DK256887D0 - HIGH VOLTAGE SEMI-LEADER PROTECTION - Google Patents

HIGH VOLTAGE SEMI-LEADER PROTECTION

Info

Publication number
DK256887D0
DK256887D0 DK256887A DK256887A DK256887D0 DK 256887 D0 DK256887 D0 DK 256887D0 DK 256887 A DK256887 A DK 256887A DK 256887 A DK256887 A DK 256887A DK 256887 D0 DK256887 D0 DK 256887D0
Authority
DK
Denmark
Prior art keywords
contactor
control section
power section
gating
boards
Prior art date
Application number
DK256887A
Other languages
Danish (da)
Other versions
DK169649B1 (en
DK256887A (en
Inventor
Guether Langer
Thomas Wolf
Heinz Rjosk
Michael Mues
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6303019&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK256887(D0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of DK256887D0 publication Critical patent/DK256887D0/en
Publication of DK256887A publication Critical patent/DK256887A/en
Application granted granted Critical
Publication of DK169649B1 publication Critical patent/DK169649B1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
    • H03K17/732—Measures for enabling turn-off

Landscapes

  • Emergency Protection Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Rectifiers (AREA)
  • Power Conversion In General (AREA)
  • Details Of Television Scanning (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
  • Electric Propulsion And Braking For Vehicles (AREA)

Abstract

A semiconductor-based high-voltage contactor is to be created which allows electric direct-current loads to be switched without problem in a wear- and maintenance-free manner with very high switching frequency. The contactor is constructed of a power section and of a control section, the power section of which consists of the series circuit of two GTO thyristors (V3, V4) with RCD protection circuit, which are associated with means for the static voltage division (R1/R3, R2/R4) and a common overvoltage protection (R7) and that this power section, together with the control section, is accommodated with potential isolation on a common heat sink (8) which, at the same time, is used as mounting plate. In a further embodiment, the control section is formed of a board (4) for forming the gating and quenching pulses and two other boards (5 and 6) for transmitting the gating and quenching pulses, the boards (4 to 6) being mounted on the heat sink arranged above one another at several levels. The semiconductor contactor is of simple and compact construction and simple to handle and can be used for replacing mechanical contactors. <IMAGE>
DK256887A 1986-06-14 1987-05-20 High voltage semiconductor contactor DK169649B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19863620074 DE3620074A1 (en) 1986-06-14 1986-06-14 HIGH VOLTAGE SEMICONDUCTOR
DE3620074 1986-06-14

Publications (3)

Publication Number Publication Date
DK256887D0 true DK256887D0 (en) 1987-05-20
DK256887A DK256887A (en) 1987-12-15
DK169649B1 DK169649B1 (en) 1995-01-02

Family

ID=6303019

Family Applications (1)

Application Number Title Priority Date Filing Date
DK256887A DK169649B1 (en) 1986-06-14 1987-05-20 High voltage semiconductor contactor

Country Status (5)

Country Link
EP (1) EP0249725B1 (en)
AT (1) ATE62092T1 (en)
DE (2) DE3620074A1 (en)
DK (1) DK169649B1 (en)
ES (1) ES2021630B3 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4005333A1 (en) * 1990-02-20 1991-08-22 Rehm Schweisstechnik Gmbh Electronic power switching stage - has half bridge with two series of switching elements mounted on heat sink
DE9107692U1 (en) * 1991-06-21 1991-08-14 Siemens Ag, 8000 Muenchen, De
DE10348717B4 (en) * 2003-10-16 2006-09-21 Hauni Primary Gmbh Container for tobacco material
CN103802763B (en) * 2014-02-20 2015-12-30 中国北方车辆研究所 A kind of armored vehicle high direct voltage big current combination power distribution protective device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461319A (en) * 1967-02-24 1969-08-12 Westinghouse Electric Corp Secondary slave control for seriesconnected gate controlled switches
DE3419652A1 (en) * 1984-05-25 1985-11-28 Siemens AG, 1000 Berlin und 8000 München Circuit arrangement for the protection of electronic power supply devices against transient mains disturbances

Also Published As

Publication number Publication date
EP0249725B1 (en) 1991-03-27
ES2021630B3 (en) 1991-11-16
DE3620074C2 (en) 1989-03-23
DK169649B1 (en) 1995-01-02
DE3620074A1 (en) 1987-12-17
DK256887A (en) 1987-12-15
DE3768863D1 (en) 1991-05-02
EP0249725A1 (en) 1987-12-23
ATE62092T1 (en) 1991-04-15

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Legal Events

Date Code Title Description
B1 Patent granted (law 1993)
PBP Patent lapsed