EP0238123B1

EP0238123B1 - A device and method for doubling the frequency of electromagnetic radiation of a given frequency

Info

Publication number: EP0238123B1
Application number: EP19870200344
Authority: EP
Inventors: Peter James Dobson
Original assignee: Philips Electronics UK Ltd; Philips Gloeilampenfabrieken NV; Koninklijke Philips Electronics NV
Current assignee: Koninklijke Philips NV
Priority date: 1986-03-07
Filing date: 1987-02-26
Publication date: 1991-12-27
Also published as: DE3775439D1; US4867510A; GB2187566A; EP0238123A1; CA1272304A; JPS62252983A; GB8605659D0

Description

The invention relates to a device and method for doubling the frequency of electromagnetic radiation of a given frequency.
It is well known that non-linear optical effects can be produced in crystals (for example LiNbO₃, α-Quartz, Tourmaline) for which the second order non-linear dielectric susceptibility is not zero, that is birefringent crystals which do not have a centre of inversion symmetry. Such crystals exhibit, under certain conditions, phenomena such as sum and difference frequency generation, second harmonic generation (frequency doubling) and parametric amplification and oscillation of electromagnetic radiation input to the crystal. In order to obtain frequency doubling or second harmonic generation using such non-linear crystals, it is necessary to ensure phase-matching between the input electromagnetic radiation and the frequency doubled electromagnetic radiation. Thus the refractive indices at the input frequency and the doubled frequency in the crystal must be equal. Accordingly to ensure phase-matching, a direction at an angle to the axis or axes of symmetry of the birefringent crystal must be selected at which the refractive index at the input frequency for the ordinary ray is equal to the refractive index at double the input frequency for the extraordinary ray so that when electromagnetic radiation at the desired input frequency is input to the crystal at that selected angle to the axis or axes of symmetry, an extraordinary ray at twice the input frequency is generated along the same direction as the input ordinary ray. Accordingly, it will be seen that precise orientation of the non linear crystal is needed to obtain the required phase-matching. Moreover, the frequency doubling process using such non-linear crystals is not particularly efficient and a powerful laser input is normally required to obtain good results.
GB-A-1409475 describes a device for doubling the frequency of electromagnetic radiation of a given frequency which device comprises a first layer provided on a substrate and a second layer provided on the first layer with one of the first and second layers forming a waveguide for electromagnetic radiation of twice the given frequency. In particular, GB-A-1409475 describes a travelling wave frequency converter which consists of an optical waveguide with one face interfacing with air and the other face forming an interface having harmonic generation properties with a further layer and a means for coupling electromagnetic radiation into and out of the waveguide. The waveguide may be formed of a high refractive index glass whilst the further layer may be a metallic layer, in the example described an aluminium layer, although other materials could be used. The harmonic generation, preponderantly electromagnetic radiation of twice the given frequency, is caused by successive reflections of the incoming fundamental radiation of frequency w at the interface between the waveguide and the further layer. Accordingly, the device described in GB-A-1409475 requires that the incoming fundamental radiation be coupled into the waveguide to enable metallic reflection at the harmonic generation interface and to enable total internal reflection at the interface between the waveguide and air. To enable such reflections of the incoming fundamental radiation, the coupling means may comprise a prism which enables input of electromagnetic radiation to the waveguide via an evanescent wave or a diffraction grating arrangement.
According to a first aspect of the present invention, there is provided a device for doubling the frequency of electromagnetic radiation of a given frequency, the device comprising a first layer provided on a substrate and a second layer provided on the first layer with one of the first and second layers forming a waveguide for electromagnetic radiation of twice the given frequency, characterised in that the other of the first and second layers is formed of a material having a plasma oscillation frequency causing an electric field at twice the given frequency to be produced across the device in response to electromagnetic radiation of the given frequency incident on the device and normal to the major surfaces of the first and second layers taken as a whole, and in that the said electromagnetic radiation of twice the given frequency is generated in the said other layer in response to the said electric field.
Thus, in a device in accordance with the present invention, the operating frequency, that is the frequency of incoming electromagnetic radiation which can be doubled depends on the characteristics of the said other layer, in particular on the plasma oscillation frequency of the said other layer and does not rely on either the use of non linear crystals or successive reflections at a harmonic generation interface.
At least one major surface of the said one layer may be provided with a periodic structure having a period Λ = λ_i/4N_B, where λ_i is the wavelength of electromagnetic radiation of the given frequency and N_B is the refractive index of the said one layer at a wavelength of λ_i/2, to ensure coupling out of electromagnetic radiation at twice the given frequency.
The periodic structure may comprise corrugations or undulations formed in a major surface of the said one layer, for example sinusoidal corrugations or undulations. Alternatively, the periodic structure may comprise a periodic metallic structure overlaid on a major free surface of the said one layer or a photo-excitable carrier provided on a major free surface of the said one layer, a desired periodic grating being provided in the carrier by interfering electromagnetic radiation beams incident on the carrier.
A further layer formed of the same material as the said other layer may be provided so that the said one layer is sandwiched between the said other and the said further layers. Where the second layer is the said one layer, the interface between the second and further layers and a major free surface of the further layer may both have a periodic structure so that the further layer is of substantially uniform thickness.
The said other layer may be formed of doped indium tin oxide or of sodium tungstate and the said other and the further layers may be approximately 100nm (nanometres) thick while the said ore layer may be formed of alumina or silica and may be approximately 123nm thick.
The present invention also provides a method of obtaining electromagnetic radiation at twice a given frequency, using a device in accordance with the first aspect of the invention, which method comprises causing electromagnetic radiation of the given frequency to be incident on and normal to the major surfaces of the said first and second layers taken as a whole.
In order that the invention may be more readily understood, an embodiment thereof will now be described, by way of example, with reference to the accompanying drawings, in which:-

