EP0142128A1 - Circuit arrangement for the drainage of overvoltages - Google Patents
Circuit arrangement for the drainage of overvoltages Download PDFInfo
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- EP0142128A1 EP0142128A1 EP84113450A EP84113450A EP0142128A1 EP 0142128 A1 EP0142128 A1 EP 0142128A1 EP 84113450 A EP84113450 A EP 84113450A EP 84113450 A EP84113450 A EP 84113450A EP 0142128 A1 EP0142128 A1 EP 0142128A1
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- 230000005693 optoelectronics Effects 0.000 claims abstract description 3
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- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000009795 derivation Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M3/00—Automatic or semi-automatic exchanges
- H04M3/18—Automatic or semi-automatic exchanges with means for reducing interference or noise; with means for reducing effects due to line faults with means for protecting lines
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
- H02H9/025—Current limitation using field effect transistors
Definitions
- the invention relates to a circuit arrangement for deriving overvoltages, in particular in switching systems with a main distributor and a subscriber module with electronic SLIC.
- FIG. 1 shows the basic circuit diagram of an overall protection circuit of a switching system, which consists of the main distributor HV and the subscriber module TB.
- a thyristor diode protection with the two thyristors Th1 and Th2 is provided in the main distributor HV for components that are not at high risk. This limits the residual voltage wet peaks to a certain value (e.g. 250 V).
- Guide values for thyristor diodes Th1 and Th2 are e.g. 100 A (10/100 us) or 500 A (8/20 ⁇ s).
- Additional gas arrester protection G1 or G2 is required in highly endangered areas, a decoupling resistor R1 or R2 being inserted between gas arrester G1, G2 and thyristor diode Th1, Th2.
- the two longitudinal branches a, a 'and b, b' respectively a current limiter S1 or S2 inserted, each consisting of two power MOS FETs connected in series and against one another. This ensures that only a limit current that is still tolerated by the electronic SLIC is permitted at the input overvoltage. In the event of overvoltage, the current limiters S1 and S2 therefore absorb the voltage peaks as the country voltage. It goes without saying that the voltage resistance of these limiters S1 and S2 must be above the maximum peak voltage that occurs (eg 300 V).
- the transmission technology requirements to be placed on a longitudinal element, such as low resistance and linearity in the operating range, are met by the power MOS FETs according to the invention.
- Two power MOS-FETs connected in series and one behind the other are required so that transfer and limiting functions can be performed even when the current direction is reversed. It is advantageous to combine the two drains in terms of circuitry, which enables a monolithic integration of the current limiters S1, S2.
- the maximum current e.g. limited to 150 mA at 300 V, there can be no overload with the maximum occurring transient disturbances with a duration of 1 ms.
- the peak currents still let through by the current limiter can still generate voltages above the operating voltages at the SLIC input a ', b', but these can be caused by the in any SLIC can also be derived with integrated clamping diodes D1 to D4. These clamping diodes D1 to D4 are required for the relative protection of the electronic SLIC and therefore do not generate any additional costs. Due to the limitation of the transient peak currents to 150 mA, these diodes D1 to D4 can remain small-sized.
- the diode protection in the electronic SLIC provides the necessary relative protection, i.e. it takes effect when the overvoltage exceeds the current battery voltage. With the division of the protection locations, a clearly clear demarcation of the protective properties and protection level is possible.
- This method can also be used for the standardization of the protection values, which is advantageous because the protection tasks in different areas of responsibility, e.g. Operating companies or system manufacturers.
- Fig. 2 the basic circuit diagram of a monolithically constructed current limiter S1 (S2) is given, which in the Longitudinal wires a / a 'or b / b' is arranged between the main distributor and subscriber module.
- the current limiter S1 (S2) consists of two power MOSFETs T1 and T1 ', the drains of which are combined in terms of circuitry, which are therefore arranged in series and connected to one another and thus have a common substrate (drain).
- Series resistors R, R 'and multiple diodes M and M' are used to set the bias voltage for current limiting in enhancement-type transistors.
