EP0231473B1 - Arrangement for coupling waves from a waveguide to a semiconductor component - Google Patents

Arrangement for coupling waves from a waveguide to a semiconductor component Download PDF

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Publication number
EP0231473B1
EP0231473B1 EP86116758A EP86116758A EP0231473B1 EP 0231473 B1 EP0231473 B1 EP 0231473B1 EP 86116758 A EP86116758 A EP 86116758A EP 86116758 A EP86116758 A EP 86116758A EP 0231473 B1 EP0231473 B1 EP 0231473B1
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EP
European Patent Office
Prior art keywords
waveguide
coupling
waveguides
semiconductor element
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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EP86116758A
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German (de)
French (fr)
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EP0231473A2 (en
EP0231473A3 (en
Inventor
Michael Dipl.-Ing. Alberty
Walter Dipl.-Ing. Gross
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bosch Telecom GmbH
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ANT Nachrichtentechnik GmbH
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Application filed by ANT Nachrichtentechnik GmbH filed Critical ANT Nachrichtentechnik GmbH
Publication of EP0231473A2 publication Critical patent/EP0231473A2/en
Publication of EP0231473A3 publication Critical patent/EP0231473A3/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
    • H01P5/103—Hollow-waveguide/coaxial-line transitions

Definitions

  • the present invention relates to an arrangement for coupling waveguide waves to a semiconductor component, the semiconductor component being inserted into a coupling opening in a partition between two waveguides, both of which are short-circuited at one end and run parallel to one another at least over a partial length, and one in each waveguide coupling probe contacted with the semiconductor component protrudes.
  • US-A-2 433 074 and DE-B-1 028 639 disclose that a coupling probe projects into or out of a waveguide for coupling in or out radio-frequency energy.
  • the waveguide is short-circuited and the coupling probes are arranged at a suitable distance in front of the short-circuit wall.
  • the invention is based on the object of specifying an arrangement of the type mentioned in the introduction, which has the smallest possible overall length.
  • the input waveguide 1 shows a longitudinal section through a microwave circuit, for example an amplifier, oscillator, mixer or the like, with a waveguide input and a waveguide output.
  • the input waveguide 1 is coupled to the output waveguide 2 via a coupling opening 4 let into the common side wall 3.
  • the coupling opening 4 is at a distance of approximately ⁇ / 16- ⁇ / 4 both from the short-circuit plane 5 of the input waveguide 1 and from the short-circuit plane 6 of the output waveguide 2.
  • the active semiconductor component 7 (e.g. diode, FET) of the microwave circuit is inserted into the coupling opening 4 between the two waveguides 1 and 2 and is in ground contact with the waveguide wall 3.
  • a first connection arm 8 of the semiconductor component 7 projects into the input waveguide 1 and couples the wave of the input signal there.
  • a second connection arm 9 of the semiconductor component protrudes into the output waveguide 2 and couples to it the waves of the semiconductor component e.g. amplified or frequency multiplied signal.
  • the connecting arms 8 and 9 of the semiconductor component 7 serving as coupling probes are approximately 0.3-0.8 times the narrow side of the waveguide (i.e. approximately 0.15-0.35 cm at an operating frequency of 20 GHz). Because only very short coupling probes are required here, the thin and not very stable connecting arms can freely project into the waveguide 1, 2 without having to support them.
  • the connecting arms 8 and 9 of the semiconductor component 7 are supplied with direct voltages by coaxial bushings 10 and 11 in the walls of the waveguides 1 and 2.
  • the direct voltage is fed to the connection arm of the semiconductor component via a thin wire 12 which runs through the waveguide perpendicular to the E field. This type of direct voltage supply ensures that the Waveguide field is disturbed as little as possible and the damping of the coupling is relatively low.
  • the coupling between the waveguides and the semiconductor component can be adjusted in a simple manner by means of tuning screws 13, 14 and 15, 16, which project through the waveguide walls opposite the coupling opening 4 in the vicinity of the coupling probes 8 and 9 into the waveguides 1 and 2 .
  • FIGS. 3 and 4 The arrangement shown in FIGS. 3 and 4 is identical to the arrangement described above according to FIGS. 1 and 2 except for the mounting of the semiconductor component and the design of the coupling probes. 3 and 4, the same reference numerals are used as in FIGS. 1 and 2.
  • a semiconductor component 7 which is not housed in a housing is placed on a dielectric carrier plate 17.
  • the carrier plate 17 On one side, the carrier plate 17 is provided with two conductor tracks 18 and 19 which are approximately 0.3-0.8 times the waveguide narrow side and run in opposite directions, with which two connection contacts of the semiconductor component 7 are connected by means of bonding wires.
  • the carrier plate 17 has two further conductive surfaces 20 with which the semiconductor component is ground-contacted.
  • This dielectric carrier plate 17, which is occupied by the semiconductor component 7, is installed in the coupling opening 4 in such a way that its conductive surfaces 20 are contacted with the waveguide wall 3 and its conductor tracks 18 and 19 protrude into the waveguides 1 and 2 as coupling probes.

