EP0273320A1 - Edge breakdown protection in alternating current electroluminescent thin film display - Google Patents

Edge breakdown protection in alternating current electroluminescent thin film display Download PDF

Info

Publication number
EP0273320A1
EP0273320A1 EP87118861A EP87118861A EP0273320A1 EP 0273320 A1 EP0273320 A1 EP 0273320A1 EP 87118861 A EP87118861 A EP 87118861A EP 87118861 A EP87118861 A EP 87118861A EP 0273320 A1 EP0273320 A1 EP 0273320A1
Authority
EP
European Patent Office
Prior art keywords
thin film
stripe
dielectric
dielectric material
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP87118861A
Other languages
German (de)
French (fr)
Inventor
Mohamed I. Abdalla
Lawrence L. Hope
Timothy Fohl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Sylvania Inc
Original Assignee
GTE Products Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTE Products Corp filed Critical GTE Products Corp
Publication of EP0273320A1 publication Critical patent/EP0273320A1/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes

Definitions

  • Matrix AC electroluminescent (ACEL) thin film displays are usually fabricated as a multilayer stack comprising a first dielectric layer; a phosphor (e.g., ZnS:Mn) layer; and a second dielectric layer; on a glass substrate with parallel stripes of etched transparent (e.g., indium-tin-oxide or ITO) electrodes or conductors.
  • ITO indium-tin-oxide
  • the front and rear electrode structures are sets of parallel lines, with the front transparent set (columns) orthogonal to the rear set (rows).
  • dielectric material plays a significant role in the function and reliability of the ACEL thin film display. Good dielectric constant and breakdown strength are required.
  • ACEL displays Many fabrication techniques for ACEL displays have been reported, including electron beam, sputtering, thermal evaporation, atomic layer epitaxy, or a combination of these methods.
  • the most important parameter for assessing a material is the density of electric charge it can hold without breaking down.
  • charge density at breakdown should exceed about 3 micro coloumbs/square cm.
  • zinc sulfide will luminesce when the charge density reaches about 1.2 micro coloumbs/square cm.
  • the resolution of the display i.e., the number of lines that can be charged during a row address period is inversely proportional to the duty cycle, which is about 0.2% for a 512 line display.
  • the time allowed to charge all 512 rows is 16 millisec., so the time allocated for a single row is 0.2% of 16 millisec. or 32 microsec.
  • Refresh rate must be at least 60 Hz to avoid flicker.
  • luminance is linearly dependent on frequency. At higher frequencies, luminance is limited by phosphor decay time.
  • the stability of the electrical and optical characteristics of the device is also an area of practical concern.
  • Nonuniformity in operation can also occur if ITO sheet resistance is too high for the display size and resolution. The magnitude of this problem increases rapidly with display size.
  • Electrode deposition procedures should provide smooth rows and columns free of shorts or opens.
  • the present invention is thus directed to novel AC thin film electroluminescent display devices employing a protective dielectric stripe along the edges of the transparent electrode (or conductor).
  • the present invention is directed to an AC thin film electroluminescent display device comprising: a multilayer stack including a first dielectric layer; a phosphor layer; and a second dielectric layer; situated on a glass substrate which includes parallel stripes of etched transparent conductors; said multilayer stack further including a protective stripe of dielectric material placed at least along the edges of the transparent conductors.
  • the present invention is also directed to a method for protecting an AC thin film electroluminescent display device against premature breakdown at the edges of the transparent conductors.
  • This protection is achieved by depositing a stripe of dielectric material along the edges of the transparent conductors.
  • the present invention is directed to protecting electroluminescent thin film displays, particularly AC driven electroluminescent (ACEL) displays, from premature edge breakdown, and to the protected display devices.
  • ACL AC driven electroluminescent
  • FIG 1 illustrates a conventional ACEL stack.
  • the substrate 10 is typically glass.
  • the first layer on the substrate is the transparent electrode (or conductor) layer 12, which is typically an ITO film of about 3000 Angstroms thickness.
  • first dielectric layer 14 Contiguous with the ITO layer is a first dielectric layer 14, which may comprise materials selected from, for example, Y2O3, Si3N4 and/or Al2O3.
  • the phosphor layer 16 is sandwiched between the first dielectric layer 14 and the second dielectric layer 18.
  • the phosphor layer is typically about 5000 Angstroms thick and may comprise materials such as ZnS:Mn, and the like.
  • the conventional ACEL stack shown in Figure 1 requires a high electric field, for example, greater than about 106 volts/cm to produce light.
  • the sharp step at the etched transparent electrodes is found to be a source of electric field intensification.
  • the edge protecting stripe need only be placed at the position on the edges of the transparent conductors requiring such protection. It need not, for example, as illustrated in Figure 3, fill the gap between the transparent electrodes, although if this does occur, it is not detrimental to the edge protection provided thereby.
  • this dielectric stripe can be made of sufficient width and thickness to reduce the value of the electric field at the edges of the transparent conductor.
  • the "sufficient thickness" of the edge protecting dielectric stripe has been determined to range from about 200 to 1,000, preferably about 500 Angstroms.
  • the width of the stripe need only cover the edge of the transparent conductor. In the exemplified embodiment, this translated to a width of about 7 microns. In other cases, larger or smaller widths may be necessary. In most cases, the thickness of the stripe should be sufficient to reduce the electric field at the edge, preferably between 20 to 50 percent. The width, so long as the edge is covered, does not generally effect the desired result.
  • the thickness of the edge protecting dielectric stripe may vary from the values applicable to the device of Figure 1. However, upon consideration of the present disclosure, the skilled artisan will readily be able to determine the appropriate "sufficient thickness" for any particular application.
  • the transparent conductor was etched into parallel stripes of about 180 microns wide. Subsequently the edge protection layer was deposited through a photomask using conventional lift off photolithography technique.
  • the photomask was properly aligned to cover about 166 microns of the transparent electrode, thereby leaving about 7 microns on each side of the transparent electrode to be covered by the edge protection dielectric layer.
  • the edge protection dielectric layer used in this case was Al2O3, which was deposited by electron beam technique to a thickness of about 500 Angstroms.
  • the substrate was maintained at room temperature during film deposition. After depositing the edge protecting dielectric stripe, the photomask was removed by dissolving it in acetone.
  • the other layers were deposited, i.e., the first dielectric, the phosphor layer, the second dielectric and the rear electrode, to complete the thin film electroluminescent stack.

