EP0462377B1 - Ion source - Google Patents
Ion source Download PDFInfo
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- EP0462377B1 EP0462377B1 EP91106642A EP91106642A EP0462377B1 EP 0462377 B1 EP0462377 B1 EP 0462377B1 EP 91106642 A EP91106642 A EP 91106642A EP 91106642 A EP91106642 A EP 91106642A EP 0462377 B1 EP0462377 B1 EP 0462377B1
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- European Patent Office
- Prior art keywords
- ion source
- excitation coil
- source according
- amplification element
- tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
Definitions
- the invention relates to an ion source according to the preamble of patent claim 1.
- Ion and plasma sources are required for numerous applications, for example to etch or coat certain materials.
- the known ion and plasma sources have a gas chamber in which gaseous matter is split into electrically charged particles, which are then brought onto the material to be etched or coated due to their own acceleration or with the aid of extraction grids.
- An inductively excited ion source which has a container for receiving plasma to be ionized, this container being surrounded by a waveguide which is connected to a high-frequency generator (US Pat. No. 4,849,675).
- a high-frequency generator US Pat. No. 4,849,675
- the two ends of the waveguide are at the same potential and the length of the waveguide is n c 2f , where n is an integer other than zero, c is the phase velocity of the electromagnetic wave and f is the frequency of the high frequency generator.
- the frequency of the high-frequency generator is tuned by means of special tuning means to the natural frequency of the system, which consists of the waveguide, the plasma to be ionized, or to a harmonic frequency to this natural frequency.
- the high-frequency generator is relatively complex.
- the high-frequency generator and the excitation coil of the ion source are spatially separated from one another and only connected to one another via a coupling cable.
- a special coupling network is required to adapt the working frequency of the ion source to the working frequency of the transmitter.
- a high-frequency plasma generator with a tubular combustion chamber which is surrounded by an induction coil having several turns (DE-B-20 04 839).
- This induction coil is fed by an oscillator which is arranged separately from the combustion chamber.
- a controllable coil is provided, which is connected in series with the actual induction coil.
- Another known device for generating plasma which works with microwaves, has a housing, from which all essential components are enclosed (US Pat. No. 3,814,983).
- the microwave energy is applied to a special wave propagation structure via a rectangular waveguide.
- the plasma is not excited with an induction coil, which is part of an oscillating circuit.
- a plasma source which has a gas container which is surrounded by an RF excitation coil which is connected to a reinforcing element (US Pat. No. 3,958,883).
- a tuning capacitor is provided in parallel with the RF excitation coil in order to tune the natural frequency of the resonant circuit formed from the coil and capacitor.
- the invention has for its object to dispense with coupling networks for the excitation coil and frequency-determining tuning capacitors in an inductively excited ion or plasma source.
- the advantage achieved with the invention is, in particular, that a settling to the optimum working frequency is automatically achieved.
- the entire ion source can be implemented as a very small component.
- a circuit arrangement which shows a high-frequency excitation coil 1, which consists of two layers 2, 3, around a plasma container, not shown are looped from quartz.
- the high-frequency excitation coil 1 is connected with its one connection 4 via a coupling capacitor 5 to the anode 6 of a triode tube 7.
- the other terminal 8 of the excitation coil 1 is connected to ground 9.
- the control grid 11 of the triode tube 7 is connected via an inductor 12 to a ⁇ element which acts as a low-pass element and consists of a longitudinal inductor 13 and two transverse capacitors 14, 15.
- a potentiometer 16 is connected to this ⁇ element, the control connection 17 of which is connected to an ammeter 18.
- the task of the ⁇ element 13, 14, 15 is to prevent the potentiometer 16 and the ammeter 18 from being influenced without impairing the bias setting of the grating 11, which is carried out with direct voltage.
- the ⁇ element 13 to 15 should prevent high frequencies from getting outside.
- the circuit arrangement described so far is surrounded by a metallic housing 19 which has a plurality of feed-through capacitors 20 to 23 in the housing wall.
- These feedthrough capacitors 20 to 23 are e.g. B. designed for nominal voltages of 440 V DC, 250 V AC and 16 A nominal current.
