EP0126686A1 - Optical waveguide employing a diffraction grating - Google Patents

Optical waveguide employing a diffraction grating Download PDF

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Publication number
EP0126686A1
EP0126686A1 EP84400985A EP84400985A EP0126686A1 EP 0126686 A1 EP0126686 A1 EP 0126686A1 EP 84400985 A EP84400985 A EP 84400985A EP 84400985 A EP84400985 A EP 84400985A EP 0126686 A1 EP0126686 A1 EP 0126686A1
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EP
European Patent Office
Prior art keywords
guide
network
guides
directions
diffraction
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Granted
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EP84400985A
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German (de)
French (fr)
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EP0126686B1 (en
Inventor
Alfredo Yi-Yan
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YI YAN ALFREDO
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YI YAN ALFREDO
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/28Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2848Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers having refractive means, e.g. imaging elements between light guides as splitting, branching and/or combining devices, e.g. lenses, holograms
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/124Geodesic lenses or integrated gratings
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/134Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
    • G02B6/1345Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/295Analog deflection from or in an optical waveguide structure]
    • G02F1/2955Analog deflection from or in an optical waveguide structure] by controlled diffraction or phased-array beam steering

Definitions

  • the present invention relates to an optical guide structure. It finds an application in integrated optics.
  • the structure of the invention is similar to a device known as a "Y junction" which is shown diagrammatically in FIG. 1.
  • a device comprises an optical input waveguide 10, of direction De, extended by two guides of output 11 and 12, of directions Ds 1 , D s 2 inclined respectively by + a and - ⁇ relative to the direction De of the input guide.
  • the structure also includes a flared zone 13 forming the junction between the inlet guide and the outlet guides. An optical beam entering the junction through the inlet guide is divided into two beams which propagate in the two outlet guides.
  • Such a junction finds numerous applications in integrated optics, in particular in the production of so-called Mach-Zehnder modulators.
  • the phenomenon is as follows.
  • the input guide 10 and the output guides 11 and 12 are designed to operate in single mode. This means that, for the operating wavelength used, the width and the thickness of the guides are such that only the fundamental propagation mode can be established. At a given thickness, the tolerance on the width of the guide is very small and if this width is excessive, higher order modes will be able to propagate. This is precisely what happens in zone II of the device where the junction 13 has a flared shape whose width is constantly increasing between plane A and plane B. The condition for maintaining the lowest mode is therefore no longer respected in this area and higher order modes may appear.
  • Another phenomenon combines with the previous one to amplify this mode conversion: it is the diffraction of light in plane A.
  • the guide presents a discontinuity.
  • the propagation vector directed according to De in zone I will present, in the plane A, an angular dispersion so that, after A, the propagation vector will no longer be directed along De in the entire plane of cross section. On the edges, this vector will be directed obliquely.
  • the second difficulty encountered in junctions of this kind is the appearance of radiation in the angle C.
  • the quasi-spherical front of the wave which propagates from plane A towards plane B, in region II, collides edge C where a diffraction wave is formed having said edge at its center.
  • This wave radiates throughout the device, including towards the entry guide. Only a small part of this diffracted wave satisfies the conditions allowing its propagation in the outlet guides; the rest are released and lost.
  • the last difficulty concerns the proximity of the exit guides in region III.
  • This proximity has the effect of coupling the guides to each other, which causes (as in a directional coupler where this effect is used) the transfer of energy from one guide to the other.
  • This transfer presents a quasi-periodicity when one moves away from the plane B.
  • This effect is all the more marked when the value of the angular opening (2a) is lower.
  • this angle is necessarily small (less than a few degrees) if we want to obtain a good transfer energy from the inlet guide to the outlet guides. This coupling is therefore important.
  • the object of the invention is precisely to overcome all these difficulties.
  • This object is achieved thanks to the use of a diffraction grating arranged between the entry guide and the junction, this grating having a pitch which defines only two diffraction directions of orders different from zero, +1 and - respectively 1, this step being also chosen so that these two diffraction directions coincide with the directions of the two outlet guides.
  • the structure comprises a third single-mode output guide, located between the first two and having the same direction as that of the input guide, this third guide corresponding to the order O of diffraction.
  • the structure of the invention comprises a single-mode input guide 20, of direction De, two symmetrical single-mode output guides 21 and 22, of directions Ds 1 and D S 2 inclined by +9 and -9 relative to the direction De, and a third outlet guide 23, located in the extension of the inlet guide, that is to say having a direction Ds 3 coincides with the direction De.
  • the junction between the guide entry and exit guides is via a flared area 25.
  • the structure also includes a diffraction grating 24, located at the end of the guide 20 and at the entrance to junction 25. This grating has a pitch p.
  • a network is used for which only the +1 and -1 orders exist, excluding orders greater than 1. This condition is achieved by making the quantity ⁇ np at least equal to 0, 5. Indeed, for such a value, everything order m greater than 1 will lead to a quantity greater than 1, for which there is no real value for the angle ⁇ .
  • the pitch will be of the order of a micron.
  • an incident beam passing through the input guide 20 gives rise, after crossing the network 24, to three beams and only three: a +1 order beam passing through the guide 21, an order beam -1 borrowing the guide 22, and a beam of order 0 borrowing the guide 23.
  • the energy diffracted by a network in the ⁇ 1 orders is proportional to (x) where J 1 is the Bessel function of order 1 and where x is a parameter depending on the length L of the network.
  • J 1 is the Bessel function of order 1
  • x is a parameter depending on the length L of the network.
  • the parameter x is equal to .
  • the energy corresponding to order 0 is proportional to (x) where J O is the Bessel function of order 0. According to the values which one gives to the length L of the network, therefore with the parameter x, one can distribute the proportion of energy in the guides within certain limits .
  • Figures 4 and 5 schematically show the layout of the network in the case of an index network ( Figure 4) and in that of a ripple network, also called corrugation ( Figure 5).
  • the index network (FIG. 4) is formed by slices of indices n, and n 2 which alternate periodically.
  • the variations in index can be obtained by diffusion as will be seen below.
  • the wavy network (FIG. 5) comprises a corrugated structure 72 which has the effect of periodically varying the effective thickness of the optical guide 40.
  • the effective thickness of a wave guide is equal to the sum of three terms: the geometric thickness of the guide, the depth at which, in the substrate, the amplitude of the guided wave falls to 1 / e of its value and the distance at which, in the superstrate, the amplitude of l guided wave drops to 1 / e of its value.
  • the effective thickness of the guide therefore also varies periodically. This periodicity in the propagation conditions creates the diffraction grating.
  • the advantages of the invention are clear. Thanks to the presence of the diffraction grating, the wave vector of the incident radiation, vector which dictates the propagation of the wave, is modified into wave vectors adapted to the directions of the output guides. Optimization of energy transfer is thus obtained, which was not the case in the prior art. Therefore, the diffraction losses in the corners D and E are reduced.
  • the network used has a low resolution in wavelength, because it includes a small number of "lines". Indeed, as has been explained above, the pitch of the grating is of the order of a micrometer, while the width of the waveguide is of the order of 8 to 10 ⁇ m. The network therefore does not include more than a dozen lines.
  • the low resolution which results therefrom means that the energy of a high order mode, as it results from the conversion phenomenon mentioned above, will be diffracted towards the two guides 21 and 22 with a very small angular deviation with respect to in the fundamental mode. In this way, the losses due to the mode conversion are reduced compared to the prior art.
  • the angular opening 28 can be large (for example several tens of degrees), which considerably reduces the coupling phenomena between outlet guides. The drawbacks mentioned above are therefore well avoided.
  • the structure which has just been described may consist of materials with a high electro-optical coefficient (LiNbO 3 , InP, GaAs, etc.). One can then have the electrodes in the vicinity of the junction, to obtain a modulation of the light.
  • the phenomenon implemented is a little different from that of conventional modulators. It can be explained with the help of FIG. 3, already described and of FIG. 6 which represents a network of index 24 inserted between two electrodes 30, 31 the first is connected to ground and the second is brought to a voltage V adjustable.
  • the electric field applied to the electro-optical material constituting the network modifies the indices n I and n 2 of the different zones of the network, therefore the difference An, and consequently the parameter x mentioned above.
  • FIGS 7 to 10 show some possible manufacturing process steps.
  • a layer 41 of doping material (FIG. A) is then deposited on a substrate 40, then a layer 42 of photoresist (FIG. B) which is exposed (FIG. C) through a mask 43 pierced openings 44. After development, there remain strips 45 of resin separating openings 46 (FIG. d). Through these openings a chemical or ionic attack on layer 41 is carried out. Then we remove the strips of resin 45, which leaves sub sister strips of dopant 47 on the substrate 40 ( Figure e).
  • FIG. F Another method which leads to the same result consists in depositing on the substrate 40 a layer 51 of photoresist (FIG. F), to expose this layer through a mask 52 pierced with openings 53 (FIG. G). After development, there remain strips 54 of resin (FIG. H). Next, a metal layer 55 is deposited (FIG. I) then, by removal ("lift-off"), the parts of this metal layer which cover the strips of resin are made to disappear. The pattern in Figure e is then obtained.
  • the strips 47 then consist of a doping material, which diffuses into the substrate 40. This diffusion is essentially transverse but also has a side part. This distribution is shown schematically by the arrows in Figure a. After diffusion, a guide layer 50 of continuous doping is obtained as illustrated in FIG. B.
  • an ion exchange process can be used, as indicated in FIG. 9.
  • the zones 47 are then formed by a mask which covers the substrate.
  • this structure is the site of an ion exchange.
  • Na + ions (56) from the glass substrate are exchanged with Ag ++ ions (58) from the solution.
  • This exchange is preferably carried out in a transverse direction, but also in a lateral direction (arrows in part a).
  • the mask 47 is removed.
  • the guide layer 60 finally obtained is still time and is represented on part b.
  • EDe is similar to that of FIG. 8b, except that the effect obtained is now maximum with regard to the openings of the mask whereas, in the previous case, the diffusion was minimum .
  • the guide layer (50 or 60), on its substrate 40 sees its index vary periodically.
  • Figure 10 illustrates a final manufacturing process.
  • a layer 66 of photoresist is deposited (FIG. B). This is exposed by two coherent rays 67 and 68 which interfere with the photoresist (figure c). The interference fringes thus obtained make it possible, after development, to obtain a layer of photoresist 70 of periodic thickness (FIG. D).
  • a layer of photoresist 70 of periodic thickness FIG. D
  • an undulating guide layer 72 is obtained overlying the substrate 40.

