EP0250940A1 - Method for hermetically joining two metallic vessel parts together - Google Patents

Method for hermetically joining two metallic vessel parts together Download PDF

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Publication number
EP0250940A1
EP0250940A1 EP87108254A EP87108254A EP0250940A1 EP 0250940 A1 EP0250940 A1 EP 0250940A1 EP 87108254 A EP87108254 A EP 87108254A EP 87108254 A EP87108254 A EP 87108254A EP 0250940 A1 EP0250940 A1 EP 0250940A1
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EP
European Patent Office
Prior art keywords
housing parts
metal
vacuum chamber
vacuum
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP87108254A
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German (de)
French (fr)
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EP0250940B1 (en
Inventor
Norbert Bischof
Hans Stübler
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Licentia Patent Verwaltungs GmbH
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Licentia Patent Verwaltungs GmbH
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Publication of EP0250940A1 publication Critical patent/EP0250940A1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/26—Sealing together parts of vessels
    • H01J9/263—Sealing together parts of vessels specially adapted for cathode-ray tubes

Definitions

  • the present invention relates to a method according to the preamble of patent claim 1.
  • the vacuum sealing technology in the production of image intensifier wafer tubes takes place in a high vacuum chamber after the individual components of the tube, such as a fluorescent screen, microchannel plate, cathode support, etc., are soldered or cold pressed with indium as a solder in this high vacuum chamber.
  • the solder connection has the disadvantage that when the system is released, gases released can also degrade the vacuum in the wafer tube itself. If temperatures are used which are so low that the indium does not melt, very long processing times are required without being able to ensure that sufficient degassing has taken place. If you use higher temperatures, e.g. B. up to 400 ° C, at which the indium solder melts, alloys can occur which lead to a change in the structure, which in turn make difficulties in the subsequent cold pressing.
  • the present invention is based on the object of specifying a novel connection technique for a vacuum-tight closure of the housing parts, in particular a wafer image intensifier tube, which allows high degassing temperatures to be used and leads to tubes with an improved service life.
  • a major advantage of the invention is seen in the fact that the risk of contamination within the finished tube by residual gases is largely reduced and, on the other hand, a secure and permanent closure is ensured.
  • the figure shows schematically a half of a substantially rotationally symmetrical wafer picture tube 9 with an input disk 10, on the inner surface 13 of which the photocathode is located and with a fiber optic output window 11, on the inner surface of which there is a phosphor layer 12.
  • a microchannel plate 14 is arranged as a secondary electron amplifier.
  • the individual components, in particular the input and output windows 10 and 11, are connected to flange-like housing parts 7 and 8 made of metal, in particular by soldering or fusing.
  • the flange-like housing parts are then connected to one another within a vacuum chamber in the manner described above. Only one window 6 of the vacuum chamber is shown.
  • the housing parts are connected after a system bake-out temperature treatment that is up to over 400 ° C.
  • the tube housing which is not yet connected in a vacuum-tight manner, is already in the vacuum chamber.
  • the microchannel plate and the input and output windows are already connected to the individual metal housing parts.
  • the annular flange-like metal housing parts 7 and 8 preferably consist of an iron-nickel-cobalt compound.
  • a thin gold or copper ring 4 is inserted between the surfaces of the flanges 7, 8.
  • Correspondingly shaped press rams 3 and counter bearings 2 are also located in the vacuum chamber, which serve to exert greater pressure on the two flange parts 7 and 8.
  • the two flange parts are pressed firmly together by this pressure.
  • the interposed ductile metal parts 4 made of gold or copper deform in the process and result in a type of cold-soldered connection. The dimensions of the tube are largely fixed and sealed.
  • the tube placed on a rotating device 5 is now further rotated within the vacuum chamber in the presence of a vacuum.
  • a laser 1 located outside the vacuum chamber generates a laser beam 15 which is deflected and focused on the seam of the cold-pressed flange 7, 8 by means of collecting optics 16.
  • the material of the two flange parts 7 and 8 is welded together on the circumference.
  • the intensity of the laser beam and the speed of rotation of the turntable 5 are matched accordingly.
  • the cross section of the laser beam 15 is selected in the plane of the window 6 inserted in a vacuum-tight manner in the wall of the vacuum chamber so that the thermal surface loading cannot lead to any damage to the flange 6. at a laser beam focal length of e.g. B. 150 to 200 mm focal length due to the existing beam at the window 6 a warming up of this disc is not yet taking place.
  • a laser beam focal length e.g. B. 150 to 200 mm focal length due to the existing beam at the window 6 a warming up of this disc is not yet taking place.
  • metal evaporation can occur.
  • this metal evaporation cannot get into the interior of the wafer image intensifier tube due to the cold pressing that has already taken place.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

1. Method for the vacuum-tight connection of two metallic housing parts of an electronic valve, in which method the housing parts are baked out in a vacuum chamber and each connected with the other by interposed connecting metal and application of pressure, characterised thereby, that the connecting seam is welded together in the vacuum chamber by means of a laser beam additionally after pressure connection.