Description

Die vorliegende Erfindung betrifft eine Anordnung zum Ankoppeln von Hohlleiterwellen an ein Halbleiterbauelement, wobei das Halbleiterbauelement in eine Koppelöffnung in einer Trennwand zwischen zwei Hohlleitern eingesetzt ist, die beide an einem Ende kurzgeschlossen sind und mindestens über eine Teillänge parallel nebeneinander verlaufen, und in jeden Hohlleiter eine mit dem Halbleiterbauelement kontaktierte Koppelsonde hineinragt.The present invention relates to an arrangement for coupling waveguide waves to a semiconductor component, the semiconductor component being inserted into a coupling opening in a partition between two waveguides, both of which are short-circuited at one end and run parallel to one another at least over a partial length, and one in each waveguide coupling probe contacted with the semiconductor component protrudes.

In einer Veröffentlichung von I. Angelov, A. Spasov, I. Stoev, L Urshev"Investigation of some guiding structures for low-noise FET amplifiers", European Microwave Conference 1985, S. 535-540 ist ein Hochfrequenzverstärker beschrieben, dessen Verstärkerbauelement ein Feldeffekttransistor (FET) ist. Der FET ist einerseits an einen Eingangshohlleiter und andererseits an einen Ausgangshohlleiter angekoppelt, die beide hintereinander längs einer gemeinsamen Achse angeordnet sind. Diese bekannte Anordnung hat eine große Baulänge, insbesondere bei einem mehrstufigen Verstärker.In a publication by I. Angelov, A. Spasov, I. Stoev, L Urshev "Investigation of some guiding structures for low-noise FET amplifiers", European Microwave Conference 1985, pp. 535-540, a high-frequency amplifier is described, the amplifier component of which is a Field effect transistor (FET) is. The FET is coupled on the one hand to an input waveguide and on the other hand to an output waveguide, both of which are arranged one behind the other along a common axis. This known arrangement has a large overall length, particularly in the case of a multi-stage amplifier.

Demgegenüber bringt die eingangs dargelegte und aus der US - A - 3 239 744 bekannte Anordnung durch die Parallelführung der Hohlleiter eine Verkürzung der Baulänge mit sich. Das an die beiden Hohlleiter angekoppelte Halbleitorbauelement wird gemäß der US - A 3 239 744 in der Koppelöffnung ist einem Teflonzylinder gehalten. Diese Art der Halterung ist speziell für einen hier verwendeten Rohr-Typ Varactor geeignet.In contrast, the arrangement described at the outset and known from US Pat. No. 3,239,744 results in a shortening of the overall length due to the parallel guidance of the waveguides. That coupled to the two waveguides According to US Pat. No. 3,239,744, the semi-conductor component is held in the coupling opening by a Teflon cylinder. This type of bracket is especially suitable for a Varactor tube type used here.

Die US - A - 2 433 074 und die DE - B - 1 028 639 offenbaren, daß zur Ein - oder Auskopplung von Hochfrequenzenergie in einen Hohlleiter eine Koppelsonde hineinragt. Dabei ist der Hohlleiter kurzgeschlossen und die Koppelsonden in geeignetem Abstand vor der Kurzschlußwand angeordnet.US-A-2 433 074 and DE-B-1 028 639 disclose that a coupling probe projects into or out of a waveguide for coupling in or out radio-frequency energy. The waveguide is short-circuited and the coupling probes are arranged at a suitable distance in front of the short-circuit wall.

Der Erfindung liegt nun die Aufgabe zugrunde, eine Anordnung der einleitend gennanten Art anzugeben, die eine möglichst geringe Baulänge aufweist.The invention is based on the object of specifying an arrangement of the type mentioned in the introduction, which has the smallest possible overall length.

Erfindungsgemäß wird diese Aufgabe durch die Merkmale des Patentanspruchs 1 gelöst.According to the invention, this object is achieved by the features of patent claim 1.

Zweckmäßige Ausführungen der Erfindung gehen aus den Unteransprüchen hervor.Appropriate embodiments of the invention emerge from the subclaims.