Abstract

Cette structure comprend un guide d'entrée monomode (20) et deux guides de sortie (21, 22). La structure de l'invention est caractérisée en ce qu'elle comprend en outre un réseau de diffraction (24) disposé à la jonction entre le guide d'entrée et les trois guides de sortie, ce réseau ayant un pas qui définit seulement deux directions de diffraction d'ordre +1 et -1 qui coïncident avec les directions des deux guides de sortie. La direction d'ordre 0 coïncide avec un troisième guide de sortie. Application en optique intégrée.This structure includes a single mode input guide (20) and two output guides (21, 22). The structure of the invention is characterized in that it further comprises a diffraction grating (24) disposed at the junction between the inlet guide and the three outlet guides, this grating having a pitch which defines only two directions diffraction of order +1 and -1 which coincide with the directions of the two output guides. The direction of order 0 coincides with a third exit guide. Application in integrated optics.

Description

La présente invention a pour objet une structure de guidage optique. Elle trouve une application en optique intégrée.The present invention relates to an optical guide structure. It finds an application in integrated optics.

La structure de l'invention s'apparente à un dispositif dit à "jonction Y" qui est représenté schématiquement sur la figure 1. Un tel dispositif comprend un guide d'onde optique d'entrée 10, de direction De, prolongé par deux guides de sortie 11 et 12, de directions Ds1, Ds2 inclinées respectivement de +a et -α par rapport à la direction De du guide d'entrée. La structure comprend encore une zone 13 évasée formant la jonction entre le guide d'entrée-et les guides de sortie. Un faisceau optique pénétrant dans la jonction par le guide d'entrée se divise en deux faisceaux qui se propagent dans les deux guides de sortie.The structure of the invention is similar to a device known as a "Y junction" which is shown diagrammatically in FIG. 1. Such a device comprises an optical input waveguide 10, of direction De, extended by two guides of output 11 and 12, of directions Ds 1 , D s 2 inclined respectively by + a and -α relative to the direction De of the input guide. The structure also includes a flared zone 13 forming the junction between the inlet guide and the outlet guides. An optical beam entering the junction through the inlet guide is divided into two beams which propagate in the two outlet guides.

