EP0056671B1 - Dispositif de détection photoélectrique - Google Patents

Dispositif de détection photoélectrique Download PDF

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Publication number
EP0056671B1
EP0056671B1 EP82200039A EP82200039A EP0056671B1 EP 0056671 B1 EP0056671 B1 EP 0056671B1 EP 82200039 A EP82200039 A EP 82200039A EP 82200039 A EP82200039 A EP 82200039A EP 0056671 B1 EP0056671 B1 EP 0056671B1
Authority
EP
European Patent Office
Prior art keywords
layer
substrate
thickness
intermediate layer
photoemissive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82200039A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0056671A1 (fr
Inventor
Pierre Dolizy
Françoise Grolière
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Laboratoires dElectronique et de Physique Appliquee
Publication of EP0056671A1 publication Critical patent/EP0056671A1/fr
Application granted granted Critical
Publication of EP0056671B1 publication Critical patent/EP0056671B1/fr
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode

Definitions

  • the present invention relates to a photoelectric detection device for radiation of one length in a range, which device comprises in a vacuum envelope a photoemissive layer supported by a substrate which is transparent to incident radiation and further, for the optical adaptation, an intermediate layer transparent to said radiation, disposed between the photoemissive layer and the substrate, the refractive index of the material constituting the intermediate layer being between that of the substrate and that of the material of the photoemissive layer.
  • Such devices can be, for example, photoelectric cells, image intensifier tubes, image tubes integrated in television recording systems or even photomultipliers.
  • a photoelectric detection device comprises a photoemissive layer deposited directly on a substrate
  • the photoelectric detection efficiency of the device is considerably reduced. It is known to improve this efficiency by attenuating the reflection phenomena which occur at the substrate-photoemissive layer interface by means of one or more intermediate layers transparent to incident radiation placed between substrate and photoemissive layer.
  • Such a device comprising only a single intermediate layer, as according to the invention, is the subject, for example, of United States patent No. 3,254,253.
  • the intermediate layer introduced is chosen for its low absorption.
  • its optical constants and its thickness are such that, taking into account the optical constants of the substrate and of the photoemissive layer, the lights reflected respectively at the substrate-intermediate layer interface and at the intermediate layer-photoemissive layer interface are substantially of the same amplitude and opposite phase, so that they tend to cancel each other out by interference.
  • Such a device considerably attenuates the losses due to reflection phenomena but does not necessarily represent the device which, constructed with layers of the same composition, would have the optimal photoemission efficiency.
  • the object of the invention is to propose a photoelectric detection device comprising a photoemissive layer supported by a substrate transparent to incident radiation with an intermediate layer also transparent, between substrate and photoemissive layer, the photoemission efficiency of said device being optimal taking into account the nature of the constituent materials of the substrate and of the photoemissive and intermediate layers respectively.
  • the preamble is characterized in that the thickness e of the photoemissive layer and l the thickness e i of the intermediate layer are proportioned so that the absorption of the photons of the wavelength domain considered is preferably carried out in the photoemissive layer in the vicinity of the interface of said layer with the vacuum of the device, in a thickness slice, measured from said interface, of the order of magnitude of the depth.
  • the invention is based on theoretical expressions of the photoemission efficiency of a photoelectric detection device with or without an intermediate layer between substrate and photoemissive layer, the absorption of light in the photoemissive layer being supposed to be carried out in the photoemissive layer.
  • the absorption function AI of the photons in the photoemissive layer is a function not only of n, k, x but also of e 1 , ni, k i and the expression giving the yield p ' ⁇ of photoemission of the structure is written:
  • the materials used for the substrate have a refractive index of magnitude of the order of 1.5 to 2 and those, used for the transparent intermediate layer (k 1 ⁇ 0), a refractive index greater than that of the substrate and smaller than that of the photoemissive layer.
  • Figure 1 is a sectional view of an embodiment of a device in which the substrate consists of a disc 11 transparent to radiation on which are deposited the photoemissive layer 12 of thickness e and the intermediate layer 13 of thickness e 1 also transparent to radiation.
  • This stack is supposed to constitute the entrance to a photoelectric tube, the light to be detected being present on the left side of the stack in the direction of arrow 14, the vacuum of the tube 15 being on the right side.
  • the invention proposes to improve the photoemission efficiency compared to a reference photoemissive layer deposited directly on a substrate, this improvement being demonstrated in areas of the light spectrum centered on the lengths.
  • This reference layer for example of the S 20 trialcaline type of chemical formula (Sb Na 2 K, Cs) is deposited on a substrate with a refractive index of the order of 1.5.
  • the photoemission efficiency ⁇ of such a layer is maximum in each of the domains for a certain value of the thickness e of the layer. The order of magnitude of this value appears on line 2 of Table 1 below according to the spectral range.
  • the intermediate layer introduced between the photoemissive layer and the substrate is a layer for example of TiO 2 with a refractive index 2.6.
  • each curve corresponds to a value of e 1 of the intermediate layer, this value being indicated opposite each curve.
  • the photoemission efficiency p' ⁇ of the device is optimal in each of the spectral domains when the pairs of values of e and e 1 are those indicated in lines 4 and 5 of Table I, the efficiency being for its part indicated in line 6.
  • Line 7 indicates the ratio equal to 1.3; 1.25; 1.1; in the blue, green and red spectral domains respectively.
  • the highest photoemissive gain is therefore obtained in blue light with a photocathode thickness comparable to the photoemissive layers of type S 20 of the same composition deposited directly on the substrate.
  • the photoelectric detection device according to the invention is not limited to that corresponding to thicknesses e and e 1 , the pairs of values of which are those indicated in table I.
  • the invention extends to devices for which the sum e + e 1 is equal to the values previously indicated to within 15%.
  • the invention leads to devices which are defined in a similar manner and whose sums e + e 1 are characteristic of the spectral domains considered.
  • a second embodiment of the invention consists in the use of some of the devices obtained according to the first embodiment as a photoelectric detection device in the visible and near infrared spectrum with obtaining uniformity of sensitivity in said spectrum as good. as possible.
  • the invention extends to all devices comprising on the substrate a photoemissive layer and a transparent intermediate layer (K 1 ⁇ 0) whose refractive index of the material is between that of the substrate and that of the photoemissive material.
  • the photoemissive layer is bialcalan of chemical formula Sb Ax
  • a and B are alkaline elements and x, y coefficients, if it is a question of increasing the sensitivities in blue and green or of Sb Ax type if it is a question of increasing the sensitivity only in blue or of Ag 0 Cs type for the increase of the sensitivity in all the visible and near infrared spectrum light.
  • the TiO 2 material of the intermediate layer is for example replaced by Ta 2 O 5 or else In 2 O 3 or Sn 0 2 (except in the presence of sodium) or SiO, Mn O, Al 2 O 3 Si 3 N 4 , Mg O or a lanthanum glass prepared in a thin layer.
  • the thicknesses e and e 1 of the device are found to have substantially the same values as those indicated in Tables 1 and II, variations of 15% being permitted without substantially deviating optimizing the photoemission efficiency of the device.

