EP0487869A1 - Dispositif semi-conducteur de puissance, à extinction - Google Patents

Dispositif semi-conducteur de puissance, à extinction Download PDF

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Publication number
EP0487869A1
EP0487869A1 EP91117112A EP91117112A EP0487869A1 EP 0487869 A1 EP0487869 A1 EP 0487869A1 EP 91117112 A EP91117112 A EP 91117112A EP 91117112 A EP91117112 A EP 91117112A EP 0487869 A1 EP0487869 A1 EP 0487869A1
Authority
EP
European Patent Office
Prior art keywords
layer
mosfet
gate electrode
emitter layer
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP91117112A
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German (de)
English (en)
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EP0487869B1 (fr
Inventor
Klas Lilja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Asea Brown Boveri Ltd
ABB AB
Original Assignee
ABB Asea Brown Boveri Ltd
Asea Brown Boveri AB
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Application filed by ABB Asea Brown Boveri Ltd, Asea Brown Boveri AB filed Critical ABB Asea Brown Boveri Ltd
Publication of EP0487869A1 publication Critical patent/EP0487869A1/fr
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Publication of EP0487869B1 publication Critical patent/EP0487869B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Definitions

  • GTO Gate Turn Off
  • the GTO divides the entire chip area into a large number of unit cells connected in parallel. These components can be switched on and off via the gate contact; Because of the high gate currents when switching off, however, an enormous amount of circuitry for the gate control must be accepted.
  • MOS-controlled components For some years now, the development of MOS-controlled components has been increasingly promoted in power electronics.
  • the advantage of these MOS-controlled components lies mainly in the high input impedance at the control electrode. It enables the component to be controlled with a comparatively very low level of performance.
  • bipolar structures eg thyristors
  • the simple and, in particular, low-power control should, as far as possible used in power MOSFETs.
  • MOS-controlled thyristor or MCT M OS C ontrolled T hyristor
  • GTO GTO consists of a plurality of adjacent, parallel-connected unit cells
  • the shutdown is achieved a short-circuit of the emitter with the p-type base by means of switchable emitter shorts.
  • MOSFETs integrated with the emitter serve as switches, which can naturally be designed as n- or p-channel MOSFETs.
  • the essence of the invention is to provide a five-layer structure between the anode and the cathode instead of the usual bipolar pnpn thyristor structure consisting of four layers, with a p auf-doped layer directly connected to the cathode as the fifth layer on the cathode side Contact area is arranged.
  • the contact area is bridged by a MOSFET.
  • this additional layer lies between the cathode and the p-n-p-n thyristor structure and effectively prevents the electron injection leading to filamentation.
  • the means comprise a second MOSFET which is formed from the contact region, the n-emitter layer, the p-base layer and a second gate electrode arranged above the n-emitter layer.
  • the bipolar transistor which is automatically turned on when switched off, takes over the function of the second MOSFET.
  • Fig. 1 the unit cell of a preferred embodiment of the component according to the invention is shown in cross section.
  • the component is generally therefore hereinafter be referred to a five layers comprehensive, an insulated gate-controlled bipolar switch and is briefly as IG-FiBS (Insulated Gate Bipolar controlled F ive layer S witch).
  • IG-FiBS Insulated Gate Bipolar controlled F ive layer S witch
  • the IG-FiBS consists of a semiconductor substrate 1 with an upper and a lower main surface.
  • the lower main surface is provided with an anode contact 10 which is connected to the anode A.
  • the upper main surface carries a cathode contact 2 within each unit cell, which in turn is connected to the cathode K.
  • a layer sequence of five layers doped with alternating polarity is arranged within the semiconductor substrate 1, which layers successively have a p+-doped p-emitter layer 9, an n ⁇ -doped n-base layer 8, a p+- doped p-base layer 7, an n+-doped n-emitter layer 6 and a piertes-doped contact region 5.
  • the p-emitter layer 9 is contacted by the anode contact 10, the contact region 5 on the other side of the semiconductor substrate by the cathode contact 2.
  • a first MOSFET M1 is integrated on the one side and a second MOSFET M2 on the other side in the semiconductor substrate 1.
  • the first MOSFET M1 is composed of the n-emitter layer 6, the contact region 5, an n+-doped source region 4 embedded in the contact region 5 and connected to the cathode contact 2, and a first gate electrode G1 arranged above the contact region 5 (gate insulation 3) educated. It is an n-channel MOSFET, the channel region of which is part of the contact region 5 which occurs between the n-emitter layer 6 and the source region 4.
  • the second MOSFET M2 is formed from the p-base layer 7, the n-emitter layer 6, the contact region 5 and a second gate electrode G2 arranged insulated above the n-emitter layer 6 (gate insulation 3). It is a p-channel MOSFET, the channel region of which is part of the n-emitter layer 6 that occurs between the trough-shaped contact region 5 and the p-base layer 7.
  • the parameters of the unit cell of the embodiment from FIG. 1 can be selected, for example, as follows: the unit cell has a width b of approximately 20 ⁇ m.
  • the thickness d of the semiconductor substrate 1 is approximately 420 ⁇ m.