An Hand eines in der Zeichnung dargestellten Ausführungsbeispiels wird nachfolgend die Erfindung näher erläutert. Es zeigen:

  • Figur 1 einen Längsschnitt durch zwei Hohlleiter mit einem darin angeordneten Halbleiterbauelement zur Erläuterung des Prinzips der Erfindung,
  • Figur 2 eine Sicht in einen Hohlleiter der in Figur 1 dargestellten Anordnung,
  • Figur 3 die gleiche Anordnung wie Figur 1, jedoch erfindungsgemäß mit einem auf einem dielektrischen Trägerplättchen aufgebrachten Halbleiterbauelement und
  • Figur 4 eine Sicht in einen Hohlleiter der in Figur 3 dargestellten Anordnung.
The invention is explained in more detail below on the basis of an exemplary embodiment shown in the drawing. Show it:
  • FIG. 1 shows a longitudinal section through two waveguides with a semiconductor component arranged therein to explain the principle of the invention,
  • FIG. 2 shows a view into a waveguide of the arrangement shown in FIG. 1,
  • 3 shows the same arrangement as FIG. 1, but according to the invention with a semiconductor component applied to a dielectric carrier plate and
  • Figure 4 is a view into a waveguide of the arrangement shown in Figure 3.

In der Figur 1 ist ein Längsschnitt durch eine Mikrowellenschaltung, z.B. Verstärker, Oszillator, Mischer o. dgl., mit einem Hohlleitereingang und einem Hohlleiterausgang dargestellt. Der am Ende kurzgeschlossene Eingangshohlleiter 1 und der ebenfalls am Ende kurzgeschlossene Ausgangshohlleiter 2 verlaufen über eine Länge von ca. λ/8- λ/2 (λ =̂ Hohlleiterwellenlänge) parallel nebeneinander und sind in dem Überschneidungsbereich durch eine den beiden Hohlleitern gemeinsame Seitenwand 3 (Hohlleiterbreitseite) voneinander getrennt. Der Eingangshohlleiter 1 ist mit dem Ausgangshohlleiter 2 über eine in die gemeinsame Seitenwand 3 eingelassene Koppelöffnung 4 gekoppelt. Dabei hat die Koppelöffnung 4 sowohl von der Kurzschlußebene 5 des Eingangshohlleiters 1 als auch von der Kurzschlußebene 6 des Ausgangshohlleiters 2 einen Abstand von ca. λ/16-λ/4.1 shows a longitudinal section through a microwave circuit, for example an amplifier, oscillator, mixer or the like, with a waveguide input and a waveguide output. The input waveguide 1, which is short-circuited at the end, and the output waveguide 2, which is likewise short-circuited at the end, run parallel to one another over a length of approximately λ / 8- λ / 2 (λ = ̂ waveguide wavelength) and are separated from one another in the overlap region by a side wall 3 (broad waveguide side) common to the two waveguides. The input waveguide 1 is coupled to the output waveguide 2 via a coupling opening 4 let into the common side wall 3. The coupling opening 4 is at a distance of approximately λ / 16-λ / 4 both from the short-circuit plane 5 of the input waveguide 1 and from the short-circuit plane 6 of the output waveguide 2.

In die Koppelöffnung 4 zwischen den beiden Hohlleitern 1 und 2 ist das aktive Halbleiterbauelement 7 (z.B. Diode, FET) der Mikrowellenschaltung eingesetzt und mit der Hohlleiterwand 3 massekontaktiert. Ein erster Anschlußarm 8 des Halbleiterbauelements 7 ragt in den Eingangshohlleiter 1 hinein und koppelt dort die Welle des Eingangssignals an. Ein zweiter Anschlußarm 9 des Halbleiterbauelements ragt in den Ausgangshohlleiter 2 hinein und koppelt an diesen die Wellen des vom Halbleiterbauelements z.B. verstärkten oder frequenzvervielfachten Signals an. Die als Koppelsonden dienenden Anschlußarme 8 und 9 des Halbleiterbauelements 7 sind etwa das 0,3-0,8-fache der Hohlleiterschmalseite (d.h. ca. 0,15-0,35 cm bei einer Betriebsfrequenz von 20 GHz) lang. Weil hier nur sehr kurze Koppelsonden erforderlich sind, können die an sich dünnen und nicht sehr stabilen Anschlußarme frei in die Hohlleiter 1, 2 hineinragen, ohne sie extra abstützen zu müssen.The active semiconductor component 7 (e.g. diode, FET) of the microwave circuit is inserted into the coupling opening 4 between the two waveguides 1 and 2 and is in ground contact with the waveguide wall 3. A first connection arm 8 of the semiconductor component 7 projects into the input waveguide 1 and couples the wave of the input signal there. A second connection arm 9 of the semiconductor component protrudes into the output waveguide 2 and couples to it the waves of the semiconductor component e.g. amplified or frequency multiplied signal. The connecting arms 8 and 9 of the semiconductor component 7 serving as coupling probes are approximately 0.3-0.8 times the narrow side of the waveguide (i.e. approximately 0.15-0.35 cm at an operating frequency of 20 GHz). Because only very short coupling probes are required here, the thin and not very stable connecting arms can freely project into the waveguide 1, 2 without having to support them.