- the voltage can also be reduced using Zener diodes.
- Transistors of the depletion type which are already conductive without a projection (gate and source connected) are more advantageous.
- the current limit value then has to be determined by the transistor parameters.
- FIG. 3 shows the characteristic curve of the current limiter element according to FIG. 2. As can be seen from the figure, the characteristic curve has an exact zero crossing, which is essential for the desired current limiter function.
- BORSCHT means Battery Feeding, Over Voltage Protection, Ringing, Signaling, Coding, Hybrid (4 wire-2 wire implementation), Testina.
- This Mehrfachko p pelddling comprises four transistors T1, T1 ', T1 ", T1''', whose drains are summarized circuitry.
- the ringing voltage (R) is couples or the connection of test equipment (T) are taken over.
- optoelectronic couplers 01, 01 ', 01'',01''' are used to generate the required positive bias voltage, which is suitable for setting a current limit value.
- the module shown in FIG. 4 can also be implemented using monolithically integrated technology, further power MOS-FETs (T1 '' '' ...) being able to be integrated, if necessary, for coupling in further of the functions mentioned above.
- the subject of the invention can also be used as an automatic longitudinal fuse in general device technology.
- a heat sensor that causes a circuit separation must be inserted during long-term exposure.
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- Engineering & Computer Science (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Interface Circuits In Exchanges (AREA)
- Structure Of Telephone Exchanges (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
- Indexing, Searching, Synchronizing, And The Amount Of Synchronization Travel Of Record Carriers (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Abstract
Description
Die Erfindung betrifft eine Schaltungsanordnung zur Ableitung von Überspannunqen, insbesondere in Vermittlungsanlagen mit einem Hauptverteiler und einer Teilnehmerbauaruppe mit elektronischem SLIC.The invention relates to a circuit arrangement for deriving overvoltages, in particular in switching systems with a main distributor and a subscriber module with electronic SLIC.
Mit dem Übergang vom konventionellen zum elektronischen SLIC (Subscriber Line Interface Circuit) in integrierter Bauweise ist ein neuer, von der IS-Technologie geforderter Schutz notwendig. Bisheriqe Vorschläge hatten im wesentlichen alleine die Ableitung der durch Überspannung entstehenden Ströme vorgesehen. Dadurch sind noch relativ hohe Ströme auch auf der Teilnehmerbaugruppe abzuleiten, was zu aufwendigen Konstruktionen führt und dem Aufbau moderner elektronischer Schaltungen widerspricht.With the transition from conventional to electronic SLIC (Subscriber Line Interface Circuit) in an integrated design, new protection is required, which is required by IS technology. Previous proposals had essentially provided for the derivation of the currents generated by overvoltage. As a result, relatively high currents can also be derived on the subscriber module, which leads to complex designs and contradicts the construction of modern electronic circuits.
Aufaabe der Erfindung ist es daher, eine Schaltungsanordnung zur Beseitigung von Überspannungen anzugeben, die zwischen Hauptverteiler und Teilnehmerbaugruppe angeordnet ist und bei Überspannung am Eingang nur einen Grenzstrom zuläßt, der vom elektronischen SLIC noch toleriert werden kann.It is therefore the task of the invention to provide a circuit arrangement for eliminating overvoltages, which is arranged between the main distributor and the subscriber module and, in the event of overvoltage at the input, only permits a limit current which can still be tolerated by the electronic SLIC.
Diese Aufgabe wird mit einer Schaltungsanordnung der eingangs genannten Art erfindunasgemäß dadurch gelöste daß in den Längszweigen der a/b-Adern vor dem elektronischen SLIC je zwei in Reihe und gegeneinander geschaltete als Strombegrenzer wirkende Leistungs-MOS-FET angeordnet sind. Zweckmäßige Weiterbildungen der Erfindung sind in den Unteransprüchen angeführt.This object is achieved according to the invention with a circuit arrangement of the type mentioned at the outset in that in the longitudinal branches of the a / b wires in front of the electronic SLIC, two power MOS FETs connected in series and in opposition to one another are arranged which act as current limiters. Appropriate developments of the invention are set out in the subclaims.
