EP0163289A2 - Device for realising a transition between a microstrip line and a two-strip coplanar line - Google Patents

Device for realising a transition between a microstrip line and a two-strip coplanar line Download PDF

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Publication number
EP0163289A2
EP0163289A2 EP85106530A EP85106530A EP0163289A2 EP 0163289 A2 EP0163289 A2 EP 0163289A2 EP 85106530 A EP85106530 A EP 85106530A EP 85106530 A EP85106530 A EP 85106530A EP 0163289 A2 EP0163289 A2 EP 0163289A2
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Prior art keywords
line
band line
band
coplanar
microstrip line
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German (de)
French (fr)
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EP0163289A3 (en
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Franz Dr. Auracher
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Siemens AG
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Siemens AG
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/08Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices

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  • the present invention relates, according to the preamble of claim 1, to an arrangement for producing a transition between a microstrip line and a coplanar two-band line.
  • coplanar two-band lines are often used in addition to microstrip lines. Both types of line often have to be connected to one another or to coaxial lines using broadband transitions.
  • broadband transitions between rigid coaxial lines and coplanar two-band lines are known from the literature.
  • a transition from a rigid coaxial cable to, for example, a two-band line in thin-film circuits is technologically difficult due to the required connection of the rigid inner conductor of the coaxial cable to the thin electrode of the two-band line.
  • Transitions from coaxial connectors to microstrip lines on Al 2 0 3 carriers are commercially available.
  • the object of the present invention is to provide a simple arrangement for producing a broadband transition between a microstrip line and a coplanar two-band line.
  • Ed 1 sti / May 16, 1984 This object is achieved according to the characterizing part of patent claim 1 in that the microstrip line and the coplanar two-band line are guided transversely to one another and are arranged such that the ground electrode of the microstrip line and the ground electrode of the two-band line lie directly on top of one another, and that a strip-shaped other electrode of the microstrip line and the narrower strip-shaped electrode of the asymmetrical two-band line, which runs transversely thereto and is coplanar with the wider ground electrode of the two-band line, is connected to one another by one or more ribbons or wires made of electrically conductive material.
  • a preferred embodiment of the arrangement according to the invention is designed in such a way that the two ends of the narrower electrode of the asymmetrical two-band line are each connected to a strip-shaped electrode of the microstrip line running transversely thereto by one or more bands or wires of electrically conductive material arranged next to one another.
  • a further preferred embodiment of the arrangement according to the invention is designed such that the one or more strip-shaped electrodes of the microstrip line and their ground electrode on opposite sides of a thin substrate made of electrically insulating material, and the two coplanar electrodes of the two-band line on one side of a substrate are arranged from dielectric material.
  • the substrate of the microstrip line preferably consists of ceramic material and the substrate of the two-band line consists of electro-optical material.
  • An advantageous embodiment of the arrangement according to the invention which can be used as a faster integrated optical modulator, is designed according to claim 5 so that the distance between the coplanar electrodes of the two-band line narrows in the longitudinal direction thereof, the ratio between the width of the narrower electrode of the two-band line and the distance between the two coplanar electrodes along these electrodes is kept constant.
  • a larger distance, which is more favorable for the broadband transition, and a much smaller distance, which is more favorable for a high cut-off frequency of the modulator in the GHz range can be realized between the coplanar electrodes of the two-band line.
  • the arrangement according to the invention is advantageously used in accordance with claim 6 for producing a broadband transition between a coaxial line and a two-band line, a transition being produced between the coaxial line and the microstrip line.
  • This transition from the coaxial line, for example a coaxial cable, to the microstrip line can be done with commercially available components.
  • the two-band line ZL consists of the wide strip-shaped ground electrode 5 and the narrower strip-shaped electrode 6 coplanar with it on the top of the substrate 7.
  • the bottom of the substrate 7 can additionally be metallized and connected to ground.
  • the characteristic impedance Z 0 of the two-band line is determined by the parameters c / b, b / D and the dielectric constant ⁇ ⁇ of the material from which the substrate 7 is made.
  • b is the distance between the parallel strip-shaped electrodes 5 and 6 of the two-band line ZL
  • c the width of the narrower electrode 6 of the two-band line ZL
  • D is the thickness of the substrate 7.
  • the ratio c / b approximately 0.6 if D is unequal greater than b.
  • the microstrip line ML is applied, for example, to the substrate 1 made of A1 2 0 3 with a thickness t of approximately 0.6 mm.
  • the ground electrode 4 is formed by full-surface metallization of the underside of the ceramic substrate 1 and on the top the strip-shaped electrodes 2 and 3 are applied in the form of metal strips of width w, which run perpendicular to the narrower strip-shaped electrode 6 of the two-band line ZL.
  • the width w of the electrodes 2 and 3 for a 50 Ohm - line approximately -1.2 mm.
  • the broadband transition from the microstrip line ML to the two-band line ZL is achieved as follows: the underside of the Microstrip line ML, on which the ground electrode 4 is located, is brought into good electrical contact with the ground electrode 5 of the two-band line ZL on the surface of the substrate 7, for example by inserting a spring plate.
  • the "hot" strip-shaped electrodes 2 and 3 of the microstrip line ML are connected to the "hot" electrode 6 of the two-band line ZL, which is coplanar with the ground electrode 5, via conductive tapes or wires 21 and 31, for example by bonding.
  • the optimization of the broadband transition takes place through the correct choice of the dimensions a, b, c and d, of which a the distance of the end of the microstrip line ML on the wider ground electrode 5 of the two-band line ZL from the edge of the wider ground electrode opposite the coplanar narrower electrode 6 5, and d mean the width or the diameter of the ribbon or wire 21, 31.
  • a 0 to 0.5 mm, b approximately 0.25 mm and c./b approximately 0.6.
  • curve A shows the measured frequency response of the reflection factor S 11
  • the measured frequency response of the insertion loss S 21 for such an arrangement at the strip-shaped electrode 2 of the microstrip line ML
  • the stripe-shaped electrode 3 of the microstrip egg tion ML was completed with 50 ohms.
  • the width d of the bond tapes 21 and 31 was 100 ⁇ m in each case.
  • the frequency response should be much better when using wider ribbons or wires 21 and 31, for example with a width or a diameter d of 200 to 1000 .mu.m.
  • the exemplary embodiment described is typical for fast integrated optical modulators.
  • the distance b between the coplanar electrodes 5 and 6 of the two-band line ZL should only be 5 to 20 ⁇ m.
  • the transition from the distance b of 250 ⁇ m used in the exemplary embodiment to distances of 5 to 20 ⁇ m can then be made simply by, for example, tapering the distance between the coplanar electrodes 5 and 6 in the longitudinal direction of these electrodes, the ratio c / b along the electrodes 5 and 6 is kept constant.
  • modulators with a limit frequency of over 4 GHz and a length L of the hot electrode 6 of the two-band line ZL of 13 mm have already been tested.

