EA201300509A1 - METHOD FOR OBTAINING PRECIOUS STONES FROM SILICON CARBIDE - Google Patents

METHOD FOR OBTAINING PRECIOUS STONES FROM SILICON CARBIDE

Info

Publication number
EA201300509A1
EA201300509A1 EA201300509A EA201300509A EA201300509A1 EA 201300509 A1 EA201300509 A1 EA 201300509A1 EA 201300509 A EA201300509 A EA 201300509A EA 201300509 A EA201300509 A EA 201300509A EA 201300509 A1 EA201300509 A1 EA 201300509A1
Authority
EA
Eurasian Patent Office
Prior art keywords
polishing
blanks
silicon carbide
sticking
moissanite
Prior art date
Application number
EA201300509A
Other languages
Russian (ru)
Inventor
Александр Валерьевич Клишин
Юрий Иванович ПЕТРОВ
Виктор Анатольевич ТУЗЛУКОВ
Original Assignee
Общество С Ограниченной Ответственностью "Гранник"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Общество С Ограниченной Ответственностью "Гранник" filed Critical Общество С Ограниченной Ответственностью "Гранник"
Publication of EA201300509A1 publication Critical patent/EA201300509A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C17/00—Gems or the like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Adornments (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Изобретение относится к выращиванию и обработке монокристаллов. Полученный данным способом карбид кремния можно использовать не только для электронной промышленности, ювелирного производства, но и в качестве стекла или корпуса для часов. Способ включает одновременное выращивание множества заготовок кристаллов муассанита в сотовой форме формирующего графита, их разделение на отдельные кристаллы, огранку, шлифовку и полировку. Перед огранкой, шлифовкой и полировкой проводят операцию по наклейке заготовок на оправку, а затем по переклейке заготовок на их обратную сторону. Полировку проводят путем полирования муассанита на керамическом круге, вращающемся со скоростью от 200 до 300 об./мин, с использованием алмазного порошка (спрея) с размером зерна от 0,125 до 0,45 мкм, обеспечивая глубину рисок меньшую, чем длина световой волны видимой части спектра, при этом обрезанные и сколотые края и заготовки с дефектами, непригодные для огранки, размельчают и возвращают на стадию выращивания.The invention relates to the cultivation and processing of single crystals. The silicon carbide obtained by this method can be used not only for the electronics industry, jewelry production, but also as a glass or watch case. The method includes the simultaneous cultivation of a variety of moissanite crystal blanks in the honeycomb form of forming graphite, their separation into separate crystals, faceting, polishing and polishing. Before cutting, grinding and polishing, an operation is carried out on sticking the blanks to the mandrel, and then on sticking the blanks to their reverse side. Polishing is carried out by polishing moissanite on a ceramic circle rotating at a speed of 200 to 300 rpm using diamond powder (spray) with a grain size from 0.125 to 0.45 μm, ensuring the depth of scratches is less than the light wavelength of the visible part the spectrum, with the cut and chopped edges and workpieces with defects that are unsuitable for cutting, crushed and returned to the growing stage.

EA201300509A 2010-10-28 2011-08-18 METHOD FOR OBTAINING PRECIOUS STONES FROM SILICON CARBIDE EA201300509A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2010144123/05A RU2434083C1 (en) 2010-10-28 2010-10-28 Procedure for simultaneous production of several faceted valuable stones of synthetic silicon carbide - moissanite
PCT/RU2011/000627 WO2012057651A1 (en) 2010-10-28 2011-08-18 Method for producing gemstones from silicon carbide

Publications (1)

Publication Number Publication Date
EA201300509A1 true EA201300509A1 (en) 2013-08-30

Family

ID=45316702

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201300509A EA201300509A1 (en) 2010-10-28 2011-08-18 METHOD FOR OBTAINING PRECIOUS STONES FROM SILICON CARBIDE

Country Status (13)

Country Link
US (1) US20120298092A1 (en)
EP (1) EP2634295A1 (en)
JP (1) JP2014506138A (en)
KR (1) KR20140037013A (en)
CN (1) CN103314139A (en)
AU (1) AU2011321040A1 (en)
BR (1) BR112013010205A2 (en)
CA (1) CA2816447A1 (en)
EA (1) EA201300509A1 (en)
IL (1) IL225960A0 (en)
MA (1) MA34679B1 (en)
RU (1) RU2434083C1 (en)
WO (1) WO2012057651A1 (en)

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* Cited by examiner, † Cited by third party
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RU2467099C1 (en) * 2011-12-13 2012-11-20 Виктор Анатольевич Тузлуков Method of faceting soft jeweler's material, for example, pearls with precise finishing at free abrasive
US9919972B2 (en) * 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
RU2547260C1 (en) * 2013-12-27 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Российский государственный педагогический университет им. А.И. Герцена" Composition for cleaning surface of soft and porous semiprecious stones
CN108523329A (en) * 2018-02-07 2018-09-14 上海黛恩妠珠宝有限公司 A kind of moissanite round bur
CN109911899B (en) * 2019-03-07 2023-01-03 江苏超芯星半导体有限公司 Preparation method of colorless morusite

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Also Published As

Publication number Publication date
AU2011321040A1 (en) 2013-06-06
BR112013010205A2 (en) 2019-09-24
IL225960A0 (en) 2013-06-27
KR20140037013A (en) 2014-03-26
MA34679B1 (en) 2013-11-02
WO2012057651A1 (en) 2012-05-03
CN103314139A (en) 2013-09-18
CA2816447A1 (en) 2012-05-03
EP2634295A1 (en) 2013-09-04
RU2434083C1 (en) 2011-11-20
US20120298092A1 (en) 2012-11-29
JP2014506138A (en) 2014-03-13

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