Pour pouvoir mieux préciser les phénomènes rencontrés dans une telle structure, on considèrera, par la suite, deux plans A et B perpendiculaires à la direction De, ces plans délimitant une zone I à gauche de A, qui est celle du guide d'entrée, une zone II, entre A et B, qui est celle de la jonction proprement dite, et une zone III, à droite de B, qui est celle des guides de sortie. Par ailleurs, on notera C l'arête où se rejoignent les deux guides de sortie.To be able to better specify the phenomena encountered in such a structure, we will consider, subsequently, two planes A and B perpendicular to the direction De, these planes delimiting an area I to the left of A, which is that of the entry guide, zone II, between A and B, which is that of the junction proper, and zone III, to the right of B, which is that of the outlet guides. In addition, one will note C the edge where the two exit guides meet.

Une telle jonction trouve de nombreuses applications en optique intégrée, notamment dans la réalisation de modulateurs dits de Mach-Zehnder.Such a junction finds numerous applications in integrated optics, in particular in the production of so-called Mach-Zehnder modulators.

Les propriétés de ces dispositifs sont décrites, par exemple, dans l'article de ANDERSON I. intitulé "Transmission performance of Y-junctions in planar dielectric waveguides", publié dans la revue "IEE Proceedings on Microwaves Optics and Acoustics", 2, 1 pages 7-12 de Janvier 1978, ainsi que dans l'article de BAETS R. et LAGASSE P.E., intitulé "Calcula- tion of Radiation Loss in Integrated Optics Tapers and Y-junctions" publié dans la revue Applied Optics 21, 11, pages 1972-1978 de Juin 1982.The properties of these devices are described, for example, in the article by ANDERSON I. entitled "Transmission performance of Y-junctions in planar dielectric waveguides", published in the review "IEE Proceedings on Microwaves Optics and Acoustics", 2, 1 pages 7-12 of January 1978, as well as in the ar BAETS R. and LAGASSE PE, titled "Calculation of Radiation Loss in Integrated Optics Tapers and Y-junctions" published in the journal Applied Optics 21, 11, pages 1972-1978 of June 1982.

Ce genre de dispositif soulève trois types de difficultés qu'il faut bien comprendre pour saisir l'intérêt de l'invention qui va être décrite. Il s'agit :

  • a) de la conversion de mode dans la région de la jonction (région II),
  • b) de l'apparition d'un rayonnement dans l'angle de la jonction (zone C),
  • c) du couplage entre les deux guides de sortie (région III).
This type of device raises three types of difficulty which must be understood in order to grasp the interest of the invention which will be described. It's about :
  • a) mode conversion in the region of the junction (region II),
  • b) the appearance of radiation in the angle of the junction (zone C),
  • c) coupling between the two outlet guides (region III).

En ce qui concerne la conversion de mode, le phénomène est le suivant. Le guide d'entrée 10 et les guides de sortie 11 et 12 sont conçus pour fonctionner en monomode. Cela signifie que, pour la longueur d'onde de fonctionnement utilisée, la largeur et l'épaisseur des guides sont telles que seul le mode de propagation fondamental peut s'établir. A épaisseur donnée, la tolérance sur la largeur du guide est très faible et si cette largeur est excessive, des modes d'ordre supérieur vont pouvoir se propager. C'est précisément ce qui se passe dans la zone II du dispositif où la jonction 13 présente une forme évasée dont la largeur croît constamment entre le plan A et le plan B. La condition de maintien du mode le plus bas n'est donc plus respectée dans cette zone et des modes d'ordre supérieur peuvent apparaître. Un autre phénomène se combine au précédent pour amplifier cette conversion de mode : c'est la diffraction de la lumière dans le plan A. En effet, dans ce plan, le guide présente une discontinuité. Le vecteur de propagation dirigé selon De dans la zone I, va présenter, dans le plan A, une dispersion angulaire de sorte que, après A, le vecteur de propagation ne sera plus dirigé selon De dans la totalité du plan de section droite. Sur les bords, ce vecteur sera dirigé obliquement.Regarding mode conversion, the phenomenon is as follows. The input guide 10 and the output guides 11 and 12 are designed to operate in single mode. This means that, for the operating wavelength used, the width and the thickness of the guides are such that only the fundamental propagation mode can be established. At a given thickness, the tolerance on the width of the guide is very small and if this width is excessive, higher order modes will be able to propagate. This is precisely what happens in zone II of the device where the junction 13 has a flared shape whose width is constantly increasing between plane A and plane B. The condition for maintaining the lowest mode is therefore no longer respected in this area and higher order modes may appear. Another phenomenon combines with the previous one to amplify this mode conversion: it is the diffraction of light in plane A. Indeed, in this plane, the guide presents a discontinuity. The propagation vector directed according to De in zone I, will present, in the plane A, an angular dispersion so that, after A, the propagation vector will no longer be directed along De in the entire plane of cross section. On the edges, this vector will be directed obliquely.

Ces deux phénomènes se conjuguent pour rompre le caractère monomode de la structure et provoquer la conversion de mode. Comme les guides de sortie 11 et 12 sont, par construction, monomodes il y aura incompatibilité entre le front de l'onde multimode qui atteint ces guides dans le plan B et le front de l'onde monomode apte à se propager dans les deux guides de sortie. Une partie de l'énergie lumineuse d'entrée se trouvera alors dispersée dans la région du plan B.These two phenomena combine to break the monomode character of the structure and cause the mode conversion. As the output guides 11 and 12 are, by construction, single-mode there will be incompatibility between the front of the multimode wave which reaches these guides in the plane B and the front of the single-mode wave capable of propagating in the two guides Release. Part of the input light energy will then be dispersed in the region of plane B.

