EA201401190A1 - ZOL-GEL METHOD FOR FORMING A FERROELECTRIC OXIDE FILM - Google Patents
ZOL-GEL METHOD FOR FORMING A FERROELECTRIC OXIDE FILMInfo
- Publication number
- EA201401190A1 EA201401190A1 EA201401190A EA201401190A EA201401190A1 EA 201401190 A1 EA201401190 A1 EA 201401190A1 EA 201401190 A EA201401190 A EA 201401190A EA 201401190 A EA201401190 A EA 201401190A EA 201401190 A1 EA201401190 A1 EA 201401190A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- solution
- film
- forming
- temperature
- strontium
- Prior art date
Links
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Изобретение относится к технологии полупроводниковой микро- и наноэлектроники, а именно к золь-гель технологии получения сегнетоэлектрических тонких оксидных пленок на интегральных микросхемах, применяемых, в частности, в устройствах энергонезависимой памяти типа FRAM. Технический результат заключается в увеличении остаточной поляризации до Р=8 мкКл/сми расширении диапазона концентраций элементов, при которых формируется необходимая кристаллическая структура сегнетоэлектрической пленки. Готовят исходные растворы хлоридов стронция, висмута, тантала и ниобия, каждый раствор подвергают ультразвуковой обработке в течение 20-40 мин, выдерживают в течение суток при комнатной температуре, смешивают исходные растворы при перемешивании в один стронций-висмут-тантал-ниобиевый пленкообразующий раствор, подогревают раствор до 40-45°С в течение 30-40 мин, добавляют в раствор стабилизатор в количестве 2-3 мас.%, выдерживают пленкообразующий раствор в течение суток при комнатной температуре, наносят раствор на подложку, сушат подложку с нанесенным пленкообразующим раствором при температуре 50-450°С и отжигают пленку в присутствии кислорода при температуре 700-800°С в течение 1-2 ч.The invention relates to the technology of semiconductor micro- and nanoelectronics, in particular, to the sol-gel technology for producing ferroelectric thin oxide films on integrated circuits used, in particular, in FRAM non-volatile memory devices. The technical result consists in increasing the residual polarization to P = 8 μC / cm by expanding the range of concentrations of elements at which the required crystal structure of the ferroelectric film is formed. Prepare initial solutions of strontium, bismuth, tantalum and niobium chlorides, each solution is subjected to ultrasonic treatment for 20-40 minutes, kept for 24 hours at room temperature, the initial solutions are mixed with stirring in one strontium-bismuth-tantalum-niobium film-forming solution, heated the solution is up to 40-45 ° C for 30-40 minutes, the stabilizer is added to the solution in an amount of 2-3 wt.%, the film-forming solution is kept for a day at room temperature, the solution is applied onto the substrate, the substrate is dried with hay film-forming solution at a temperature of 50-450 ° C and annealed the film in the presence of oxygen at a temperature of 700-800 ° C for 1-2 hours
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| BY20140252 | 2014-05-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EA201401190A1 true EA201401190A1 (en) | 2015-11-30 |
| EA026753B1 EA026753B1 (en) | 2017-05-31 |
Family
ID=54704920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EA201401190A EA026753B1 (en) | 2014-05-06 | 2014-11-26 | Sol-gel method of forming ferroelectric oxide film |
Country Status (1)
| Country | Link |
|---|---|
| EA (1) | EA026753B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114716157A (en) * | 2022-05-11 | 2022-07-08 | 南京卡巴卡电子科技有限公司 | Ferroelectric film for high-temperature acceleration sensor and preparation method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5943111A (en) * | 1998-06-09 | 1999-08-24 | Symetrix Corporation | Layered superlattice ferroelectric liquid crystal display |
| US6198225B1 (en) * | 1999-06-07 | 2001-03-06 | Symetrix Corporation | Ferroelectric flat panel displays |
| US6503374B1 (en) * | 2000-08-29 | 2003-01-07 | National Science Council | SBTN ferroelectric thin film and method for producing same |
| US6437380B1 (en) * | 2001-03-28 | 2002-08-20 | Symetrix Corporation | Ferroelectric device with bismuth tantalate capping layer and method of making same |
| RU2470866C1 (en) * | 2011-06-22 | 2012-12-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет радиотехники, электроники и автоматики" | Method of preparing anhydrous film-forming solutions for forming ferroelectric lead zirconate-titanate films with low freezing point |
-
2014
- 2014-11-26 EA EA201401190A patent/EA026753B1/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114716157A (en) * | 2022-05-11 | 2022-07-08 | 南京卡巴卡电子科技有限公司 | Ferroelectric film for high-temperature acceleration sensor and preparation method thereof |
| CN114716157B (en) * | 2022-05-11 | 2023-10-31 | 南京卡巴卡电子科技有限公司 | Ferroelectric film for high-temperature acceleration sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| EA026753B1 (en) | 2017-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): AM AZ BY KZ KG TJ TM |
|
| MM4A | Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s) |
Designated state(s): RU |