EP0163005A1 - Reflexion phase-shifter - Google Patents

Reflexion phase-shifter Download PDF

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Publication number
EP0163005A1
EP0163005A1 EP85101600A EP85101600A EP0163005A1 EP 0163005 A1 EP0163005 A1 EP 0163005A1 EP 85101600 A EP85101600 A EP 85101600A EP 85101600 A EP85101600 A EP 85101600A EP 0163005 A1 EP0163005 A1 EP 0163005A1
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EP
European Patent Office
Prior art keywords
waveguide
phase shifter
semiconductor element
housing
tuning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP85101600A
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German (de)
French (fr)
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EP0163005B1 (en
Inventor
Rainer Dr. Geissler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bosch Telecom GmbH
Original Assignee
ANT Nachrichtentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANT Nachrichtentechnik GmbH filed Critical ANT Nachrichtentechnik GmbH
Priority to AT85101600T priority Critical patent/ATE33910T1/en
Publication of EP0163005A1 publication Critical patent/EP0163005A1/en
Application granted granted Critical
Publication of EP0163005B1 publication Critical patent/EP0163005B1/en
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/185—Phase-shifters using a diode or a gas filled discharge tube

Definitions

  • the present invention relates to a reflection phase shifter, consisting of a short-circuited, height-reduced waveguide, at least one switchable semiconductor component arranged therein, which is accommodated in a housing, and at least one tuning pin protruding into the height-reduced waveguide.
  • Such a reflection phase shifter is known from the microwave magazine, Vol. 8, No. 6, 1982, pages 688-690.
  • the semiconductor element, a PIN diode, housed in a housing is firmly arranged in a waveguide with a reduced height.
  • this waveguide also has a reduced width, so that it acts like a blocking wave waveguide.
  • tuning pins protruding into the blocking wave waveguide are required in order to set the phase shifter to a desired phase angle and to tune this phase angle to a broad frequency band.
  • the invention is based on the object of specifying a reflection phase shifter of the type mentioned at the outset, which requires fewer tuning pins in order to be able to set it to a desired phase angle over a wide band.
  • this object is achieved in that the housing with the semiconductor element, as a function of a tuning device, projects through a wall of the height-reduced waveguide into the latter with an adjustable penetration depth, and in that the tuning pin faces the housing of the semiconductor element.
  • the reflection phase shifter according to the invention can be easily and with ge, since it needs only a few tuning means vote in a short amount of time.
  • the reflection phase shifter shown in FIGS. 1 and 2 consists of a waveguide 1 with a reduced height and short-circuited on one side, at the open end of which a waveguide section 2 with a linear cross-sectional expansion is connected, which merges with a waveguide 3 with cross-sectional dimensions designed for the operating frequency. Via the waveguide 3 with normal cross-sectional dimensions, a high-frequency signal is fed to the height-reduced waveguide 1, which is reflected therein, undergoes a certain phase shift and then runs back through the waveguide 3.
  • the reduced-height waveguide 1 there is a switchable semiconductor element 5 housed in a housing 4, a PIN diode.
  • a PIN diode By reducing the height of the waveguide 1 in which the diode 5 is located, the waveguide line impedance is reduced, which results in a better coupling between the diode and the waveguide.
  • the housing 4 with the PIK diode 5 protrudes through a waveguide wall on the broad side into the height-reduced waveguide 1 and is held screwable in the waveguide wall so that the penetration depth of the housing 4 can be adjusted.
  • the housing 4 thus has the function of a tuning device with a variable penetration depth.
  • About the depth of penetration dee lenosuses 4 in the height-reduced waveguide 1 can be set in a desired range phase angle.
  • the housing 4 is brought into such a position that the frequency response of the phase moves in an angular range from 70 ° to 110 ° in a frequency band from 17.7 GHz to 19.7 GHz.
  • an adjustable tuning pin 6 made of sapphire. Sapphire shows a much better broadband tuning behavior compared to metal tuning pins, where unwanted resonances can easily occur.
  • the pitch of the frequency response of the phase depends on the depth of penetration of the tuning pin 6 into the waveguide 1 with a reduced height. So that the phase shifter becomes broadband, this tuning pin 6 is to be set so that the frequency response of the phase is flat over the largest possible frequency range. Since the diode impedance is compensated here directly in the diode plane by the tuning pin, and frequency dependency due to line transformations is thereby avoided, the arrangement is very broadband.
  • the reflection phase shifter can thus be broadband tuned to a desired phase shift.
  • a section AA through the reflection phase shifter the supply voltage is fed through a waveguide wall which is perpendicular to the waveguide wall penetrated by the housing 4 of the PIN diode, via a wire 7 of the PIN diode.
  • the wire 7 should be very thin so that the field in the height-reduced waveguide 1 is disturbed as little as possible.
  • the length of the wire 7 is about a quarter of the operating wavelength ⁇ on a coaxial line, so that the short circuit of a low-pass filter connected to the wire - in the form of an X / 4 Radial line transformer 8 (choke structure) is transformed into an open circuit on the PIN diode.

Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

A reflection phase shifter connectable to a waveguide for shifting the phase of a high frequency signal received from the waveguide. The phase shifter includes a waveguide section having two pairs of opposite side walls and an end wall forming a short-circuit. The side walls define a cavity and an opening opposite to the end wall for communication with the waveguide. The waveguide section has a broad dimension between one pair of opposite side walls corresponding to the width dimension of the waveguide and a narrow dimension between the other pair of opposite side walls which is smaller than the height dimension of the waveguide. A switchable semiconductor arrangement, including a switching semiconductor element and a housing for accommodating the switching semiconductor element, is adjustably mounted in a side wall of the waveguide section and penetrates into the said cavity with a controllable penetration depth for tuning said waveguide section for a desired phase angle shift. A tuning pin is mounted in a side wall of the waveguide section so that the tuning pin is disposed opposite the switchable semiconductor arrangement.

Description

Die vorliegende Erfindung betrifft einen Reflexionsphasenschieber, bestehend aus einem kurzgeschlossenen, höhenreduzierten Hohlleiter, mindestens einem darin angeordneten schaltbaren Halbleiterbauelement, das in einem Gehäuse untergebracht ist, und mindestens einem in den höhenreduzierten Hohlleiter hineinragenden Abstimmstift.The present invention relates to a reflection phase shifter, consisting of a short-circuited, height-reduced waveguide, at least one switchable semiconductor component arranged therein, which is accommodated in a housing, and at least one tuning pin protruding into the height-reduced waveguide.

Ein derartiger Reflexionsphasenschieber ist aus dem Mikrowellen Magazin, Vol. 8, Nr. 6, 1982, Seiten 688-690 bekannt. Hier ist das in einem Gehäuse untergebrachte Halbleiterelement, eine PIN-Diode, fest in einem Hohlleiter mit reduzierter Höhe angeordnet. Allerdings besitzt dieser Hohlleiter auch eine reduzierte Breite, so daß er wie ein Sperrwellenhohlleiter wirkt. Mehrere in den Sperrwellenhohlleiter hineinragende Abstimmstifte sind erforderlich, um den Phasenschieber auf einen gewünschten Phasenwinkel einzustellen und diesen Phasenwinkel auf ein breites Frequenzband abzustimmen.Such a reflection phase shifter is known from the microwave magazine, Vol. 8, No. 6, 1982, pages 688-690. Here, the semiconductor element, a PIN diode, housed in a housing, is firmly arranged in a waveguide with a reduced height. However, this waveguide also has a reduced width, so that it acts like a blocking wave waveguide. Several tuning pins protruding into the blocking wave waveguide are required in order to set the phase shifter to a desired phase angle and to tune this phase angle to a broad frequency band.