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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

Es wird eine Anordnung zur Herstellung eines breitbandigen Übergangs zwischen einer Mikrostripleitung (ML) und einer koplanaren Zweibandleitung (ZL) beschrieben. Die Mikrostripleitung (ML) und die Zweibandleitung (ZL) sind quer zueinander geführt. Die Masseelektrode der Mikrostripleitung und die Masseelektrode (5) der Zweibandleitung liegen unmittelbar aufeinander. Zwei streifenförmige andere Elektroden (2, 3) der Mikrostripleitung (ML) und die dazu quer verlaufende und zur breiteren Masse-elektrode der Zweitbandleitung koplanare schmalere streifenförmige Elektrode (6) der asymmetrishen Zweibandleitung sind durch ein oder mehrere Bondbänachen oder-drätchen (21, 31) aus Metall breitbandig miteinander verbunden. Die Anordnung ist vorteilhaft als schneller integriert optischer Modulator mit Grenzfrequenzen im GHz-Bereich verwendbar, wobei sich zweckmäßigerweise der Abstand zwischen den koplanaren Elektroden (5, 6) in deren Längsrichtung konisch verengt. Außerdem ist die Anordnung vorteilhaft zum Verbinden einer Zweibandleitung mit dem steifen Innenleiter eines Koaxialkabels verwendbar.An arrangement for producing a broadband transition between a microstrip line (ML) and a coplanar two-band line (ZL) is described. The microstrip line (ML) and the two-band line (ZL) are guided transversely to each other. The ground electrode of the microstrip line and the ground electrode (5) of the two-band line lie directly on top of one another. Two strip-shaped other electrodes (2, 3) of the microstrip line (ML) and the narrower strip-shaped electrode (6) of the asymmetrical two-band line, which is transverse to it and coplanar with the wider ground electrode of the second-band line, are connected by one or more bonding tapes or small wires (21, 31 ) made of metal connected to each other in a broadband manner. The arrangement can advantageously be used as a rapidly integrated optical modulator with cutoff frequencies in the GHz range, the distance between the coplanar electrodes (5, 6) expediently narrowing conically in their longitudinal direction. In addition, the arrangement can advantageously be used to connect a two-band line to the rigid inner conductor of a coaxial cable.