Description

Die vorliegende Erfindung betrifft ein Verfahren nach dem Oberbegriff des Patentanspruchs 1.The present invention relates to a method according to the preamble of patent claim 1.

Die Vakuumverschlußtechnik bei der Herstellung von Bildverstärker-Wafer-Röhren erfolgt in einer Hoch-­Vakuumkammer, nachdem die einzelnen Bauteile der Röhre, wie Leuchtschirm, Mikrokanalplatte, Kathodenträger usw. durch eine Löt- oder Kaltverpressung mit Indium als Lot in dieser Hochvakkumkammer. Die Lötverbindung besitzt den Nachteil, daß bei dem Verschließen des Systems frei werdende Gase auch das Vakuum in der Waferröhre selbst verschlechtern kann. Verwendet man Temperaturen, die so niedrig sind, daß das Indium nicht schmilzt, so benö­tigt man sehr lange Bearbeitungszeiten, ohne sicher­stellen zu können, daß eine genügende Entgasung erfolgt ist. Verwendet man höhere Temperaturen, z. B. bis zu 400°C, bei welchen das Indiumlot schmilzt, so können Legierungen auftreten, die zu einer Änderung der Ge­fügestruktur führen, die wiederum Schwierigkeiten bei der nachfolgenden Kaltverpressung machen.The vacuum sealing technology in the production of image intensifier wafer tubes takes place in a high vacuum chamber after the individual components of the tube, such as a fluorescent screen, microchannel plate, cathode support, etc., are soldered or cold pressed with indium as a solder in this high vacuum chamber. The solder connection has the disadvantage that when the system is released, gases released can also degrade the vacuum in the wafer tube itself. If temperatures are used which are so low that the indium does not melt, very long processing times are required without being able to ensure that sufficient degassing has taken place. If you use higher temperatures, e.g. B. up to 400 ° C, at which the indium solder melts, alloys can occur which lead to a change in the structure, which in turn make difficulties in the subsequent cold pressing.

Der vorliegenden Erfindung liegt die Aufgabe zugrunde, eine neuartige Verbindungstechnik für einen vakuumdich­ten Verschluß der Gehäuseteile, insbesondere einer Wafer-Bildverstärkerröhre anzugeben, die hohe Entga-­sungstemperaturen anzuwenden gestattet und zu Röhren verbesserter Lebensdauer führt.The present invention is based on the object of specifying a novel connection technique for a vacuum-tight closure of the housing parts, in particular a wafer image intensifier tube, which allows high degassing temperatures to be used and leads to tubes with an improved service life.

Diese Aufgabe wird durch die im Kennzeichen des Patent­anspruchs 1 angegebenen Merkmale gelöst.This object is achieved by the features specified in the characterizing part of patent claim 1.

Ein wesentlicher Vorteil der Erfindung wird darin gesehen, daß die Gefahr von Verunreinigungen innerhalb der fertigen Röhre durch Restgase weitgehend vermindert ist und zum anderen ein sicherer und dauerhafter Ver­schluß sichergestellt ist.A major advantage of the invention is seen in the fact that the risk of contamination within the finished tube by residual gases is largely reduced and, on the other hand, a secure and permanent closure is ensured.

Anhand des in der Figur schematisch dargestellten bevorzugten Ausführungsbeispiels wird die Erfindung nachfolgend näher erklärt.The invention is explained in more detail below on the basis of the preferred exemplary embodiment shown schematically in the figure.