Der Erfindung liegt nun die Aufgabe zugrunde, einen Reflexionsphasenschieber der eingangs genannten Art anzugeben, der mit weniger Abstimmstiften auskommt, um ihn breitbandig auf einen gewünschten Phasenwinkel einstellen zu können.The invention is based on the object of specifying a reflection phase shifter of the type mentioned at the outset, which requires fewer tuning pins in order to be able to set it to a desired phase angle over a wide band.

Erfindungsgemäß wird diese Aufgabe dadurch gelöst, daß das Gehäuse mit dem Halbleiterelement in Funktion einer Abstimmvorrichtung durch eine Wand des höhenreduzierten Hohlleiters in diesen mit verstellbarer Eindringtiefe hineinragt und daß der Abstimmstift dem Gehäuse des Halbleiterelements gegenübersteht.According to the invention, this object is achieved in that the housing with the semiconductor element, as a function of a tuning device, projects through a wall of the height-reduced waveguide into the latter with an adjustable penetration depth, and in that the tuning pin faces the housing of the semiconductor element.

Zweckmäßige Ausführungen der Erfindung gehen aus den Unteransprüchen hervor.Appropriate embodiments of the invention emerge from the subclaims.

Der erfindungsgemäße Reflexionsphasenschieber läßt sich, da er mit wenigen Abstimmitteln auskommt, leicht und mit geringem Zeitaufwand abstimmen.The reflection phase shifter according to the invention can be easily and with ge, since it needs only a few tuning means vote in a short amount of time.

Anhand eines in der Zeichnung dargestellten Ausführungsbeispiels wird nachfolgend die Erfindung näher erläutert. Es zeigen:

  • Fig. 1 einen Längsschnitt durch die Breitseite und
  • Fig. 2 einen Längsschnitt A-A durch die Schmalseite eines Reflexionsphasenschiebers.
Based on an embodiment shown in the drawing, the invention is explained in more detail below. Show it:
  • Fig. 1 shows a longitudinal section through the broadside and
  • Fig. 2 shows a longitudinal section AA through the narrow side of a reflection phase shifter.

Der in den Figuren 1 und 2 dargestellte Reflexionsphasenschieber besteht aus einem einseitig kurzgeschlossenen, höhenreduzierten Hohlleiter 1, an dessen offenem Ende sich ein Hohlleiterabschnitt 2 mit linearer Querschnittserweiterung anschließt, der auf einen Hohlleiter 3 mit für die Betriebsfrequenz ausgelegten Querschnittsabmessungen übergeht. über den Hohlleiter 3 mit normalen Querschnittsabmessungen wird dem höhenreduzierten Hohlleiter 1 ein Hochfrequenzsignal zugeführt, welches darin reflektiert wird, dabei eine bestimmte Phasenverschiebung erleidet und dann durch den Hohlleiter 3 wieder zurückläuft.The reflection phase shifter shown in FIGS. 1 and 2 consists of a waveguide 1 with a reduced height and short-circuited on one side, at the open end of which a waveguide section 2 with a linear cross-sectional expansion is connected, which merges with a waveguide 3 with cross-sectional dimensions designed for the operating frequency. Via the waveguide 3 with normal cross-sectional dimensions, a high-frequency signal is fed to the height-reduced waveguide 1, which is reflected therein, undergoes a certain phase shift and then runs back through the waveguide 3.

In dem höhenreduzierten Hohlleiter 1 befindet sich ein in einem Gehäuse 4 untergebrachtes schaltbares Halbleiterelement 5, eine PIN-Diode. Durch die Reduzierung der Höhe des Hohlleiters 1, in dem sich die Diode 5 befindet, wird der Hohlleiterleitungswellenwiderstand verkleinert, wodurch eine bessere Kopplung zwischen der Diode und dem Hohlleiter entsteht. Das Gehäuse 4 mit der PIK-Diode 5 ragt durch eine Hohlleiterwand der Breitseite in den höhenreduzierten Hohlleiter 1 hinein und ist in der Hohlleiterwand schraubbar gehalten, so daß die Eindringtiefe des Gehäuses 4 verstellt werden kann. Somit kommt dem Gehäuse 4 mit veränderbarer Eindringtiefe die Funktion einer Abstimmvorrichtung zu.In the reduced-height waveguide 1 there is a switchable semiconductor element 5 housed in a housing 4, a PIN diode. By reducing the height of the waveguide 1 in which the diode 5 is located, the waveguide line impedance is reduced, which results in a better coupling between the diode and the waveguide. The housing 4 with the PIK diode 5 protrudes through a waveguide wall on the broad side into the height-reduced waveguide 1 and is held screwable in the waveguide wall so that the penetration depth of the housing 4 can be adjusted. The housing 4 thus has the function of a tuning device with a variable penetration depth.