Durch koaxiale Durchführungen 10 und 11 in den Wänden der Hohlleiter 1 und 2 werden die Anschlußarme 8 und 9 des Halbleiterbauelements 7 mit Gleichspannungen versorgt. Wie die Sicht in den Eingangshohlleiter 1 in Fig. 2 zeigt, wird die Gleichspannung über einen dünnen Draht 12, der durch den Hohlleiter senkrecht zum E-Feld verläuft, dem Anschlußarm des Halbleiterbauelements zugeführt. Diese Art der Gleichspannungszuführung gewährleistet, daß das Hohlleiterfeld möglichst wenig gestört wird und die Dämpfung der Ankopplung relativ gering ist.The connecting arms 8 and 9 of the semiconductor component 7 are supplied with direct voltages by coaxial bushings 10 and 11 in the walls of the waveguides 1 and 2. As the view into the input waveguide 1 in FIG. 2 shows, the direct voltage is fed to the connection arm of the semiconductor component via a thin wire 12 which runs through the waveguide perpendicular to the E field. This type of direct voltage supply ensures that the Waveguide field is disturbed as little as possible and the damping of the coupling is relatively low.

Ein Abgleich der Kopplung zwischen den Hohlleitern und dem Halbleiterbauelement läßt sich auf einfache Weise mittels Abstimmschrauben 13, 14 bzw. 15, 16 bewerkstelligen, welche durch die der Koppelöffnung 4 gegenüberliegenden Hohlleiterwände in der Umgebung der Koppelsonden 8 und 9 in die Hohlleiter 1 und 2 hineinragen.The coupling between the waveguides and the semiconductor component can be adjusted in a simple manner by means of tuning screws 13, 14 and 15, 16, which project through the waveguide walls opposite the coupling opening 4 in the vicinity of the coupling probes 8 and 9 into the waveguides 1 and 2 .

Die in den Fig. 3 und 4 gezeigte Anordnung ist mit der oben beschriebenen Anordnung gemäß den Fig. 1 und 2 bis auf die Halterung des Halbleiterbauelements und die Ausführung der Koppelsonden identisch. Deshalb finden sich in den Fig. 3 und 4 die gleichen Bezugszeichen wieder wie in den Fig. 1 und 2. Beim in den Fig. 3 und 4 dargestellten Ausführungsbeispiel ist ein nicht in einem Gehäuse untergebrachtes Halbleiterbauelement 7 auf einem dielektrischen Trägerplättchen 17 aufgesetzt. Auf einer Seite ist das Trägerplättchen 17 mit zwei etwa das 0,3-0,8-fache der Hohlleiterschmalseite langen, in entgegengesetzte Richtungen verlaufenden Leiterbahnen 18 und 19 versehen, mit denen zwei Anschlußkontakte des Halbleiterbauelements 7 über Bonddrähtchen verbunden sind. Das Trägerplättchen 17 weist zwei weitere leitende Flächen 20 auf, mit denen das Halbleiterbauelement massekontaktiert ist. Dieses mit dem Halbleiterbauelement 7 besetzte dielektrische Trägerplättchen 17 ist so in der Koppelöffnung 4 installiert, daß seine leitenden Flächen 20 mit der Hohlleiterwand 3 kontaktiert sind und seine Leiterbahnen 18 und 19 als Koppelsonden in die Hohlleiter 1 und 2 hineinragen.The arrangement shown in FIGS. 3 and 4 is identical to the arrangement described above according to FIGS. 1 and 2 except for the mounting of the semiconductor component and the design of the coupling probes. 3 and 4, the same reference numerals are used as in FIGS. 1 and 2. In the exemplary embodiment shown in FIGS. 3 and 4, a semiconductor component 7 which is not housed in a housing is placed on a dielectric carrier plate 17. On one side, the carrier plate 17 is provided with two conductor tracks 18 and 19 which are approximately 0.3-0.8 times the waveguide narrow side and run in opposite directions, with which two connection contacts of the semiconductor component 7 are connected by means of bonding wires. The carrier plate 17 has two further conductive surfaces 20 with which the semiconductor component is ground-contacted. This dielectric carrier plate 17, which is occupied by the semiconductor component 7, is installed in the coupling opening 4 in such a way that its conductive surfaces 20 are contacted with the waveguide wall 3 and its conductor tracks 18 and 19 protrude into the waveguides 1 and 2 as coupling probes.