Die Figur zeigt schematisch eine Hälfte einer im we­sentlichen rotationssymmetrisch aufgebauten Wafer-Bild­röhre 9 mit einer Eingangsscheibe 10, auf deren Innen­fläche 13 sich die Photokathode befindet und mit einem Fiberoptik-Ausgangsfenster 11, auf dessen Innenfläche sich eine Leuchtstoffschicht 12 befindet. Dazwischen ist eine Mikrokanalplatte 14 als Sekundärelektronenver­stärker angeordnet. Die einzelnen Bauteile, insbeson­dere die Eingangs- und Ausgangsfenster 10 und 11 sind mit flanschartigen Gehäuseteilen 7 und 8 aus Metall, insbesondere durch Löten oder Verschmelzen verbunden. Die flanschartigen Gehäuseteile werden dann innerhalb einer Vakuumkammer in der vorbeschriebenen Weise mit­einander verbunden. Von der Vakuumkammer ist lediglich ein Fenster 6 dargestellt.The figure shows schematically a half of a substantially rotationally symmetrical wafer picture tube 9 with an input disk 10, on the inner surface 13 of which the photocathode is located and with a fiber optic output window 11, on the inner surface of which there is a phosphor layer 12. In between, a microchannel plate 14 is arranged as a secondary electron amplifier. The individual components, in particular the input and output windows 10 and 11, are connected to flange-like housing parts 7 and 8 made of metal, in particular by soldering or fusing. The flange-like housing parts are then connected to one another within a vacuum chamber in the manner described above. Only one window 6 of the vacuum chamber is shown.

Die Verbindung der Gehäuseteile erfolgt nach einer Systemausheiz-Temperaturbehandlung, die bis über 400°C beträgt. Dabei befindet sich das noch nicht vakuumdicht verbundene Röhrengehäuse bereits in der Vakuumkammer. Die Mikrokanalplatte und die Eingangs- und Ausgangs­fenster sind bereits mit den einzelnen metallenen Gehäuseteilen verbunden. Die ringförmigen flanscharti­gen metallenen Gehäuseteile 7 und 8 bestehen bevorzugt aus einer Eisen-Nickel-Kobalt-Verbindung. Zwischen die Flächen der Flansche 7, 8 wird ein dünner Gold- oder Kupferring 4 eingelegt. In der Vakuumkammer befinden sich weiterhin entsprechend geformte Preßstempel 3 und Gegenlager 2, die dazu dienen, einen stärkeren Druck auf die beiden Flanschteile 7 und 8 auszuüben. Durch diesen Druck werden die beiden Flanschteile fest mit­einander verpreßt. Die zwischengelegten duktilen Me­tallteile 4 aus Gold oder Kupfer verformen sich dabei und ergeben eine Art Kalt-Lötverbindung. Die Röhre ist dadurch in ihren Abmessungen weitgehend festgelegt und abgedichtet.The housing parts are connected after a system bake-out temperature treatment that is up to over 400 ° C. The tube housing, which is not yet connected in a vacuum-tight manner, is already in the vacuum chamber. The microchannel plate and the input and output windows are already connected to the individual metal housing parts. The annular flange-like metal housing parts 7 and 8 preferably consist of an iron-nickel-cobalt compound. A thin gold or copper ring 4 is inserted between the surfaces of the flanges 7, 8. Correspondingly shaped press rams 3 and counter bearings 2 are also located in the vacuum chamber, which serve to exert greater pressure on the two flange parts 7 and 8. The two flange parts are pressed firmly together by this pressure. The interposed ductile metal parts 4 made of gold or copper deform in the process and result in a type of cold-soldered connection. The dimensions of the tube are largely fixed and sealed.

Gemäß der Erfindung wird nun weiterhin die auf einer Drehvorrichtung 5 aufgesetzte Röhre innerhalb der Vakuumkammer bei bestehendem Vakuum gedreht. Ein außer­halb der Vakuumkammer befindlicher Laser 1 erzeugt einen Laserstrahl 15, der umgelenkt wird und mittels einer Sammeloptik 16 auf die Nahtstelle des kalt ver­preßten Flansches 7, 8 fokussiert. Dadurch wird das Material der beiden Flanschteile 7 und 8 am Umfang miteinander verschweißt. Zu diesem Zweck wird die Intensität des Laserstrahles und der Drehgeschwindig­keit des Drehtellers 5 entsprechend aufeinander abge­stimmt.According to the invention, the tube placed on a rotating device 5 is now further rotated within the vacuum chamber in the presence of a vacuum. A laser 1 located outside the vacuum chamber generates a laser beam 15 which is deflected and focused on the seam of the cold-pressed flange 7, 8 by means of collecting optics 16. As a result, the material of the two flange parts 7 and 8 is welded together on the circumference. For this purpose, the intensity of the laser beam and the speed of rotation of the turntable 5 are matched accordingly.