Abstract

The present invention is directed to novel AC thin film electroluminescent display devices employing a protective dielectric stripe along the edges of the transparent electrode (or conductor). In particular, the present invention is directed to an AC thin film electroluminescent display device comprising:
    a multilayer stack including a first dielectric layer; a phosphor layer; and a second dielectric layer; situated on a glass substrate which includes parallel stripes of etched transparent conductors;
    said multilayer stack further including a protective stripe of dielectric material placed at least along the edges of the transparent conductors.
The present invention is also directed to a method for protecting an AC thin film electroluminescent display device against premature breakdown at the edges of the transparent conductors. This protection is achieved by depositing a stripe of dielectric material along the edges of the transparent conductors.

Description

    STATEMENT OF GOVERNMENT INTEREST
  • The Government of the United States of America has certain rights to this invention pursuant to Contract No. DAAK20-82-C-0400 awarded by the Department of the Army.
  • BACKGROUND OF THE INVENTION
  • Matrix AC electroluminescent (ACEL) thin film displays are usually fabricated as a multilayer stack comprising a first dielectric layer; a phosphor (e.g., ZnS:Mn) layer; and a second dielectric layer; on a glass substrate with parallel stripes of etched transparent (e.g., indium-tin-oxide or ITO) electrodes or conductors. (The terms "conductor" and "electrode" are used herein interchangably).
  • Successive dielectric/phosphor/dielectric thin film layers are subsequently deposited to form the heart of the electroluminescent display. Aluminum metal electrodes are finally deposited and etched into parallel stripes orthogonal to the transparent conductor stripes to complete the thin film structure of the ACEL display.
  • For matrix displays, the front and rear electrode structures are sets of parallel lines, with the front transparent set (columns) orthogonal to the rear set (rows).
  • The choice of dielectric material plays a significant role in the function and reliability of the ACEL thin film display. Good dielectric constant and breakdown strength are required.
  • Many fabrication techniques for ACEL displays have been reported, including electron beam, sputtering, thermal evaporation, atomic layer epitaxy, or a combination of these methods.
  • The goal of preparing a large thin film electroluminescent panel capable of displaying a full page of text or high resolution graphics has been pursued vigorously over the past few years. See for example, M.R. Miller et al., "A Large-Area Electroluminescent Display With MAtrix Addressing for Full Video," SID 86 Digest, pp. 167-170 (1986); M.I. Abdalla et al., "Yield Analysis for Electroluminescent Panel Development," SPIE Vol. 256, Advances in Display Technology V, pp. 83-88 (1985); and L.E. Tannas et al., "ACTFEL Displays," SID 82 Digest, pp. 122-123 (1982).
  • The most important parameter for assessing a material is the density of electric charge it can hold without breaking down. The charge density at breakdown is given by the product of the static dielectric constant and the breakdown field:
        Qbd = ε Ebd
  • This quantity is thickness dependent. For films in the range of about 200 to 400 nm, charge density at breakdown should exceed about 3 micro coloumbs/square cm. For example, zinc sulfide will luminesce when the charge density reaches about 1.2 micro coloumbs/square cm.
  • The resolution of the display, i.e., the number of lines that can be charged during a row address period is inversely proportional to the duty cycle, which is about 0.2% for a 512 line display.
  • At 60 Hz, the time allowed to charge all 512 rows is 16 millisec., so the time allocated for a single row is 0.2% of 16 millisec. or 32 microsec. Refresh rate must be at least 60 Hz to avoid flicker.
  • Below 1 kHz, luminance is linearly dependent on frequency. At higher frequencies, luminance is limited by phosphor decay time.
  • The stability of the electrical and optical characteristics of the device is also an area of practical concern.