Die Vorteile des Gegenstandes der Erfindung werden anhand der folgenden Ausführungsbeispiele näher erläutert. In der dazuaehörenden Zeichnuna zeigen
- Fig. 1 ein Prinzipschaltbild,
- Fig. 2 einen monolithisch aufgebauten Strombegrenzer,
- Fig. 3 die Kennlinie des Strombearenzers nach Fig. 2 und
- Fig. 4 einen Mehrfachkoppelpunkt mit Stützfunktion.
- 1 is a block diagram,
- 2 shows a monolithic current limiter,
- Fig. 3 shows the characteristic curve of the current generator according to Fig. 2 and
- Fig. 4 shows a Mehrfachko p pelpunkt with support function.
In der Fig. 1 ist das Prinzipschaltbild einer Gesamtschutzschaltung einer Vermittlungsanlage dargestellt, die aus dem Hauptverteiler HV und der Teilnehmerbaugruppe TB besteht. Im Hauptverteiler HV ist für nicht stark gefährdete Bauteile ein Thyristordiodenschutz mit den beiden Thyristoren Th1 und Th2 vorgesehen. Dadurch werden die Restspannunasspitzen auf einen bestimmten Wert (z.B. 250 V) begrenzt. Richtwerte für die Thyristordioden Th1 bzw. Th2 sind z.B. 100 A (10/100 us) bzw. 500 A (8/20 µs). In stark gefährdeten Bereichen ist ein zusätzlicher Gasableiterschutz G1 bzw. G2 erforderlich, wobei zwischen Gasableiter G1, G2 und Thyristordiode Th1, Th2 je ein Entkopplungswiderstand R1 bzw. R2 eingefüqt ist.1 shows the basic circuit diagram of an overall protection circuit of a switching system, which consists of the main distributor HV and the subscriber module TB. A thyristor diode protection with the two thyristors Th1 and Th2 is provided in the main distributor HV for components that are not at high risk. This limits the residual voltage wet peaks to a certain value (e.g. 250 V). Guide values for thyristor diodes Th1 and Th2 are e.g. 100 A (10/100 us) or 500 A (8/20 µs). Additional gas arrester protection G1 or G2 is required in highly endangered areas, a decoupling resistor R1 or R2 being inserted between gas arrester G1, G2 and thyristor diode Th1, Th2.
Damit sind alle hohen Ableitströme auf den Hauptverteiler HV beschränkt und auf der TeilnehmerbaugrupDe TB können nur noch transiente Spannungsspitzen bis 250 V auftreten.This means that all high leakage currents are limited to the main distributor HV and only transient voltage peaks of up to 250 V can occur on the subscriber module TB.
Da der elektronische SLIC auf der Teilnehmerbaugruppe TB jedoch nur eine niedrige Sperrspannuna aufweist, ist die Restspitzenspannung von 250 V zu groß. Deshalb wird in die beiden Längszweige a, a' bzw. b, b' erfindunasgemäß je ein Strombegrenzer S1 bzw. S2 eingefügt, der aus je zwei in Reihe und gegeneinander geschalteten Leistungs-MOS-FET besteht. Dadurch wird gewährleistet, daß bei Überspannung am Eingang nur ein Grenzstrom zugelassen wird, der vom elektronischen SLIC noch toleriert wird. Die Strombegrenzer S1 bzw. S2 nehmen also bei Überspannung die Spannungsspitzen als Länasspannung auf. Es versteht sich, daß die Spannunasfestigkeit dieser Begrenzer S1 bzw. S2 über der maximal auftretenden Spitzenspannung liegen muß (z.B. 300 V).However, since the electronic SLIC on the subscriber module TB only has a low blocking voltage, the residual peak voltage of 250 V is too great. Therefore, according to the invention, the two longitudinal branches a, a 'and b, b', respectively a current limiter S1 or S2 inserted, each consisting of two power MOS FETs connected in series and against one another. This ensures that only a limit current that is still tolerated by the electronic SLIC is permitted at the input overvoltage. In the event of overvoltage, the current limiters S1 and S2 therefore absorb the voltage peaks as the country voltage. It goes without saying that the voltage resistance of these limiters S1 and S2 must be above the maximum peak voltage that occurs (eg 300 V).