La seconde difficulté rencontrée dans les jonctions de ce genre est l'apparition d'un rayonnement dans l'angle C. Le front quasi-sphérique de l'onde qui se propage du plan A vers le plan B, dans la région II, heurte l'arête C où se forme une onde de diffraction ayant pour centre ladite arête. Cette onde rayonne dans tout le dispositif, y compris vers le guide d'entrée. Seule une faible partie de cette onde diffractée satisfait aux conditions permettant sa propagation dans les guides de sortie ; le reste est diffusé et perdu.The second difficulty encountered in junctions of this kind is the appearance of radiation in the angle C. The quasi-spherical front of the wave which propagates from plane A towards plane B, in region II, collides edge C where a diffraction wave is formed having said edge at its center. This wave radiates throughout the device, including towards the entry guide. Only a small part of this diffracted wave satisfies the conditions allowing its propagation in the outlet guides; the rest are released and lost.

La dernière difficulté concerne la proximité des guides de sortie dans la région III. Cette proximité a pour effet de coupler les guides l'un à l'autre, ce qui entraîne (comme dans un coupleur directif où cet effet est utilisé) le transfert de l'énergie d'un guide à l'autre. Ce transfert présente une quasi- périodicité lorsqu'on s'éloigne du plan B. Cet effet est d'autant plus marqué que la valeur de l'ouverture angulaire (2a) est plus faible. Or, dans les jonctions Y, cet angle est nécessairement faible (inférieur à quelques degrés) si l'on veut obtenir un bon transfert d'énergie du guide d'entrée vers les guides de sortie. Ce couplage est donc important.The last difficulty concerns the proximity of the exit guides in region III. This proximity has the effect of coupling the guides to each other, which causes (as in a directional coupler where this effect is used) the transfer of energy from one guide to the other. This transfer presents a quasi-periodicity when one moves away from the plane B. This effect is all the more marked when the value of the angular opening (2a) is lower. However, in the Y junctions, this angle is necessarily small (less than a few degrees) if we want to obtain a good transfer energy from the inlet guide to the outlet guides. This coupling is therefore important.

Le but de l'invention est justement de surmonter toutes ces difficultés. Ce but est atteint grâce à l'utilisation d'un réseau de diffraction disposé entre le guide d'entrée et la jonction, ce réseau ayant un pas qui définit seulement deux directions de diffraction d'ordres différents de zéro, respectivement +1 et -1, ce pas étant en outre choisi pour que ces deux directions de diffraction coincident avec les directions des deux guides de sortie.The object of the invention is precisely to overcome all these difficulties. This object is achieved thanks to the use of a diffraction grating arranged between the entry guide and the junction, this grating having a pitch which defines only two diffraction directions of orders different from zero, +1 and - respectively 1, this step being also chosen so that these two diffraction directions coincide with the directions of the two outlet guides.

Selon une variante privilégiée, la structure comprend un troisième guide de sortie monomode, situé entre les deux premiers et ayant même direction que celle du guide d'entrée, ce troisième guide correspondant à l'ordre O de diffraction.According to a preferred variant, the structure comprises a third single-mode output guide, located between the first two and having the same direction as that of the input guide, this third guide corresponding to the order O of diffraction.

Les caractéristiques de l'invention apparaîtront mieux après la description qui suit, d'un exemple de réalisation donné à titre explicatif et nullement limitatif. Cette description se réfère à des dessins annexés sur lesquels :

  • - la figure 1, déjà décrite, représente une jonction Y selon l'art antérieur,
  • - la figure 2 illustre un exemple de réalisation d'une structure de guidage conforme à l'invention,
  • - la figure 3 représente la répartition énergétique dans les modes d'ordre O et 1,
  • - la figure 4 représente schématiquement une coupe de la structure utilisant un réseau d'indice,
  • - la figure 5 représente schématiquement une coupe de la structure utilisant un réseau à ondulation,
  • - la figure 6 représente une variante dans laquelle on effectue une modulation électrooptique,
  • - la figure 7 illustre les différentes étapes d'un procédé de fabrication d'un motif permettant la réalisation d'un réseau,
  • - la figure 8 illustre le mécanisme de diffusion (a) et le profil de diffusion obtenu (b),
  • - la figure 9 illustre le mécanisme d'échange ionique (a) et le profil obtenu (b),
  • - la figure 10 montre les différentes étapes d'un procédé d'obtention d'un guide à réseau par interférométrie.
The characteristics of the invention will appear better after the description which follows, of an exemplary embodiment given by way of explanation and in no way limiting. This description refers to attached drawings in which:
  • FIG. 1, already described, represents a Y junction according to the prior art,
  • FIG. 2 illustrates an exemplary embodiment of a guide structure according to the invention,
  • FIG. 3 represents the energy distribution in the modes of order O and 1,
  • FIG. 4 schematically represents a section of the structure using an index network,
  • FIG. 5 schematically represents a section of the structure using a corrugated network,
  • FIG. 6 represents a variant in which electro-optical modulation is carried out,
  • FIG. 7 illustrates the different stages of a method of manufacturing a pattern allowing the creation of a network,
  • FIG. 8 illustrates the diffusion mechanism (a) and the diffusion profile obtained (b),
  • FIG. 9 illustrates the ion exchange mechanism (a) and the profile obtained (b),
  • - Figure 10 shows the different steps of a method of obtaining a network guide by interferometry.

Telle que représentée sur la figure 2, la structure de l'invention comprend un guide d'entrée monomode 20, de direction De, deux guides de sortie monomodes symétriques 21 et 22, de directions Ds1 et DS2 inclinées de +9 et -9 par rapport à la direction De, et un troisième guide de sortie 23, situé dans le prolongement du guide d'entrée, c'est-à-dire ayant une direction Ds3 confondue avec la direction De. La jonction entre le guide d'entrée et les guides de sortie s'effectue par une zone évasée 25. La structure comprend encore un réseau de diffraction 24, situé à l'extrémité du guide 20 et à l'entrée de la jonction 25. Ce réseau possède un pas p.As shown in FIG. 2, the structure of the invention comprises a single-mode input guide 20, of direction De, two symmetrical single-mode output guides 21 and 22, of directions Ds 1 and D S 2 inclined by +9 and -9 relative to the direction De, and a third outlet guide 23, located in the extension of the inlet guide, that is to say having a direction Ds 3 coincides with the direction De. The junction between the guide entry and exit guides is via a flared area 25. The structure also includes a diffraction grating 24, located at the end of the guide 20 and at the entrance to junction 25. This grating has a pitch p.