Claims (5)

  1. An arrangement for coupling waveguide modes into a semiconductor element (7), with the semiconductor element (7) being inserted into a coupling aperture (4) disposed in a partition (3) between two waveguides (1, 2) which are both short-circuited at one end and are parallel to one another at least over a part of their length, with a coupling probe (18, 19) connected with the semiconductor element (7) projecting into each waveguide (1, 2), characterized in that the semiconductor element (7) is applied to a dielectric substrate (17); said substrate (17) is provided, on one side, with two conductor paths (18, 19) extending in opposite directions and connected with the contact terminals of the semiconductor element (7); the dielectric substrate (17) has at least one conductive area (20) with which the semiconductor element is in ground contact; and the substrate (17) is inserted into the coupling aperture (4), with its conductive area (20) being connected with the waveguide partition (3) and its conductor paths (18, 19) projecting as coupling probes into the two waveguides (1, 2).
  2. An arrangement according to claim 1, characterized in that the coupling aperture (4) is inserted into the common partition (3) of the two waveguides (1, 2) at a distance of λ/16 to λ/4 (λ =̂ waveguide wavelength) ahead of the short-circuit planes (5, 6) of the two waveguides (1, 2).
  3. An arrangement according to claim 1, characterized in that, on the dielectric substrate (17), the conductor paths (18, 19) serving as coupling probes have a length which is 0.3 to 0.8 times the length of the narrow side of the waveguide.
  4. An arrangement according to claim 3, characterized in that tuning pins (13, 14, 15, 16) project into the waveguides (1, 2) in the vicinity of the coupling probes (18, 19) through the side walls of the two semiconductors (1, 2) disposed opposite the coupling opening (4).
  5. An arrangement according to claim 1, characterized in that wires (12) supplying a direct voltage are connected with the coupling probes (18, 19) and extend perpendicularly to the E field in the waveguides (1, 2).
EP86116758A 1986-02-05 1986-12-02 Arrangement for coupling waves from a waveguide to a semiconductor component Expired - Lifetime EP0231473B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3603454 1986-02-05
DE19863603454 DE3603454A1 (en) 1986-02-05 1986-02-05 ARRANGEMENT FOR COUPLING SEMICONDUCTOR SHAFTS TO A SEMICONDUCTOR COMPONENT

Publications (3)

Publication Number Publication Date
EP0231473A2 EP0231473A2 (en) 1987-08-12
EP0231473A3 EP0231473A3 (en) 1988-09-14
EP0231473B1 true EP0231473B1 (en) 1992-06-17

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EP86116758A Expired - Lifetime EP0231473B1 (en) 1986-02-05 1986-12-02 Arrangement for coupling waves from a waveguide to a semiconductor component

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US (1) US4734667A (en)
EP (1) EP0231473B1 (en)
CA (1) CA1263457A (en)
DE (2) DE3603454A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182631A (en) * 1988-04-15 1993-01-26 Nippon Telegraph And Telephone Corporation Film carrier for RF IC
DE10010713B4 (en) 2000-03-04 2008-08-28 Endress + Hauser Gmbh + Co. Kg Level measuring device for transmitting and receiving broadband high-frequency signals

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2433074A (en) * 1943-07-02 1947-12-23 Raytheon Mfg Co High-frequency coupling device
DE1028639B (en) * 1956-10-11 1958-04-24 Siemens Ag Waveguide section short-circuited on one side, which is provided with a device for connecting a coaxial line
US3092711A (en) * 1958-09-08 1963-06-04 Bennett Manufacture of honeycomb core
US3017585A (en) * 1959-04-24 1962-01-16 Research Corp Microwave switch
US3239744A (en) * 1965-04-16 1966-03-08 Gen Electronic Lab Inc Frequency multiplier
US3379956A (en) * 1966-08-26 1968-04-23 Navy Usa Floating diode harmonic multiplier

Also Published As

Publication number Publication date
DE3603454A1 (en) 1987-08-06
EP0231473A2 (en) 1987-08-12
EP0231473A3 (en) 1988-09-14
CA1263457A (en) 1989-11-28
US4734667A (en) 1988-03-29
DE3685745D1 (en) 1992-07-23

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