Die an ein Längsglied zu stellenden übertragungstechnischen Anforderungen wie Niederohmigkeit und Linearität im Betriebsbereich werden von den erfindungsgemäßen Leistungs-MOS-FET erfüllt. Dabei sind zwei in Reihe und geaeneinander geschaltete Leistunas-MOS-FET erforderlich, damit auch bei Stromrichtungsumkehr Übertragungs- und Begrenzungsfunktionen erfüllbar sind. Es ist vorteilhaft, die beiden Drains schaltungstechnisch zusammenzufassen, was eine monolithische Integration der Strombegrenzer S1, S2 ermöglicht.The transmission technology requirements to be placed on a longitudinal element, such as low resistance and linearity in the operating range, are met by the power MOS FETs according to the invention. Two power MOS-FETs connected in series and one behind the other are required so that transfer and limiting functions can be performed even when the current direction is reversed. It is advantageous to combine the two drains in terms of circuitry, which enables a monolithic integration of the current limiters S1, S2.
Die Anforderungen an die Relativtoleranz der als Längswiderstände Ra, Rb in den beiden Adern a, b, a', b' wirkenden Strombegrenzer Sa bzw. Sb werden durch folgende Verknüpfungen festgelegt:
Ra, Rb ≤ 5Ω für I≤ ± 100 mA und ΔR = Ra - Rb| ≤ 1ΩThe requirements for the relative tolerance of the current limiters S a and S b acting as series resistances R a , R b in the two wires a, b, a ', b' are defined by the following relationships:
R a , R b ≤ 5Ω for I≤ ± 100 mA and ΔR = R a - R b | ≤ 1Ω
Wird der maximale Strom z.B. bei 300 V mit 150 mA begrenzt, so kann bei den maximal auftretenden Transientenstörungen mit 1 ms Dauer keine Überlastung erfolgen.If the maximum current e.g. limited to 150 mA at 300 V, there can be no overload with the maximum occurring transient disturbances with a duration of 1 ms.
Die vom Strombegrenzer noch durchgelassenen Spitzenströme können zwar am SLIC-Eingana a', b' noch Spannungen oberhalb der Betriebsspannungen erzeugen, die aber durch die in jedem SLIC ohnedies mitintegrierten Clamping-Dioden D1 bis D4 abgeleitet werden. Diese Clamping-Dioden D1 bis D4 werden zum Relativschutz des elektronischen SLIC benötigt und erzeugen deshalb keine zusätzlichen Kosten. Wegen der Begrenzung der Transientenspitzenströme auf 150 mA können diese Dioden D1 bis D4 kleinflächig dimensioniert bleiben.The peak currents still let through by the current limiter can still generate voltages above the operating voltages at the SLIC input a ', b', but these can be caused by the in any SLIC can also be derived with integrated clamping diodes D1 to D4. These clamping diodes D1 to D4 are required for the relative protection of the electronic SLIC and therefore do not generate any additional costs. Due to the limitation of the transient peak currents to 150 mA, these diodes D1 to D4 can remain small-sized.
Durch die Verteilung der Schutzmaßnahmen auf die einzelnen Schutzorte erzielt man die folgenden Vorteile.The following advantages are achieved by distributing the protective measures to the individual protection locations.