On sait, de manière générale, que lorsqu'un réseau de pas p est traversé par un rayonnement optique de longueur d'onde λ, il apparaît des faisceaux diffractés de divers ordres m (m entier positif ou négatif) dans des directions ϕ définies par :
sin ϕ =

Figure imgb0001

n étant l'indice de réfraction du matériau.It is generally known that when an array of steps p is crossed by an optical radiation of wavelength λ, there appear diffracted beams of various orders m (m positive or negative integer) in directions ϕ defined by :
sin ϕ =
Figure imgb0001

n being the refractive index of the material.

Dans le cas de l'invention, on utilise un réseau pour lequel seuls les ordres +1 et -1 existent, à l'exclusion des ordres supérieurs à 1. Cette condition est réalisée en rendant la quantité λ np au moins égale à 0,5. En effet, pour une telle valeur, tout ordre m supérieur à 1 conduira à une quantité

Figure imgb0002
supé- rieure à 1, pour laquelle il n'existe pas de valeur réelle de l'angle ϕ.In the case of the invention, a network is used for which only the +1 and -1 orders exist, excluding orders greater than 1. This condition is achieved by making the quantity λ np at least equal to 0, 5. Indeed, for such a value, everything order m greater than 1 will lead to a quantity
Figure imgb0002
greater than 1, for which there is no real value for the angle ϕ.

Pour une longueur d'onde donnée, on choisira donc un pas p inférieur à

Figure imgb0003
; pour À = 1,55µm et n=3.3 par exemple, le pas sera de l'ordre du micron.For a given wavelength, we will therefore choose a step p less than
Figure imgb0003
; for À = 1.55µm and n = 3.3 for example, the pitch will be of the order of a micron.

Les directions des faisceaux d'ordre +1 et -1 font alors des angles + ϕ et - ϕ avec la normale, l'angle ϕ étant défini par :
sin ϕ =

Figure imgb0004
.The directions of the beams of order +1 and -1 then make angles + ϕ and - ϕ with the normal, the angle ϕ being defined by:
sin ϕ =
Figure imgb0004
.

L'angle θ des directions Ds1 et DS2 avec la direction De et le pas p du réseau sont alors choisis pour que ϕ soit égal à θ. Quant au faisceau d'ordre 0, sa direction est celle du faisceau incident.The angle θ of the directions Ds 1 and DS 2 with the direction De and the pitch p of the network are then chosen so that ϕ is equal to θ. As for the beam of order 0, its direction is that of the incident beam.

En d'autres termes, un faisceau incident empruntant le guide d'entrée 20 donne naissance, après traversée du réseau 24, à trois faisceaux et à trois seulement : un faisceau d'ordre +1 empruntant le guide 21, un faisceau d'ordre -1 empruntant le guide 22, et un faisceau d'ordre 0 empruntant le guide 23.In other words, an incident beam passing through the input guide 20 gives rise, after crossing the network 24, to three beams and only three: a +1 order beam passing through the guide 21, an order beam -1 borrowing the guide 22, and a beam of order 0 borrowing the guide 23.

En ce qui concerne la répartition énergétique dans les différents guides de sortie, on observera que, de manière classique, l'énergie diffractée par un réseau dans les ordres ± 1 est proportionnelle à

Figure imgb0005
(x) où J1 est la fonction de Bessel d'ordre 1 et où x est un paramètre fonction de la longueur L du réseau. Pour un réseau d'indice, où l'indice varie périodiquement d'une quantité An, le paramètre x est égal à
Figure imgb0006
. L'énergie correspondant à l'ordre 0 est, elle, proportionnelle à
Figure imgb0007
(x) où JO est la fonction de Bessel d'ordre 0. Selon les valeurs que l'on donne à la longueur L du réseau, donc au paramètre x, on peut répartir la proportion d'énergie dans les guides dans certaines limites.With regard to the energy distribution in the different output guides, it will be observed that, conventionally, the energy diffracted by a network in the ± 1 orders is proportional to
Figure imgb0005
(x) where J 1 is the Bessel function of order 1 and where x is a parameter depending on the length L of the network. For an index network, where the index varies periodically by an amount An, the parameter x is equal to
Figure imgb0006
. The energy corresponding to order 0 is proportional to
Figure imgb0007
(x) where J O is the Bessel function of order 0. According to the values which one gives to the length L of the network, therefore with the parameter x, one can distribute the proportion of energy in the guides within certain limits .

Cette question peut être précisée à l'aide de la figure 3 où sont tracées schématiquement les deux courbes

Figure imgb0008
(x) et
Figure imgb0009
(x). Le point de fonctionnement M correspond à un maximum d'énergie dans les ordres ±1, l'énergie dans le mode 0 n'étant toutefois pas nulle. Le point N correspond à une égalité d'énergie dans les trois modes. Le point P, pour lequel J'(x) = 0, correspond à l'absence d'énergie dans l'ordre 0, auquel cas on peut se passer du troisième guide 23, l'énergie diffractée étant uniquement concentrée dans les deux guides 21 et 22. Mais en général, on utilisera ce troisième guide, qui peut servir à des fins diverses, par exemple à une détection, à une contre réaction, etc...This question can be clarified using in Figure 3 where the two curves are schematically drawn
Figure imgb0008
(x) and
Figure imgb0009
(x). The operating point M corresponds to a maximum of energy in the ± 1 orders, the energy in mode 0 however not being zero. The point N corresponds to an energy equality in the three modes. The point P, for which J '(x) = 0, corresponds to the absence of energy in order 0, in which case we can do without the third guide 23, the diffracted energy being only concentrated in the two guides 21 and 22. But in general, we will use this third guide, which can be used for various purposes, for example for detection, feedback, etc ...

Les figures 4 et 5 montrent schématiquement la disposition du réseau dans le cas d'un réseau d'indice (figure 4) et dans celui d'un réseau par ondulation, dit encore par corrugation (figure 5).Figures 4 and 5 schematically show the layout of the network in the case of an index network (Figure 4) and in that of a ripple network, also called corrugation (Figure 5).

