with reduced instantaneous power |
JPS6376192A (en) * | 1986-09-19 | 1988-04-06 | Fujitsu Ltd | Semiconductor memory device |
US4864374A (en) * | 1987-11-30 | 1989-09-05 | Texas Instruments Incorporated | Two-transistor dram cell with high alpha particle immunity |
JPH01271996A (en) * | 1988-04-22 | 1989-10-31 | Mitsubishi Electric Corp | Nonvolatile semiconductor memory |
NL8802973A (en) * | 1988-12-02 | 1990-07-02 | Philips Nv | INTEGRATED MEMORY CIRCUIT. |
JPH0713861B2 (en) * | 1988-12-05 | 1995-02-15 | 三菱電機株式会社 | Semiconductor memory device |
US5040146A (en) * | 1989-04-21 | 1991-08-13 | Siemens Aktiengesellschaft | Static memory cell |
JPH0438697A (en) * | 1990-05-31 | 1992-02-07 | Oki Electric Ind Co Ltd | Data bus clamp circuit for semiconductor storage device |
US5089726A (en) * | 1990-11-29 | 1992-02-18 | International Business Machines Corporation | Fast cycle time clocked amplifier |
US5289415A (en) * | 1992-04-17 | 1994-02-22 | Motorola, Inc. | Sense amplifier and latching circuit for an SRAM |
US5278467A (en) * | 1992-07-14 | 1994-01-11 | Intel Corporation | Self-biasing input stage for high-speed low-voltage communication |
-
1993
- 1993-12-03 TW TW082110219A patent/TW223172B/en active
- 1993-12-08 AT AT93119789T patent/ATE177244T1/en not_active IP Right Cessation
- 1993-12-08 EP EP93119789A patent/EP0603651B1/en not_active Expired - Lifetime
- 1993-12-08 DE DE69323703T patent/DE69323703T2/en not_active Expired - Fee Related
- 1993-12-10 JP JP5341329A patent/JPH06215574A/en active Pending
- 1993-12-21 KR KR1019930028754A patent/KR100285511B1/en not_active IP Right Cessation
-
1996
- 1996-09-05 US US08/708,913 patent/US5646883A/en not_active Expired - Fee Related
-
1998
- 1998-04-02 HK HK98102799A patent/HK1003737A1/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5127739A (en) * | 1987-04-27 | 1992-07-07 | Texas Instruments Incorporated | CMOS sense amplifier with bit line isolation |
EP0505653A1 (en) * | 1991-03-29 | 1992-09-30 | International Business Machines Corporation | Combined sense amplifier and latching circuit for high speed ROMs |
Non-Patent Citations (1)
Title |
---|
KRAUTSCHNEIDER ET AL: "Fully scalable Gain Memory Cell for future DRAMS", MICROELECTRONIC ENGINEERING, vol. 15, 1991, AMSTERDAM NL, pages 367 - 370, XP024484449, DOI: doi:10.1016/0167-9317(91)90246-A * |
Also Published As
Publication number | Publication date |
---|---|
US5646883A (en) | 1997-07-08 |
HK1003737A1 (en) | 1998-11-06 |
EP0603651B1 (en) | 1999-03-03 |
TW223172B (en) | 1994-05-01 |
KR940016266A (en) | 1994-07-22 |
JPH06215574A (en) | 1994-08-05 |
ATE177244T1 (en) | 1999-03-15 |
KR100285511B1 (en) | 2001-04-02 |
DE69323703D1 (en) | 1999-04-08 |
DE69323703T2 (en) | 1999-07-22 |
EP0603651A2 (en) | 1994-06-29 |
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