EP0282037A3 - Verfahren zur Herstellung von hochreinem, polykristallinem Silizium - Google Patents

Verfahren zur Herstellung von hochreinem, polykristallinem Silizium Download PDF

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Publication number
EP0282037A3
EP0282037A3 EP88103728A EP88103728A EP0282037A3 EP 0282037 A3 EP0282037 A3 EP 0282037A3 EP 88103728 A EP88103728 A EP 88103728A EP 88103728 A EP88103728 A EP 88103728A EP 0282037 A3 EP0282037 A3 EP 0282037A3
Authority
EP
European Patent Office
Prior art keywords
polycrystalline silicon
high purity
preparing high
purity polycrystalline
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP88103728A
Other languages
English (en)
French (fr)
Other versions
EP0282037A2 (de
Inventor
Hiroshi Ikeda
Makoto Tsunashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Publication of EP0282037A2 publication Critical patent/EP0282037A2/de
Publication of EP0282037A3 publication Critical patent/EP0282037A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
EP88103728A 1987-03-11 1988-03-09 Verfahren zur Herstellung von hochreinem, polykristallinem Silizium Withdrawn EP0282037A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP54197/87 1987-03-11
JP62054197A JPS63222011A (ja) 1987-03-11 1987-03-11 多結晶シリコンの製造方法

Publications (2)

Publication Number Publication Date
EP0282037A2 EP0282037A2 (de) 1988-09-14
EP0282037A3 true EP0282037A3 (de) 1989-02-08

Family

ID=12963816

Family Applications (1)

Application Number Title Priority Date Filing Date
EP88103728A Withdrawn EP0282037A3 (de) 1987-03-11 1988-03-09 Verfahren zur Herstellung von hochreinem, polykristallinem Silizium

Country Status (3)

Country Link
EP (1) EP0282037A3 (de)
JP (1) JPS63222011A (de)
KR (1) KR880011017A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997637A (en) * 1993-06-18 1999-12-07 Nippon Oil Co., Ltd. Method of producing a semiconducting material
DE69421007T2 (de) * 1993-06-18 2000-01-27 Nippon Oil Co Ltd Verfahren zur Herstellung eines Halbleitermaterials
DE19529518A1 (de) * 1994-08-10 1996-02-15 Tokuyama Corp Polykristallines Silizium und Verfahren zu dessen Herstellung
DE102005024041A1 (de) 2005-05-25 2006-11-30 City Solar Ag Verfahren zur Herstellung von Silicium aus Halogensilanen
DE102006009954A1 (de) 2006-03-03 2007-09-06 Wacker Chemie Ag Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes
DE102006043929B4 (de) 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
DE102008025264A1 (de) * 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Granulares Silicium
DE102008036143A1 (de) 2008-08-01 2010-02-04 Berlinsolar Gmbh Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
WO2010031390A1 (de) 2008-09-17 2010-03-25 Rev Renewable Energy Ventures, Inc. Verfahren zur herstellung von halogenierten oligomeren und/oder halogenierten polymeren von elementen der iii. bis v. hauptgruppe
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen
DE102010043649A1 (de) 2010-11-09 2012-05-10 Evonik Degussa Gmbh Verfahren zur Spaltung höherer Silane
DE102013207444A1 (de) * 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen
DE102013207447A1 (de) * 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren und Vorrichtung zur Herstellung von Octachlortrisilan
CA3029903C (en) 2016-07-06 2020-12-22 Ihi Corporation Method of producing a silicon compound material and apparatus for producing a silicon compound material

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1125277A (fr) * 1954-06-13 1956-10-29 Siemens Ag Procédé de préparation de substances cristallines très pures, de préférence pour leur emploi comme dispositifs de semi-conduction, et dispositifs conformes à ceuxobtenus
DE1045995B (de) * 1953-12-23 1958-12-11 Siemens Ag Verfahren zur Herstellung von reinstem Silicium
FR2351051A1 (fr) * 1976-05-11 1977-12-09 Wacker Chemitronic Procede de preparation de silicium tres pur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1045995B (de) * 1953-12-23 1958-12-11 Siemens Ag Verfahren zur Herstellung von reinstem Silicium
FR1125277A (fr) * 1954-06-13 1956-10-29 Siemens Ag Procédé de préparation de substances cristallines très pures, de préférence pour leur emploi comme dispositifs de semi-conduction, et dispositifs conformes à ceuxobtenus
FR2351051A1 (fr) * 1976-05-11 1977-12-09 Wacker Chemitronic Procede de preparation de silicium tres pur

Also Published As

Publication number Publication date
KR880011017A (ko) 1988-10-25
JPS63222011A (ja) 1988-09-14
EP0282037A2 (de) 1988-09-14

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