DK94963C - Fremgangsmåde ved zonesmeltning af en stav. - Google Patents

Fremgangsmåde ved zonesmeltning af en stav.

Info

Publication number
DK94963C
DK94963C DK56560AA DK56560A DK94963C DK 94963 C DK94963 C DK 94963C DK 56560A A DK56560A A DK 56560AA DK 56560 A DK56560 A DK 56560A DK 94963 C DK94963 C DK 94963C
Authority
DK
Denmark
Prior art keywords
procedure
rod
zone melting
melting
zone
Prior art date
Application number
DK56560AA
Other languages
Danish (da)
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of DK94963C publication Critical patent/DK94963C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DK56560AA 1959-02-17 1960-02-13 Fremgangsmåde ved zonesmeltning af en stav. DK94963C (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL236245 1959-02-17

Publications (1)

Publication Number Publication Date
DK94963C true DK94963C (da) 1962-12-10

Family

ID=19751581

Family Applications (1)

Application Number Title Priority Date Filing Date
DK56560AA DK94963C (da) 1959-02-17 1960-02-13 Fremgangsmåde ved zonesmeltning af en stav.

Country Status (8)

Country Link
US (1) US3085031A (de)
BE (1) BE587638A (de)
CH (1) CH389780A (de)
DE (1) DE1107199B (de)
DK (1) DK94963C (de)
FR (1) FR1248809A (de)
GB (1) GB932661A (de)
NL (2) NL236245A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1235875B (de) * 1963-11-13 1967-03-09 Siemens Ag Verfahren zur Herstellung von neodymdotierten Calciumfluorid-Einkristallen fuer Laser

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL168491B (de) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
AT194444B (de) * 1953-02-26 1958-01-10 Siemens Ag Verfahren und Einrichtung zur Behandlung einer längserstreckten Halbleiterkristallanordnung
US2789039A (en) * 1953-08-25 1957-04-16 Rca Corp Method and apparatus for zone melting
GB797950A (en) * 1954-06-10 1958-07-09 Rca Corp Semi-conductor alloys
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2902350A (en) * 1954-12-21 1959-09-01 Rca Corp Method for single crystal growth
US2841559A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive materials

Also Published As

Publication number Publication date
CH389780A (de) 1965-03-31
GB932661A (en) 1963-07-31
FR1248809A (fr) 1960-12-23
DE1107199B (de) 1961-05-25
NL98968C (de)
US3085031A (en) 1963-04-09
NL236245A (de)
BE587638A (fr) 1960-08-16

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