Description

Die vorliegende Erfindung betrifft nach dem Oberbegriff des Patentanspruchs 1 eine Anordnung zur Herstellung eines Übergangs zwischen einer Mikrostripleitung und einer koplanaren Zweibandleitung.The present invention relates, according to the preamble of claim 1, to an arrangement for producing a transition between a microstrip line and a coplanar two-band line.

In Mikrowellenschaltungen und in Schaltungen der integrierten Optik, beispielsweise zur Ansteuerung schneller elektrooptischer Wellenleitermodulatoren werden neben Mikrostripleitungen auch häufig koplanare Zweibandleitungen verwendet. Beide Leitungstypen müssen häufig durch breitbandige Übergänge miteinander oder mit koaxialen Leitungen verbunden werden. Aus der Literatur sind beispielsweise breitbandige Übergänge zwischen steifen koaxialen Leitungen und koplanaren Zweibandleitungen bekannt. Ein Übergang von einem steifen Koaxialkabel auf beispielsweise eine Zweibandleitung in Dünnschichtschaltungen ist jedoch aufgrund der erforderlichen Verbindung des steifen Innenleiters des Koaxialkabels mit der dünnen Elektrode der Zweibandleitung technologisch schwierig.In microwave circuits and in circuits of integrated optics, for example for controlling fast electro-optical waveguide modulators, coplanar two-band lines are often used in addition to microstrip lines. Both types of line often have to be connected to one another or to coaxial lines using broadband transitions. For example, broadband transitions between rigid coaxial lines and coplanar two-band lines are known from the literature. A transition from a rigid coaxial cable to, for example, a two-band line in thin-film circuits is technologically difficult due to the required connection of the rigid inner conductor of the coaxial cable to the thin electrode of the two-band line.

Übergänge von koaxialen Steckern auf Mikrostripleitungen auf Al203-Trägern sind kommerziell erhältlich.Transitions from coaxial connectors to microstrip lines on Al 2 0 3 carriers are commercially available.

Aufgabe der vorliegenden Erfindung ist es, eine einfache Anordnung zur Herstellung eines breitbandigen Übergangs zwischen einer Mikrostripleitung und einer koplanaren Zweibandleitung anzugeben. Ed 1 Sti/16.5.1984 Diese Aufgabe wird gemäß dem kennzeichnenden Teil des Patentanspruchs 1 dadurch gelöst, daß die Mikrostripleitung und die koplanare Zweibandleitung quer zueinander geführt und so angeordnet sind, daß die Masseelektrode der Mikrostripleitung und die Masseelektrode der Zweibandleitung unmittelbar aufeinanderliegen, und daß eine streifenförmige andere Elektrode der Mikrostripleitung und die dazu quer verlaufende und zur breiteren Masseelektrode der Zweibandleitung koplanare schmalere streifenförmige Elektrode der dadurch asymmetrischen Zweibandleitung durch ein oder mehrere Bändchen oder Drähtchen aus elektrisch leitendem Material miteinander verbunden sind.The object of the present invention is to provide a simple arrangement for producing a broadband transition between a microstrip line and a coplanar two-band line. Ed 1 sti / May 16, 1984 This object is achieved according to the characterizing part of patent claim 1 in that the microstrip line and the coplanar two-band line are guided transversely to one another and are arranged such that the ground electrode of the microstrip line and the ground electrode of the two-band line lie directly on top of one another, and that a strip-shaped other electrode of the microstrip line and the narrower strip-shaped electrode of the asymmetrical two-band line, which runs transversely thereto and is coplanar with the wider ground electrode of the two-band line, is connected to one another by one or more ribbons or wires made of electrically conductive material.

