DK93587A - Fotonuklear transmutationsdoping af halvledere - Google Patents
Fotonuklear transmutationsdoping af halvledereInfo
- Publication number
- DK93587A DK93587A DK093587A DK93587A DK93587A DK 93587 A DK93587 A DK 93587A DK 093587 A DK093587 A DK 093587A DK 93587 A DK93587 A DK 93587A DK 93587 A DK93587 A DK 93587A
- Authority
- DK
- Denmark
- Prior art keywords
- dopping
- semiconductors
- photonuclear
- transmutation
- photonuclear transmutation
- Prior art date
Links
- 238000009377 nuclear transmutation Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Particle Accelerators (AREA)
- Silicon Compounds (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB868604583A GB8604583D0 (en) | 1986-02-25 | 1986-02-25 | Photonuclear doping of semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK93587D0 DK93587D0 (da) | 1987-02-24 |
| DK93587A true DK93587A (da) | 1987-08-26 |
Family
ID=10593604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK093587A DK93587A (da) | 1986-02-25 | 1987-02-24 | Fotonuklear transmutationsdoping af halvledere |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0238206A1 (da) |
| JP (1) | JPS62204522A (da) |
| KR (1) | KR870008375A (da) |
| CN (1) | CN87100971A (da) |
| DK (1) | DK93587A (da) |
| GB (2) | GB8604583D0 (da) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6563123B1 (en) * | 1998-03-17 | 2003-05-13 | Jacques Pierre Friedrich Sellschop | Method of producing carbon with electrically active sites |
| CN103681261A (zh) * | 2012-09-17 | 2014-03-26 | 中国科学院微电子研究所 | 一种功率器件缓冲层或截流子存储层的制备方法 |
| JP2023157126A (ja) * | 2022-04-14 | 2023-10-26 | 国立研究開発法人理化学研究所 | 不純物ドープ半導体の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2439430C2 (de) * | 1974-08-16 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von homogen dotiertem Halbleitermaterial mit p-Leitfähigkeit |
-
1986
- 1986-02-25 GB GB868604583A patent/GB8604583D0/en active Pending
-
1987
- 1987-02-16 GB GB08703536A patent/GB2187041A/en not_active Withdrawn
- 1987-02-16 EP EP87301321A patent/EP0238206A1/en not_active Withdrawn
- 1987-02-24 DK DK093587A patent/DK93587A/da not_active Application Discontinuation
- 1987-02-24 KR KR870001546A patent/KR870008375A/ko not_active Application Discontinuation
- 1987-02-24 CN CN198787100971A patent/CN87100971A/zh active Pending
- 1987-02-25 JP JP62042465A patent/JPS62204522A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2187041A (en) | 1987-08-26 |
| KR870008375A (ko) | 1987-09-26 |
| DK93587D0 (da) | 1987-02-24 |
| EP0238206A1 (en) | 1987-09-23 |
| CN87100971A (zh) | 1987-09-09 |
| GB8703536D0 (en) | 1987-03-25 |
| GB8604583D0 (en) | 1986-04-03 |
| JPS62204522A (ja) | 1987-09-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ATS | Application withdrawn |