EP0000661A1 - Making silicon carbide and silicon carbide so made - Google Patents
Making silicon carbide and silicon carbide so made Download PDFInfo
- Publication number
- EP0000661A1 EP0000661A1 EP78300197A EP78300197A EP0000661A1 EP 0000661 A1 EP0000661 A1 EP 0000661A1 EP 78300197 A EP78300197 A EP 78300197A EP 78300197 A EP78300197 A EP 78300197A EP 0000661 A1 EP0000661 A1 EP 0000661A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon carbide
- carbonaceous material
- making
- making silicon
- atmospheres
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/97—Preparation from SiO or SiO2
Definitions
- This invention is about making silicon carbide.
- silicon carbide is made by heating a powdered mixture of high-grade silica sand and high-grade carbon such as anthracite or petroleum coke. Temperatures of 2000 - 2500 C have to be sustained for a day or more, and the yield is far short of 100%. We tentatively believe that gaseous silicon species, on contacting a carbon particle, form silicon carbide which thus soon envelopes the particle. Further conversion of that particle must then depend on solid-state diffusion through its silicon-carbide envelope, hence the slow reaction and high temperatures required.
- high-grade silica sand and high-grade carbon such as anthracite or petroleum coke.
- the invention is making silicon carbide by heating a mixture of silica with a carbonaceous material at from 1350°C to 1550 0 C under a partial pressure of carbon monoxide, measured in atmospheres, not exceeding ten raised to the power (8.6 - 15600/T) where T is the temperature in degrees Kelvin, the carbonaceous material being such that a specimen thereof loses (by oxidation) at least 40mg/cm 2 /sec of carbon in excess carbon dioxide at 1 atmosphere pressure at 1450 C.
- the silicon carbide so made is in the form of fine particles of ⁇ -phase, which has a cubic crystal structure.
- a preferred temperature range having regard to such factors as today's technical capabilities, relative costs and interest rates, is from 1400°C to 1500°C, and a most preferred range is from 1420°C to 1480°C, with an optimum at around 1450°C, where complete reaction may typically take some 40 minutes (compared with 10 minutes at. 1500°C, and a few hours for an incomplete reaction at 1350 C).
- the maximum partial pressure of carbon monoxide which can be used according to the invention is as follows:
- the carbonaceous material may for example be coal (including for example lignite), rice husks (which have a negative cost at present, inasmuch as contractors are paid to dump them), and coconut charcoal.
- the carbonaceous material must not be any of the following (for example): petroleum coke without additions, high-grade anthracite, and spectroscopically pure graphite without additions; the reactivity of these is too low.
- Electrode graphite is a borderline material, which it is on the whole preferred to eschew.
- the carbonaceous material must have a reactivity of at least 40mg/cm /sec on the basis explained above, and the reactivities of coconut charcoal and spectroscopically pure graphite are 70 and 3mg/cm 2 /sec respectively on the same basis.
- the silicon carbide made according to the invention may be exploited, for instance, as a raw material in the refractories and abrasives industries.
- the crucible charge then contained cubic ⁇ -silicon carbide of.good purity in fine powder form, and contained no silica (cristobalite) according to X-ray diffraction investigations; in other words, all the silicon had been converted.
- the furnace was evacuated and then heated to 1450°C and its bed was fluidised with excess pure carbon dioxide at 1 atmosphere.
- the Buffalo Nuts began to oxidise according to the reaction C + CO 2 ⁇ 2CO, and after a set time the heating and gas were stopped.
- the weight loss of the Buffalo Nuts was found to be 80mg/cm 2 /sec.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
β-Silicon carbide and a process for making it by heating together silica and a carbonaceous material at 1350°C to 1550°C.
By 1350°C the partial pressure of carbon monoxide must not exceed 0,11 atmospheres and by 1550°C it must be lower than 1,15 atmospheres. The carbonaceous material must be of high reactivity such as coal, rice husks, coconut charcoal and not pure graphite.
Description
- This invention is about making silicon carbide.