Eine bevorzugte Ausführungsform der erfindungsgemäßen Anordnung ist gemäß Anspruch 1 so ausgestaltet, daß die beiden Enden der schmaleren Elektrode der asymmetrischen Zweibandleitung mit jeweils einer quer dazu verlaufenden streifenförmigen Elektrode der Nikrostripleitung durch jeweils ein oder mehrere nebeneinander angeordnete Bändchen oder Drähtchen aus elektrisch leitendem Material verbunden sind.A preferred embodiment of the arrangement according to the invention is designed in such a way that the two ends of the narrower electrode of the asymmetrical two-band line are each connected to a strip-shaped electrode of the microstrip line running transversely thereto by one or more bands or wires of electrically conductive material arranged next to one another.

Eine weitere bevorzugte Ausführungsform der erfindungsgemäßen Anordnung ist nach Anspruch 3 so ausgestaltet, daß die eine oder mehreren streifenförmigen Elektroden der Mikrostripleitung und deren Masseelektrode auf einander gegenüberliegenden Seiten eines dünnen Substrats aus elektrisch isolierendem Material, und die beiden koplanaren Elektroden der Zweibandleitung auf einer Seite eines Substrats aus dielektrischem Material angeordnet sind. Dabei besteht vorzugsweise gemäß Anspruch 4 das Substrat der Mikrostripleitung aus Keramikmaterial und das Substrat der Zweibandleitung aus elektrooptischem Material.A further preferred embodiment of the arrangement according to the invention is designed such that the one or more strip-shaped electrodes of the microstrip line and their ground electrode on opposite sides of a thin substrate made of electrically insulating material, and the two coplanar electrodes of the two-band line on one side of a substrate are arranged from dielectric material. The substrate of the microstrip line preferably consists of ceramic material and the substrate of the two-band line consists of electro-optical material.

Eine vorteilhafte Ausführungsform der erfindungsgemäßen Anordnung, die als schneller integriert optischer Modulator verwendet werden kann, ist gemäß Anspruch 5 so ausgebildet, daß sich der Abstand zwischen den koplanaren Elektroden der Zweibandleitung in deren Längsrichtung verengt, wobei das Verhältnis zwischen der Breite der schmaleren Elektrode der Zweibandleitung und dem Abstand zwischen den beiden koplanaren Elektroden längs dieser Elektroden konstant gehalten ist. Bei dieser Ausführungsform ist zugleich ein für den breitbandigen Übergang günstiger größerer Abstand und ein für eine hohe Grenzfrequenz des Modulators im GHz-Bereich günstiger wesentlich kleinerer Abstand zwischen den koplanaren Elektroden der Zweibandleitung realisierbar.An advantageous embodiment of the arrangement according to the invention, which can be used as a faster integrated optical modulator, is designed according to claim 5 so that the distance between the coplanar electrodes of the two-band line narrows in the longitudinal direction thereof, the ratio between the width of the narrower electrode of the two-band line and the distance between the two coplanar electrodes along these electrodes is kept constant. In this embodiment, a larger distance, which is more favorable for the broadband transition, and a much smaller distance, which is more favorable for a high cut-off frequency of the modulator in the GHz range, can be realized between the coplanar electrodes of the two-band line.

Die erfindungsgemäße Anordnung wird vorteilhafterweise gemäß Anspruch 6 zur Herstellung eines breitbandigen Übergangs zwischen einer koaxialen Leitung und einer Zweibandleitung verwendet, wobei ein Übergang zwischen der koaxialen Leitung und der Mikrostripleitung hergestellt wird. Dieser Übergang von der koaxialen Leitung, beispielsweise einem Koaxialkabel, auf die Mikrostripleitung kann mit kommerziell erhältlichen Bauteilen erfolgen.The arrangement according to the invention is advantageously used in accordance with claim 6 for producing a broadband transition between a coaxial line and a two-band line, a transition being produced between the coaxial line and the microstrip line. This transition from the coaxial line, for example a coaxial cable, to the microstrip line can be done with commercially available components.