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Light Receiving Elements (AREA)
EP82200039A 1981-01-21 1982-01-14 Dispositif de détection photoélectrique Expired EP0056671B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8101039A FR2498321A1 (fr) 1981-01-21 1981-01-21 Structure de detection photoelectrique
FR8101039 1981-01-21

Publications (2)

Publication Number Publication Date
EP0056671A1 EP0056671A1 (fr) 1982-07-28
EP0056671B1 true EP0056671B1 (fr) 1987-08-26

Family

ID=9254354

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82200039A Expired EP0056671B1 (fr) 1981-01-21 1982-01-14 Dispositif de détection photoélectrique

Country Status (5)

Country Link
US (1) US4490605A (ar)
EP (1) EP0056671B1 (ar)
JP (1) JPS57142521A (ar)
DE (1) DE3277100D1 (ar)
FR (1) FR2498321A1 (ar)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011064680A1 (en) 2009-11-27 2011-06-03 Meus S.R.L. Method for the production of bodies in plastic material comprising at least two portions hinged to each other by a single rotation pin

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2515870A1 (fr) * 1981-11-04 1983-05-06 Labo Electronique Physique Photocathode pour entree de tube electronique comportant un dispositif semi-conducteur avec photo-emission par transmission
JPH08280276A (ja) * 1995-04-11 1996-10-29 Taishiyoo:Kk 水田用給水装置
JP4926504B2 (ja) * 2006-03-08 2012-05-09 浜松ホトニクス株式会社 光電面、それを備える電子管及び光電面の製造方法
JP5342769B2 (ja) * 2006-12-28 2013-11-13 浜松ホトニクス株式会社 光電陰極、電子管及び光電子増倍管
US8212475B2 (en) * 2009-04-02 2012-07-03 Hamamatsu Photonics K.K. Photocathode, electron tube, and photomultiplier tube
IT1396605B1 (it) 2009-11-11 2012-12-14 Pirelli Metodo per controllare la formazione di difettosita' in uno strato sigillante di un pneumatico durante un processo di produzione di pneumatici auto-sigillanti per ruote di veicoli e processo per produrre pneumatici auto-sigillanti per ruote di veicoli

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972691A (en) * 1952-08-06 1961-02-21 Leitz Ernst Gmbh Photocathode for photocells, photoelectric quadrupler and the like
GB1005708A (en) * 1960-12-14 1965-09-29 Emi Ltd Improvements relating to photo electrically sensitive devices
FR1345063A (fr) * 1962-10-23 1963-12-06 Thomson Houston Comp Francaise Cathode photoélectrique
DE1564481A1 (de) * 1966-04-22 1969-09-11 Rodenstock Optik G Verbesserung in Fotokathoden von Bildwander- und Bildverstaerkerroehren

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011064680A1 (en) 2009-11-27 2011-06-03 Meus S.R.L. Method for the production of bodies in plastic material comprising at least two portions hinged to each other by a single rotation pin

Also Published As

Publication number Publication date
FR2498321A1 (fr) 1982-07-23
FR2498321B1 (ar) 1984-04-13
DE3277100D1 (en) 1987-10-01
EP0056671A1 (fr) 1982-07-28
JPS57142521A (en) 1982-09-03
US4490605A (en) 1984-12-25
JPH0552444B2 (ar) 1993-08-05

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