  • One major difficulty in fabrication of ACEL displays is the precise thickness control required in depositing the complex EL stack. High rate production is particularly demanding. Film thickness variation is manifested as drive voltage variation across the panel. For practical use, film thickness should be maintained within about 12%.
  • Nonuniformity in operation can also occur if ITO sheet resistance is too high for the display size and resolution. The magnitude of this problem increases rapidly with display size.
  • All layers should be as clean as possible with minimum density of defects caused by particulate or pinholes to avoid premature breakdown. Integrity of the electrode system has a critical effect on yield. Electrode deposition procedures should provide smooth rows and columns free of shorts or opens.
  • Prior to the present discovery, rounded or beveled edges were employed on the ITO layer to improve step coverage, reduce electric field concentration, and to prevent breakdown at the column edges. However, in terms of edge breakdown protection, this method was inadequate. The present invention solves this problem.
  • SUMMARY OF THE INVENTION
  • The present invention is thus directed to novel AC thin film electroluminescent display devices employing a protective dielectric stripe along the edges of the transparent electrode (or conductor).
  • In particular, the present invention is directed to an AC thin film electroluminescent display device comprising:
        a multilayer stack including a first dielectric layer; a phosphor layer; and a second dielectric layer; situated on a glass substrate which includes parallel stripes of etched transparent conductors;
        said multilayer stack further including a protective stripe of dielectric material placed at least along the edges of the transparent conductors.
  • The present invention is also directed to a method for protecting an AC thin film electroluminescent display device against premature breakdown at the edges of the transparent conductors.
  • This protection is achieved by depositing a stripe of dielectric material along the edges of the transparent conductors.
  • BRIEF DESCRIPTION OF THE DRAWINGS
    • Figure 1 illustrates the basic structure of an AC driven thin film electroluminescent stack;
    • Figure 2 illustrates the electric field intensification at the edge of the transparent electrode.
    • Figure 3 illustrates the effect on the electric field intensification at the transparent electrode edges when using the supplementary edge protection of the present invention (Note: it is eliminated).
    DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • The present invention is directed to protecting electroluminescent thin film displays, particularly AC driven electroluminescent (ACEL) displays, from premature edge breakdown, and to the protected display devices.
  • Figure 1 illustrates a conventional ACEL stack. The substrate 10 is typically glass. As illustrated, the first layer on the substrate is the transparent electrode (or conductor) layer 12, which is typically an ITO film of about 3000 Angstroms thickness.
  • Contiguous with the ITO layer is a first dielectric layer 14, which may comprise materials selected from, for example, Y₂O₃, Si₃N₄ and/or Al₂O₃. The phosphor layer 16 is sandwiched between the first dielectric layer 14 and the second dielectric layer 18. The phosphor layer is typically about 5000 Angstroms thick and may comprise materials such as ZnS:Mn, and the like. A metal electrode 20, such as aluminum, completes the ACEL stack.
  • The conventional ACEL stack shown in Figure 1 requires a high electric field, for example, greater than about 10⁶ volts/cm to produce light. The sharp step at the etched transparent electrodes is found to be a source of electric field intensification.
  • This electric field intensification is thought to be due to the fact that the stack is thinner at the edges of the transparent conductor as depicted in Figure 2. When voltage above a certain threshold value is applied, the area along the edges of the transparent conductor are found to light up first.
  • In view of Figure 2, the electric field at the edge (E₁) may be defined by the equation:

        E₁ =
    Figure imgb0001


    while the electric field within the pixel (E₂) may be defined by the equation:

        E₂ =
    Figure imgb0002


    wherein V/d₁ is greater than V/d₂.
  • Increasing the electric field across the display to achieve the required brightness level can result in a premature breakdown at the above mentioned edges. The transparent conductor column is thus permanently interrupted at the location where breakdown occurs. This results therefore, in the loss of a whole column, or part of it, and consequently reduces the quality and the overall appearance of the display.
  • It has been discovered that the probability of such breakdown occurring can be substantially reduced or totally eliminated by depositing a dielectric stripe along the edges of the transparent conductor.
  • One preferred example of such an edge protecting dielectric stripe is illustrated in Figure 3.
  • Advantageously, the edge protecting stripe need only be placed at the position on the edges of the transparent conductors requiring such protection. It need not, for example, as illustrated in Figure 3, fill the gap between the transparent electrodes, although if this does occur, it is not detrimental to the edge protection provided thereby.
  • It has further been discovered that this dielectric stripe can be made of sufficient width and thickness to reduce the value of the electric field at the edges of the transparent conductor.
  • In ACEL display devices of the type illustrated in Figure 1, the "sufficient thickness" of the edge protecting dielectric stripe has been determined to range from about 200 to 1,000, preferably about 500 Angstroms. The width of the stripe need only cover the edge of the transparent conductor. In the exemplified embodiment, this translated to a width of about 7 microns. In other cases, larger or smaller widths may be necessary. In most cases, the thickness of the stripe should be sufficient to reduce the electric field at the edge, preferably between 20 to 50 percent. The width, so long as the edge is covered, does not generally effect the desired result.
  • For other ACEL display devices, the thickness of the edge protecting dielectric stripe may vary from the values applicable to the device of Figure 1. However, upon consideration of the present disclosure, the skilled artisan will readily be able to determine the appropriate "sufficient thickness" for any particular application.
  • In addition, while the preferred dielectric material of the present invention, namely Al₂O₃, when employed in the Figure 1 type ACEL display device has the "sufficient thickness" values described above, a change in dielectric material may also necessitate an appropriate adjustment in the values applicable to the "sufficient thickness" thereof. Again, based upon the present disclosure, the skilled artisan will readily be able to determine these values.
  • As illustrated in Figure 3, when the edge protecting stripe of the present invention is added to the ACEL electrode edge, the following equation is satisfied:

        E₁ (
    Figure imgb0003
    < E₂ (
    Figure imgb0004

  • Thus, the possibility of edge breakdown occurring under the normal ACEL display driving conditions can be totally eliminated.
  • The present invention will be further illustrated with reference to the following example which will aid in the understanding of the present invention, but which is not to be construed as a limitation thereof. All percentages reported herein, unless otherwise specified, are percent by weight. All temperatures are expressed in degrees Celsius.
  • EXAMPLE
  • The transparent conductor was etched into parallel stripes of about 180 microns wide. Subsequently the edge protection layer was deposited through a photomask using conventional lift off photolithography technique.
  • The photomask was properly aligned to cover about 166 microns of the transparent electrode, thereby leaving about 7 microns on each side of the transparent electrode to be covered by the edge protection dielectric layer.
  • The edge protection dielectric layer used in this case was Al₂O₃, which was deposited by electron beam technique to a thickness of about 500 Angstroms. The substrate was maintained at room temperature during film deposition. After depositing the edge protecting dielectric stripe, the photomask was removed by dissolving it in acetone.
  • Subsequently the other layers were deposited, i.e., the first dielectric, the phosphor layer, the second dielectric and the rear electrode, to complete the thin film electroluminescent stack.
  • The present invention has been described in detail, including the preferred embodiments thereof. However, it will be appreciated that those skilled in the art, upon consideration of the present disclosure, may make modifications and/or improvements on this invention and still be within the scope and spirit of this invention as set forth in the following claims.

Claims (11)

1. An AC thin film electroluminescent display device comprising:
      a multilayer stack including a first dielectric layer; a phosphor layer; and a second dielectric layer; situated on a glass substrate which includes parallel stripes of etched transparent conductors;
      said multilayer stack further including a protective stripe of dielectric material placed at least along the edges of the transparent conductors.
2. The AC thin film electroluminescent display device of claim 1, wherein the protective stripe of dielectric material at least partially fills the spaces between the parallel stripes of the etched transparent conductors.
3. The AC thin film electroluminescent display device of claim 2, wherein the protective stripe of dielectric material is selected from the group consisting of Y₂O₃, Si₃N₄, Al₂O₃, or any combination thereof.
4. The AC thin film electroluminescent display device of claim 3, wherein the protective stripe of dielectric material is Al₂O₃.
5. The AC thin film electroluminescent display device of claim 4, wherein the thickness of the protective stripe of dielectric material is from about 200 to about 1000 Angstroms.
6. The AC thin film electroluminescent display device of claim 5, wherein the thickness of the protective stripe of dielectric material is about 500 Angstroms.
7. A method for protecting an AC thin film electroluminescent display device against premature breakdown at the edges of the transparent electrodes comprising depositing a sufficient thickness of a protective stripe of dielectric material along the edges of the transparent electrodes.
8. The method of claim 7, wherein the protective stripe of dielectric material is selected from the group consisting of Y₂O₃, Si₃N₄, Al₂O₃, or any combination thereof.
9. The method of claim 8, wherein the dielectric material of the protective stripe is Al₂O₃.
10. The method of claim 9, wherein the thickness of the protective dielectric stripe is from about 500 to about 1000 Angstroms.
11. The method of claim 10, wherein the thickness of the protective dielectric stripe is about 500 Angstroms.
EP87118861A 1986-12-19 1987-12-18 Edge breakdown protection in alternating current electroluminescent thin film display Withdrawn EP0273320A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94469286A 1986-12-19 1986-12-19
US944692 1986-12-19

