EP0341768A3 - Mémoire EPROM utilisant des tensions de programmation provenant d'une seule source de tension faible - Google Patents

Mémoire EPROM utilisant des tensions de programmation provenant d'une seule source de tension faible Download PDF

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Publication number
EP0341768A3
EP0341768A3 EP19890201022 EP89201022A EP0341768A3 EP 0341768 A3 EP0341768 A3 EP 0341768A3 EP 19890201022 EP19890201022 EP 19890201022 EP 89201022 A EP89201022 A EP 89201022A EP 0341768 A3 EP0341768 A3 EP 0341768A3
Authority
EP
European Patent Office
Prior art keywords
power supply
eprom memory
low voltage
voltage power
single low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19890201022
Other languages
German (de)
English (en)
Other versions
EP0341768A2 (fr
Inventor
Roberto Gastaldi
Marco Dallabora
Giulio Casagrande
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of EP0341768A2 publication Critical patent/EP0341768A2/fr
Publication of EP0341768A3 publication Critical patent/EP0341768A3/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
EP19890201022 1988-05-11 1989-04-20 Mémoire EPROM utilisant des tensions de programmation provenant d'une seule source de tension faible Withdrawn EP0341768A3 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT20540/88A IT1217565B (it) 1988-05-11 1988-05-11 Memoria eprom utilizzante tensioni di programmazione ricavate da un'unica bassa tensione di alimentazione
IT2054088 1988-05-11

Publications (2)

Publication Number Publication Date
EP0341768A2 EP0341768A2 (fr) 1989-11-15
EP0341768A3 true EP0341768A3 (fr) 1991-10-02

Family

ID=11168487

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890201022 Withdrawn EP0341768A3 (fr) 1988-05-11 1989-04-20 Mémoire EPROM utilisant des tensions de programmation provenant d'une seule source de tension faible

Country Status (3)

Country Link
EP (1) EP0341768A3 (fr)
JP (1) JPH02223098A (fr)
IT (1) IT1217565B (fr)

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS. vol. SC-19, no. 1, February 1984, NEW YORK US pages 135 - 143; MC CREARY ET AL.: 'TECHNIQUES FOR A 5V-ONLY 64K EPROM BASED UPON SUBSTRATE HOT-ELECTRON INJECTION ' *
INTERNATIONAL ELECTRONIC DEVICES MEETING December 1983, WASHINGTON, DC USA pages 570 - 573; OHYA ET AL.: 'SINGLE 5V EPROM WITH SUB-MICRON MEMORY TRANSISTOR AND ON-CHIP HIGH VOLTAGE GENERATOR ' *

Also Published As

Publication number Publication date
JPH02223098A (ja) 1990-09-05
EP0341768A2 (fr) 1989-11-15
IT1217565B (it) 1990-03-30
IT8820540A0 (it) 1988-05-11

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