Der Querschnitt des Laserstrahles 15 ist in der Ebene der vakuumdicht in die Wandung der Vakuumkammer einge­setzten Fensters 6 so gewählt, daß die thermische Flächenbelastung noch zu keiner Schädigung des Flan­sches 6 führen kann Z. b. bei einer Laserstrahl-Brenn­weite von z. B. 150 bis 200 mm Brennweite wird durch das an dem Fenster 6 vorhandene Strahlenbündel eine Aufwärmung dieser Scheibe noch nicht nennenswert statt­finden. Bei der Verschweißung des Umfangs der Flansch­teile 7 und 8 mittels des Laserstrahles kann es zu einer Metallabdampfung kommen. Diese Metallabdampfung kann aber infolge der bereits stattgefundenen Kaltver­preßung nicht in das innere der Wafer-Bildverstärker­röhre gelangen. Um jedoch die Innenseite der vakuum­dicht in die Vakuumkammer eingesetzten Scheibe 6 vor Metallabdampfungen zu schützen, ist es zweckmäßig, auf der Innenseite dieses Fensters 6 eine zusätzliche und auswechselbare Schutzscheibe anzubringen.The cross section of the laser beam 15 is selected in the plane of the window 6 inserted in a vacuum-tight manner in the wall of the vacuum chamber so that the thermal surface loading cannot lead to any damage to the flange 6. at a laser beam focal length of e.g. B. 150 to 200 mm focal length due to the existing beam at the window 6 a warming up of this disc is not yet taking place. When the circumference of the flange parts 7 and 8 is welded by means of the laser beam, metal evaporation can occur. However, this metal evaporation cannot get into the interior of the wafer image intensifier tube due to the cold pressing that has already taken place. However, in order to protect the inside of the pane 6 inserted into the vacuum chamber in a vacuum-tight manner from metal evaporation, it is expedient to mount an additional and replaceable protective pane on the inside of this window 6.

Claims (9)

1. Verfahren zum vakuumdichten Verbinden zweier me­tallenen Gehäuseteile einer Elektronenröhre bei dem die Gehäuseteile in einer Vakuumkammer ausgeheizt und durch zwischengefügtes Verbindungsmetall und Druckanwendung miteinander verbunden werden, dadurch gekennzeichnet, daß die Verbindungsnaht nach erfolgter Druckverbindung in der Vakuumkammer zusätzlich mittels eines Laser­strahles verschweißt wird.1. A method for vacuum-tight connection of two metal housing parts of an electron tube in which the housing parts are heated in a vacuum chamber and connected to one another by interposed connecting metal and pressure application, characterized in that the connection seam is additionally welded in the vacuum chamber by means of a laser beam after the pressure connection has been made. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß das zwischengefügte Verbindungsmetall duktiler ist als das Metall der Gehäuseteile und nach Durchführung der Druckverbindung so dünn ist, daß bei der Laser­schweißung die Metallkanten der Gehäuseteile miteinan­der verbunden werden.2. The method according to claim 1, characterized in that the intermediate connecting metal is more ductile than the metal of the housing parts and after performing the pressure connection is so thin that the metal edges of the housing parts are connected to one another during laser welding. 3. Verfahren nach Anspruch 1 oder Anspruch 2, dadurch gekennzeichnet, daß als Verbindungsmetall ein duktiles Metall, wie Gold, Kupfer oder dergleichen verwendet wird.3. The method according to claim 1 or claim 2, characterized in that a ductile metal such as gold, copper or the like is used as the connecting metal. 4. Verfahren nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß als Verbindungsmetall ein Metall mit Loteigenschaften bezüglich der Gehäuseteile ver­wendet wird.4. The method according to any one of claims 1 to 3, characterized in that a metal with solder properties with respect to the housing parts is used as the connecting metal. 5. Verfahren nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß als Metall für die Gehäuseteile eine Eisenverbindung, insbesondere eine Chrom, Nickel und/oder Kobalt enthaltende Eisenverbindung verwendet wird.5. The method according to any one of claims 1 to 4, characterized in that an iron compound, in particular a chromium, nickel and / or cobalt-containing iron compound is used as the metal for the housing parts. 6. Verfahren nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Gehäuseteile nach Art einer Flanschverbindung miteinander verbunden werden und die Laserverschweißung am Umfang der Flanschkanten vorge- nommen wird.6. The method according to any one of claims 1 to 5, characterized in that the housing parts are connected to one another in the manner of a flange connection and the laser welding is carried out on the circumference of the flange edges. 7. Verfahren nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die durch Druck verbundenen Gehäu­seteile innerhalb der Vakuumkammer gedreht werden und der außerhalb der Vakuumkammer erzeugte Laserstrahl durch ein vakuumdichtes Fenster in der Wand der Vakuum­kammer auf die Schweißstelle fokussiert gerichtet wird.7. The method according to any one of claims 1 to 6, characterized in that the housing parts connected by pressure are rotated within the vacuum chamber and the laser beam generated outside the vacuum chamber is focused through a vacuum-tight window in the wall of the vacuum chamber focused on the weld. 8. Verfahren nach Anspruch 7, dadurch gekennzeichnet, daß der Laserstrahl derart fokussiert wird, daß er in der Durchtrittsebene durch das Fenster einen so großen Durchmesser besitzt, daß eine Schädigung des Fensters vermieden wird.8. The method according to claim 7, characterized in that the laser beam is focused such that it has such a large diameter in the passage plane through the window that damage to the window is avoided. 9. Verfahren nach einem der Ansprüche 1 bis 8, gekenn­zeichnet durch die Verwendung zur Herstellung einer Bildverstärkerröhre mit Photokathode, insbesondere einer Wafer-Bildverstärkerröhre.9. The method according to any one of claims 1 to 8, characterized by the use for producing an image intensifier tube with a photocathode, in particular a wafer image intensifier tube.
EP87108254A 1986-06-19 1987-06-06 Method for hermetically joining two metallic vessel parts together Expired - Lifetime EP0250940B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19863620585 DE3620585A1 (en) 1986-06-19 1986-06-19 PROCESS FOR VACUUM-SEALING CONNECTING TWO METAL HOUSING PARTS
DE3620585 1986-06-19