Publications (1)

Publication Number Publication Date
EP0273320A1 true EP0273320A1 (en) 1988-07-06

Family

ID=25481889

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87118861A Withdrawn EP0273320A1 (en) 1986-12-19 1987-12-18 Edge breakdown protection in alternating current electroluminescent thin film display

Country Status (3)

Country Link
EP (1) EP0273320A1 (en)
JP (1) JPS63234285A (en)
FI (1) FI875585A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5400047A (en) * 1993-11-10 1995-03-21 Beesely; Dwayne E. High brightness thin film electroluminescent display with low OHM electrodes
US7911137B2 (en) 2005-01-07 2011-03-22 Mflex Uk Limited Electroluminescent displays including an intermediate diffusing layer between an electrode and a layer of electroluminescent material
DE10234178B4 (en) * 2001-07-26 2012-03-01 Osram Opto Semiconductors Gmbh Method for producing an OLED device with a reinforced substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111566A1 (en) * 1982-05-19 1984-06-27 Matsushita Electric Industrial Co., Ltd. Electroluminescent display unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111566A1 (en) * 1982-05-19 1984-06-27 Matsushita Electric Industrial Co., Ltd. Electroluminescent display unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5400047A (en) * 1993-11-10 1995-03-21 Beesely; Dwayne E. High brightness thin film electroluminescent display with low OHM electrodes
DE10234178B4 (en) * 2001-07-26 2012-03-01 Osram Opto Semiconductors Gmbh Method for producing an OLED device with a reinforced substrate
US7911137B2 (en) 2005-01-07 2011-03-22 Mflex Uk Limited Electroluminescent displays including an intermediate diffusing layer between an electrode and a layer of electroluminescent material
GB2437015B (en) * 2005-01-07 2011-05-18 Pelikon Ltd Electroluminescent displays

Also Published As

Publication number Publication date
FI875585A (en) 1988-06-20
FI875585A0 (en) 1987-12-18
JPS63234285A (en) 1988-09-29

Similar Documents

Publication Publication Date Title
US4758765A (en) Black layer for thin film EL display device
US5346776A (en) Electroluminescent panel
US4983880A (en) Edge breakdown protection in ACEL thin film display
US5084650A (en) Thin-film el display device having a high-contrast ratio
US6403204B1 (en) Oxide phosphor electroluminescent laminate
US5289171A (en) Color display apparatus
GB2106317A (en) Electroluminescent display devices
US4727004A (en) Thin film electroluminescent device
US5721562A (en) Electroluminescent display device including a columnar crystal structure insulating film
CN1820551B (en) Aluminum nitride passivated phosphors for electroluminescent displays
EP0273320A1 (en) Edge breakdown protection in alternating current electroluminescent thin film display
EP0313656B1 (en) Color display device
US4672264A (en) High contrast electroluminescent display panels
Cattell et al. Electroluminescence from films of ZnS: Mn prepared by organometallic chemical vapor deposition
US4859904A (en) High contrast electroluminescent displays
EP0219940A1 (en) Electroluminescent devices
JP4100187B2 (en) Plasma display panel
EP0163351B1 (en) Thin film electroluminescent device
KR100330780B1 (en) Panels for flat panel display
KR100380887B1 (en) Thin film phosphors panel for flat panel display and method of foming the same
JPH027072B2 (en)
GB2176340A (en) High contrast electroluminescent displays
JPS63138693A (en) Electroluminescent fluorescence panel
Törnqvist Recent Development Trends in Thin Film Electroluminescent Displays
CA2362748A1 (en) Thin-film electroluminescent device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19871218

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB

17Q First examination report despatched

Effective date: 19910409

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19920701