Le réseau d'indice (figure 4) est formé de tranches d'indices n, et n2 qui alternent périodiquement. Les variations d'indice peuvent être obtenues par diffusion comme on le verra plus loin.The index network (FIG. 4) is formed by slices of indices n, and n 2 which alternate periodically. The variations in index can be obtained by diffusion as will be seen below.

Le réseau à ondulation (figure 5) comprend une structure ondulée 72 qui a pour effet de faire varier périodiquement l'épaisseur effective du guide optique 40. On sait que l'épaisseur effective d'un guide d'onde est égale à la somme de trois termes : l'épaisseur géométrique du guide, la profondeur à laquelle, dans le substrat, l'amplitude de l'onde guidée tombe à 1/e de sa valeur et la distance à laquelle, dans le superstrat, l'amplitude de l'onde guidée tombe à 1/e de sa valeur. Avec une structure telle que celle de la figure 5, où l'épaisseur du guide optique varie périodiquement, l'épaisseur effective du guide varie donc elle aussi périodiquement. Cette périodicité dans les conditions de propagation crée le réseau de diffraction.The wavy network (FIG. 5) comprises a corrugated structure 72 which has the effect of periodically varying the effective thickness of the optical guide 40. It is known that the effective thickness of a wave guide is equal to the sum of three terms: the geometric thickness of the guide, the depth at which, in the substrate, the amplitude of the guided wave falls to 1 / e of its value and the distance at which, in the superstrate, the amplitude of l guided wave drops to 1 / e of its value. With a structure such as that of FIG. 5, where the thickness of the optical guide varies periodically, the effective thickness of the guide therefore also varies periodically. This periodicity in the propagation conditions creates the diffraction grating.

Dans un réseau à ondulation, l'effet de celle-ci est limité à la zone du guide située à proximité de la surface corruguée et ne s'étend pas à la totalité du guide. Dans un réseau d'indice (figure 4) les zones d'indices différents peuvent affecter la totalité du guide. Il en résulte que l'efficacité d'un réseau corrugué est en général plus faible que celle d'un réseau d'indice. On compensera cette faiblesse en donnant au réseau une longueur plus grande.In a ripple network, its effect is limited to the region of the guide located near the corrugated surface and does not extend to the entire guide. In an index network (Figure 4), zones with different indices can affect the entire guide. As a result, the efficiency of a corrugated network is generally lower than that of an index network. This weakness will be compensated for by giving the network a greater length.

Les avantages de l'invention sont clairs. Grâce à la présence du réseau de diffraction, le vecteur d'onde du rayonnement incident, vecteur qui dicte la propagation de l'onde, se trouve modifié en vecteurs d'onde adaptés aux directions des guides de sortie. L'optimisation du transfert d'énergie est ainsi obtenue, ce qui n'était pas le cas dans l'art antérieur. De ce fait, les pertes par diffraction dans les coins D et E sont réduites.The advantages of the invention are clear. Thanks to the presence of the diffraction grating, the wave vector of the incident radiation, vector which dictates the propagation of the wave, is modified into wave vectors adapted to the directions of the output guides. Optimization of energy transfer is thus obtained, which was not the case in the prior art. Therefore, the diffraction losses in the corners D and E are reduced.

En ce qui concerne le phénomène de conversion de mode, on peut observer ceci. Le réseau utilisé a une faible résolution en longueur d'onde, parce qu'il comprend un faible nombre de "traits". En effet, comme il a été exposé plus haut, le pas du réseau est de l'ordre du micromètre, alors que la largeur du guide d'onde est de l'ordre de 8 à 10 llm. Le réseau ne comprend donc pas plus d'une dizaine de traits. La faible résolution qui en découle entraîne que l'énergie d'un mode d'ordre élevé, tel qu'il résulte du phénomène de conversion évoqué plus haut, sera diffractée vers les deux guides 21 et 22 avec un très faible écart angulaire par rapport au mode fondamental. De cette manière, les pertes dues à la conversion de mode se trouvent réduites par rapport à l'art antérieur.Regarding the mode conversion phenomenon, we can observe this. The network used has a low resolution in wavelength, because it includes a small number of "lines". Indeed, as has been explained above, the pitch of the grating is of the order of a micrometer, while the width of the waveguide is of the order of 8 to 10 μm. The network therefore does not include more than a dozen lines. The low resolution which results therefrom means that the energy of a high order mode, as it results from the conversion phenomenon mentioned above, will be diffracted towards the two guides 21 and 22 with a very small angular deviation with respect to in the fundamental mode. In this way, the losses due to the mode conversion are reduced compared to the prior art.

En outre, il est toujours possible de changer la forme du réseau pour améliorer la distribution de l'énergie. On peut par exemple donner aux différentes zones du réseau des longueurs différentes, par exemple courte sur les bords du guide et grande au centre.In addition, it is always possible to chan manage the shape of the network to improve energy distribution. We can for example give different areas of the network different lengths, for example short on the edges of the guide and large in the center.

Enfin, l'ouverture angulaire 28 peut être grande (par exemple plusieurs dizaines de degrés), ce qui réduit considérablement les phénomènes de couplage entre guides de sortie. Les inconvénients évoqués plus haut sont donc bien évités.Finally, the angular opening 28 can be large (for example several tens of degrees), which considerably reduces the coupling phenomena between outlet guides. The drawbacks mentioned above are therefore well avoided.