über die Eindringtiefe dee lehäuses 4 in den höhenreduzierten Hohlleiter 1 läßt sich ein in einem gewünschten Bereich liegender Phasenwinkel einstellen. Z. B. wird das Gehäuse 4 in eine solche Position gebracht, daß sich in einem Frequenzband von 17,7 GHz bis 19,7 GHz der Frequenzgang der Phase in einem Winkelbereich von 70° - 110° bewegt.About the depth of penetration dee lehäuses 4 in the height-reduced waveguide 1 can be set in a desired range phase angle. For example, the housing 4 is brought into such a position that the frequency response of the phase moves in an angular range from 70 ° to 110 ° in a frequency band from 17.7 GHz to 19.7 GHz.

Direkt dem Gehäuse 4 mit der PIN-Diode 5 gegenüber in der Hohlleiterwand befindet sich, wie Fig. 1 zeigt, ein verstellbarer Abstimmstift 6 aus Saphir. Saphir zeigt ein wesentlich besseres Breitbandabstimmverhalten gegenüber sonst verwendeten Metallabstimmstiften, an denen leicht unerwünschte Resonanzen auftreten können. Von der Eindringtiefe des Abstimmstiftes 6 in den Hohlleiter 1 mit reduzierter Höhe hängt die Stegung des Frequenzganges der Phase ab. Damit der Phasenschieber breitbandig wird, ist dieser Abstimmstift 6 so einzustellen, daß der Frequenzgang der Phase über einen möglichst großen Frequenzbereich eben verläuft. Da hier die Diodenimpedanz durch den Abstimmstift direkt in der Diodenebene kompensiert wird, und dadurch eine Frequenzabhängigkeit durch Leitungstransformationen vermieden wird, ist die Anordnung sehr breitbandig.Directly opposite the housing 4 with the PIN diode 5 in the waveguide wall, as shown in FIG. 1, there is an adjustable tuning pin 6 made of sapphire. Sapphire shows a much better broadband tuning behavior compared to metal tuning pins, where unwanted resonances can easily occur. The pitch of the frequency response of the phase depends on the depth of penetration of the tuning pin 6 into the waveguide 1 with a reduced height. So that the phase shifter becomes broadband, this tuning pin 6 is to be set so that the frequency response of the phase is flat over the largest possible frequency range. Since the diode impedance is compensated here directly in the diode plane by the tuning pin, and frequency dependency due to line transformations is thereby avoided, the arrangement is very broadband.

Allein mit dem verstellbaren Gehäuse 4 der PIN-Diode und einem einzigen in der Diodenebene angeordneten Abstimmstift 6 läßt sich also der Reflexionsphasenschieber breitbandig auf eine gewünschte Phasenverschiebung abstimmen.Alone with the adjustable housing 4 of the PIN diode and a single tuning pin 6 arranged in the diode plane, the reflection phase shifter can thus be broadband tuned to a desired phase shift.