Ein Ausführungsbeispiel der Erfindung wird anhand der Figuren in der folgenden Beschreibung näher erläutert. Von den Figuren zeigen:

  • Figur 1 in perspektivischer Darstellung eine asymmetrische koplanare Zweibandleitung, deren Anfang und Ende jeweils durch einen breitbandigen Übergang mit einer Mikrostripleitung verbunden sind;
  • Figur 2 in einem Diagramm den bei einer speziell bemessenen Anordnung nach Figur 1 gemessenen Frequenzgang des Reflexionsfaktors S11 bzw. des Einfügeverlusts S21.
An embodiment of the invention is explained in more detail with reference to the figures in the following description. From the figures show:
  • Figure 1 is a perspective view of an asymmetric coplanar two-band line, the beginning and end of which are each connected to a microstrip line by a broadband transition;
  • FIG. 2 shows in a diagram the frequency response of the reflection factor S 11 or the insertion loss S 21 measured in a specially dimensioned arrangement according to FIG. 1.

Bei der Anordnung nach Figur 1 besteht die Zweibandleitung ZL aus der breiten streifenförmigen Masseelektrode 5 und der dazu koplanaren schmäleren streifenförmigen Elektrode 6 auf der Oberseite.des Substrats 7. Die Unterseite des Substrats 7 kann zusätzlich metallisiert und mit Masse verbunden sein. Der Wellenwiderstand Z0 der Zweibandleitung wird durch die Parameter c/b, b/D und die Dielektrizitätskonstante ετ des Materials bestimmt, aus dem das Substrat 7 besteht. Dabei bedeuten b den Abstand zwischen den parallel verlaufenden streifenförmigen Elektroden 5 und 6 der Zweibandleitung ZL, c die Breite der schmaleren Elektrode 6 der Zweibandleitung ZL und D die Dicke des Substrats 7. Für ein Substrat aus LiNn03 und Z0 = 50 Ohm ist beispielsweise das Verhältnis c/b näherungsweise 0,6, wenn D ungleich größer als b ist.In the arrangement according to FIG. 1, the two-band line ZL consists of the wide strip-shaped ground electrode 5 and the narrower strip-shaped electrode 6 coplanar with it on the top of the substrate 7. The bottom of the substrate 7 can additionally be metallized and connected to ground. The characteristic impedance Z 0 of the two-band line is determined by the parameters c / b, b / D and the dielectric constant ε τ of the material from which the substrate 7 is made. Here, b is the distance between the parallel strip-shaped electrodes 5 and 6 of the two-band line ZL, c is the width of the narrower electrode 6 of the two-band line ZL and D is the thickness of the substrate 7. For a substrate made of LiNn0 3 and Z 0 = 50 ohms, for example the ratio c / b approximately 0.6 if D is unequal greater than b.

Die Mikrostripleitung-ML ist beispielsweise auf dem Substrat 1 aus A1203 mit einer Dicke t von etwa 0,6 mm aufgebracht. Die Masseelektrode 4 ist durch ganzflächige Metallisierung der Unterseite des Keramiksubstrats 1 gebildet und auf der Oberseite sind die streifenförmigen Elektroden 2 und 3 in Form von Metallstreifen der Breite w aufgebracht, die senkrecht zur schmäleren streifenförmigen Elektrode 6 der Zweibandleitung ZL verlaufen. Im vorliegenden Fall des 0,6 mm dicken Substrats 1 aus Al2O3 beträgt die Breite w der Elektroden 2 und 3 für eine 50 Ohm-Leitung etwa -1,2 mm. Der breitbandige Übergang von der Mikrostripleitung ML auf die Zweibandleitung ZL wird wie folgt erzielt: Die Unterseite der Mikrostripleitung ML, auf der sich die Masseelektrode 4 befindet, wird beispielsweise durch Einfügen eines Federblechs in guten elektrischen Kontakt mit der Masse- elektrode 5 der Zweibandleitung ZL auf der Oberfläche des Substrats 7 gebracht. Die "heißen" streifenförmigen Elektroden 2 und 3 der Mikrostripleitung ML werden mit der zur Masseelektrode 5 koplanaren "heißen" Elektrode 6 der Zweibandleitung ZL über leitende Bändchen oder Drähtchen 21 bzw. 31 beispielsweise durch Bonden verbunden.The microstrip line ML is applied, for example, to the substrate 1 made of A1 2 0 3 with a thickness t of approximately 0.6 mm. The ground electrode 4 is formed by full-surface metallization of the underside of the ceramic substrate 1 and on the top the strip-shaped electrodes 2 and 3 are applied in the form of metal strips of width w, which run perpendicular to the narrower strip-shaped electrode 6 of the two-band line ZL. In the present case of the 0.6 mm thick substrate 1 made of Al 2 O 3, the width w of the electrodes 2 and 3 for a 50 Ohm - line approximately -1.2 mm. The broadband transition from the microstrip line ML to the two-band line ZL is achieved as follows: the underside of the Microstrip line ML, on which the ground electrode 4 is located, is brought into good electrical contact with the ground electrode 5 of the two-band line ZL on the surface of the substrate 7, for example by inserting a spring plate. The "hot" strip-shaped electrodes 2 and 3 of the microstrip line ML are connected to the "hot" electrode 6 of the two-band line ZL, which is coplanar with the ground electrode 5, via conductive tapes or wires 21 and 31, for example by bonding.

