DK1878215T3 - Billedskanderer der anvender multiple chips med forskudte pixels - Google Patents

Billedskanderer der anvender multiple chips med forskudte pixels

Info

Publication number
DK1878215T3
DK1878215T3 DK06751003T DK06751003T DK1878215T3 DK 1878215 T3 DK1878215 T3 DK 1878215T3 DK 06751003 T DK06751003 T DK 06751003T DK 06751003 T DK06751003 T DK 06751003T DK 1878215 T3 DK1878215 T3 DK 1878215T3
Authority
DK
Denmark
Prior art keywords
multiple chips
image scans
offset pixels
pixels
offset
Prior art date
Application number
DK06751003T
Other languages
English (en)
Inventor
Jeffrey J Zarnowski
Ketan V Karia
Michael Joyner
Thomas Poonnen
Original Assignee
Panavision Imaging Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panavision Imaging Llc filed Critical Panavision Imaging Llc
Application granted granted Critical
Publication of DK1878215T3 publication Critical patent/DK1878215T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/0308—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array characterised by the design of the photodetectors, e.g. shape
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
    • H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
    • H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
    • H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
    • H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
    • H04N1/1932—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays using an array of elements displaced from one another in the sub scan direction, e.g. a diagonally arranged array
    • H04N1/1933—Staggered element arrays, e.g. arrays with elements arranged in a zigzag
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
    • H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
    • H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
    • H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
    • H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
    • H04N1/1934—Combination of arrays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DK06751003T 2005-04-21 2006-04-21 Billedskanderer der anvender multiple chips med forskudte pixels DK1878215T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/111,334 US7045758B2 (en) 2001-05-07 2005-04-21 Scanning image employing multiple chips with staggered pixels
PCT/US2006/015138 WO2006116121A2 (en) 2005-04-21 2006-04-21 Scanning imager employing multiple chips with staggered pixels

Publications (1)

Publication Number Publication Date
DK1878215T3 true DK1878215T3 (da) 2009-11-30

Family

ID=37215308

Family Applications (1)

Application Number Title Priority Date Filing Date
DK06751003T DK1878215T3 (da) 2005-04-21 2006-04-21 Billedskanderer der anvender multiple chips med forskudte pixels

Country Status (10)

Country Link
US (3) US7045758B2 (da)
EP (1) EP1878215B1 (da)
JP (1) JP4478730B2 (da)
KR (1) KR101006813B1 (da)
CN (1) CN101204080B (da)
AU (1) AU2006239987B2 (da)
DE (1) DE602006008129D1 (da)
DK (1) DK1878215T3 (da)
TW (1) TWI318842B (da)
WO (1) WO2006116121A2 (da)