Wie der Fig. 2, einem Schnitt A-A durch den Reflexionsphasenschieber, zu entnehmen ist, wird durch eine Hohlleiterwand, die senkrecht zu der vom Gehäuse 4 der PIN-Diode durchdrungenen Hohlleiterwand steht, über einen Draht 7 der PIN-Diode die Versorgungsspannung zugeführt. Der Draht 7 sollte sehr dünn sein, damit das Feld in dem höhenreduzierten Hohlleiter 1 möglichst wenig gestört wird. Die Länge des Drahtes 7 beträgt etwa ein Viertel der Betriebswellenlänge λ auf einer Koaxialleitung, so daß der Kurzschluß eines an den Draht angeschlossenen Tiefpaßfilters - in Form eines X /4 Radialleitungs-Transformators 8 (Choke-Struktur) in einen Leerlauf an der PIN-Diode transformiert wird.As can be seen in FIG. 2, a section AA through the reflection phase shifter, the supply voltage is fed through a waveguide wall which is perpendicular to the waveguide wall penetrated by the housing 4 of the PIN diode, via a wire 7 of the PIN diode. The wire 7 should be very thin so that the field in the height-reduced waveguide 1 is disturbed as little as possible. The length of the wire 7 is about a quarter of the operating wavelength λ on a coaxial line, so that the short circuit of a low-pass filter connected to the wire - in the form of an X / 4 Radial line transformer 8 (choke structure) is transformed into an open circuit on the PIN diode.

Claims (6)

1. Reflexionsphasenschieber, bestehend aus einem kurzgeschlossenen, höhenreduzierten Hohlleiter, mindestens einem darin angeordneten schaltbaren Halbleiterbauelement, das in einem Gehäuse untergebracht ist, und mindestens einem in den höhenreduzierten Hohlleter hineinragenden Abstimmstift, dadurch gekennzeichnet, daß das Gehäuse (4) mit dem Halbleiterelement (5) in Funktion einer Abstimmvorrichtung durch eine Wand des höhenreduzierten Hohlleiters (1) in diesen mit verstellbarer Eindringtiefe hineinragt und daß der Abstimmstift (6) dem Gehäuse (4) des Halbleiterelements gegenübersteht.1. reflection phase shifter, consisting of a short-circuited, height-reduced waveguide, at least one switchable semiconductor component arranged therein, which is housed in a housing, and at least one tuning pin protruding into the height-reduced hollow meter, characterized in that the housing (4) with the semiconductor element (5 ) in the function of a tuning device protrudes through a wall of the height-reduced waveguide (1) into this with an adjustable penetration depth and that the tuning pin (6) faces the housing (4) of the semiconductor element. 2. Reflexionsphasenschieber nach Anspruch 1, dadurch gekennzeichnet, daß der Abstimmstift (6) aus Saphir besteht.2. reflection phase shifter according to claim 1, characterized in that the tuning pin (6) consists of sapphire. 3. Reflexionsphasenschieber nach Anspruch 1, dadurch gekennzeichnet, daß das Halbleiterelement (5) eine PIN- Diode ist.3. reflection phase shifter according to claim 1, characterized in that the semiconductor element (5) is a PIN diode. 4. Reflexionsphasenschieber nach Anspruch 1, dadurch gekennzeichnet, daß das Gehäuse (4) mit dem Halbleiterelement (5) und der Abstimmstift (6) in den einander gegenüberliegenden Wänden der Breitseite des höhenreduzierten Hohlleiters (1) angeordnet sind.4. reflection phase shifter according to claim 1, characterized in that the housing (4) with the semiconductor element (5) and the tuning pin (6) are arranged in the opposite walls of the broad side of the height-reduced waveguide (1). 5. Reflexionsphasenschieber nach Anspruch 1, dadurch gekennzeichnet, daß das Halbleiterelement (5) seine Versorgungsspannung über einen Draht (7) erhält, der durch eine Hohlleiterwand geführt ist, die senkrecht zu der vom Gehäuse (4) des Halbleiterelements (5) durchdrungenen Hohlleiterwand steht.5. reflection phase shifter according to claim 1, characterized in that the semiconductor element (5) receives its supply voltage via a wire (7) which is guided through a waveguide wall which is perpendicular to the waveguide wall penetrated by the housing (4) of the semiconductor element (5) . 6. Reflexionsphasenschieber nach Anspruch 5, dadurch gekennzeichnet, daß der Draht (7) etwa die Länge von einem Viertel der Betriebswellenlänge besitzt und an ein Tiefpaßfilter (8) angeschlossen ist.6. reflection phase shifter according to claim 5, characterized in that the wire (7) has approximately the length of a quarter of the operating wavelength and is connected to a low-pass filter (8).
EP85101600A 1984-04-27 1985-02-14 Reflexion phase-shifter Expired EP0163005B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT85101600T ATE33910T1 (en) 1984-04-27 1985-02-14 REFLECTION PHASE SHIFTER.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3415674 1984-04-27
DE19843415674 DE3415674A1 (en) 1984-04-27 1984-04-27 REFLECTION PHASE SHUTTER