- the feed-through capacitors 21, 22 are used to supply heating voltage U F , which, for. B. 6.3 V AC, while the control grid current I G flows through the feedthrough capacitor 20.
- block capacitors 29 to 32 are located, which, for. B. have a capacitance of 4700 pF and a dielectric strength of 3 kV.
- Block capacitors 33, 34 are located between a connection of the ⁇ element 13, 14, 15 and the housing wall 19 and between the anode high-voltage supply 35 and the housing wall 19. Also between the two cathode heating wires 26, 27 there is a tube 7 in the immediate vicinity Block capacitor 42 is provided.
- a fan motor 36 is shown, from which electrical connecting lines 37, 38, 39 are guided through the housing 19 to the outside.
- the presetting of the grid 11 of the tube 7 takes place with the aid of the potentiometer 16 and via the internal resistance of the tube 7.
- the current conduction within the tube 7 takes place mainly via the electron flow between cathode 40 and anode 6 when the cathode heating voltage U F and the anode direct voltage U a were created.
- the tube grid 11, with which the current flow can be controlled, is at a negative potential with respect to the anode 6. The lower this potential is, the less electrons get from cathode 40 to anode 6.
- the section anode 6 - grid 11 - potentiometer 16 represents a voltage divider for setting the grid bias voltage.
- the voltage applied to this voltage divider is the anode DC voltage U a .
- the inductors 12, 13 represent a short circuit for direct current, so that the grid current can be measured via the ammeter 18.
- the alternating voltage signal of the high-frequency excitation coil 1 reaches the grid 11 via an inner tube capacitance 41, as a result of which the arrangement of the tube 7 and the high-frequency excitation coil 1 is influenced. Since this arrangement begins to oscillate due to the presence of voltage noise, these oscillations are determined by the natural frequency of the overall arrangement.
- Coil 1 and tube 7 thus together form the core of an oscillator that oscillates freely and whose resonance frequency - since coil 1 and tube 7 remain practically unchanged in terms of their structure - is changed by the properties of the plasma chamber.
- FIG. 2 shows the mechanically constant structure of the arrangement shown in FIG. 1. Those components which correspond functionally to one another are provided with the same reference numbers in FIG. 2 as in FIG. 1. It can be seen from FIG. 2 that the tube 7 and the excitation coil 1 are jointly enclosed by the metallic housing 19.
- the excitation coil 1 is placed around a glass vessel 50 which has a gas supply connection 51 which is connected to a gas supply 53 arranged outside the housing 19. This gas supply 53 is screwed onto the housing 19 with a knurled screw 54.
- a pressure ring 55 sits on a metallic border 56 of the glass vessel 50 and is connected to this glass vessel 50 via an elastic sealing ring 56.
- the turns of the coil 1 are water-cooled and are therefore connected to cooling water feeds 57, 58.
- extraction grids 59, 60, 61 are arranged, with which the flow of charged or uncharged particles can be controlled.
- 62, 63 denotes a base of the ion chamber, which is connected to the housing 19 by means of screws 64, 65 and is connected to a working chamber (not shown). In this working chamber are the materials that are bombarded by charged particles.
- the interface to the working chamber is characterized by a seal 66.
- the tube 7 is arranged with its connections 67, 68 on a base 69, which in turn is connected to the housing 19.
- a separate support insulator 70 is provided for the coil 12, which is also connected to the housing 19.
- the grid resistor 16 can be adjusted by means of a rotary wheel 71. With 72, 73 sockets for connecting the heating voltage U F are designated. It is important for the present invention that the connecting line 74 between the anode 6 of the tube 7 and the excitation coil 1 is very short.
- the fan motor 36 cannot be seen in FIG. 2. However, it is important since the tube 7 used is a radiation-cooled triode, in which the fan must be switched on before starting up. This tube 7 is preferably operated in C mode, which is achieved by a correspondingly large negative bias. A C amplifier is a selective amplifier with high efficiency.
- the plasma space is largely realized by the glass vessel 50, which, for. B. is 63 mm high with a wall thickness of 3 mm and has a diameter of 46 mm.
