DK138257C - APPLIANCE FOR DOCTING SEMICONDUCTOR MATERIAL FOR DILIGENT-FREE ZONE MELTING - Google Patents

APPLIANCE FOR DOCTING SEMICONDUCTOR MATERIAL FOR DILIGENT-FREE ZONE MELTING

Info

Publication number
DK138257C
DK138257C DK195971A DK195971A DK138257C DK 138257 C DK138257 C DK 138257C DK 195971 A DK195971 A DK 195971A DK 195971 A DK195971 A DK 195971A DK 138257 C DK138257 C DK 138257C
Authority
DK
Denmark
Prior art keywords
docting
diligent
appliance
semiconductor material
free zone
Prior art date
Application number
DK195971A
Other languages
Danish (da)
Other versions
DK138257B (en
Inventor
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK138257B publication Critical patent/DK138257B/en
Application granted granted Critical
Publication of DK138257C publication Critical patent/DK138257C/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • General Induction Heating (AREA)
DK195971A 1970-04-24 1971-04-23 APPLIANCE FOR DOCTING SEMICONDUCTOR MATERIAL FOR DILIGENT-FREE ZONE MELTING DK138257C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702020182 DE2020182C3 (en) 1970-04-24 1970-04-24 Device for doping semiconductor material during crucible-free zone melting

Publications (2)

Publication Number Publication Date
DK138257B DK138257B (en) 1978-08-07
DK138257C true DK138257C (en) 1979-01-22

Family

ID=5769283

Family Applications (1)

Application Number Title Priority Date Filing Date
DK195971A DK138257C (en) 1970-04-24 1971-04-23 APPLIANCE FOR DOCTING SEMICONDUCTOR MATERIAL FOR DILIGENT-FREE ZONE MELTING

Country Status (6)

Country Link
BE (1) BE766213A (en)
DE (1) DE2020182C3 (en)
DK (1) DK138257C (en)
FR (1) FR2090608A5 (en)
GB (1) GB1303944A (en)
NL (1) NL7104547A (en)

Also Published As

Publication number Publication date
DE2020182B2 (en) 1973-09-20
NL7104547A (en) 1971-10-26
DE2020182C3 (en) 1974-05-02
BE766213A (en) 1971-10-25
DE2020182A1 (en) 1971-11-11
FR2090608A5 (en) 1972-01-14
DK138257B (en) 1978-08-07
GB1303944A (en) 1973-01-24

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