DK136701C - Apparat til digelfri zonesmeltning af et stavformet legeme afkrystallinsk materiale,specielt et halvledermateriale - Google Patents

Apparat til digelfri zonesmeltning af et stavformet legeme afkrystallinsk materiale,specielt et halvledermateriale

Info

Publication number
DK136701C
DK136701C DK313273A DK313273A DK136701C DK 136701 C DK136701 C DK 136701C DK 313273 A DK313273 A DK 313273A DK 313273 A DK313273 A DK 313273A DK 136701 C DK136701 C DK 136701C
Authority
DK
Denmark
Prior art keywords
crystallinic
stave
appliance
zone melting
semiconductor material
Prior art date
Application number
DK313273A
Other languages
Danish (da)
English (en)
Other versions
DK136701B (da
Inventor
W Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK136701B publication Critical patent/DK136701B/da
Application granted granted Critical
Publication of DK136701C publication Critical patent/DK136701C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Induction Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
DK313273A 1972-06-07 1973-06-06 Apparat til digelfri zonesmeltning af et stavformet legeme afkrystallinsk materiale,specielt et halvledermateriale DK136701C (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722227750 DE2227750C3 (de) 1972-06-07 1972-06-07 Vorrichtung zum tiegelfreien Zonenschmelzen eines stabförmigen Körpers aus kristallinem Material, insbesondere aus Halbleitermaterial

Publications (2)

Publication Number Publication Date
DK136701B DK136701B (da) 1977-11-14
DK136701C true DK136701C (da) 1978-06-12

Family

ID=5847082

Family Applications (1)

Application Number Title Priority Date Filing Date
DK313273A DK136701C (da) 1972-06-07 1973-06-06 Apparat til digelfri zonesmeltning af et stavformet legeme afkrystallinsk materiale,specielt et halvledermateriale

Country Status (6)

Country Link
JP (1) JPS5523800B2 (enExample)
BE (1) BE800620A (enExample)
DE (1) DE2227750C3 (enExample)
DK (1) DK136701C (enExample)
IT (1) IT989026B (enExample)
NL (1) NL7302802A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4521621B2 (ja) * 1999-05-24 2010-08-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造方法

Also Published As

Publication number Publication date
BE800620A (fr) 1973-10-01
NL7302802A (enExample) 1973-12-11
DE2227750B2 (de) 1979-12-13
DE2227750C3 (de) 1980-08-28
DK136701B (da) 1977-11-14
DE2227750A1 (de) 1973-12-20
JPS4962301A (enExample) 1974-06-17
JPS5523800B2 (enExample) 1980-06-25
IT989026B (it) 1975-05-20

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Legal Events

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