- a dense wire mesh can be provided in the gas inlet connection 51, which prevents the plasma from braking in the gas supply.
- control element e.g. B. a transistor or a thyristor can be used.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
Description
Die Erfindung betrifft eine Ionenquelle nach dem Oberbegriff des Patentanspruchs 1.The invention relates to an ion source according to the preamble of
Ionen- und Plasmaquellen werden für zahlreiche Anwendungsfälle benötigt, beispielsweise um bestimmte Materialien zu ätzen oder zu beschichten. In der Regel weisen die bekannten Ionen- und Plasmaquellen eine Gaskammer auf, in der gasförmige Materie in elektrisch geladene Teilchen aufgespalten wird, die dann aufgrund ihrer Eigenbeschleunigung oder mit Hilfe von Extraktionsgittern auf das zu ätzende oder zu beschichtende Material gebracht werden.Ion and plasma sources are required for numerous applications, for example to etch or coat certain materials. As a rule, the known ion and plasma sources have a gas chamber in which gaseous matter is split into electrically charged particles, which are then brought onto the material to be etched or coated due to their own acceleration or with the aid of extraction grids.
Es ist bereits eine induktiv angeregte Ionenquelle bekannt, die einen Behälter für die Aufnahme von zu ionisierendem Plasma aufweist, wobei dieser Behälter von einem Wellenleiter umgeben ist, der mit einem Hochfrequenzgenerator in Verbindung steht (US-PS 4 849 675). Hierbei liegen die beiden Enden des Wellenleiters auf demselben Potential und die Länge des Wellenleiters beträgt
Der Hochfrequenzgenerator ist relativ aufwendig aufgebaut. Außerdem sind der Hochfrequenzgenerator und die Anregungsspule der Ionenquelle räumlich voneinander getrennt und nur über ein Ankoppelkabel miteinander verbunden. Um die Arbeitsfrequenz der Ionenquelle an die Arbeitsfrequenz des Senders anzupassen, ist ein besonderes Ankoppelnetzwerk erforderlich.The high-frequency generator is relatively complex. In addition, the high-frequency generator and the excitation coil of the ion source are spatially separated from one another and only connected to one another via a coupling cable. A special coupling network is required to adapt the working frequency of the ion source to the working frequency of the transmitter.
Weiterhin ist ein Hochfrequenz-Plasmagenerator mit einer rohrförmigen Brennkammer bekannt, die von einer mehrere Windungen aufweisenden Induktionsspule umgeben ist (DE-B-20 04 839). Diese Induktionsspule wird von einem Oszillator gespeist, der getrennt von der Brennkammer angeordnet ist. Zur Anpassung der Arbeitsfrequenz der Brennkammer mit dem Plasma an die Arbeitsfrequenz des Oszillators ist eine regelbare Spule vorgesehen, die in Reihe zur eigentlichen Induktionsspule geschaltet ist.Furthermore, a high-frequency plasma generator with a tubular combustion chamber is known, which is surrounded by an induction coil having several turns (DE-B-20 04 839). This induction coil is fed by an oscillator which is arranged separately from the combustion chamber. To adjust the working frequency of the combustion chamber with the plasma to the working frequency of the oscillator, a controllable coil is provided, which is connected in series with the actual induction coil.
Eine andere bekannte Vorrichtung zum Erzeugen von Plasma, die mit Mikrowellen arbeitet, weist ein Gehäuse auf, von dem alle wesentlichen Komponenten eingeschlossen werden (US-A-3 814 983). Hierbei wird die Mikrowellenenergie über einen Rechteckhohlleiter auf eine besondere Wellenausbreitungsstruktur gegeben. Die Anregung des Plasmas erfolgt indessen nicht mit einer Induktionsspule, die Teil eines Schwingkreises ist.Another known device for generating plasma, which works with microwaves, has a housing, from which all essential components are enclosed (US Pat. No. 3,814,983). The microwave energy is applied to a special wave propagation structure via a rectangular waveguide. However, the plasma is not excited with an induction coil, which is part of an oscillating circuit.