  • the course of the doping concentration c (in cm ⁇ 3), which results along the section lines AA and BB shown in FIG. 1, is dependent on logarithmic plotting in FIG. 7 (section AA) and in FIG. 6 (section BB) of the distance x from the substrate surface (see Fig. 1).
  • the doping concentration for n-doped material is removed from the dashed zero line upwards, the corresponding doping concentration for p-doped material downwards. It can be seen from FIGS.
  • n base layer 8 is, for example, a doping concentration of about 5x1013 cm ⁇ 3, while the n-emitter layer 6 has a doping concentration of about 1018 cm ⁇ 3 and the p-doped contact region 5 has a doping concentration of about 1019 cm ⁇ 3.
  • the component according to FIG. 1 can be understood in an equivalent circuit diagram (FIG. 5) as an anti-parallel series circuit comprising a diode D and a thyristor T, the diode D being able to be bridged by the first MOSFET M1, while the second MOSFET M2 is between the cathode K and the gate of the thyristor T is connected.
  • FIG. 5 an equivalent circuit diagram
  • the function of the component according to FIG. 1 is as follows: in the ON state, the first gate electrode G1 has a positive gate voltage relative to the cathode K.
  • the first MOSFET M1 is thus switched on and short-circuits the cathode contact 2 with the n-emitter layer 6, which acts as an emitter for the rest of the component.
  • the short circuit reduces the active structure of the component to a pnpn sequence of four layers (p-emitter layer 9, n-base layer 8, p-base layer 7 and n-emitter layer 6), which - apart from the channel resistance of the first MOSFET that can be made very small - behaves like a conventional thyristor.
  • the second MOSFET M2 is blocked in this phase.
  • the gate voltage at the first gate electrode G1 is reduced, so that the first MOSFET M1 changes to the blocked state.
  • the IG-FiBS is converted from the four-layer to a five-layer (pnpnp) structure and switches off.
  • the additional p-doped contact region 5 basically completely stops the electron injection from the cathode side.
  • the second MOSFET M2 is switched on, which then takes over the full cut-off current. This is necessary in order to prevent an avalanche breakdown at the PN junction between the contact region 5 and the n-emitter layer 6.
  • This PN junction has a rather low breakdown voltage (on the order of 10-20 V), which is far below the blocking capability of the entire component. An avalanche breakthrough at this PN junction would then prevent the component from being switched off or at least considerably slow down the switch-off process.
  • the cathode is formed by the p-doped contact region 5 when it is switched off. For this reason, electron injection is not possible at all. Rather, an increase in the voltage or the current in the IG-FiBS structure during the shutdown results in a faster breakdown of the stored charge carriers, ie in a faster turn-off.
  • the IG-FiBS is therefore self-stabilizing.
  • the structure shown in FIG. 1 comprises the two MOSFETs M1 and M2, both of which - as explained above - are necessary for the switch-off process.
  • a third MOSFET M3 (FIG. 2) can then be provided for switching on the component.
  • This third MOSFET M3 is formed by the n-base layer 8, the p-base layer 7, the n-emitter layer 6 and a further gate electrode arranged insulated above the p-base layer 7. As shown in FIG. 2, this further gate electrode can be combined with the first gate electrode G1 to form a common third gate electrode G3. In this way, the first and the third MOSFET M1 and M3 are integrated next to one another and electrically connected in series.
  • the three MOSFETs M1, M2 and M3 are arranged next to one another on the same side and connected in series.
  • the gate electrodes of the three MOSFETs are then combined to form a common fourth gate electrode G4.
  • MOSFETs M1, M2 and M3 are also possible within the scope of the invention. It is particularly conceivable to arrange the first MOSFET M1 on one side of the cathode contact and to combine the MOSFETs M2 and M3 on the other side. It is also conceivable to provide other known means for switching on the component instead of the third MOSFET M3.
  • FIG. 4 represents a variant of the embodiment shown in FIG. 1.
  • a bipolar, parasitic pnp layer formed from the contact region 5, n-emitter layer 6 and p-base layer 7 is used here.
  • Transistor used by a deliberate avalanche breakthrough is ignited and then the cut-off current (indicated in Fig. 4 by the two arrows) takes over.
  • the n-emitter layer 6 runs out towards the upper main surface of the semiconductor substrate 1 in a narrow, less doped (n + instead of n ++) base region 11, which is adjacent to a more heavily doped (p ++ instead of p +) sub-region 12 of the p-base layer 7.
  • the bipolar transistor has a high current gain ⁇ and can easily be switched on by a breakdown in this area.
  • the remaining parts of the structure perform the same tasks as in the embodiment according to FIG. 1.
  • a further MOSFET can therefore also be provided for switching on and combined with the first MOSFET M1, similar to that in FIG. 2.
  • the invention results in an easily controllable, safely switchable high-performance component, in which filamentation of the current is avoided when switching off, and which is comparatively simple to produce.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
EP91117112A 1990-11-29 1991-10-08 Dispositif semi-conducteur de puissance, à extinction Expired - Lifetime EP0487869B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH378390 1990-11-29
CH3783/90 1990-11-29