Figure 1 shows a diagram to illustrate the manner in which a device embodying the invention operates, and
Figure 2 illustrates schematically, and not to scale, a device embodying the invention.

Referring now to the drawings, Figure 2 illustrates diagrammatically a device embodying the invention for doubling the frequency of electromagnetic radiation input thereto.
As shown in Figure 2, the device comprises a substrate 1 having a flat major surface 1a on which are formed successive first and second layers 2 and 3. In the arrangement shown in Figure 2 the first layer 2 is formed of a first active material having a plasma oscillation frequency equal or nearly equal to a given frequency desired to be doubled. The various plasmon modes are discussed in a paper by E.N. Economou published in Physical Review 182 page 539 1969. The second layer 3 is formed of a second material having a low absorption for electromagnetic radiation of twice the given frequency, the second layer having a mean thickness d ≧ λ_i/4N_B (where λ_i is the wavelength of electromagnetic radiation at the given frequency and N_B is the refractive index of the second layer at the wavelength $\frac{λi}{2}$
) so as to form a waveguide for frequency doubled electromagnetic radiation. A further first layer 2' may be formed on the second layer 3 as shown in Figure 2.
As shown in Figure 2, a major surface 5 of the second layer 3 may be formed, possibly by etching, with a periodic structure 6 in the form of sinusoidal corrugations or undulations having a period

(where λ_i is the wavelength of the incident electromagnetic radiation and N_B is the refractive index of the waveguide second layer 3 at a wavelength of $\frac{λi}{2}$
). The further first layer 2' may be similarly corrugated as shown in Figure 2. The depth of the corrugations should be small, approximately $\frac{λ}{10}$
, to avoid scattering losses.
The periodic structure 6 shown in Figure 2 is provided to provide optical feedback to give a directional output 8' and improve the efficiency and coupling of the frequency doubled (2 ) electromagnetic radiation.
In a particular example, the first layers 2 and 2' may be of mean thickness 100nm (nanometres) to provide for optimum absorption of the incident electromagnetic radiation while the second layer may be of mean thickness 123nm. The first layers 2 and 2' may be formed of indium tin oxide doped to produce a carrier concentration of approximately 3x10²¹ cm⁻³, or alternatively sodium tungstate may be used. An advantage of using indium tin oxide is that the plasma frequency of the first layers 2 and 2' may then be altered or modified within a range from the infra-red to the visible wavelengths by varying the tin concentration of the first layers. Another possible material for the first layers 2 and 2' is lead ruthenium oxide which also has a modifiable plasma frequency. The second waveguide layer 3 may be formed of, for example, alumina or silica.
The first and second layers 2, 2' and 3 may be formed on the substrate 1 using any suitable conventional layer forming process used in the semiconductor field, for example molecular beam epitaxy.
Of course, although in the arrangement shown in Figure 2, only three layers are formed on the substrate 1, the number of layers could be increased to provide any desired number of alternate first and second layers.
Although in the arrangement shown in Figure 2, the first layer 2 is the active layer formed of the first material and the second layer 3 is the waveguide layer formed of the second material, the arrangement of the layers on the substrate could be reversed when the substrate is formed of an appropriate material to enable waveguide operation of the waveguide layer. In such an arrangement the further first layer 2' would not be provided.
As an alternative to the corrugated or undulating periodic structure, where the further first layer 2' is not provided, the free upper major surface 5 of the second layer 3 may be planar and may have a periodic structure formed by, for example, a periodic metallic structure overlaid on the surface 5 or by the provision on the surface 5 of a photo-excitable carrier in which a desired periodic grating is produced by interfering electromagnetic radiation beams incident on the carrier.
The operation of the device shown in Figure 2 will now be explained with reference to Figure 1, in which the device shown in Figure 2 is represented schematically by a right parallelopiped slab 7.
Thus, as shown in Figure 1, polarised electromagnetic radiation 8 at the given frequency w (for example light from a dye laser at approximately 740nm where the first layers are formed of indium tin oxide and the second layer(s) of silica or alumina) is incident normally on the free surface 5 of the uppermost first layer 2'. The electric field vector Ex is, as shown, along the x-direction (parallel to the direction of corrugation in Figure 2) and the corresponding magnetic field vector H_Z is shown to be along the z-direction (parallel to the corrugations in Figure 2).
When the electromagnetic radiation 8 incident normally on the surface 5 has a frequency w equal to the plasma frequency for the first layers 2 and 2', the electrons in the first layers tend to vibrate in unison with the incident electric field vector Ex. The microscopic movement of the electrons in the first layers will, under the influence of the magnetic field produced by the incident electromagnetic radiation, produce an electric field Ey across the device as shown in Figure 1 because of the Hall effect. The thus-produced electric field Ey is proportional to - J_xB_z where J_x is the induced current resulting from the electrons in the first layers oscillating in unison with the incident electric field vector E_x, and B_z is the magnetic flux density.
Now $J_{x} {= σ E}_{x}$