Schließlich ist auch noch eine Plasmaquelle bekannt, die einen Gasbehälter aufweist, der von einer HF-Anregungsspule umgeben ist, die mit einem Verstärkungselement in Verbindung steht (US-PS 3 958 883). Bei dieser bekannten Plasmaquelle ist parallel zur HF-Anregungsspule ein Abstimmkondensator vorgesehen, um die Eigenfrequenz des aus Spule und Kondensator gebildeten Schwingkreises abzustimmen.Finally, a plasma source is also known which has a gas container which is surrounded by an RF excitation coil which is connected to a reinforcing element (US Pat. No. 3,958,883). In this known plasma source, a tuning capacitor is provided in parallel with the RF excitation coil in order to tune the natural frequency of the resonant circuit formed from the coil and capacitor.
Der Erfindung liegt die Aufgabe zugrunde, bei einer induktiv angeregten Ionen- oder Plasmaquelle auf Ankoppelnetzwerke für die Anregungsspule sowie auf frequenzbestimmende Abstimmkondensatoren zu verzichten.The invention has for its object to dispense with coupling networks for the excitation coil and frequency-determining tuning capacitors in an inductively excited ion or plasma source.
Diese Aufgabe wird gemäß den Merkmalen des Patentanspruchs 1 gelöst.This object is achieved in accordance with the features of
Der mit der Erfindung erzielte Vorteil besteht insbesondere darin, daß automatisch ein Einschwingen auf die optimale Arbeitsfrequenz erzielt wird. Außerdem läßt sich die gesamte Ionenquelle als sehr kleines Bauelement realisieren.The advantage achieved with the invention is, in particular, that a settling to the optimum working frequency is automatically achieved. In addition, the entire ion source can be implemented as a very small component.
Ein Ausführungsbeispiel der Erfindung ist in der Zeichnung dargestellt und wird im folgenden näher beschrieben. Es zeigen:
- Fig. 1
- ein Prinzipschaltbild einer erfindungsgemäßen Anordnung;
- Fig. 2
- eine schematische Darstellung einer räumlichen konstruktiven Ausführungsform einer Erfindung.
- Fig. 1
- a schematic diagram of an arrangement according to the invention;
- Fig. 2
- is a schematic representation of a spatial constructive embodiment of an invention.
In der Fig. 1 ist eine Schaltungsanordnung dargestellt, welche eine Hochfrequenz-Anregungsspule 1 zeigt, die aus zwei Lagen 2, 3 besteht, die um einen nicht dargestellten Plasmabehälter aus Quarz geschlungen sind. Die Hochfrequenz-Anregungsspule 1 steht mit ihrem einen Anschluß 4 über einen Koppelkondensator 5 mit der Anode 6 einer Triodenröhre 7 in Verbindung. Der andere Anschluß 8 der Anregungsspule 1 liegt an Masse 9. An der Anode 6 steht über eine Induktivität 10 die positive Polarität einer Gleichspannung von z. B. 3 kV an. Das Steuergitter 11 der Triodenröhre 7 ist über eine Induktivität 12 mit einem π-Glied verbunden, das als Tiefpaßgrundglied wirkt und aus einer Längsinduktivität 13 und zwei Querkapazitäten 14, 15 besteht. An dieses π-Glied ist ein Potentiometer 16 angeschlossen, dessen Regelanschluß 17 mit einem Amperemeter 18 verbunden ist.In Fig. 1, a circuit arrangement is shown, which shows a high-
Aufgabe des π-Glieds 13, 14, 15 ist es, die Beeinflussung des Potentiometers 16 und des Amperemeters 18 zu unterbinden, ohne die Vorspannungseinstellung des Gitters 11, die mit Gleichspannung erfolgt, zu beeinträchtigen. Außerdem soll das π-Glied 13 bis 15 verhindern, daß Hochfrequenzen nach draußen gelangen.The task of the