Die Optimierung des breitbandigen Übergangs erfolgt durch die richtige Wahl der Dimensionen a, b, c und d, von denen a den Abstand des Endes der Mikrostripleitung ML auf der breiteren Masseelektrode 5 der Zweibandleitung ZL von dem der koplanaren schmäleren Elektrode 6 gegenüberliegenden Rand der breiteren Masseelektrode 5, und d die Breite oder der Durchmesser der Bändchen oder Drähtchen 21, 31 bedeuten.The optimization of the broadband transition takes place through the correct choice of the dimensions a, b, c and d, of which a the distance of the end of the microstrip line ML on the wider ground electrode 5 of the two-band line ZL from the edge of the wider ground electrode opposite the coplanar narrower electrode 6 5, and d mean the width or the diameter of the ribbon or wire 21, 31.

Für das ausgewählte Beispiel der 50 Ohm-Mikrostripleitung ML auf 0,6 mm dickem Substrat 1 aus A1203 und der asymmetrischen koplanaren Zweibandleitung ZL auf 1,5 mm dickem Substrat aus LiNb03 haben sich beispielsweise folgende Dimensionen bewährt: a = 0 bis 0,5 mm, b ungefähr 0,25 mm und c./b ungefähr 0,6.For the selected example of the 50 ohm microstrip line ML on a 0.6 mm thick substrate 1 made of A1 2 0 3 and the asymmetrical coplanar two-band line ZL on a 1.5 mm thick substrate made of LiNb0 3 , the following dimensions have proven themselves, for example: a = 0 to 0.5 mm, b approximately 0.25 mm and c./b approximately 0.6.

Von den beiden Kurven A und B in Figur 2 zeigt Kurve A den gemessenen Frequenzgang des Reflexionsfaktors S11, der an der als Eingang fungierenden streifenförmigen Elektrode 2 der Mikrostripleitung ML und Kurve B den gemessenen Frequenzgang des Einfügeverlusts S21 für eine derartig bemessene Anordnung, bei der die Länge L der "heißen" Elektrode 6 der Zweibandleitung ZL 13 mm und deren Breite c = 120 µm bei c/b = 0,6 betrug, und bei der die streifenförmige Elektrode 3 der Mikrostripleitung ML mit 50 Ohm abgeschlossen war. Die Breite d der Bondbändchen 21 und 31 betrug jeweils 100 µm. Der Frequenzgang dürfte bei Verwendung breiterer Bändchen oder Drähtchen 21 und 31, beispielsweise mit einer Breite oder eines Durchmessers d von 200 bis 1000 um noch wesentlich besser sein.Of the two curves A and B in FIG. 2, curve A shows the measured frequency response of the reflection factor S 11 , the measured frequency response of the insertion loss S 21 for such an arrangement at the strip-shaped electrode 2 of the microstrip line ML and curve B the length L of the "hot" electrode 6 of the two-band line ZL was 13 mm and its width c = 120 μm at c / b = 0.6, and the stripe-shaped electrode 3 of the microstrip egg tion ML was completed with 50 ohms. The width d of the bond tapes 21 and 31 was 100 μm in each case. The frequency response should be much better when using wider ribbons or wires 21 and 31, for example with a width or a diameter d of 200 to 1000 .mu.m.