Publications (2)

Publication Number Publication Date
EP0163005A1 true EP0163005A1 (en) 1985-12-04
EP0163005B1 EP0163005B1 (en) 1988-04-27

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EP85101600A Expired EP0163005B1 (en) 1984-04-27 1985-02-14 Reflexion phase-shifter

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US (1) US4613835A (en)
EP (1) EP0163005B1 (en)
AT (1) ATE33910T1 (en)
CA (1) CA1232036A (en)
DE (2) DE3415674A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3617568A1 (en) * 1986-05-24 1987-11-26 Licentia Gmbh Phase-shifting arrangement using waveguide technology

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB672543A (en) * 1950-02-08 1952-05-21 Gen Electric Co Ltd Improvements in or relating to crystal contact devices
US3452255A (en) * 1966-05-07 1969-06-24 Marconi Co Ltd Varactor diode devices
GB1180196A (en) * 1967-04-15 1970-02-04 Telefunken Patent Improvements in or relating to Phase Changers
US3521203A (en) * 1967-11-14 1970-07-21 Bell Telephone Labor Inc Magnetic mounting for pill-type diodes
FR2134610A1 (en) * 1971-04-28 1972-12-08 Japan Broadcasting Corp
DE2618785A1 (en) * 1974-10-22 1977-11-17 Licentia Gmbh Pin diode phase shifter for waveguides - has low diode input capacitance for more rapid phase changing
GB2018078A (en) * 1978-03-31 1979-10-10 Thomson Csf Solid state millimetre wave source
EP0090694A1 (en) * 1982-03-23 1983-10-05 Thomson-Csf Frequency-tunable oscillator comprising an oscillating diode and a variable-capacity diode, and a mechanical tuning method for such an oscillator

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB672543A (en) * 1950-02-08 1952-05-21 Gen Electric Co Ltd Improvements in or relating to crystal contact devices
US3452255A (en) * 1966-05-07 1969-06-24 Marconi Co Ltd Varactor diode devices
GB1180196A (en) * 1967-04-15 1970-02-04 Telefunken Patent Improvements in or relating to Phase Changers
US3521203A (en) * 1967-11-14 1970-07-21 Bell Telephone Labor Inc Magnetic mounting for pill-type diodes
FR2134610A1 (en) * 1971-04-28 1972-12-08 Japan Broadcasting Corp
DE2618785A1 (en) * 1974-10-22 1977-11-17 Licentia Gmbh Pin diode phase shifter for waveguides - has low diode input capacitance for more rapid phase changing
GB2018078A (en) * 1978-03-31 1979-10-10 Thomson Csf Solid state millimetre wave source
EP0090694A1 (en) * 1982-03-23 1983-10-05 Thomson-Csf Frequency-tunable oscillator comprising an oscillating diode and a variable-capacity diode, and a mechanical tuning method for such an oscillator

Also Published As

Publication number Publication date
US4613835A (en) 1986-09-23
DE3562434D1 (en) 1988-06-01
DE3415674A1 (en) 1985-10-31
EP0163005B1 (en) 1988-04-27
ATE33910T1 (en) 1988-05-15
CA1232036A (en) 1988-01-26

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