Die bisher beschriebene Schaltungsanordnung ist von einem metallischen Gehäuse 19 umgeben, das mehrere Durchführungskondensatoren 20 bis 23 in der Gehäusewand aufweist. Diese Durchführungskondensatoren 20 bis 23 sind z. B. für Nennspannungen von 440 V Gleichspannung, 250 V Wechselspannung und 16 A Nennstrom ausgelegt. Über die Durchführungskondensatoren 21, 22 erfolgt die Versorgung mit Heizspannung UF, die z. B. 6,3 V Wechselspannung beträgt, während über den Durchführungskondensator 20 der Steuergitterstrom IG fließt. Zwischen dem metallischen Gehäuse 19, das an Masse 24 liegt, und den Niederfrequenzleitungen 25 bis 28, die durch die Gehäusewand 19 geführt sind, liegen Blockkondensatoren 29 bis 32, die z. B. eine Kapazität von 4700 pF und eine Spannungsfestigkeit von 3 kV besitzen. Weitere Blockkondensatoren 33, 34 liegen zwischen einem Anschluß des π-Glieds 13, 14, 15 und der Gehäusewand 19 sowie zwischen der Anoden-Hochspannungszuführung 35 und der Gehäusewand 19. Auch zwischen den beiden Kathodenheizdrähten 26, 27 ist in unmittelbarer Nähe der Röhre 7 ein Blockkondensator 42 vorgesehen.The circuit arrangement described so far is surrounded by a
In der linken oberen Ecke des Gehäuses 19 ist ein Lüftermotor 36 dargestellt, von dem elektrische Anschlußleitungen 37, 38, 39 durch das Gehäuse 19 nach außen geführt sind. Die Voreinstellung des Gitters 11 der Röhre 7 erfolgt mit Hilfe des Potentiometers 16 und über den inneren Widerstand der Röhre 7. Die Stromleitung innerhalb der Röhre 7 erfolgt hauptsächlich über den Elektronenfluß zwischen Kathode 40 und Anode 6, wenn die Kathodenheizspannung UF und die Anodengleichspannung Ua angelegt wurden. Das Röhrengitter 11, mit dem der Stromfluß gesteuert werden kann, liegt in Bezug auf die Anode 6 auf negativem Potential. Je niedriger dieses Potential ist, um so weniger Elektronen gelangen von der Kathode 40 zur Anode 6.In the upper left corner of the
Die Strecke Anode 6 - Gitter 11 - Potentiometer 16 stellt einen Spannungsteiler zur Gittervorspannungseinstellung dar. Die an diesem Spannungsteiler anliegende Spannung ist die Anodengleichspannung Ua.The section anode 6 - grid 11 -
Die Induktivitäten 12, 13 stellen für Gleichstrom einen Kurzschluß dar, so daß über das Amperemeter 18 der Gitterstrom gemessen werden kann.The
Das Wechselspannungssignal der Hochfrequenz-Anregungsspule 1 gelangt über eine innere Röhrenkapazität 41 auf das Gitter 11, wodurch die Anordnung aus Röhre 7 und Hochfrequenz-Anregungsspule 1 beeinflußt wird. Da diese Anordnung durch immer vorhandenes Spannungsrauschen zu schwingen beginnt, werden diese Schwingungen durch die Eigenfrequenz der Gesamtanordnung festgelegt.The alternating voltage signal of the high-
Diese Eigenfrequenz kann sich fortlaufend verändern und wird durch die Induktivität der Spule 1, die elektrischen Eigenschaften der Plasmakammer und die Röhrenkapazität 41 bestimmt. Spule 1 und Röhre 7 bilden somit gemeinsam das Kernstück eines Oszillators, der frei schwingt und dessen Resonanzfrequenz - da Spule 1 und Röhre 7 von ihrem Aufbau her praktisch unverändert bleiben - durch die Eigenschaften der Plasmakammer geändert wird.This natural frequency can change continuously and is determined by the inductance of the
In der Fig. 2 ist der mechanisch konstrucktive Aufbau der in der Fig. 1 gezeigten Anordnung dargestellt. Diejenigen Bauteile, welche funktionsmäßig einander entsprechen, sind in der Fig. 2 mit denselben Bezugszahlen versehen wie in der Fig. 1. Man erkennt aus der Fig. 2, daß die Röhre 7 und die Anregungsspule 1 gemeinsam von dem metallischen Gehäuse 19 umschlossen sind. Die Anregungsspule 1 ist um ein Glasgefäß 50 gelegt, das einen Gaszuführungsstutzen 51 aufweist, der mit einer außerhalb des Gehäuses 19 angeordneten Gaszuführung 53 in Verbindung steht. Diese Gaszuführung 53 ist mit einer Rändelschraube 54 auf das Gehäuse 19 geschraubt. Ein Druckring 55 sitzt auf einer metallischen Einfassung 56 des Glasgefäßes 50 und steht über einen elastischen Dichtungsring 56 mit diesem Glasgefäß 50 in Verbindung. Die Windungen der Spule 1 sind wassergekühlt und deshalb mit Kühlwasserzuführungen 57, 58 verbunden.2 shows the mechanically constant structure of the arrangement shown in FIG. 1. Those components which correspond functionally to one another are provided with the same reference numbers in FIG. 2 as in FIG. 1. It can be seen from FIG. 2 that the
