DK139118C - PROCEDURE FOR MANUFACTURE OF A TWO-PHASE CHARGE SHIFT DEVICE - Google Patents

PROCEDURE FOR MANUFACTURE OF A TWO-PHASE CHARGE SHIFT DEVICE

Info

Publication number
DK139118C
DK139118C DK431074A DK431074A DK139118C DK 139118 C DK139118 C DK 139118C DK 431074 A DK431074 A DK 431074A DK 431074 A DK431074 A DK 431074A DK 139118 C DK139118 C DK 139118C
Authority
DK
Denmark
Prior art keywords
procedure
manufacture
shift device
phase charge
charge shift
Prior art date
Application number
DK431074A
Other languages
Danish (da)
Other versions
DK139118B (en
DK431074A (en
Inventor
K Goser
K-U Stein
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732341179 external-priority patent/DE2341179C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK431074A publication Critical patent/DK431074A/da
Publication of DK139118B publication Critical patent/DK139118B/en
Application granted granted Critical
Publication of DK139118C publication Critical patent/DK139118C/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76875Two-Phase CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/025Deposition multi-step
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/106Masks, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/143Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DK431074A 1973-08-14 1974-08-13 PROCEDURE FOR MANUFACTURE OF A TWO-PHASE CHARGE SHIFT DEVICE DK139118C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732341179 DE2341179C3 (en) 1973-08-14 Method of making a two-phase charge transfer device and the use of materials in this method

Publications (3)

Publication Number Publication Date
DK431074A DK431074A (en) 1975-04-14
DK139118B DK139118B (en) 1978-12-18
DK139118C true DK139118C (en) 1979-05-28

Family

ID=5889768

Family Applications (1)

Application Number Title Priority Date Filing Date
DK431074A DK139118C (en) 1973-08-14 1974-08-13 PROCEDURE FOR MANUFACTURE OF A TWO-PHASE CHARGE SHIFT DEVICE

Country Status (14)

Country Link
US (1) US3914857A (en)
JP (1) JPS5046488A (en)
AT (1) AT337781B (en)
BE (1) BE818752A (en)
CA (1) CA1012659A (en)
CH (1) CH575174A5 (en)
DK (1) DK139118C (en)
FR (1) FR2246068B1 (en)
GB (1) GB1464755A (en)
IE (1) IE39611B1 (en)
IT (1) IT1019907B (en)
LU (1) LU70713A1 (en)
NL (1) NL7410685A (en)
SE (1) SE389764B (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167017A (en) * 1976-06-01 1979-09-04 Texas Instruments Incorporated CCD structures with surface potential asymmetry beneath the phase electrodes
US4087832A (en) * 1976-07-02 1978-05-02 International Business Machines Corporation Two-phase charge coupled device structure
US4232439A (en) * 1976-11-30 1980-11-11 Vlsi Technology Research Association Masking technique usable in manufacturing semiconductor devices
JPS52109879A (en) * 1977-01-28 1977-09-14 Agency Of Ind Science & Technol Formating method of matching domain
JPS5911988B2 (en) * 1980-01-23 1984-03-19 株式会社日立製作所 Ion implantation method
US4542577A (en) * 1982-12-30 1985-09-24 International Business Machines Corporation Submicron conductor manufacturing
US4576884A (en) * 1984-06-14 1986-03-18 Microelectronics Center Of North Carolina Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge
JPH0834194B2 (en) * 1989-06-30 1996-03-29 松下電器産業株式会社 Ion implantation method and method of manufacturing semiconductor device using this method
JP2970158B2 (en) * 1991-12-20 1999-11-02 日本電気株式会社 Method for manufacturing solid-state imaging device
KR940010932B1 (en) * 1991-12-23 1994-11-19 금성일렉트론주식회사 Manufacturing method of ccd image sensor
JP2842066B2 (en) * 1992-08-03 1998-12-24 日本電気株式会社 Solid-state imaging device and manufacturing method thereof
US5409848A (en) * 1994-03-31 1995-04-25 Vlsi Technology, Inc. Angled lateral pocket implants on p-type semiconductor devices
EP0693773B1 (en) * 1994-07-14 2005-02-09 STMicroelectronics S.r.l. VDMOS power device and manufacturing process thereof
JP2965061B2 (en) * 1996-04-19 1999-10-18 日本電気株式会社 Charge coupled device and method of manufacturing the same
IT1289524B1 (en) 1996-12-24 1998-10-15 Sgs Thomson Microelectronics MEMORY CELL FOR EEPROM TYPE DEVICES AND RELATED MANUFACTURING PROCESS
IT1289525B1 (en) * 1996-12-24 1998-10-15 Sgs Thomson Microelectronics MEMORY CELL FOR EEPROM TYPE DEVICES AND RELATED MANUFACTURING PROCESS
US5896314A (en) * 1997-03-05 1999-04-20 Macronix International Co., Ltd. Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor
US5943576A (en) 1998-09-01 1999-08-24 National Semiconductor Corporation Angled implant to build MOS transistors in contact holes
US6331873B1 (en) * 1998-12-03 2001-12-18 Massachusetts Institute Of Technology High-precision blooming control structure formation for an image sensor
JP2001308304A (en) * 2000-04-19 2001-11-02 Sony Corp Manufacturing method of solid-state image pickup element
US6828202B1 (en) * 2002-10-01 2004-12-07 T-Ram, Inc. Semiconductor region self-aligned with ion implant shadowing
JP2005093866A (en) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd Manufacturing method of solid-state imaging device
JP7192723B2 (en) * 2019-09-12 2022-12-20 株式会社ダイフク Goods transport equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US3387360A (en) * 1965-04-01 1968-06-11 Sony Corp Method of making a semiconductor device
FR2123592A5 (en) * 1971-01-14 1972-09-15 Commissariat Energie Atomique
US3851379A (en) * 1973-05-16 1974-12-03 Westinghouse Electric Corp Solid state components

Also Published As

Publication number Publication date
BE818752A (en) 1974-12-02
SE389764B (en) 1976-11-15
CA1012659A (en) 1977-06-21
DK139118B (en) 1978-12-18
FR2246068A1 (en) 1975-04-25
DE2341179A1 (en) 1975-03-20
LU70713A1 (en) 1974-12-10
US3914857A (en) 1975-10-28
DE2341179B2 (en) 1975-06-26
ATA631574A (en) 1976-11-15
IE39611B1 (en) 1978-11-22
JPS5046488A (en) 1975-04-25
DK431074A (en) 1975-04-14
IT1019907B (en) 1977-11-30
GB1464755A (en) 1977-02-16
IE39611L (en) 1975-02-14
FR2246068B1 (en) 1978-01-27
SE7410187L (en) 1975-02-17
CH575174A5 (en) 1976-04-30
AT337781B (en) 1977-07-25
NL7410685A (en) 1975-02-18

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