Publications (2)

Publication Number Publication Date
EP0250940A1 true EP0250940A1 (en) 1988-01-07
EP0250940B1 EP0250940B1 (en) 1990-03-28

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EP87108254A Expired - Lifetime EP0250940B1 (en) 1986-06-19 1987-06-06 Method for hermetically joining two metallic vessel parts together

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DE (2) DE3620585A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112292915A (en) * 2018-06-29 2021-01-29 罗伯特·博世有限公司 Method for manufacturing housing for electronic device
CN114346436A (en) * 2022-01-17 2022-04-15 浙江精匠智能科技有限公司 Vacuum cup vacuumizing equipment and using method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422456A (en) * 1993-08-31 1995-06-06 Dahm; Jonathan S. Orbital head laser welder
DE19806321A1 (en) * 1998-02-06 1999-08-19 Samsung Display Devices Co Ltd Method and apparatus for joining fixing elements on the mask frame of color TV tubes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427088A (en) * 1965-02-23 1969-02-11 Philips Corp Device for manufacturing electron tubes
FR2482366A1 (en) * 1980-05-06 1981-11-13 Tokyo Shibaura Electric Co VACUUM ENVELOPE FOR A MULTIPLIER OF RADIATION IMAGES, AND METHOD OF MANUFACTURING SAME

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427088A (en) * 1965-02-23 1969-02-11 Philips Corp Device for manufacturing electron tubes
FR2482366A1 (en) * 1980-05-06 1981-11-13 Tokyo Shibaura Electric Co VACUUM ENVELOPE FOR A MULTIPLIER OF RADIATION IMAGES, AND METHOD OF MANUFACTURING SAME

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, Band 4, Nr. 52 (E-7)[534], 18. April 1980; & JP-A-55 24 327 (TOKYO SHIBAURA DENKI K.K.) 21-02-1980 *
PATENT ABSTRACTS OF JAPAN, Band 7, Nr. 24 (E-208)[1392], 2. November 1983; & JP-A-58 135 554 (TOKYO SHIBAURA DENKI K.K.) 12-08-1983 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112292915A (en) * 2018-06-29 2021-01-29 罗伯特·博世有限公司 Method for manufacturing housing for electronic device
CN114346436A (en) * 2022-01-17 2022-04-15 浙江精匠智能科技有限公司 Vacuum cup vacuumizing equipment and using method thereof
CN114346436B (en) * 2022-01-17 2022-10-04 浙江精匠智能科技有限公司 Vacuum cup vacuumizing equipment and using method thereof

Also Published As

Publication number Publication date
DE3762076D1 (en) 1990-05-03
DE3620585A1 (en) 1987-12-23
EP0250940B1 (en) 1990-03-28

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