EP0039736A4 - Dispositifs conducteur-isolant-semiconducteur et leur procede de fabrication. - Google Patents
Dispositifs conducteur-isolant-semiconducteur et leur procede de fabrication.Info
- Publication number
- EP0039736A4 EP0039736A4 EP19800902383 EP80902383A EP0039736A4 EP 0039736 A4 EP0039736 A4 EP 0039736A4 EP 19800902383 EP19800902383 EP 19800902383 EP 80902383 A EP80902383 A EP 80902383A EP 0039736 A4 EP0039736 A4 EP 0039736A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductor
- making
- methods
- same
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000012212 insulator Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9412179A | 1979-11-14 | 1979-11-14 | |
US94121 | 2002-03-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0039736A1 EP0039736A1 (fr) | 1981-11-18 |
EP0039736A4 true EP0039736A4 (fr) | 1983-04-06 |
Family
ID=22243186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19800902383 Ceased EP0039736A4 (fr) | 1979-11-14 | 1980-11-12 | Dispositifs conducteur-isolant-semiconducteur et leur procede de fabrication. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0039736A4 (fr) |
JP (1) | JPS56501509A (fr) |
WO (1) | WO1981001485A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049520A (en) * | 1990-06-06 | 1991-09-17 | Micron Technology, Inc. | Method of partially eliminating the bird's beak effect without adding any process steps |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2137592A1 (fr) * | 1971-05-08 | 1972-12-29 | Matsushita Electric Ind Co Ltd | |
FR2321194A1 (fr) * | 1975-08-14 | 1977-03-11 | Nippon Telegraph & Telephone | Transistor a effet de champ a declencheur isole |
US4033026A (en) * | 1975-12-16 | 1977-07-05 | Intel Corporation | High density/high speed MOS process and device |
DE2911726A1 (de) * | 1978-03-27 | 1979-10-11 | Ncr Co | Halbleitervorrichtung und verfahren zu deren herstellung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1575741A (en) * | 1977-01-17 | 1980-09-24 | Philips Electronic Associated | Integrated circuits |
US4212683A (en) * | 1978-03-27 | 1980-07-15 | Ncr Corporation | Method for making narrow channel FET |
US4229755A (en) * | 1978-08-15 | 1980-10-21 | Rockwell International Corporation | Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements |
-
1980
- 1980-11-12 EP EP19800902383 patent/EP0039736A4/fr not_active Ceased
- 1980-11-12 JP JP50015780A patent/JPS56501509A/ja active Pending
- 1980-11-12 WO PCT/US1980/001523 patent/WO1981001485A1/fr not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2137592A1 (fr) * | 1971-05-08 | 1972-12-29 | Matsushita Electric Ind Co Ltd | |
FR2321194A1 (fr) * | 1975-08-14 | 1977-03-11 | Nippon Telegraph & Telephone | Transistor a effet de champ a declencheur isole |
US4033026A (en) * | 1975-12-16 | 1977-07-05 | Intel Corporation | High density/high speed MOS process and device |
DE2911726A1 (de) * | 1978-03-27 | 1979-10-11 | Ncr Co | Halbleitervorrichtung und verfahren zu deren herstellung |
Non-Patent Citations (1)
Title |
---|
See also references of WO8101485A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO1981001485A1 (fr) | 1981-05-28 |
EP0039736A1 (fr) | 1981-11-18 |
JPS56501509A (fr) | 1981-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Designated state(s): DE GB NL |
|
17P | Request for examination filed |
Effective date: 19811017 |
|
DET | De: translation of patent claims | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 19850204 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: BERGSTEDT, LOWELL CARLES Inventor name: DALTON, PHILIP A., JR. |