EP0165309A4 - Diode electroluminescente a emission en surface a largeur de bande etendue et flux energetique specifique eleve et son procede de production. - Google Patents

Diode electroluminescente a emission en surface a largeur de bande etendue et flux energetique specifique eleve et son procede de production.

Info

Publication number
EP0165309A4
EP0165309A4 EP19850900420 EP85900420A EP0165309A4 EP 0165309 A4 EP0165309 A4 EP 0165309A4 EP 19850900420 EP19850900420 EP 19850900420 EP 85900420 A EP85900420 A EP 85900420A EP 0165309 A4 EP0165309 A4 EP 0165309A4
Authority
EP
European Patent Office
Prior art keywords
bandwidth
surface emitting
method therefor
emitting led
radiance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP19850900420
Other languages
German (de)
English (en)
Other versions
EP0165309A1 (fr
Inventor
James L Plaster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of EP0165309A1 publication Critical patent/EP0165309A1/fr
Publication of EP0165309A4 publication Critical patent/EP0165309A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
EP19850900420 1983-12-14 1984-12-13 Diode electroluminescente a emission en surface a largeur de bande etendue et flux energetique specifique eleve et son procede de production. Withdrawn EP0165309A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56150183A 1983-12-14 1983-12-14
US561501 1983-12-14

Publications (2)

Publication Number Publication Date
EP0165309A1 EP0165309A1 (fr) 1985-12-27
EP0165309A4 true EP0165309A4 (fr) 1986-11-06

Family

ID=24242239

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19850900420 Withdrawn EP0165309A4 (fr) 1983-12-14 1984-12-13 Diode electroluminescente a emission en surface a largeur de bande etendue et flux energetique specifique eleve et son procede de production.

Country Status (3)

Country Link
EP (1) EP0165309A4 (fr)
JP (1) JPS61500754A (fr)
WO (1) WO1985002722A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02174272A (ja) * 1988-12-17 1990-07-05 Samsung Electron Co Ltd 発光ダイオードアレイの製造方法
JP2002526932A (ja) * 1998-09-30 2002-08-20 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト 面発光ダイオードビーム源

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0047591A2 (fr) * 1980-09-10 1982-03-17 Northern Telecom Limited Diode à émission de lumière avec rendement quantique externe élevé

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5329508B2 (fr) * 1974-03-27 1978-08-21
US4149175A (en) * 1975-06-20 1979-04-10 Matsushita Electric Industrial Co., Ltd. Solidstate light-emitting device
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
US4249967A (en) * 1979-12-26 1981-02-10 International Telephone And Telegraph Corporation Method of manufacturing a light-emitting diode by liquid phase epitaxy
JPS56135985A (en) * 1980-03-28 1981-10-23 Fujitsu Ltd A xga1-xas light emitting diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0047591A2 (fr) * 1980-09-10 1982-03-17 Northern Telecom Limited Diode à émission de lumière avec rendement quantique externe élevé

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENTS ABSTRACTS OF JAPAN, vol. 6, no. 12 (E-91)[890], 23rd January 1982; & JP - A - 56 135 985 (FUJITSU K.K.) 23-10-1981 *
See also references of WO8502722A1 *

Also Published As

Publication number Publication date
JPS61500754A (ja) 1986-04-17
EP0165309A1 (fr) 1985-12-27
WO1985002722A1 (fr) 1985-06-20

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19850812

AK Designated contracting states

Designated state(s): AT BE CH DE FR GB LI LU NL SE

RBV Designated contracting states (corrected)

Designated state(s): DE FR GB SE

A4 Supplementary search report drawn up and despatched

Effective date: 19861106

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19880705

RIN1 Information on inventor provided before grant (corrected)

Inventor name: PLASTER, JAMES, L.