DK141557B - Apparatus for the manufacture of unilaterally closed tubes of semiconductor material - Google Patents
Apparatus for the manufacture of unilaterally closed tubes of semiconductor material Download PDFInfo
- Publication number
- DK141557B DK141557B DK564772A DK564772A DK141557B DK 141557 B DK141557 B DK 141557B DK 564772 A DK564772 A DK 564772A DK 564772 A DK564772 A DK 564772A DK 141557 B DK141557 B DK 141557B
- Authority
- DK
- Denmark
- Prior art keywords
- support body
- sheath
- semiconductor material
- graphite
- casing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/073—Hollow body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Description
141557141557
Patent nr. 137.550 angår et apparat til fremstilling af ensidigt lukkede rør af halvledermateriale ved udskillelse af halvledermaterialet fra en gasformig for-bindelse på et hult rørformet bærelegeme, som er lukket 5 ved en ende og opvarmes ved direkte strømgennemgang, i hvilket bærelegemes indre der er anbragt en stav af grafit eller et af materialerne glaskul, spektralkul eller pyrografit, hvilken stav er elektrisk ledende forbundet med bærelegemet, og det ejendommelige ifølge hovedpaten-10 tet er, at staven er skruet ind i en i den lukkede ende af bærelegemet tilvejebragt udsparing. Udsparingen kan f.eks. som vist på fig.l og 2 i hovedpatentet være en boring, som gennemtrænger den lukkede ende af bærelegemet, og boringen er lukket ved hjælp af en midterdel af 15 en i tværsnit paddehatteformet indskruet eller indpresset kappe.Patent No. 137,550 relates to an apparatus for producing unilaterally closed tubes of semiconductor material by separating the semiconductor material from a gaseous connection on a hollow tubular support member, which is closed at one end and heated by direct current passage in which the interior of the support body is located. arranged a graphite rod or one of the glass, spectral or pyrographic materials, which rod is electrically conductive to the support body, and the peculiar feature of the main patent is that the rod is screwed into a recess provided at the closed end of the support body. The recess can e.g. As shown in Figs. 1 and 2 of the main patent, a bore penetrates the closed end of the support body and the bore is closed by means of a middle portion of a cross-sectional mushroom-shaped screwed-in or pressed-in sheath.
Opfindelsen angår et apparat ifølge hovedpatentet, hvor udsparingen er udformet på den ovenfor angivne måde, og det ejendommelige er, at kappen på den udvendige side 20 har form som et fra midten udgående skråt tag.The invention relates to an apparatus according to the main patent, in which the recess is formed in the manner indicated above, and the characteristic is that the casing on the outer side 20 has the shape of a centered inclined roof.
Det ligger inden for opfindelsens rammer, at de skrå flader forløber fra midten af kappen til anlægsfladen på bærelegemets udvendige side.It is within the scope of the invention that the inclined surfaces extend from the center of the casing to the abutment surface on the outside of the support body.
Ved et særligt fordelagtigt udførelseseksempel i-25 følge opfindelsen er der foruden de skrå flader udført en afrunding ved det sted, hvor kappekanten og bærelegemets udvendige væg mødes, hvorved sikres en bedre af-trækning af det færdige siliciumrør.In a particularly advantageous embodiment according to the invention, in addition to the oblique surfaces, a rounding is carried out at the point where the cutting edge and the outer wall of the support body meet, thereby ensuring a better pulling of the finished silicon tube.
