DK105596A - Process and apparatus for producing single crystals of silicon - Google Patents

Process and apparatus for producing single crystals of silicon Download PDF

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Publication number
DK105596A
DK105596A DK105596A DK105596A DK105596A DK 105596 A DK105596 A DK 105596A DK 105596 A DK105596 A DK 105596A DK 105596 A DK105596 A DK 105596A DK 105596 A DK105596 A DK 105596A
Authority
DK
Denmark
Prior art keywords
silicon
single crystals
producing single
producing
crystals
Prior art date
Application number
DK105596A
Other languages
Danish (da)
Inventor
Erich Tomzig
Wolfgang Hensel
Reinhard Wolf
Original Assignee
Wacker Siltronic Halbleitermat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic Halbleitermat filed Critical Wacker Siltronic Halbleitermat
Publication of DK105596A publication Critical patent/DK105596A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK105596A 1995-10-12 1996-09-26 Process and apparatus for producing single crystals of silicon DK105596A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1995138020 DE19538020A1 (en) 1995-10-12 1995-10-12 Large diameter single crystal silicon rod growth

Publications (1)

Publication Number Publication Date
DK105596A true DK105596A (en) 1997-04-13

Family

ID=7774670

Family Applications (1)

Application Number Title Priority Date Filing Date
DK105596A DK105596A (en) 1995-10-12 1996-09-26 Process and apparatus for producing single crystals of silicon

Country Status (3)

Country Link
JP (1) JPH09142988A (en)
DE (1) DE19538020A1 (en)
DK (1) DK105596A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (en) 2001-08-02 2007-12-13 Siltronic Ag Single-crystal silicon made by crucible-free zone peeling
DE10204178B4 (en) * 2002-02-01 2008-01-03 Siltronic Ag Method and device for producing a monocrystal of semiconductor material
DE10220964B4 (en) * 2002-05-06 2006-11-02 Pv Silicon Forschungs- Und Produktions Ag Arrangement for producing crystal rods of defined cross-section and columnar polycrystalline structure by means of crucible-free continuous crystallization
DE102008038810B4 (en) * 2008-08-13 2012-03-01 Siltronic Ag Method and device for producing a monocrystal of semiconductor material
DE102009051010B4 (en) * 2009-10-28 2012-02-23 Siltronic Ag Device for producing a single crystal of silicon by remelting of granules
DE102009052745A1 (en) * 2009-11-11 2011-05-12 Siltronic Ag Process for producing a single crystal of silicon by remelting granules
DE102010006724B4 (en) * 2010-02-03 2012-05-16 Siltronic Ag A method of producing a single crystal of silicon using molten granules
CN102947025B (en) * 2010-04-13 2016-04-13 施米德硅晶片科技有限责任公司 The manufacture of single-crystal semiconductor material
DE102010021004A1 (en) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Producing monocrystalline semiconductor material useful e.g. in photovoltaics, comprises providing semiconductor material starting material, transferring it into heating zone and sinking melt into heating zone or lifting heating zone
DE102011007149A1 (en) * 2011-04-11 2012-10-11 Streicher Maschinenbau GmbH & Co. KG Method and device for producing material with mono- or multicrystalline structure
DE102012215677B3 (en) * 2012-09-04 2013-10-10 Siltronic Ag Method of producing a single crystal of silicon
CA2892002A1 (en) * 2012-12-11 2014-06-19 Hemlock Semiconductor Corporation Methods of forming and analyzing doped silicon
DE102014207149A1 (en) 2014-04-14 2015-10-29 Siltronic Ag Apparatus and method for producing a single crystal of silicon
DE102015215858B4 (en) * 2015-08-20 2019-01-24 Siltronic Ag Process for heat treatment of granules of silicon, granules of silicon and process for producing a single crystal of silicon
CN105332062A (en) * 2015-10-13 2016-02-17 江苏华盛天龙光电设备股份有限公司 Material discharge system for single crystal furnace
JP6634577B2 (en) * 2017-01-05 2020-01-22 蒲池　豊 Manufacturing method of silicon crystal
CN110195254B (en) * 2019-07-12 2022-08-12 中国电子科技集团公司第二十六研究所 Coil movable temperature field structure suitable for Czochralski method and single crystal growth method
JP7259722B2 (en) * 2019-12-04 2023-04-18 株式会社Sumco Single crystal manufacturing apparatus and single crystal manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4106589C2 (en) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Continuous recharge with liquid silicon during crucible pulling according to Czochralski

Also Published As

Publication number Publication date
DE19538020A1 (en) 1997-04-17
JPH09142988A (en) 1997-06-03

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Legal Events

Date Code Title Description
AHB Application shelved due to non-payment