DK209788A - Apparatus for drawing single crystals - Google Patents

Apparatus for drawing single crystals

Info

Publication number
DK209788A
DK209788A DK209788A DK209788A DK209788A DK 209788 A DK209788 A DK 209788A DK 209788 A DK209788 A DK 209788A DK 209788 A DK209788 A DK 209788A DK 209788 A DK209788 A DK 209788A
Authority
DK
Denmark
Prior art keywords
single crystals
drawing single
crystals
Prior art date
Application number
DK209788A
Other languages
Danish (da)
Other versions
DK209788D0 (en
Inventor
Dieter Drechsel
Karl Jericho
Original Assignee
Leybold Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Ag filed Critical Leybold Ag
Publication of DK209788D0 publication Critical patent/DK209788D0/en
Publication of DK209788A publication Critical patent/DK209788A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B15/00—Drawing glass upwardly from the melt
    • C03B15/14—Drawing tubes, cylinders, or rods from the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK209788A 1987-10-03 1988-04-18 Apparatus for drawing single crystals DK209788A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3733487A DE3733487C2 (en) 1987-10-03 1987-10-03 Device for pulling single crystals

Publications (2)

Publication Number Publication Date
DK209788D0 DK209788D0 (en) 1988-04-18
DK209788A true DK209788A (en) 1989-04-04

Family

ID=6337565

Family Applications (1)

Application Number Title Priority Date Filing Date
DK209788A DK209788A (en) 1987-10-03 1988-04-18 Apparatus for drawing single crystals

Country Status (6)

Country Link
EP (1) EP0310739B1 (en)
JP (1) JP2635688B2 (en)
KR (1) KR960009700B1 (en)
DE (2) DE3733487C2 (en)
DK (1) DK209788A (en)
FI (1) FI88313C (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633218B2 (en) * 1987-12-08 1994-05-02 日本鋼管株式会社 Silicon single crystal manufacturing equipment
JP3774920B2 (en) * 1995-12-27 2006-05-17 信越半導体株式会社 Heater mechanism of single crystal pulling device
DE19830785A1 (en) * 1998-07-09 2000-01-13 Wacker Siltronic Halbleitermat Supporting crucibles for supporting crucibles
JP5131170B2 (en) * 2008-12-05 2013-01-30 信越半導体株式会社 Upper heater for single crystal production, single crystal production apparatus and single crystal production method
US8944354B2 (en) 2011-09-30 2015-02-03 Starbucks Corporation Apparatus, systems, and methods for grinding a material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
GB1095587A (en) * 1965-09-24
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
JPS6027683A (en) * 1983-07-21 1985-02-12 Toshiba Corp Resistant heater for single crystal production apparatus
JPS60103097A (en) * 1983-11-08 1985-06-07 Sumitomo Electric Ind Ltd Device for pulling up single crystal
CA1261715A (en) * 1984-07-06 1989-09-26 General Signal Corporation Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
JPS6153187A (en) * 1984-08-24 1986-03-17 Sony Corp Device for growing single crystal
IN161924B (en) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
DE3506754A1 (en) * 1985-02-26 1986-08-28 Leybold-Heraeus GmbH, 5000 Köln Terminal connection in electrically heated vacuum installations

Also Published As

Publication number Publication date
FI88313B (en) 1993-01-15
EP0310739A2 (en) 1989-04-12
JPH0196087A (en) 1989-04-14
FI884510A (en) 1989-04-04
KR890006529A (en) 1989-06-14
DK209788D0 (en) 1988-04-18
DE3733487C2 (en) 1997-08-14
JP2635688B2 (en) 1997-07-30
DE3877486D1 (en) 1993-02-25
FI88313C (en) 1993-04-26
EP0310739B1 (en) 1993-01-13
KR960009700B1 (en) 1996-07-23
FI884510A0 (en) 1988-09-30
EP0310739A3 (en) 1990-06-27
DE3733487A1 (en) 1989-04-13

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Legal Events

Date Code Title Description
AHS Application shelved for other reasons than non-payment