- Conventionally, silicon carbide is made by heating a powdered mixture of high-grade silica sand and high-grade carbon such as anthracite or petroleum coke. Temperatures of 2000 - 2500 C have to be sustained for a day or more, and the yield is far short of 100%. We tentatively believe that gaseous silicon species, on contacting a carbon particle, form silicon carbide which thus soon envelopes the particle. Further conversion of that particle must then depend on solid-state diffusion through its silicon-carbide envelope, hence the slow reaction and high temperatures required.
- The invention is making silicon carbide by heating a mixture of silica with a carbonaceous material at from 1350°C to 15500C under a partial pressure of carbon monoxide, measured in atmospheres, not exceeding ten raised to the power (8.6 - 15600/T) where T is the temperature in degrees Kelvin, the carbonaceous material being such that a specimen thereof loses (by oxidation) at least 40mg/cm2/sec of carbon in excess carbon dioxide at 1 atmosphere pressure at 1450 C.
- The silicon carbide so made is in the form of fine particles of β-phase, which has a cubic crystal structure.
- At too low temperatures, silicon carbide will form rather slowly or with poor yield. At high temperatures, silicon carbide will form with reasonable yield and speed at around atmospheric pressure, but expensive types of furnace are required. As the rate of formation has been observed to increase as the square of the reciprocal ambient pressure, it is often more effective to invest in low-pressure equipment than in higher-temperature furnaces. Therefore, a preferred temperature range, having regard to such factors as today's technical capabilities, relative costs and interest rates, is from 1400°C to 1500°C, and a most preferred range is from 1420°C to 1480°C, with an optimum at around 1450°C, where complete reaction may typically take some 40 minutes (compared with 10 minutes at. 1500°C, and a few hours for an incomplete reaction at 1350 C).
-
- Above these pressures, silicon carbide does not form. Lower pressures are strongly preferred, because of their effect on the rate of formation, with the optimum pressure (just as the temperature) being a compromise between the various technical factors and costs.
- The carbonaceous material may for example be coal (including for example lignite), rice husks (which have a negative cost at present, inasmuch as contractors are paid to dump them), and coconut charcoal. The carbonaceous material must not be any of the following (for example): petroleum coke without additions, high-grade anthracite, and spectroscopically pure graphite without additions; the reactivity of these is too low. Electrode graphite is a borderline material, which it is on the whole preferred to eschew.
- The carbonaceous material must have a reactivity of at least 40mg/cm /sec on the basis explained above, and the reactivities of coconut charcoal and spectroscopically pure graphite are 70 and 3mg/cm2/sec respectively on the same basis.
- In making silicon carbide according to the invention, it is tentatively believed that the carbon particles under the specified conditions are oxidised by carbon dioxide to produce an atmosphere of carbon monoxide around each particle; this atmosphere reacts with any gaseous silicon species before the latter can reach the particle, and in this way the particle does not become enveloped with silicon carbide which could impede further reaction.
- The silicon carbide made according to the invention may be exploited, for instance, as a raw material in the refractories and abrasives industries.
- The invention will now be described by way of example.
- Sand (20g) mined from high-grade silica deposits at Lochaline (in Morvern, Scotland) was hand-mixed with 5g of Yorkshire Nuts, a low-grade lignite, from which slack smaller than 75 mesh B.S. had been removed. The mixture was placed in a 2 cm-diameter graphite crucible with a tight-fitting lid, which is equipped with a 0.5mm hole through which the air pressure in the crucible can be measured and varied as desired.
- Pressure in the crucible was reduced to 60 torr (0.0079 atmospheres) and the crucible heated to l450 C. Evolved gases were pumped away as necessary to keep the pressure at 60 torr, which in a short time was for practical purposes equal to the partial pressure of carbon monoxide, the preponderantly formed gas.
- Heating was discontinued after 1 hour. The crucible charge then contained cubic β-silicon carbide of.good purity in fine powder form, and contained no silica (cristobalite) according to X-ray diffraction investigations; in other words, all the silicon had been converted.
- A further identical sample of 10g Yorkshire Nuts, whose total surface area was determined, was placed in a fluidised bed furnace. (A static bed furnace could have been used as long as the sample was loosely packed and subject to high gas flow-rates ensuring ample gas access to all parts of the sample.) The furnace was evacuated and then heated to 1450°C and its bed was fluidised with excess pure carbon dioxide at 1 atmosphere. The Yorkshire Nuts began to oxidise according to the reaction C + CO2→2CO, and after a set time the heating and gas were stopped. The weight loss of the Yorkshire Nuts was found to be 80mg/cm2/sec.