An den Ausgangsklemmen a, b des Hauptverteilers HV treten nur noch niedere Spannungen auf, die nachfolgend keine besonderen Isolationsabstände erfordern. Die Absorption bzw. Reflexion der mit der Überspannung verbundenen Störenergie erfolgt zum größten Teil im Hauptverteiler HV, der von seiner mechanischen Konstruktion hierfür auch am besten geeignet ist. Die Kombination unterschiedlicher Schutzprinzipien - Ableitung im Hauptverteiler HV und Strombegrenzung auf der Teilnehmerbaugruppe TB - macht den Schutz für Geräte, Anlagen und Personen wirksam und kostengünstig. Auf der Teilnehmerbaugrupoe TB sind weder hohe Spannungen noch hohe Ströme abzuführen.Only low voltages occur at the output terminals a, b of the main distributor HV, which subsequently do not require any special insulation distances. The absorption or reflection of the interference energy associated with the overvoltage takes place for the most part in the main distributor HV, which is also best suited for this due to its mechanical construction. The combination of different protection principles - derivation in the main distributor HV and current limitation on the subscriber module TB - makes protection for devices, systems and people effective and cost-effective. Neither high voltages nor high currents are to be dissipated on the TB participant assembly group.
Der Diodenschutz im elektronischen SLIC sorgt für den notwendigen Relativschutz, d.h. er wird wirksam, wenn die Überspannung die augenblicklich anliegende Batteriespannung übersteigt. Mit der Aufteilung der Schutzorte ist auch eine eindeutig klare Abgrenzung der Schutzeigenschaften und Schutzpegel möglich.The diode protection in the electronic SLIC provides the necessary relative protection, i.e. it takes effect when the overvoltage exceeds the current battery voltage. With the division of the protection locations, a clearly clear demarcation of the protective properties and protection level is possible.
Diese Methode kann auch für die Normierung der Schutzwerte herangezogen werden, was vorteilhaft ist, weil die Schutzaufgaben in verschiedenen Zuständigkeitsbereiche, wie z.B. Betriebsgesellschaften oder Systemhersteller, fallen.This method can also be used for the standardization of the protection values, which is advantageous because the protection tasks in different areas of responsibility, e.g. Operating companies or system manufacturers.
In der Fig. 2 ist das Prinzipschaltbild eines monolitisch aufgebauten Strombegrenzers S1 (S2) angeführt, der in den Längsadern a/a' bzw. b/b' zwischen Hauptverteiler und Teilnehmerbaugruppe angeordnet wird. Der Strombegrenzer S1 (S2) besteht aus zwei Leistungs-MOS-FET T1 und T1', deren Drains schaltungstechnisch zusammengefaßt sind, die also in Reihe und geaeneinander geschaltet angeordnet sind und damit ein gemeinsames Substrat (Drain) besitzen. Zur Einstelluna der Vorspannung für die Strombegrenzung bei Transistsoren vom Enhancement-Typ dienen Vorwiderstände R, R' bzw. Mehrfachdioden M bzw. M'.In Fig. 2 the basic circuit diagram of a monolithically constructed current limiter S1 (S2) is given, which in the Longitudinal wires a / a 'or b / b' is arranged between the main distributor and subscriber module. The current limiter S1 (S2) consists of two power MOSFETs T1 and T1 ', the drains of which are combined in terms of circuitry, which are therefore arranged in series and connected to one another and thus have a common substrate (drain). Series resistors R, R 'and multiple diodes M and M' are used to set the bias voltage for current limiting in enhancement-type transistors.
Anstelle der in der Fig. dargestellten Mehrfachdioden M, M' kann die Spannungsbearenzung auch mit Hilfe von Zenerdioden erfolgen.Instead of the multiple diodes M, M 'shown in the figure, the voltage can also be reduced using Zener diodes.
Vorteilhafter sind Transistoren vom Depletion Typ, die ohne Vorsprung (Gate- und Source verbunden) bereits leitfähig sind. Der Strombegrenzungswert muß dann allerdinas durch die Transistorparameter festgelegt werden.Transistors of the depletion type, which are already conductive without a projection (gate and source connected) are more advantageous. The current limit value then has to be determined by the transistor parameters.
In der Fig. 3 ist die Kennlinie des Strombegrenzerelements gemäß Fig. 2 dargestellt. Wie der Fig. zu entnehmen ist, weist die Kennlinie einen exakten Nulldurchganq auf, was für die gewünschte Strombegrenzerfunktion wesentlich ist.FIG. 3 shows the characteristic curve of the current limiter element according to FIG. 2. As can be seen from the figure, the characteristic curve has an exact zero crossing, which is essential for the desired current limiter function.
