EP0536947A3 - Articles comprising doped semiconductor material - Google Patents

Articles comprising doped semiconductor material Download PDF

Info

Publication number
EP0536947A3
EP0536947A3 EP19920308947 EP92308947A EP0536947A3 EP 0536947 A3 EP0536947 A3 EP 0536947A3 EP 19920308947 EP19920308947 EP 19920308947 EP 92308947 A EP92308947 A EP 92308947A EP 0536947 A3 EP0536947 A3 EP 0536947A3
Authority
EP
European Patent Office
Prior art keywords
articles
semiconductor material
doped semiconductor
doped
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP19920308947
Other versions
EP0536947B1 (en
EP0536947A2 (en
Inventor
John Edward Cunningham
Won-Tien Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of EP0536947A2 publication Critical patent/EP0536947A2/en
Publication of EP0536947A3 publication Critical patent/EP0536947A3/en
Application granted granted Critical
Publication of EP0536947B1 publication Critical patent/EP0536947B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H01L33/285—Materials of the light emitting region containing only elements of group II and group VI of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
EP92308947A 1991-10-11 1992-10-01 Articles comprising doped semiconductor material Expired - Lifetime EP0536947B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77467191A 1991-10-11 1991-10-11
US774671 1991-10-11

Publications (3)

Publication Number Publication Date
EP0536947A2 EP0536947A2 (en) 1993-04-14
EP0536947A3 true EP0536947A3 (en) 1993-09-15
EP0536947B1 EP0536947B1 (en) 2002-01-23

Family

ID=25101913

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92308947A Expired - Lifetime EP0536947B1 (en) 1991-10-11 1992-10-01 Articles comprising doped semiconductor material

Country Status (4)

Country Link
US (1) US5834792A (en)
EP (1) EP0536947B1 (en)
JP (1) JP2501401B2 (en)
DE (1) DE69232370D1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0133342A1 (en) * 1983-06-24 1985-02-20 Nec Corporation A superlattice type semiconductor structure having a high carrier density
EP0207266A2 (en) * 1985-05-17 1987-01-07 Licentia Patent-Verwaltungs-GmbH Method of making a spatially periodic semiconductor multilayer structure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0133342A1 (en) * 1983-06-24 1985-02-20 Nec Corporation A superlattice type semiconductor structure having a high carrier density
EP0207266A2 (en) * 1985-05-17 1987-01-07 Licentia Patent-Verwaltungs-GmbH Method of making a spatially periodic semiconductor multilayer structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS vol. 60, no. 1, 6 January 1992, NEW YORK US pages 115 - 117 W.T. TSANG ET AL. 'DOPING IN SEMICONDUCTORS WITH VARIABLE ACTIVATION ENERGY' *

Also Published As

Publication number Publication date
US5834792A (en) 1998-11-10
JP2501401B2 (en) 1996-05-29
DE69232370D1 (en) 2002-03-14
EP0536947B1 (en) 2002-01-23
JPH05206440A (en) 1993-08-13
EP0536947A2 (en) 1993-04-14

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