DK1346367T3 - Ferroelectric memory circuit and method of making it - Google Patents

Ferroelectric memory circuit and method of making it

Info

Publication number
DK1346367T3
DK1346367T3 DK01997814T DK01997814T DK1346367T3 DK 1346367 T3 DK1346367 T3 DK 1346367T3 DK 01997814 T DK01997814 T DK 01997814T DK 01997814 T DK01997814 T DK 01997814T DK 1346367 T3 DK1346367 T3 DK 1346367T3
Authority
DK
Denmark
Prior art keywords
making
memory circuit
ferroelectric memory
ferroelectric
circuit
Prior art date
Application number
DK01997814T
Other languages
Danish (da)
Inventor
Nicklas Johansson
Lichun Chen
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Application granted granted Critical
Publication of DK1346367T3 publication Critical patent/DK1346367T3/en

Links

DK01997814T 2000-11-27 2001-11-27 Ferroelectric memory circuit and method of making it DK1346367T3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO200059804 2000-11-27
NO0104734 2001-11-27

Publications (1)

Publication Number Publication Date
DK1346367T3 true DK1346367T3 (en) 2005-07-11

Family

ID=34709405

Family Applications (1)

Application Number Title Priority Date Filing Date
DK01997814T DK1346367T3 (en) 2000-11-27 2001-11-27 Ferroelectric memory circuit and method of making it

Country Status (1)

Country Link
DK (1) DK1346367T3 (en)

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