DK3830313T3 - Kompakt hoved og kompakt system til dampefaseudfældning - Google Patents
Kompakt hoved og kompakt system til dampefaseudfældning Download PDFInfo
- Publication number
- DK3830313T3 DK3830313T3 DK19742800.6T DK19742800T DK3830313T3 DK 3830313 T3 DK3830313 T3 DK 3830313T3 DK 19742800 T DK19742800 T DK 19742800T DK 3830313 T3 DK3830313 T3 DK 3830313T3
- Authority
- DK
- Denmark
- Prior art keywords
- compact
- vapor phase
- head
- phase precision
- compact system
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1857072A FR3084275B1 (fr) | 2018-07-30 | 2018-07-30 | Tete et systeme compacts de depot en phase vapeur |
PCT/EP2019/070450 WO2020025593A1 (fr) | 2018-07-30 | 2019-07-30 | Tete et systeme compacts de depot en phase vapeur. |
Publications (1)
Publication Number | Publication Date |
---|---|
DK3830313T3 true DK3830313T3 (da) | 2022-08-01 |
Family
ID=65200934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK19742800.6T DK3830313T3 (da) | 2018-07-30 | 2019-07-30 | Kompakt hoved og kompakt system til dampefaseudfældning |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210140047A1 (da) |
EP (1) | EP3830313B1 (da) |
CN (1) | CN112513326A (da) |
DK (1) | DK3830313T3 (da) |
FR (1) | FR3084275B1 (da) |
WO (1) | WO2020025593A1 (da) |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4389973A (en) | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
JPH0712475U (ja) * | 1993-07-23 | 1995-02-28 | 日新電機株式会社 | 気相成長のための液体原料蒸発装置 |
JPH07142394A (ja) * | 1993-11-12 | 1995-06-02 | Sony Corp | Cvd方法及びcvd装置 |
JP2002367911A (ja) * | 2001-06-07 | 2002-12-20 | Sumitomo Chem Co Ltd | 気相成長半導体製造装置及び方法 |
KR20030038396A (ko) * | 2001-11-01 | 2003-05-16 | 에이에스엠엘 유에스, 인코포레이티드 | 우선적인 화학 기상 증착 장치 및 방법 |
US7156380B2 (en) * | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
US7572686B2 (en) | 2007-09-26 | 2009-08-11 | Eastman Kodak Company | System for thin film deposition utilizing compensating forces |
GB0718839D0 (en) * | 2007-09-26 | 2007-11-07 | Eastman Kodak Co | method of patterning a mesoporous nano particulate layer |
US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
US8470718B2 (en) * | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
JP2011066166A (ja) * | 2009-09-16 | 2011-03-31 | Sumitomo Bakelite Co Ltd | スペーサ形成用フィルム、半導体ウエハー接合体の製造方法、半導体ウエハー接合体および半導体装置 |
KR102017962B1 (ko) * | 2014-09-17 | 2019-09-03 | 도쿄엘렉트론가부시키가이샤 | 샤워 헤드 및 성막 장치 |
JP6193284B2 (ja) * | 2015-03-18 | 2017-09-06 | 株式会社東芝 | 流路構造、吸排気部材、及び処理装置 |
US9879795B2 (en) * | 2016-01-15 | 2018-01-30 | Lam Research Corporation | Additively manufactured gas distribution manifold |
-
2018
- 2018-07-30 FR FR1857072A patent/FR3084275B1/fr active Active
-
2019
- 2019-07-30 US US17/263,256 patent/US20210140047A1/en active Pending
- 2019-07-30 WO PCT/EP2019/070450 patent/WO2020025593A1/fr unknown
- 2019-07-30 EP EP19742800.6A patent/EP3830313B1/fr active Active
- 2019-07-30 CN CN201980050597.1A patent/CN112513326A/zh active Pending
- 2019-07-30 DK DK19742800.6T patent/DK3830313T3/da active
Also Published As
Publication number | Publication date |
---|---|
FR3084275A1 (fr) | 2020-01-31 |
CN112513326A (zh) | 2021-03-16 |
EP3830313B1 (fr) | 2022-05-25 |
WO2020025593A1 (fr) | 2020-02-06 |
FR3084275B1 (fr) | 2020-07-31 |
US20210140047A1 (en) | 2021-05-13 |
EP3830313A1 (fr) | 2021-06-09 |
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