Am Boden des Glasgefäßes sind drei Extraktionsgitter 59, 60, 61 angeordnet, mit denen der Strom geladener oder ungeladener Teilchen gesteuert werden kann. Mit 62, 63 ist ein Sockel der Ionenkammer bezeichnet, der über Schrauben 64, 65 mit dem Gehäuse 19 verbunden ist und mit einer nicht dargestellten Arbeitskammer in Verbindung steht. In dieser Arbeitskammer befinden sich die Materialien, die durch geladene Teilchen bombardiert werden.At the bottom of the glass vessel, three
Die Schnittstelle zur Arbeitskammer ist durch eine Dichtung 66 charakterisiert. Die Röhre 7 ist mit ihren Anschlüssen 67, 68 auf einem Sockel 69 angeordnet, der seinerseits mit dem Gehäuse 19 verbunden ist. Für die Spule 12 ist ein eigener Stützisolator 70 vorgesehen, der ebenfalls mit dem Gehäuse 19 verbunden ist.The interface to the working chamber is characterized by a
Der Gitterwiderstand 16 kann durch ein Drehrad 71 verstellt werden. Mit 72, 73 sind Buchsen für den Anschluß der Heizspannung UF bezeichnet. Wichtig für die vorliegende Erfindung ist der Umstand, daß die Verbindungsleitung 74 zwischen der Anode 6 der Röhre 7 und der Anregungsspule 1 sehr kurz ist.The
Der Lüftermotor 36 ist in der Fig. 2 nicht zu erkennen. Er ist jedoch wichtig, da es sich bei der verwendeten Röhre 7 um eine strahlungsgekühlte Triode handelt, bei der vor Inbetriebnahme das Gebläse eingeschaltet werden muß. Vorzugsweise wird diese Röhre 7 im C-Betrieb gefahren, was durch eine entsprechend große negative Vorspannung erreicht wird. Ein C-Verstärker ist ein Selektivverstärker mit hohem Wirkungsgrad.The
Der Plasmaraum wird zum großen Teil durch das Glasgefäß 50 realisiert, das z. B. bei einer Wandstärke von 3 mm 63 mm hoch ist und einen Durchmesser von 46 mm aufweist. Im Gaseinlaßstutzen 51 kann ein dichtes Drahtgeflecht vorgesehen sein, das ein Bremsen des Plasmas in der Gaszuführung verhindert.The plasma space is largely realized by the
Statt einer Röhre kann grundsätzlich auch ein anderes Steuerelement, z. B. ein Transistor oder ein Thyristor, verwendet werden.Instead of a tube, another control element, e.g. B. a transistor or a thyristor can be used.
Claims (9)
- An ion source for generating a plasma, having1.1 a gas container (50) in which the plasma is generated, and1.2 an HF excitation coil (1) surrounding this gas container (50), and having1.3 an amplification element (7) which has a control electrode (11),characterized in that1.3.1 the excitation coil (1) being connected to an electrode (e.g. 6) of the amplification element (7) through which a controlled current flows, and1.3.2 the control electrode (11) of the amplification element (7) being connected in alternating current (e.g. by way of 41) to the HF excitation coil (1),
the gas container (50) and the HF excitation coil (1) surrounding it, and the amplification element (7), are accommodated together in a metal housing (19), and in that the natural frequency of the oscillation circuit whereof the HF excitation coil (1) is a component is determined by the inductance of this excitation coil (1) and by the electrical properties of the plasma. - An ion source according to Claim 1, characterized in that the spacing between the one electrode (6) of the amplification element (7) and the HF excitation coil (1) is small.