Kappen i apparatet ifølge opfindelsen har over for 30 den i hovedpatentet som afdækning af grafitrøret forudsete flade grafitkappe den fordel, at der ved den på forhånd tilvejebragte skrå kappeform opnås en ensartet temperaturfordeling over den samlede flade. Derved kan der ved fremstillingen af ensidigt lukkede siliciumrør ved 35 hjælp af sådanne apparater også sikres en ensartet siliciumudskillelse, og de tilvejebragte Siliciumrør har en ensartet vægtykkelse. Den skrå afsliphing ved kanten afThe casing of the apparatus according to the invention has the advantage of providing a uniform temperature distribution over the total surface with respect to the flat graphite casing envisaged in the main patent as covering the graphite tube. Thus, in the manufacture of unilaterally closed silicon tubes by means of such apparatus, a uniform silicon separation can also be ensured and the silicon tubes provided have a uniform wall thickness. The oblique slip hinged at the edge of
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2158257 | 1971-11-24 | ||
DE2158257A DE2158257A1 (en) | 1971-11-24 | 1971-11-24 | ARRANGEMENT FOR THE MANUFACTURING OF SINGLE-SIDED TUBES FROM SEMICONDUCTOR MATERIAL |
Publications (2)
Publication Number | Publication Date |
---|---|
DK141557B true DK141557B (en) | 1980-04-21 |
DK141557C DK141557C (en) | 1980-09-08 |
Family
ID=5826011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK564772A DK141557C (en) | 1971-11-24 | 1972-11-14 | Apparatus for the manufacture of unilaterally closed tubes of semiconductor material |
Country Status (13)
Country | Link |
---|---|
US (1) | US3793984A (en) |
JP (1) | JPS5743526B2 (en) |
AT (1) | AT324434B (en) |
BE (1) | BE787577R (en) |
CH (1) | CH550609A (en) |
DD (1) | DD105727A6 (en) |
DE (1) | DE2158257A1 (en) |
DK (1) | DK141557C (en) |
FR (1) | FR2160903B2 (en) |
GB (1) | GB1370988A (en) |
IT (1) | IT1046828B (en) |
NL (1) | NL7212471A (en) |
SE (1) | SE375555B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478787A (en) * | 1991-12-26 | 1995-12-26 | Uop | Discrete molecular sieve and use |
US5453233A (en) * | 1993-04-05 | 1995-09-26 | Cvd, Inc. | Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique |
CA2298491C (en) | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
WO2000052796A1 (en) * | 1999-03-04 | 2000-09-08 | Nichia Corporation | Nitride semiconductor laser element |
TWI362769B (en) * | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB450959A (en) * | 1934-10-22 | 1936-07-22 | Robert Calvert Knight Young | Electric resistance heaters |
US2271838A (en) * | 1939-11-06 | 1942-02-03 | Dow Chemical Co | Electric furnace resistor element |
US2355343A (en) * | 1941-07-23 | 1944-08-08 | Ind De L Aluminum Sa | Furnace for the electrothermal production of magnesium |
US2858403A (en) * | 1956-04-23 | 1958-10-28 | Carborundum Co | Silicon carbide immersion heating device |
US2955566A (en) * | 1957-04-16 | 1960-10-11 | Chilean Nitrate Sales Corp | Dissociation-deposition unit for the production of chromium |
GB944009A (en) * | 1960-01-04 | 1963-12-11 | Texas Instruments Ltd | Improvements in or relating to the deposition of silicon on a tantalum article |
US3451772A (en) * | 1967-06-14 | 1969-06-24 | Air Reduction | Production of ultrapure titanium nitride refractory articles |
US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
-
1971
- 1971-11-24 DE DE2158257A patent/DE2158257A1/en active Pending
-
1972
- 1972-08-14 BE BE787577A patent/BE787577R/en active
- 1972-09-14 NL NL7212471A patent/NL7212471A/xx unknown
- 1972-10-02 AT AT843372A patent/AT324434B/en not_active IP Right Cessation
- 1972-10-03 CH CH1440472A patent/CH550609A/en unknown
- 1972-10-31 GB GB5003472A patent/GB1370988A/en not_active Expired
- 1972-11-10 JP JP47112844A patent/JPS5743526B2/ja not_active Expired
- 1972-11-13 US US00306011A patent/US3793984A/en not_active Expired - Lifetime
- 1972-11-14 DK DK564772A patent/DK141557C/en active
- 1972-11-17 SE SE7215010A patent/SE375555B/xx unknown
- 1972-11-21 FR FR7241300A patent/FR2160903B2/fr not_active Expired
- 1972-11-21 IT IT31886/72A patent/IT1046828B/en active
- 1972-11-22 DD DD167018A patent/DD105727A6/xx unknown
Also Published As
Publication number | Publication date |
---|---|
JPS5743526B2 (en) | 1982-09-16 |
DD105727A6 (en) | 1974-05-12 |
IT1046828B (en) | 1980-07-31 |
SE375555B (en) | 1975-04-21 |
DK141557C (en) | 1980-09-08 |
CH550609A (en) | 1974-06-28 |
FR2160903B2 (en) | 1976-08-20 |
FR2160903A2 (en) | 1973-07-06 |
US3793984A (en) | 1974-02-26 |
GB1370988A (en) | 1974-10-23 |
AT324434B (en) | 1975-08-25 |
JPS4863976A (en) | 1973-09-05 |
NL7212471A (en) | 1973-05-28 |
BE787577R (en) | 1972-12-01 |
DE2158257A1 (en) | 1973-05-30 |
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