In der Fig. 4 ist ein Mehrfachkoppelpunkt mit Schutzfunktion dargestellt, mit dessen Hilfe nicht nur eine Strombegrenzerfunktion im Zweig a/a' erfolgt, sondern der auch weitere Funktionen im BORSCHT-Konzept übernehmen kann. BORSCHT bedeutet Battery Feeding, Over Voltage Protection, Ringing, Signalling, Coding, Hybride (4 Draht-2 Draht-Umsetzung), Testina. Dieser Mehrfachkoppelpunkt weist vier Transistoren T1, T1' , T1", T1''' auf, deren Drains schaltungstechnisch zusammengefaßt sind. An den Koppelpunkten a" bzw. a''' kann z.B. die Rufspannung (R) eingekoppelt oder die Anschaltung von Testeinrichtungen (T) übernommen werden. Zur Erzeugung der erforderlichen positiven Vorspannung, die geeignet ist, einen Stromgrenzwert einzustellen, dienen beim Ausführungsbeispiel gemäß Fig. 4 optoelektronische Koppler 01, 01', 01'', 01'''.4 shows a multiple coupling point with a protective function, with the aid of which not only a current limiter function is carried out in the branch a / a ', but which can also take on further functions in the BORSCHT concept. BORSCHT means Battery Feeding, Over Voltage Protection, Ringing, Signaling, Coding, Hybrid (4 wire-2 wire implementation), Testina. This Mehrfachko p pelpunkt comprises four transistors T1, T1 ', T1 ", T1''', whose drains are summarized circuitry. At the coupling points a" or a '''can, for example, the ringing voltage (R) is couples or the connection of test equipment (T) are taken over. In the exemplary embodiment according to FIG. 4,
Auch der in Fig. 4 dargestellte Baustein kann in monolithisch integrierter Technik ausgeführt werden, wobei ggf. zur Einkopplung weiterer der oben angeführten Funktionen weitere Leistunqs-MOS-FET (T1''''...) mit integriert werden können.The module shown in FIG. 4 can also be implemented using monolithically integrated technology, further power MOS-FETs (T1 '' '' ...) being able to be integrated, if necessary, for coupling in further of the functions mentioned above.
Neben der vorstehend beschriebenen Anwendung der erfindungsgemäßen Schaltungsanordnung in Vermittlungsanlagen kann der Gegenstand der Erfindung auch als automatische Längssicherung in der allgemeinen Gerätetechnik eingesetzt werden. In diesem Falle ist bei Langzeitbelastung ein Wärmesensor einzufügen, der eine Stromkreistrennuna bewirkt.In addition to the above-described application of the circuit arrangement according to the invention in switching systems, the subject of the invention can also be used as an automatic longitudinal fuse in general device technology. In this case, a heat sensor that causes a circuit separation must be inserted during long-term exposure.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT84113450T ATE40773T1 (en) | 1983-11-11 | 1984-11-07 | CIRCUIT ARRANGEMENT FOR DRAINING OVERVOLTAGES. |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3340927 | 1983-11-11 | ||
| DE19833340927 DE3340927A1 (en) | 1983-11-11 | 1983-11-11 | CIRCUIT ARRANGEMENT FOR DERIVATING OVERVOLTAGE |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0142128A1 true EP0142128A1 (en) | 1985-05-22 |
| EP0142128B1 EP0142128B1 (en) | 1989-02-08 |
Family
ID=6214136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP84113450A Expired EP0142128B1 (en) | 1983-11-11 | 1984-11-07 | Circuit arrangement for the drainage of overvoltages |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0142128B1 (en) |
| JP (1) | JPS60118024A (en) |
| AT (1) | ATE40773T1 (en) |