La structure qui vient d'être décrite peut être constituée de matériaux à fort coefficient électro-optique (LiNbO3, InP, GaAs, etc...). On peut alors disposer des électrodes au voisinage de la jonction, pour obtenir une modulation de la lumière. Le phénomène mis en oeuvre est un peu différent de celui des modulateurs classiques. Il peut être expliqué à l'aide de la figure 3, déjà décrite et de la figure 6 qui représente un réseau d'indice 24 inséré entre deux électrodes 30, 31 la première est reliée à la masse et la seconde est portée à une tension V réglable. Le champ électrique appliqué au matériau électro-optique constituant le réseau modifie les indices nI et n2 des différentes zones du réseau donc l'écart An, et par conséquent le paramètre x évoqué plus haut. Si la tension V appliquée est modulée entre deux valeurs V1 et V2, cela équivaut à une variation de x entre deux valeurs x1 et x2. Si l'on se reporte à la figure 3, on voit que l'énergie diffractée dans les ordres +1 et -1 varie alors entre deux valeurs E1 et E2. On obtient ainsi une modulation de la lumière dans les deux guides de sortie 21 et 22 (et naturellement dans le guide 23).The structure which has just been described may consist of materials with a high electro-optical coefficient (LiNbO 3 , InP, GaAs, etc.). One can then have the electrodes in the vicinity of the junction, to obtain a modulation of the light. The phenomenon implemented is a little different from that of conventional modulators. It can be explained with the help of FIG. 3, already described and of FIG. 6 which represents a network of index 24 inserted between two electrodes 30, 31 the first is connected to ground and the second is brought to a voltage V adjustable. The electric field applied to the electro-optical material constituting the network modifies the indices n I and n 2 of the different zones of the network, therefore the difference An, and consequently the parameter x mentioned above. If the applied voltage V is modulated between two values V 1 and V 2 , this is equivalent to a variation of x between two values x 1 and x 2 . If we refer to Figure 3, we see that the energy diffracted in the +1 and -1 orders then varies between two values E 1 and E 2 . A modulation of the light is thus obtained in the two output guides 21 and 22 (and of course in the guide 23).

A titre d'exemple, les quelques valeurs numériques suivantes peuvent être indiquées :

  • - répartition de l'énergie : 34% dans les deux guides extrêmes 21 et 22 et 8% dans le guide central 23, avec x=1,9, ce qui correspond sensiblement au point M de la figure 3,
  • - répartition égale dans les trois guides de sortie (point N) avec x de l'ordre de 1,4 à 1,5,
  • - avec un guide de Ti:LiNb03 de largeur 8 um, θ = 30° à la longueur d'onde de 1,55 µm; le pas p du réseau est de 1,4 µm et la longueur L est égale à 78 µm; le paramètre x vaut 1,9 ;
  • - pour θ = 45°, λ = 1,55 µm, p = 1,0 µm et L = 60 µm, le paramètre x est égal à 1,45.
As an example, the following few numerical values can be indicated:
  • energy distribution: 34% in the two extreme guides 21 and 22 and 8% in the central guide 23, with x = 1.9, which corresponds substantially to point M in FIG. 3,
  • - equal distribution in the three outlet guides (point N) with x of the order of 1.4 to 1.5,
  • - with a Ti guide: LiNb0 3 with a width of 8 μm, θ = 30 ° at the wavelength of 1.55 μm; the network pitch p is 1.4 µm and the length L is equal to 78 µm; the parameter x is 1.9;
  • - for θ = 45 °, λ = 1.55 µm, p = 1.0 µm and L = 60 µm, the parameter x is equal to 1.45.

En ce qui concerne la fabrication du dispositif qui vient d'être décrit, on peut utiliser des techniques connues telles que celles qui sont décrites dans l'article de PUN E.Y.B. et YI-YAN Alfredo intitulé "Fabrication of Periodic Waveguides by Ion Exchan- ge" publié dans la revue "Applied Physics Letters", 38, 9, p. 873-874 (Mai 1981) ainsi que dans l'article de PUN E.Y.B., WONG K.K., ANDONOVIC I., LAYBOURN P.J.R. et DE LA RUE R.M. intitulé "Efficient Wave Guide Bragg-Deflection Grating on LiNbO3" publié dans la revue Electronics Letters 18, 17, p. 740-742 (Août 1982).With regard to the manufacture of the device which has just been described, known techniques can be used such as those which are described in the article by PUN EYB and YI-YAN Alfredo entitled "Fabrication of Periodic Waveguides by Ion Exchanging "published in the journal" Applied Physics Letters ", 38, 9, p. 873-874 (May 1981) and in the article by PUN EYB, WONG KK, ANDONOVIC I., LAYBOURN PJR and DE LA RUE RM entitled "Efficient W ave Guide Bragg-Deflection Grating on LiNbO 3 " published in the journal Electronics Letters 18, 17, p. 740-742 (August 1982).

Les figures 7 à 10 montrent quelques étapes de procédés de fabrication possibles.Figures 7 to 10 show some possible manufacturing process steps.

Sur la figure 7, tout d'abord, on dépose sur un substrat 40, une couche 41 de matériau dopant (figure a) puis une couche 42 de photorésine (figure b) laquelle est insolée (figure c) à travers un masque 43 percé d'ouvertures 44. Après développement, il subsiste des bandes 45 de résine séparant des ouvertures 46 (figure d). A travers ces ouvertures une attaque chimique ou ionique de la couche 41 est effectué. Ensuite on retire les bandes de résine 45, ce qui laisse subsister des bandes de dopant 47 sur le substrat 40 (figure e).In FIG. 7, firstly, a layer 41 of doping material (FIG. A) is then deposited on a substrate 40, then a layer 42 of photoresist (FIG. B) which is exposed (FIG. C) through a mask 43 pierced openings 44. After development, there remain strips 45 of resin separating openings 46 (FIG. d). Through these openings a chemical or ionic attack on layer 41 is carried out. Then we remove the strips of resin 45, which leaves sub sister strips of dopant 47 on the substrate 40 (Figure e).

Un autre procédé qui mène au même résultat consiste à effectuer sur le substrat 40 un dépôt d'une couche 51 de photorésine (figure f), à insoler cette couche à travers un masque 52 percé d'ouvertures 53 (figure g). Après développement, il subsiste des bandes 54 de résine (figure h). On effectue ensuite un dépôt d'une couche métallique 55 (figure i) puis, par enlèvement ("lift-off"), on fait disparaître les parties de cette couche métallique qui recouvrent les bandes de résine. On obtient alors le motif de la figure e.Another method which leads to the same result consists in depositing on the substrate 40 a layer 51 of photoresist (FIG. F), to expose this layer through a mask 52 pierced with openings 53 (FIG. G). After development, there remain strips 54 of resin (FIG. H). Next, a metal layer 55 is deposited (FIG. I) then, by removal ("lift-off"), the parts of this metal layer which cover the strips of resin are made to disappear. The pattern in Figure e is then obtained.