- An ion source according to Claim 2, characterized in that the spacing is approximately equal to or less than the transverse dimension of the HF excitation coil (1).
- An ion source according to Claim 1, characterized in that the amplification element is a tube (7).
- An ion source according to Claim 1, characterized in that the amplification element is a transistor.
- An ion source according to Claim 4, characterized in that the tube (7) is a triode.
- An ion source according to Claim 4, characterized in that the high-frequency tube (7) is connected as a class-C amplifier, so that only the peaks of the grid alternating voltage are amplified.
- An ion source according to Claim 1, characterized in that a coolant flows through the HF excitation coil (1).
- An ion source according to Claim 1, characterized in that electrical lines (26, 27, 35) are introduced into the housing (19) by way of bushing-type capacitors (29 to 32).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4019729 | 1990-06-21 | ||
DE4019729A DE4019729A1 (en) | 1990-06-21 | 1990-06-21 | ION SOURCE |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0462377A2 EP0462377A2 (en) | 1991-12-27 |
EP0462377A3 EP0462377A3 (en) | 1992-05-13 |
EP0462377B1 true EP0462377B1 (en) | 1996-05-22 |
Family
ID=6408764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP91106642A Expired - Lifetime EP0462377B1 (en) | 1990-06-21 | 1991-04-25 | Ion source |
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US (1) | US5124526A (en) |
EP (1) | EP0462377B1 (en) |
JP (1) | JPH06342637A (en) |
DE (2) | DE4019729A1 (en) |
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DE4242894A1 (en) * | 1992-12-18 | 1994-06-23 | Leybold Ag | Multiple HF line to cathode feeding device |
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US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
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AU2010349784B2 (en) | 2010-03-31 | 2015-01-15 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
CA2794902A1 (en) | 2010-03-31 | 2011-10-06 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
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US3814983A (en) * | 1972-02-07 | 1974-06-04 | C Weissfloch | Apparatus and method for plasma generation and material treatment with electromagnetic radiation |
US3958883A (en) * | 1974-07-10 | 1976-05-25 | Baird-Atomic, Inc. | Radio frequency induced plasma excitation of optical emission spectroscopic samples |
US4381453A (en) * | 1980-12-31 | 1983-04-26 | International Business Machines Corporation | System and method for deflecting and focusing a broad ion beam |
US4629940A (en) * | 1984-03-02 | 1986-12-16 | The Perkin-Elmer Corporation | Plasma emission source |
DE3729347A1 (en) * | 1986-09-05 | 1988-03-17 | Mitsubishi Electric Corp | PLASMA PROCESSOR |
US4795880A (en) * | 1986-09-11 | 1989-01-03 | Hayes James A | Low pressure chemical vapor deposition furnace plasma clean apparatus |
DE3632340C2 (en) * | 1986-09-24 | 1998-01-15 | Leybold Ag | Inductively excited ion source |
-
1990
- 1990-06-21 DE DE4019729A patent/DE4019729A1/en not_active Withdrawn
-
1991
- 1991-02-28 US US07/662,259 patent/US5124526A/en not_active Expired - Fee Related
- 1991-04-25 DE DE59107831T patent/DE59107831D1/en not_active Expired - Fee Related
- 1991-04-25 EP EP91106642A patent/EP0462377B1/en not_active Expired - Lifetime
- 1991-06-21 JP JP3177684A patent/JPH06342637A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0462377A3 (en) | 1992-05-13 |
DE59107831D1 (en) | 1996-06-27 |
US5124526A (en) | 1992-06-23 |
JPH06342637A (en) | 1994-12-13 |
DE4019729A1 (en) | 1992-01-02 |
EP0462377A2 (en) | 1991-12-27 |
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