| BR (1) | BR8405721A (en) |
| CA (1) | CA1260535A (en) |
| DE (2) | DE3340927A1 (en) |
| FI (1) | FI81469C (en) |
| ZA (1) | ZA848759B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990013960A1 (en) * | 1989-04-28 | 1990-11-15 | Northern Telecom Limited | Automatically resetting protection arrangement for a telephone subscriber line interface circuit |
| WO1994011936A1 (en) * | 1992-11-12 | 1994-05-26 | Raychem Limited | Switching arrangement |
| US5327319A (en) * | 1991-08-27 | 1994-07-05 | At&T Bell Laboratories | Common mode voltage surge protection circuitry |
| WO1995007570A1 (en) * | 1993-09-08 | 1995-03-16 | Siemens Aktiengesellschaft | Current limiting device |
| EP0684677A1 (en) * | 1993-02-10 | 1995-11-29 | MARUO, Masaya | Overcurrent protective circuit and semiconductor device |
| US6049447A (en) * | 1993-09-08 | 2000-04-11 | Siemens Ag | Current limiting device |
| WO2001001539A1 (en) * | 1999-06-30 | 2001-01-04 | Tyco Electronics Corporation | Line protector for a communications circuit |
| DE202007019202U1 (en) | 2006-09-12 | 2011-06-09 | Tremco Illbruck Productie B.V. | Container, in particular aerosol, for applying a PU foam |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3712572C1 (en) * | 1987-04-14 | 1988-08-04 | Telefonbau & Normalzeit Gmbh | Circuit arrangement for overvoltage protection and call current feed on a connection line for telecommunications, in particular telephone switching systems |
| CA1260171A (en) * | 1987-05-15 | 1989-09-26 | Reinhard W. Rosch | Protection arrangement for a telephone subscriber line interface circuit |
| DE3814661A1 (en) * | 1988-04-29 | 1989-11-09 | Nixdorf Computer Ag | DEVICE FOR SWITCHING THE CALL AC VOLTAGE ON SUBSCRIBER CONNECTION LINES |
| DE4326596C2 (en) * | 1993-08-07 | 1997-07-17 | Sel Alcatel Ag | Protective circuit arrangement for electronic subscriber circuits |
| DE4402461A1 (en) * | 1994-01-28 | 1995-08-03 | Sel Alcatel Ag | Protection circuit for a subscriber line circuit and subscriber line circuit with it |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2079352A1 (en) * | 1970-02-11 | 1971-11-12 | Sybron Corp | |
| DE2435606A1 (en) * | 1974-07-24 | 1976-02-05 | Siemens Ag | Linear integrated impedance with depletion MOSFETs - uses drawn-source series with each FET gate coupled to its drain or source |
| DE2850841A1 (en) * | 1978-02-24 | 1979-08-30 | Int Standard Electric Corp | CIRCUIT ARRANGEMENT FOR AN INTEGRATABLE ELECTRONIC RELAY |
| DE2834894A1 (en) * | 1978-08-09 | 1980-02-21 | Siemens Ag | Two terminal electronic overvoltage protector for telephone line - has diodes blocking currents of one polarity and electronic circuit blocking overcurrent of opposite polarity |
| US4200898A (en) * | 1978-06-19 | 1980-04-29 | The United States Of America As Represented By The Secretary Of The Navy | Current limiter |
| EP0092820A1 (en) * | 1982-04-26 | 1983-11-02 | Siemens Aktiengesellschaft | Circuit arrangement for the overvoltage protection of intersection circuits |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5638931A (en) * | 1979-09-06 | 1981-04-14 | Sony Corp | Overcurrent detector circuit |
-
1983
- 1983-11-11 DE DE19833340927 patent/DE3340927A1/en not_active Withdrawn
-
1984
- 1984-11-07 AT AT84113450T patent/ATE40773T1/en not_active IP Right Cessation
- 1984-11-07 EP EP84113450A patent/EP0142128B1/en not_active Expired
- 1984-11-07 DE DE8484113450T patent/DE3476727D1/en not_active Expired