Claims (5)
1. Making silicon carbide by heating a mixture of silica with a carbonaceous material at from 1350°C to 1550°C under a partial pressure of carbon monoxide, measured in atmospheres, not exceeding ten raised to the power (8.6 - 15600/T) where T is the temperature in degrees Kelvin, the carbonaceous material being such that a specimen thereof loses (by oxidation) at least 40mg/cm /sec of carbon in excess carbon dioxide at 1 atmosphere pressure at 1450°C.
2. Making silicon carbide according to claim 1, at from 1400°C to 1500°C.
3. Making silicon carbide according to claim 2, at from 1420°C to 1480°C.
4. Making silicon carbide according to any preceding claim, wherein the carbonaceous material is coal,, rice husks or coconut charcoal.
5. Silicon carbide made according to any preceding claim.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3158377 | 1977-07-27 | ||
GB3158377 | 1977-07-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
EP0000661A1 true EP0000661A1 (en) | 1979-02-07 |
Family
ID=10325295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP78300197A Withdrawn EP0000661A1 (en) | 1977-07-27 | 1978-07-25 | Making silicon carbide and silicon carbide so made |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0000661A1 (en) |
JP (1) | JPS5425300A (en) |
IT (1) | IT1107474B (en) |
NO (1) | NO782569L (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4283375A (en) * | 1980-01-28 | 1981-08-11 | Great Lakes Carbon Corporation | Production of SiC whiskers |
US5190737A (en) * | 1989-01-11 | 1993-03-02 | The Dow Chemical Company | High yield manufacturing process for silicon carbide |
EP0543751A1 (en) * | 1991-11-21 | 1993-05-26 | PECHINEY RECHERCHE (Groupement d'Intérêt Economique régi par l'Ordonnance du 23 Septembre 1967) Immeuble Balzac | Process for preparing metallic carbides of high specific surface unter flowing inert gas at atmospheric pressure |
US5340417A (en) * | 1989-01-11 | 1994-08-23 | The Dow Chemical Company | Process for preparing silicon carbide by carbothermal reduction |
WO2023060294A1 (en) | 2021-10-15 | 2023-04-20 | Ebner Industrieofenbau Gmbh | Industrial furnace system |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0682286B2 (en) * | 1985-10-28 | 1994-10-19 | 株式会社神戸製鋼所 | Robot controller |
DE4030954C2 (en) * | 1990-09-29 | 1994-08-04 | Danfoss As | Method for controlling the movement of a hydraulically movable implement and path control device for carrying out the method |
WO2011025285A2 (en) * | 2009-08-26 | 2011-03-03 | Lg Innotek Co., Ltd. | System and method for manufacturing silicon carbide pulverulent body |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU138238A1 (en) * | 1960-01-29 | 1960-11-30 | Е.А. Вуколов | The method of producing silicon carbide |
AT260170B (en) * | 1964-10-14 | 1968-02-12 | Du Pont | Process for the production of silicon carbide |
GB1105882A (en) * | 1965-03-10 | 1968-03-13 | Corning Glass Works | Manufacture of silicon carbide fibres |
DE1567593A1 (en) * | 1965-04-27 | 1969-10-09 | Ionics | Production of silicon carbide of small grain size |
DE2052507A1 (en) * | 1970-10-26 | 1972-05-10 | Sued Chemie Ag | Process for the production of activated carbon |
US3754076A (en) * | 1970-10-30 | 1973-08-21 | Univ Utah | Production of silicon carbide from rice hulls |
-
1978
- 1978-07-24 IT IT50447/78A patent/IT1107474B/en active
- 1978-07-24 JP JP9030778A patent/JPS5425300A/en active Pending
- 1978-07-25 EP EP78300197A patent/EP0000661A1/en not_active Withdrawn
- 1978-07-26 NO NO782569A patent/NO782569L/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU138238A1 (en) * | 1960-01-29 | 1960-11-30 | Е.А. Вуколов | The method of producing silicon carbide |
AT260170B (en) * | 1964-10-14 | 1968-02-12 | Du Pont | Process for the production of silicon carbide |