Das beschriebene Ausführungsbeispiel ist typisch für schnelle integriert optische Modulatoren. Der Abstand b zwischen den koplanaren Elektroden 5 und 6 der Zweibandleitung ZL soll in diesem Fall jedoch nur 5 bis 20 um betragen. Der Übergang von dem beim Ausführungsbeispiel verwendeten Abstand b von 250 µm auf Abstände von 5 bis 20 um kann dann einfach durch beispielsweise taperförmige Verengung des Abstands zwischen den koplanaren Elektroden 5 und 6 in Längsrichtung dieser Elektroden erfolgen, wobei das Verhältnis c/b längs der Elektroden 5 und 6 konstant gehalten wird. Nach diesem Prinzip wurden bereits Modulatoren mit über 4 GHz Grenzfrequenz bei einer Länge L der heißen Elektrode 6 der Zweibandleitung ZL von 13 mm erprobt.The exemplary embodiment described is typical for fast integrated optical modulators. In this case, however, the distance b between the coplanar electrodes 5 and 6 of the two-band line ZL should only be 5 to 20 μm. The transition from the distance b of 250 μm used in the exemplary embodiment to distances of 5 to 20 μm can then be made simply by, for example, tapering the distance between the coplanar electrodes 5 and 6 in the longitudinal direction of these electrodes, the ratio c / b along the electrodes 5 and 6 is kept constant. According to this principle, modulators with a limit frequency of over 4 GHz and a length L of the hot electrode 6 of the two-band line ZL of 13 mm have already been tested.

Claims (6)

1. Anordnung zur Herstellung eines breitbandigen Übergangs zwischen einer Mikrostripleitung und einer koplanaren Zweibandleitung,
dadurch gekennzeichnet . daß
die Mikrostripleitung (ML) und die koplanare Zweibandleitung (ZL) quer zueinander geführt und so angeordnet sind, daß die Masseelektrode (4) der Mikrostripleitung (ML) und die Masseelektrode (5) der Zweibandleitung (ZL) unmittelbar aufeinander liegen, und daß eine streifenförmige andere Elektrode (2; 3) der Mikrostriopleitung (ML) und die dazu quer verlaufende und zur breiteren Masseelektrode (5) der Zweibandleitung (ZL) koplanare schmalere streifenförmige Elektroden (6) der dadurch asymmetrischen Zweibandleitung (ZL) durch ein oder mehrere Bändchen oder Drähtchen (21; 31) aus elektrisch leitendem Material miteinander verbunden sind.
1. Arrangement for producing a broadband transition between a microstrip line and a coplanar two-band line,
characterized . that
the microstrip line (ML) and the coplanar two-band line (ZL) are guided transversely to one another and are arranged such that the ground electrode (4) of the microstrip line (ML) and the ground electrode (5) of the two-band line (ZL) lie directly on top of one another, and that a strip-shaped other electrode (2; 3) of the microstrip line (ML) and the narrower strip-shaped electrodes (6) of the asymmetrical two-band line (ZL) through one or more ribbons or wires that run transversely to the wider ground electrode (5) of the two-band line (ZL) (21; 31) of electrically conductive material are interconnected.
2. Anordnung nach Anspruch 1, dadurch gekennzeichnet , daß die beiden Enden (61, 62) der schmaleren streifenförmigen Elektrode (6) der asymmetrischen Zweibandleitung (ZL) mit jeweils einer quer dazu verlaufenden streifenförmigen Elektrode (2, 3) der Mikrostripleitung (ML) durch jeweils ein oder mehrere Bändchen oder Drähtchen (21, 31) aus elektrisch leitendem Material verbunden sind.2. Arrangement according to claim 1, characterized in that the two ends (61, 62) of the narrower strip-shaped electrode (6) of the asymmetrical two-band line (ZL), each with a transverse strip-shaped electrode (2, 3) of the microstrip line (ML) are connected by one or more ribbons or wires (21, 31) made of electrically conductive material. 3. Anordnung nach Anspruch 1 oder 2, dadurch gekennzeichnet , daß die eine oder mehreren streifenförmigen Elektroden (2, 3) der Mikrostripleitung (ML) und deren Masseelektrode (4) auf einander gegenüberliegenden Seiten eines dünnen Substrats (1) aus elektrisch isolierendem Material und die beiden koplanaren Elektroden (5, 6) der Zweibandleitung (ZL) auf einer Seite eines Substrats (7) aus dielektrischem Material angeordnet sind.3. Arrangement according to claim 1 or 2, characterized in that the one or more strip-shaped electrodes (2, 3) of the microstrip line (ML) and their ground electrode (4) on opposite sides of a thin substrate (1) made of electrically insulating material and the two coplanar electrodes (5, 6) of the two-band line (ZL) are arranged on one side of a substrate (7) made of dielectric material. 4. Anordnung nach Anspruch 3, dadurch gekennzeichnet , daß das Substrat (7) der Zweibandleitung (ZL) aus elektrooptischem Material besteht.4. Arrangement according to claim 3, characterized in that the substrate (7) of the two-band line (ZL) consists of electro-optical material. 5. Anordnung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß sich der Abstand zwischen den koplanaren Elektroden (5, 6) der Zweibandleitung (ZL) in deren Längsrichtung verengt, wobei das Verhältnis zwischen der Breite (c) der schmaleren Elektrode (6) der Zweibandleitung und dem Abstand (b) zwischen den beiden koplanaren Elektroden (5, 6) längs dieser Elektroden konstant gehalten ist.5. Arrangement according to one of the preceding claims, characterized in that the distance between the coplanar electrodes (5, 6) of the two-band line (ZL) narrows in the longitudinal direction thereof, the ratio between the width (c) of the narrower electrode (6) the two-band line and the distance (b) between the two coplanar electrodes (5, 6) is kept constant along these electrodes. 6. Verwendung einer Anordnung nach einem der vorhergehenden Ansprüche zur Herstellung eines breitbandigen Übergangs zwischen einer koaxialen Leitung und einer Zweibandleitung, wobei ein Übergang zwischen der koaxialen Leitung und der Mikrostripleitung hergestellt wird.6. Use of an arrangement according to one of the preceding claims for producing a broadband transition between a coaxial line and a two-band line, wherein a transition between the coaxial line and the microstrip line is produced.
EP85106530A 1984-06-01 1985-05-28 Device for realising a transition between a microstrip line and a two-strip coplanar line Withdrawn EP0163289A3 (en)