- 1984-11-08 JP JP59235927A patent/JPS60118024A/en active Granted
- 1984-11-09 FI FI844416A patent/FI81469C/en not_active IP Right Cessation
- 1984-11-09 CA CA000467460A patent/CA1260535A/en not_active Expired
- 1984-11-09 ZA ZA848759A patent/ZA848759B/en unknown
- 1984-11-09 BR BR8405721A patent/BR8405721A/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2079352A1 (en) * | 1970-02-11 | 1971-11-12 | Sybron Corp | |
| DE2435606A1 (en) * | 1974-07-24 | 1976-02-05 | Siemens Ag | Linear integrated impedance with depletion MOSFETs - uses drawn-source series with each FET gate coupled to its drain or source |
| DE2850841A1 (en) * | 1978-02-24 | 1979-08-30 | Int Standard Electric Corp | CIRCUIT ARRANGEMENT FOR AN INTEGRATABLE ELECTRONIC RELAY |
| US4200898A (en) * | 1978-06-19 | 1980-04-29 | The United States Of America As Represented By The Secretary Of The Navy | Current limiter |
| DE2834894A1 (en) * | 1978-08-09 | 1980-02-21 | Siemens Ag | Two terminal electronic overvoltage protector for telephone line - has diodes blocking currents of one polarity and electronic circuit blocking overcurrent of opposite polarity |
| EP0092820A1 (en) * | 1982-04-26 | 1983-11-02 | Siemens Aktiengesellschaft | Circuit arrangement for the overvoltage protection of intersection circuits |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5146384A (en) * | 1989-04-28 | 1992-09-08 | Northern Telecom Limited | Automatically resetting protection arrangement for a telephone subscriber line interface circuit |
| WO1990013960A1 (en) * | 1989-04-28 | 1990-11-15 | Northern Telecom Limited | Automatically resetting protection arrangement for a telephone subscriber line interface circuit |
| US5327319A (en) * | 1991-08-27 | 1994-07-05 | At&T Bell Laboratories | Common mode voltage surge protection circuitry |
| TR28861A (en) * | 1992-11-12 | 1997-07-28 | Raychem Ltd | A device for connection in an electrical circuit. |
| WO1994011936A1 (en) * | 1992-11-12 | 1994-05-26 | Raychem Limited | Switching arrangement |
| EP0684677A1 (en) * | 1993-02-10 | 1995-11-29 | MARUO, Masaya | Overcurrent protective circuit and semiconductor device |
| EP0684677B1 (en) * | 1993-02-10 | 2003-12-17 | Line Electronics Corporation | Overcurrent protective circuit and semiconductor device |
| WO1995007570A1 (en) * | 1993-09-08 | 1995-03-16 | Siemens Aktiengesellschaft | Current limiting device |
| AU688738B2 (en) * | 1993-09-08 | 1998-03-19 | Siemens Aktiengesellschaft | Current limiting device |
| US5999387A (en) * | 1993-09-08 | 1999-12-07 | Siemens Aktiengesellschaft | Current limiting device |
| US6049447A (en) * | 1993-09-08 | 2000-04-11 | Siemens Ag | Current limiting device |
| WO2001001539A1 (en) * | 1999-06-30 | 2001-01-04 | Tyco Electronics Corporation | Line protector for a communications circuit |
| DE202007019202U1 (en) | 2006-09-12 | 2011-06-09 | Tremco Illbruck Productie B.V. | Container, in particular aerosol, for applying a PU foam |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60118024A (en) | 1985-06-25 |
| JPH0586129B2 (en) | 1993-12-10 |
| FI844416L (en) | 1985-05-12 |
| FI844416A0 (en) | 1984-11-09 |
| DE3476727D1 (en) | 1989-03-16 |
| BR8405721A (en) | 1985-09-10 |
| ZA848759B (en) | 1985-07-31 |
| ATE40773T1 (en) | 1989-02-15 |
| CA1260535A (en) | 1989-09-26 |
| FI81469C (en) | 1990-10-10 |
| EP0142128B1 (en) | 1989-02-08 |
| FI81469B (en) | 1990-06-29 |
| DE3340927A1 (en) | 1985-05-23 |
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