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Publication number Priority date Publication date Assignee Title
JP2002101261A (ja) * 2000-09-26 2002-04-05 Rohm Co Ltd 画像読み取り装置
US7554067B2 (en) * 2001-05-07 2009-06-30 Panavision Imaging Llc Scanning imager employing multiple chips with staggered pixels
JP5172162B2 (ja) * 2006-08-25 2013-03-27 株式会社日立ハイテクノロジーズ 欠陥検査装置
US7623560B2 (en) * 2007-09-27 2009-11-24 Ostendo Technologies, Inc. Quantum photonic imagers and methods of fabrication thereof
US7893977B2 (en) * 2007-10-23 2011-02-22 Xerox Corporation Multiplexing and offset correction system for an image sensor array
JP4816653B2 (ja) 2008-02-04 2011-11-16 ソニー株式会社 表示装置及びその駆動方法と電子機器
US8035711B2 (en) * 2008-05-22 2011-10-11 Panavision Imaging, Llc Sub-pixel array optical sensor
US20100149393A1 (en) * 2008-05-22 2010-06-17 Panavision Imaging, Llc Increasing the resolution of color sub-pixel arrays
US8300286B2 (en) * 2009-07-01 2012-10-30 Xerox Corporation Photosensitive chip with shifted rows of photosensors and methods thereof
US20110205384A1 (en) * 2010-02-24 2011-08-25 Panavision Imaging, Llc Variable active image area image sensor
US8692913B2 (en) * 2010-03-16 2014-04-08 Fujifilm Corporation Solid-state electronic image sensing apparatus and method of controlling operation of same
WO2011143507A2 (en) * 2010-05-12 2011-11-17 Li-Cor, Inc. High dynamic range scanning with reduced channel cross-talk
TWI484443B (zh) * 2011-01-03 2015-05-11 Himax Imaging Inc 數位攝像裝置及其影像處理方法
RU2469368C1 (ru) * 2011-05-04 2012-12-10 Федеральное государственное унитарное предприятие ГОСУДАРСТВЕННЫЙ НАУЧНО-ПРОИЗВОДСТВЕННЫЙ РАКЕТНО-КОСМИЧЕСКИЙ ЦЕНТР "ЦСКБ ПРОГРЕСС" (ФГУП "ГНПРКЦ "ЦСКБ-ПРОГРЕСС") Многоканальный интегральный блок оптико-электронного преобразования
US8657200B2 (en) 2011-06-20 2014-02-25 Metrologic Instruments, Inc. Indicia reading terminal with color frame processing
US8748828B2 (en) * 2011-09-21 2014-06-10 Kla-Tencor Corporation Interposer based imaging sensor for high-speed image acquisition and inspection systems
CN103686103B (zh) * 2013-12-31 2018-01-26 上海集成电路研发中心有限公司 具有合并和分裂模式的图像传感器、像素单元
RU2564203C2 (ru) * 2014-01-10 2015-09-27 Акционерное общество "Ракетно-космический центр "Прогресс" (АО "РКЦ Прогресс") Герметичный фокальный узел блока оптико-электронного преобразования
RU2584722C2 (ru) * 2014-05-14 2016-05-20 Открытое акционерное общество "Ракетно-космический центр "Прогресс" (ОАО "РКЦ "Прогресс") Многоканальный блок оптико-электронного преобразования
JP6587380B2 (ja) * 2014-09-12 2019-10-09 キヤノン株式会社 画像処理装置、撮像装置、画像処理方法、プログラム、記憶媒体
JP6549366B2 (ja) * 2014-09-19 2019-07-24 株式会社リコー 光電変換素子、画像読取装置及び画像形成装置
JP6733657B2 (ja) * 2015-03-18 2020-08-05 ソニー株式会社 固体撮像装置および駆動方法、並びに電子機器
US9911774B2 (en) 2015-04-14 2018-03-06 Massachusetts Institute Of Technology Photodiode placement for cross talk suppression
US10218923B2 (en) * 2017-02-17 2019-02-26 Semiconductor Components Industries, Llc Methods and apparatus for pixel binning and readout
JP7299680B2 (ja) * 2018-08-23 2023-06-28 キヤノン株式会社 撮像装置及び撮像システム

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US5665959A (en) * 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array
US6166831A (en) * 1997-12-15 2000-12-26 Analog Devices, Inc. Spatially offset, row interpolated image sensor
US6084229A (en) * 1998-03-16 2000-07-04 Photon Vision Systems, Llc Complimentary metal oxide semiconductor imaging device
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US7057150B2 (en) * 1998-03-16 2006-06-06 Panavision Imaging Llc Solid state imager with reduced number of transistors per pixel
US6512221B2 (en) * 2001-03-13 2003-01-28 Cmos Sensor, Inc. Image sensor chip with an integrated operational amplifier and its application in a CIS module

Also Published As

Publication number Publication date
US20060202107A1 (en) 2006-09-14
AU2006239987B2 (en) 2009-09-10
KR20070121837A (ko) 2007-12-27
TWI318842B (en) 2009-12-21
EP1878215B1 (en) 2009-07-29
TW200704140A (en) 2007-01-16
US7045758B2 (en) 2006-05-16
WO2006116121A2 (en) 2006-11-02
JP4478730B2 (ja) 2010-06-09
CN101204080A (zh) 2008-06-18
US7122778B2 (en) 2006-10-17
KR101006813B1 (ko) 2011-01-12
EP1878215A2 (en) 2008-01-16
AU2006239987A1 (en) 2006-11-02
CN101204080B (zh) 2010-12-29
DE602006008129D1 (de) 2009-09-10
WO2006116121A3 (en) 2007-01-18
US7129461B2 (en) 2006-10-31
US20050185079A1 (en) 2005-08-25
JP2008538688A (ja) 2008-10-30
US20060157644A1 (en) 2006-07-20

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