GB1105882A (en) * | 1965-03-10 | 1968-03-13 | Corning Glass Works | Manufacture of silicon carbide fibres |
DE1567593A1 (en) * | 1965-04-27 | 1969-10-09 | Ionics | Production of silicon carbide of small grain size |
DE2052507A1 (en) * | 1970-10-26 | 1972-05-10 | Sued Chemie Ag | Process for the production of activated carbon |
US3754076A (en) * | 1970-10-30 | 1973-08-21 | Univ Utah | Production of silicon carbide from rice hulls |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4283375A (en) * | 1980-01-28 | 1981-08-11 | Great Lakes Carbon Corporation | Production of SiC whiskers |
US5190737A (en) * | 1989-01-11 | 1993-03-02 | The Dow Chemical Company | High yield manufacturing process for silicon carbide |
US5340417A (en) * | 1989-01-11 | 1994-08-23 | The Dow Chemical Company | Process for preparing silicon carbide by carbothermal reduction |
EP0543751A1 (en) * | 1991-11-21 | 1993-05-26 | PECHINEY RECHERCHE (Groupement d'Intérêt Economique régi par l'Ordonnance du 23 Septembre 1967) Immeuble Balzac | Process for preparing metallic carbides of high specific surface unter flowing inert gas at atmospheric pressure |
AU651256B2 (en) * | 1991-11-21 | 1994-07-14 | Centre National De La Recherche Scientifique | Process for the production of metal carbides having a large specific surface under atmospheric pressure inert gas scavenging |
WO2023060294A1 (en) | 2021-10-15 | 2023-04-20 | Ebner Industrieofenbau Gmbh | Industrial furnace system |
Also Published As
Publication number | Publication date |
---|---|
IT7850447A0 (en) | 1978-07-24 |
IT1107474B (en) | 1985-11-25 |
JPS5425300A (en) | 1979-02-26 |
NO782569L (en) | 1979-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4247528A (en) | Method for producing solar-cell-grade silicon | |
Mishra et al. | Production and purification of silicon by calcium reduction of rice-husk white ash | |
US3714334A (en) | Process for epitaxial growth of diamonds | |
US3953556A (en) | Method of preparing uranium nitride or uranium carbonitride bodies | |
EP0000661A1 (en) | Making silicon carbide and silicon carbide so made | |
US4122152A (en) | Process for preparing silicon nitride powder having a high α-phase content | |
CN108193282B (en) | A kind of synthetic method and its application of high-purity silicon carbide raw material | |
US2968530A (en) | Silicon-oxygen-nitrogen composition of matter | |
JP3963649B2 (en) | Method for producing tungsten carbide by vapor-phase carburization | |
US3166380A (en) | Process for the production of submicron silicon carbide | |
JPS5913442B2 (en) | Manufacturing method of high purity type silicon nitride | |
GB1202689A (en) | Bearings | |
US3316062A (en) | Method of purifying titanium diboride | |
GR3004504T3 (en) | ||
Ikawa | Vapor deposition of zirconium carbide-carbon composites by the iodide process | |
HUT52738A (en) | Process for production of betha silicium carbide | |
US2984577A (en) | Process for the production of boron phosphide | |
JPS5930645B2 (en) | Manufacturing method of high purity α-type silicon nitride | |
JPS63199833A (en) | Manufacture of high-purity metallic chromium | |
US2763541A (en) | Vacuum carbon reduction of tungstic oxide | |
US1506537A (en) | Process of purifying graphite | |
US3527578A (en) | Production of uranium-nitrogen compounds | |
GB1296198A (en) | ||
JPS6328873B2 (en) | ||
Kosolapova et al. | Nature of boron carbonitride I. Conditions of preparation of boron carbonitride |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Designated state(s): BE CH DE FR GB NL SE |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn | ||
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: POMFRET, ROGER JOHN Inventor name: GRIEVESON, PAUL Inventor name: TAYLOR, JOHN |