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DE3420599 1984-06-01
DE3420599 1984-06-01

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US4891616A (en) * 1988-06-01 1990-01-02 Honeywell Inc. Parallel planar signal transmission system
US5225797A (en) * 1992-04-27 1993-07-06 Cornell Research Foundation, Inc. Dielectric waveguide-to-coplanar transmission line transitions
JP3841933B2 (en) * 1997-08-28 2006-11-08 富士通株式会社 Optical waveguide module
KR100618378B1 (en) 2005-02-25 2006-08-31 삼성전자주식회사 Apparatus for wideband transmission conversion from CWP to parallel transmission line

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DE1191445B (en) * 1962-02-07 1965-04-22 Rohde & Schwarz Balancing arrangement for high frequency electromagnetic waves
FR2254889A1 (en) * 1973-12-14 1975-07-11 Lignes Telegraph Telephon Connection between microwave lines - has microwave line projecting from conductor of gap type transmission line
FR2449977A1 (en) * 1979-02-20 1980-09-19 Thomson Csf Transmission line coupler for ribbon and coplanar lines - is formed on one dielectric plate and is extension of coplanar line on one face electrically coupled to ribbon line earth plane

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DE1191445B (en) * 1962-02-07 1965-04-22 Rohde & Schwarz Balancing arrangement for high frequency electromagnetic waves
FR2254889A1 (en) * 1973-12-14 1975-07-11 Lignes Telegraph Telephon Connection between microwave lines - has microwave line projecting from conductor of gap type transmission line
FR2449977A1 (en) * 1979-02-20 1980-09-19 Thomson Csf Transmission line coupler for ribbon and coplanar lines - is formed on one dielectric plate and is extension of coplanar line on one face electrically coupled to ribbon line earth plane

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US4692720A (en) 1987-09-08
EP0163289A3 (en) 1987-08-19
JPS614016A (en) 1986-01-09

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