Ayant obtenu ce motif soit par une voie, soit par l'autre, le procédé se poursuit comme indiqué sur la figure 8. Les bandes 47 sont alors constituées d'un matériau dopant, lequel diffuse dans le substrat 40. Cette diffusion est essentiellement transversale mais comporte également une partie latérale. Cette diffusion est schématisée par les flèches de la figure a. Après diffusion on obtient une couche de guidage 50 de dopage continu tel qu'illustré sur la figure b.Having obtained this pattern either by one way or by the other, the process continues as shown in FIG. 8. The strips 47 then consist of a doping material, which diffuses into the substrate 40. This diffusion is essentially transverse but also has a side part. This distribution is shown schematically by the arrows in Figure a. After diffusion, a guide layer 50 of continuous doping is obtained as illustrated in FIG. B.

Au lieu d'utiliser la diffusion d'un dopant, on peut avoir recours à un procédé d'échange ionique, comme indiqué sur la figure 9. Les zones 47 sont alors constituées par un masque qui recouvre le substrat. Mise au contact avec une solution ionique 54, cette structure est le siège d'un échange ionique. Par exemple des ions Na+(56) provenant du substrat de verre s'échangent avec des ions Ag++ (58) provenant de la solution. Cet échange s'effectue préférentiellement selon une direction transverse, mais également selon une direction latérale (flèches de la partie a). Dès que l'échange ionique est terminé, le masque 47 est retiré. La couche de guidage 60 obtenuefinalement est encore con- time et est représenteesur la partie b.EDe est analogue à celle de la figure 8b, si ce n'est que l'effet obtenu est maintenant maximum en regard des ouvertures du masque alors que, dans le cas précédent, la diffusion y était minimum. Dans les deux cas, la couche de guidage (50 ou 60), sur son substrat 40, voit son indice varier périodiquement.Instead of using the diffusion of a dopant, an ion exchange process can be used, as indicated in FIG. 9. The zones 47 are then formed by a mask which covers the substrate. When brought into contact with an ionic solution 54, this structure is the site of an ion exchange. For example Na + ions (56) from the glass substrate are exchanged with Ag ++ ions (58) from the solution. This exchange is preferably carried out in a transverse direction, but also in a lateral direction (arrows in part a). As soon as the ion exchange is finished, the mask 47 is removed. The guide layer 60 finally obtained is still time and is represented on part b. EDe is similar to that of FIG. 8b, except that the effect obtained is now maximum with regard to the openings of the mask whereas, in the previous case, the diffusion was minimum . In both cases, the guide layer (50 or 60), on its substrate 40, sees its index vary periodically.

La figure 10 illustre un dernier procédé de fabrication. Sur un substrat 40 revêtu d'une couche de guidage 64 (figure a) on dépose une couche 66 de photorésine (figure b). Celle-ci est insolée par deux rayonnements cohérents 67 et 68 qui interfèrent sur la photorésine (figure c). Les franges d'interférence ainsi obtenues permettent, après développement, d'obtenir une couche de photorésine 70 d'épaisseur périodique (figure d) . Par usinage ionique, à travers cette couche (figure e), on obtient une couche de guidage ondulée 72 surmontant le substrat 40.Figure 10 illustrates a final manufacturing process. On a substrate 40 coated with a guide layer 64 (FIG. A) a layer 66 of photoresist is deposited (FIG. B). This is exposed by two coherent rays 67 and 68 which interfere with the photoresist (figure c). The interference fringes thus obtained make it possible, after development, to obtain a layer of photoresist 70 of periodic thickness (FIG. D). By ion machining, through this layer (FIG. E), an undulating guide layer 72 is obtained overlying the substrate 40.

Claims (5)

1. Structure de guidage optique comprenant un guide d'entrée monomode (20) ayant une certaine direction (De), deux guides de sortie monomode (21, 22) ayant des directions (Dsl, Ds2) inclinées de manière symétrique par rapport à la direction (De) du guide d'entrée et une zone évasée de jonction (25) entre le guide d'entrée et les guides de sortie, caractérisée en ce qu'elle comprend en outre un réseau de diffraction (24) disposé entre le guide d'entrée et la jonction, ce réseau ayant un pas qui définit seulement deux directions de diffraction d'ordres différents de zéro, respectivement +1 et -1, ce pas étant choisi pour que ces deux directions de diffraction coïncident avec les directions des deux premiers guides de sortie.1. Optical guide structure comprising a single-mode input guide (20) having a certain direction (De), two single-mode output guides (21, 22) having directions (Ds l , Ds 2 ) inclined symmetrically with respect to to the direction (De) of the entry guide and a flared junction zone (25) between the entry guide and the exit guides, characterized in that it further comprises a diffraction grating (24) arranged between the entry guide and the junction, this grating having a pitch which defines only two diffraction directions of orders different from zero, +1 and -1 respectively, this pitch being chosen so that these two diffraction directions coincide with the directions of the first two exit guides. 2. Structure selon la revendication 1, caractérisée en ce qu'elle comprend un troisième guide de sortie monomode (23) situé entre les deux premiers et ayant même direction que celle du guide d'entrée.2. Structure according to claim 1, characterized in that it comprises a third single-mode output guide (23) located between the first two and having the same direction as that of the input guide. 3. Structure selon la revendication 1, caractérisée en ce que le réseau est encadré par deux électrodes (30, 31) portées à des potentiels différents.3. Structure according to claim 1, characterized in that the network is surrounded by two electrodes (30, 31) brought to different potentials. 4. Structure selon la revendication 1, caractérisée en ce que le réseau (24) est un réseau d'indice.4. Structure according to claim 1, characterized in that the network (24) is an index network. 5. Structure selon la revendication 1, caractérisée en ce que le réseau (24) est obtenu par ondulation de l'épaisseur de la couche de guidage.5. Structure according to claim 1, characterized in that the network (24) is obtained by undulating the thickness of the guide layer.
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US4747654A (en) 1988-05-31
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FR2546309A1 (en) 1984-11-23
EP0126686B1 (en) 1988-08-17
FR2546309B1 (en) 1986-07-04

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