${= σ E}_{o} sin wt$

where σ is the (optical) conductivity and w is the angular frequency of the incident electromagnetic radiation

where λ_i is the wavelength of the incident electromagnetic radiation and c is the velocity of light in vacuo,
and $B_{z} {= µµ}_{o} H_{z}$

${= µµ}_{o} H_{o} sin wt$

where µµ_o is the permeability of free space and µ is the relative permeability of first layers.
By the Hall Effect $E_{y} {=E}_{x} {.B}_{z}$

thus: $E_{y} {= -σ E}_{o} H_{o} {µµ}_{o} sin² wt$

i.e.
Thus an electric field E_y at twice the given frequency is generated across the device by electromagnetic radiation at the given frequency w being incident on the first layer 2'. The electric field E_y is converted to electromagetic radiation (at a wavelength of approximately 370nm if the incident wavelength is approximately 740nm) in the waveguide layer 2, the periodic structure 6, if provided, serving to provide optical feedback to provide a directional output.
As will be appreciated, the device described above enables frequency doubling of electromagnetic radiation without the need for non-linear crystals and, because the device depends on the frequencies at which the incident radiation can couple to electrons in the first layers to excite plasma oscillations, in principle a wide range of wavelengths from 82.6nm (plasma energy ∿ 15eV) to 247µm (plasma energy ∿ 5meV) can be encompassed, the wavelength of operation of a particular device being of course determined by the composition of the first layer(s).
Such a device has wide applications for example for converting infra-red electromagnetic radiation used for lasers in telecommunciations (1.3 to 1.5µm wavelength) to visible electromagentic radiation (0.65 to 0.75µm wavelength), for shifting the wavelength of long wavelength lasers to shorter and more easily detectable wavelengths and for producing new short wavelength sources for existing excimer lasers which have wavelengths in the 1200Å and 800Å range. Such a device may also be used in, for example, infrared imaging equipment to enable a visible image of the infrared image detected by the equipment to be produced.

Claims

A device for doubling the frequency of electromagnetic radiation of a given frequency, the device comprising a first layer provided on a substrate and a second layer provided on the first layer with one of the first and second layers forming a waveguide for electromagnetic radiation of twice the given frequency, characterised in that the other of the first and second layers is formed of a material having a plasma oscillation frequency causing an electric field at twice the given frequency to be produced across the device in response to electromagnetic radiation of the given frequency incident on the device and normal to the major surfaces of the first and second layers taken as a whole, and in that the said electromagnetic radiation of twice the given frequency is generated in the said other layer in response to the said electric field.
A device according to Claim 1, characterised in that at least one major surface of the said one layer is provided with a periodic structure having a period Λ = λ_i/4N_B, where λ_i is the wavelength of electromagnetic radiation of the given frequency and N_B is the refractive index of the said one layer at a wavelength of λ _i/2.
A device according to Claim 2, characterised in that the periodic structure comprises corrugations or undulations formed in a major surface of the said one layer.
A device according to Claim 3, characterised in that the periodic structure comprises sinusoidal corrugations or undulations.
A device according to any one of the preceding claims, characterised in that a further layer formed of the same material as the said other layer is provided so that the said one layer is sandwiched between the said other and the said further layers.
A device according to Claim 3 or 4, characterised in that the second layer is the said one layer and a further layer of substantially uniform thickness is provided on the second layer, the further layer being formed of the same material as the first layer and an interface between the second and further layers being provided with the periodic structure.
A device according to Claim 2, characterised in that the said one layer is the second layer and the periodic structure comprises a periodic metallic structure overlaid on a major free surface of the second layer.
A device according to Claim 2, characterised in that the said one layer is the second layer and the periodic structure comprises a photo-excitable carrier provided on a major free surface of the second layer, a desired periodic grating being provided in the carrier by interfering electromagnetic radiation beams incident on the carrier.
A device according to any one of the preceding claims, characterised in that the said other layer is formed of doped indium tin oxide or of sodium tungstate.
A device according to any one of the preceding claims, characterised in that the said other layer and/or the further layer is (are) approximately 100nm (nanometres) thick.
A device according to any one of the preceding claims, characterised in that the said one layer is formed of alumina or silica.
A device according to any one of the preceding claims, characterised in that the said one layer has a mean thickness of approximately 123nm.
A method of obtaining electromagnetic radiation at twice a given frequency, using a device in accordance with any one of the preceeding claims, which method comprises causing electromagnetic radiation of the given frequency to be incident on and normal to the major surfaces of the said first and second layers taken as a whole.