Publications (2)

Publication Number Publication Date
EP0487869A1 true EP0487869A1 (fr) 1992-06-03
EP0487869B1 EP0487869B1 (fr) 1997-02-12

Family

ID=4263387

Family Applications (1)

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EP91117112A Expired - Lifetime EP0487869B1 (fr) 1990-11-29 1991-10-08 Dispositif semi-conducteur de puissance, à extinction

Country Status (4)

Country Link
US (1) US5625203A (fr)
EP (1) EP0487869B1 (fr)
JP (1) JPH04268766A (fr)
DE (1) DE59108541D1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454201A2 (fr) * 1990-04-09 1991-10-30 Philips Electronics Uk Limited Dispositif semi-conducteur comprenant un thyristor
EP0520355A1 (fr) * 1991-06-28 1992-12-30 Asea Brown Boveri Ag Composant semi-conducteur de puissance à commande d'extinction et procédé de sa fabrication
GB2289371A (en) * 1994-05-05 1995-11-15 Fuji Electric Co Ltd A semiconductor device and control method
EP0697736A2 (fr) * 1994-08-08 1996-02-21 ABB Management AG Dispositif semi-conducteur de puissance contrÔlé MOS à hautes tensions

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4402877C2 (de) * 1994-02-01 1995-12-14 Daimler Benz Ag Durch MOS-Gate schaltbares Leistungshalbleiterbauelement
EP0718893A3 (fr) * 1994-11-25 1999-07-14 Fuji Electric Co., Ltd. Thyristor à contrÔle MOS ayant deux grilles et procédé de fabrication
US6107649A (en) * 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
US6959870B2 (en) * 1999-06-07 2005-11-01 Metrologic Instruments, Inc. Planar LED-based illumination array (PLIA) chips
US20020179968A1 (en) * 2001-05-30 2002-12-05 Frank Pfirsch Power semiconductor component, compensation component, power transistor, and method for producing power semiconductor components
US20140157223A1 (en) * 2008-01-17 2014-06-05 Klas Olof Lilja Circuit and layout design methods and logic cells for soft error hard integrated circuits

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106059A1 (fr) * 1982-08-18 1984-04-25 Siemens Aktiengesellschaft Commutateur semi-conducteur muni d'un thyristor à blocage par la gâchette
EP0454201A2 (fr) * 1990-04-09 1991-10-30 Philips Electronics Uk Limited Dispositif semi-conducteur comprenant un thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0219995B1 (fr) * 1985-09-30 1994-03-02 Kabushiki Kaisha Toshiba Thyristor à commande d'extinction comportant des transistors d'allumage/extinction indépendants

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106059A1 (fr) * 1982-08-18 1984-04-25 Siemens Aktiengesellschaft Commutateur semi-conducteur muni d'un thyristor à blocage par la gâchette
EP0454201A2 (fr) * 1990-04-09 1991-10-30 Philips Electronics Uk Limited Dispositif semi-conducteur comprenant un thyristor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES. Bd. ED-33, Nr. 10, Oktober 1986, NEW YORK US Seiten 1609 - 1618; V. A. K. TEMPLE: 'MOS-controlled thyristors - A new class of power devices' *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0454201A2 (fr) * 1990-04-09 1991-10-30 Philips Electronics Uk Limited Dispositif semi-conducteur comprenant un thyristor
EP0454201B1 (fr) * 1990-04-09 1996-10-30 Philips Electronics Uk Limited Dispositif semi-conducteur comprenant un thyristor
EP0520355A1 (fr) * 1991-06-28 1992-12-30 Asea Brown Boveri Ag Composant semi-conducteur de puissance à commande d'extinction et procédé de sa fabrication
GB2289371A (en) * 1994-05-05 1995-11-15 Fuji Electric Co Ltd A semiconductor device and control method
US5621229A (en) * 1994-05-05 1997-04-15 Fuji Electric Co., Ltd. Semiconductor device and control method
GB2289371B (en) * 1994-05-05 1997-11-19 Fuji Electric Co Ltd A semiconductor device and control method
EP0697736A2 (fr) * 1994-08-08 1996-02-21 ABB Management AG Dispositif semi-conducteur de puissance contrÔlé MOS à hautes tensions
EP0697736A3 (fr) * 1994-08-08 1997-05-07 Abb Management Ag Dispositif semi-conducteur de puissance contrÔlé MOS à hautes tensions

Also Published As

Publication number Publication date
US5625203A (en) 1997-04-29
JPH04268766A (ja) 1992-09-24
DE59108541D1 (de) 1997-03-27
EP0487869B1 (fr) 1997-02-12

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